• Title/Summary/Keyword: WBG, Wide Band Gap

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Comparative Loss Analysis of Si MOSFET and GaN FET Power System (Si MOSFET vs. GaN FET Power System의 손실 분석)

  • Ahn, Jung-Hoon;Lee, Byoung-Kuk;Kim, Nam-Jun;Kim, Jong-Soo
    • Proceedings of the KIPE Conference
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    • 2013.11a
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    • pp.190-191
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    • 2013
  • 본 논문에서는 기존의 Si MOSFET을 사용한 전력시스템과 비교하여 WBG(Wide Band Gap)특성을 갖는 GaN(Gallium Nitride) FET을 사용한 전력시스템을 비교 분석한다. 대표성을 갖는 평가가 가능하도록 가장 일반적인 FB 구조를 대상으로 Si MOSFET과 GaN FET을 각각 적용하고, 다양한 기준 조건에서 효율과 전력 밀도 등 성능을 비교한다. 전체 과정은 수학적 계산 및 시뮬레이션으로 검증한다.

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공통모드 노이즈 저감을 위한 전력전자모듈

  • Sin, Jong-Won
    • Proceedings of the KIPE Conference
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    • 2018.07a
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    • pp.336-337
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    • 2018
  • 전력 전자 시스템 내의 전도성 노이즈는 반도체 스위칭 소자의 고속 동작에 큰 영향을 받는다. 특히 실리콘 카바이드 (SiC) 등의 신소재 반도체 소자 (wide band-gap device, WBG device) 특유의 고속 dv/dt 특성이 전력전자모듈 (power electronics module, PEM) 내의 기생 용량 (parasitic capacitance)에 인가될 경우 상당한 전도성 노이즈의 원인이 되므로 이를 해결할 필요가 있다. 본 논문에서는 유전율이 낮은 재료를 PEM 내부에 사용함으로써 기생 용량을 줄이고, 따라서 공통 모드 전류의 발생 또한 최소화할 수 있는 설계를 제안한다. 제안된 PEM 설계 기법은 외부 필터를 필요로 하지 않으며, PEM 내의 스위칭 소자-방열 소자간 열저항 (thermal resistance)를 증가시키지 않으면서도 기생 용량을 최소화하여 노이즈를 억제한다. 제안된 방법으로 제작된 PEM을 1 kW 출력 100 kHz 스위칭 주파수의 강압형 dc-dc 컨버터에 적용하여 공통모드 전도성 전류가 줄어듬을 증명하였다.

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Design and Implementation of Synchronous Rectified Boost Converter Based on GaN HEMT for LED Backlight in Vehicle (차량용 LED 백라이트 구동을 위한 GaN HEMT 기반의 동기 정류 부스트 컨버터 설계 및 구현)

  • Kim, Sung-Jae;Kim, Hyun-Bin;Yun, Jae-Joong;Kim, Jong-Soo
    • Proceedings of the KIPE Conference
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    • 2018.07a
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    • pp.322-323
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    • 2018
  • 차량용 LED 백라이트 구동회로는 시스템의 성능 향상을 위해 고밀도/고효율의 DC-DC컨버터가 요구되며 이를 위해 WBG(Wide Band Gap) 소자인 GaN HEMT가 기반의 동기 정류 부스트 컨버터의 설계 가이드를 제시하고 500kHz 스위칭 주파수의 30W급 동기 정류 부스트 컨버터를 구현한다.

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Thermal Design of High Power Semiconductor Using Insulated Metal Substrate (Insulated Metal Substrate를 사용한 고출력 전력 반도체 방열설계)

  • Bongmin Jeong;Aesun Oh;Sunae Kim;Gawon Lee;Hyuncheol Bae
    • Journal of the Microelectronics and Packaging Society
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    • v.30 no.1
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    • pp.63-70
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    • 2023
  • Today, the importance of power semiconductors continues to increase due to serious environmental pollution and the importance of energy. Particularly, SiC-MOSFET, which is one of the wide bandgap (WBG) devices, has excellent high voltage characteristics and is very important. However, since the electrical properties of SiC-MOSFET are heatsensitive, thermal management through a package is necessary. In this paper, we propose an insulated metal substrate (IMS) method rather than a direct bonded copper (DBC) substrate method used in conventional power semiconductors. IMS is easier to process than DBC and has a high coefficient of thermal expansion (CTE), which is excellent in terms of cost and reliability. Although the thermal conductivity of the dielectric film, which is an insulating layer of IMS, is low, the low thermal conductivity can be sufficiently overcome by allowing a process to be very thin. Electric-thermal co-simulation was carried out in this study to confirm this, and DBC substrate and IMS were manufactured and experimented for verification.

RC Snubber Analysis for Oscillation Reduction in Half-Bridge Configurations using Cascode GaN (Cascode GaN의 하프 브릿지 구성에서 오실레이션 저감을 위한 RC 스너버 분석)

  • Bongwoo, Kwak
    • Journal of IKEEE
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    • v.26 no.4
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    • pp.553-559
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    • 2022
  • In this paper, RC snubber circuit design technology for oscillation suppression in half-bridge configuration of cascode gallium nitride (GaN) field effect transistors (FETs) is analyzed. A typical wide band-gap (WBG) device, cascode GaN FET, has excellent high-speed switching characteristics. However, due to such high-speed switching characteristics, a false turn-off problem is caused, and an RC snubber circuit is essential to suppress this. In this paper, the commonly used experimental-based RC snubber design technique and the RC snubber design technique using the root locus method are compared and analyzed. In the general method, continuous circuit changes are required until the oscillation suppression performance requirement is met based on experimental experience . However, in root locus method, the initial value can be set based on the non-oscillation R-C map. To compare the performance of the two aforementioned design methods, a simulation experiment and a switching experiment using an actual double pulse circuit are performed.

Power Module Packaging Technology with Extended Reliability for Electric Vehicle Applications (전기자동차용 고신뢰성 파워모듈 패키징 기술)

  • Yoon, Jeong-Won;Bang, Jung-Hwan;Ko, Yong-Ho;Yoo, Se-Hoon;Kim, Jun-Ki;Lee, Chang-Woo
    • Journal of the Microelectronics and Packaging Society
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    • v.21 no.4
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    • pp.1-13
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    • 2014
  • The paper gives an overview of the concepts, basic requirements, and trends regarding packaging technologies of power modules in hybrid (HEV) and electric vehicles (EV). Power electronics is gaining more and more importance in the automotive sector due to the slow but steady progress of introducing partially or even fully electric powered vehicles. The demands for power electronic devices and systems are manifold, and concerns besides aspects such as energy efficiency, cooling and costs especially robustness and lifetime issues. Higher operation temperatures and the current density increase of new IGBT (Insulated Gate Bipolar Transistor) generations make it more and more complicated to meet the quality requirements for power electronic modules. Especially the increasing heat dissipation inside the silicon (Si) leads to maximum operation temperatures of nearly $200^{\circ}C$. As a result new packaging technologies are needed to face the demands of power modules in the future. Wide-band gap (WBG) semiconductors such as silicon carbide (SiC) or gallium nitride (GaN) have the potential to considerably enhance the energy efficiency and to reduce the weight of power electronic systems in EVs due to their improved electrical and thermal properties in comparison to Si based solutions. In this paper, we will introduce various package materials, advanced packaging technologies, heat dissipation and thermal management of advanced power modules with extended reliability for EV applications. In addition, SiC and GaN based WBG power modules will be introduced.

Characterization of various crystal planes of beta-phase gallium oxide single crystal grown by the EFG method using multi-slit structure (다중 슬릿 구조를 이용한 EFG 법으로 성장시킨 β-Ga2O3 단결정의 다양한 결정면에 따른 특성 분석)

  • Hui-Yeon Jang;Su-Min Choi;Mi-Seon Park;Gwang-Hee Jung;Jin-Ki Kang;Tae-Kyung Lee;Hyoung-Jae Kim;Won-Jae Lee
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.34 no.1
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    • pp.1-7
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    • 2024
  • β-Ga2O3 is a material with a wide band gap of ~4.8 eV and a high breakdown-voltage of 8 MV/cm, and is attracting much attention in the field of power device applications. In addition, compared to representative WBG semiconductor materials such as SiC, GaN and Diamond, it has the advantage of enabling single crystal growth with high growth rate and low manufacturing cost [1-4]. In this study, we succeeded in growing a 10 mm thick β-Ga2O3 single crystal doped with 0.3 mol% SnO2 through the EFG (Edge-defined Film-fed Growth) method using multi-slit structure. The growth direction and growth plane were set to [010]/(010), respectively, and the growth speed was about 12 mm/h. The grown β-Ga2O3 single crystal was cut into various crystal planes (010, 001, 100, ${\bar{2}}01$) and surface processed. The processed samples were compared for characteristics according to crystal plane through analysis such as XRD, UV/VIS/NIR/Spec., Mercury Probe, AFM and Etching. This research is expected to contribute to the development of power semiconductor technology in high-voltage and high-temperature applications, and selecting a substrate with better characteristics will play an important role in improving device performance and reliability.

Development of a 3 kW Grid-tied PV Inverter With GaN HEMT Considering Thermal Considerations (GaN HEMT를 적용한 3kW급 계통연계 태양광 인버터의 방열 설계 및 개발)

  • Han, Seok-Gyu;Noh, Yong-Su;Hyon, Byong-Jo;Park, Joon-Sung;Joo, Dongmyoung
    • The Transactions of the Korean Institute of Power Electronics
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    • v.26 no.5
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    • pp.325-333
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    • 2021
  • A 3 kW grid-tied PV inverter with Gallium nitride high-electron mobility transistor (GaN HEMT) for domestic commercialization was developed using boost converter and full-bridge inverter with LCL filter topology. Recently, many GaN HEMTs are manufactured as surface mount packages because of their lower parasitic inductance characteristic than standard TO (transistor outline) packages. A surface mount packaged GaN HEMT releases heat through either top or bottom cooling method. IGOT60R070D1 is selected as a key power semiconductor because it has a top cooling method and fairly low thermal resistances from junction to ambient. Its characteristics allow the design of a 3 kW inverter without forced convection, thereby providing great advantages in terms of easy maintenance and high reliability. 1EDF5673K is selected as a gate driver because its driving current and negative voltage output characteristics are highly optimized for IGOT60R070D1. An LCL filter with passive damping resistor is applied to attenuate the switching frequency harmonics to the grid-tied operation. The designed LCL filter parameters are validated with PSIM simulation. A prototype of 3 kW PV inverter with GaN HEMT is constructed to verify the performance of the power conversion system. It achieved high power density of 614 W/L and peak power efficiency of 99% for the boost converter and inverter.