• Title/Summary/Keyword: Wafer cutting

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PC 기반의 다이싱 공정 자동화 시스템 개발

  • 김형태;양해정;송창섭
    • Journal of the Korean Society for Precision Engineering
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    • v.17 no.3
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    • pp.47-57
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    • 2000
  • In this study, PC-based dicing machine and driving software were constructed for the purpose of automation of wafer cutting process. To automate the machine, hard automation including vision, loading, and software were considered in the development. Auto loading device and vision system were adopted for the increase of productivity, GUI software programmed for the expedient operation. The dicing machine is operated by the control algorithm and some parameters. It is verified that this kind of PC based automation has a great potential compared with the conventional dicing machine when applied to manufacturing some kinds of wafers as a test purpose.

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The New Generation Laser Dicing Technology for Ultra Thin Si wafer

  • Kumagai, Masayoshi;Uchiyama, N.;Atsumi, K.;Fukumitsu, K.;Ohmura, E.;Morita, H.
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2006.10a
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    • pp.125-134
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    • 2006
  • Process & mechanism $\blacklozenge$ The process consists from two steps which are laser processing step and separation steop. $\blacklozenge$ The wavelength of laser beam is transmissible wavelength for the wafer. However, inside of Si wafer is processed due to temperature dependence of optical absorption coefficient Advantage & Application $\blacklozenge$ Advantages are high speed dicing, no debris contaminants, completely dry process, etc. $\blacklozenge$ The cutting edges were fine, The lifetime and endurances did not degrade the device characteristics $\blacklozenge$ A separation of a wafer with DAF was introduced as an application for SiP

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Ultrafast Laser Micro-machining Technology (극초단 펄스 레이저 응용 미세가공기술)

  • Lee, Jae-Hoon;Sohn, Hyon-Kee
    • Journal of the Korean Society for Precision Engineering
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    • v.27 no.2
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    • pp.7-12
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    • 2010
  • Due to the extremely short interaction time (< $10\times10^{-12}$sec) between laser pulse and material, which enables the minimization of heat affection, ultrafast laser micro-machining has rapidly widened its applications. In this paper, the characteristics of ultrafast laser micro-machining have been reviewed and experimentally demonstrated in laser drilling of silicon wafer and in laser cutting of rigid PCB.

A Study on Cutting Force during Multi Wire Sawing of Silicon Wafers for Solar Cells (태양전지용 실리콘 웨이퍼의 멀티 와이어 쏘잉 시 절삭저항력에 관한 연구)

  • Hwang, In-Hwan;Park, Sang-Hyun;An, Kuk-Jin;Kwun, Geon-Dae;Lee, Chan-Jong
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.15 no.3
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    • pp.66-71
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    • 2016
  • Reducing the wafer breakage rate and sawing thinner wafers will decrease the cost of solar cells. This study was carried out in order to identify ways to achieve this goal. In this study, the cutting force characteristics using an ingot tilting-type diamond multi wire-sawing machine were analyzed. The cutting force was analyzed while varying the tilting angles and wire speed. The obtained data were analyzed by classifying the tangential cutting force and the normal cutting force. In this cutting force experiment, the difference between the forces was confirmed; it was found that it rises with increasing the tilting angles and decreases when the wire speed elevates. The resulting value can be utilized as basic data for the determination of an ideal cutting recipe.

Study on low-k wafer engraving processes by using UV pico-second laser (Low-k 웨이퍼 레이저 인그레이빙 특성에 관한 연구)

  • Nam, Gi-Jung;Moon, Seong-Wook;Hong, Yoon-Seok;Bae, Han-Seong;Kwak, No-Heung
    • Proceedings of the Korean Society of Laser Processing Conference
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    • 2006.11a
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    • pp.128-132
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    • 2006
  • Low-k wafer engraving process has been investigated by using UV pico-second laser with high repetition rate. Wavelength and repetition rate of laser used in this study are 355nm and 80MHz, respectively. Main parameters of low-k wafer engraving processes are laser power, work speed, assist gas flow rate, and protective coating to eliminate debris. Results show that engraving qualities of low-k layer by using UV pico-second pulse width and high repetition rate had better kerf edge and higher work speed, compared to one by conventional laser with nano-second pulse width and low repetition rate in the range of kHz. Assist gas and protective coating to eliminate debris gave effects on the quality of engraving edge. Total engraving width and depth are obtained less than $20{\mu}m$ and $10{\mu}m$ at more than 500mm/sec work speed, respectively. We believe that engraving method by using UV pico-second laser with high repetition rate is useful one to give high work speed of laser material process.

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Analysis of die strength for laser dicing (레이저 다이싱에 의한 die strength 분석)

  • Lee, Young-Hyun;Choi, Kyung-Jin;Bae, Sung-Chang
    • Proceedings of the KIEE Conference
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    • 2006.04a
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    • pp.327-329
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    • 2006
  • In this paper, the cutting qualities by laser dicing and fracture strength of a silicon die is investigated. Laser micromachining is the non-contact process using thermal ablation and evaporation mechanisms. By these mechanisms, debris is generated and stick on the surface of wafer, which is the problem to apply laser dicing to semiconductor manufacture process. Unlike mechanical sawing using diamond blade, chipping on the surface and crack on the back side of wafer isn't made by laser dicing. Die strength by laser dicing is measured via the three-point bend test and is compared with the die strength by mechanical sawing. As a results, die strength by laser dicing shows a decrease of 50% in compared with die strength by mechanical sawing.

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A study on the automatic wafer alignment in semiconductor dicing (반도체 절단 공정의 웨이퍼 자동 정렬에 관한 연구)

  • 김형태;송창섭;양해정
    • Journal of the Korean Society for Precision Engineering
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    • v.20 no.12
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    • pp.105-114
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    • 2003
  • In this study, a dicing machine with vision system was built and an algorithm for automatic alignment was developed for dual camera system. The system had a macro and a micro inspection tool. The algorithm was formulated from geometric relations. When a wafer was put on the cutting stage within certain range, it was inspected by vision system and compared with a standard pattern. The difference between the patterns was analyzed and evaluated. Then, the stage was moved by x, y, $\theta$ axes to compensate these differences. The amount of compensation was calculated from the result of the vision inspection through the automatic alignment algorithm. The stage was moved to the compensated position and was inspected by vision for checking its result again. Accuracy and validity of the algorithm was discussed from these data.

A Point of Production System for Semiconductor Wafer Dicing Process (반도체 웨이퍼 다이싱 공정을 위한 생산시점 정보관리시스템)

  • Kim, In-Ho
    • Journal of the Korea Society of Computer and Information
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    • v.14 no.10
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    • pp.55-61
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    • 2009
  • This paper describes a point of production(POP) system which collects and manages real-time shop floor machining information in a wafer dicing process. The system are composed of POP terminal, line controller and network. In the configuration of the system, LAN and RS485 network are used for connection with the upper management system and down stratum respectively. As a bridge between POP terminal and server, a line controller is used. The real-time information which is the base of production management are collected from information resources such as machine, product and worker. The collected information are used for the calculation of optimal cutting condition. The collection of the information includes cutting speed, spout of pure water, accumulated count of cut in process for blade and wafer defect. In order to manage machining information in wafer dicing process, production planning information is delivered to the shop floor, and production result information is collected from the shop floor, delivered to the server and used for managing production plan. From the result of the system application, production progress status, work and non-working hour analysis for each machine, and wafer defect analysis are available, and they are used for quality and productivity improvements in wafer dicing process. A case study is implemented to evaluate the performance of the system.

Fabrication of Probe Beam by Using Joule Heating and Fusing (절연절단법을 이용한 프로브 빔의 제작)

  • Hong, Pyo-Hwan;Kong, Dae-Young;Lee, Dong-In;Kim, Bonghwan;Cho, Chan-Seob;Lee, Jong-Hyun
    • Journal of Sensor Science and Technology
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    • v.22 no.1
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    • pp.89-94
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    • 2013
  • In this paper, we developed a beam of MEMS probe card using a BeCu sheet. Silicon wafer thickness of $400{\mu}m$ was fabricated by using deep reactive ion etching (RIE) process. After forming through silicon via (TSV), the silicon wafer was bonded with BeCu sheet by soldering process. We made BeCu beam stress-free owing to removing internal stress by using joule heating. BeCu beam was fused by using joule heating caused by high current. The fabricated BeCu beam measured length of 1.75 mm and width of 0.44 mm, and thickness of $15{\mu}m$. We measured fusing current as a function of the cutting planes. Maximum current was 5.98 A at cutting plane of $150{\mu}m^2$. The proposed low-cost and simple fabrication process is applicable for producing MEMS probe beam.