Journal of IKEEE (전기전자학회논문지)

Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
권호 표지
DOI QR코드

DOI QR Code

RC Snubber Analysis for Oscillation Reduction in Half-Bridge Configurations using Cascode GaN

Cascode GaN의 하프 브릿지 구성에서 오실레이션 저감을 위한 RC 스너버 분석

  • Bongwoo, Kwak (Dept. of of Automotive Materials & Components R&D Group, Korea Institute of Industrial Technology)
  • Received : 2022.10.13
  • Accepted : 2022.10.26
  • Published : 2022.12.31
Download PDF
⟨ Previous Next ⟩

Abstract

In this paper, RC snubber circuit design technology for oscillation suppression in half-bridge configuration of cascode gallium nitride (GaN) field effect transistors (FETs) is analyzed. A typical wide band-gap (WBG) device, cascode GaN FET, has excellent high-speed switching characteristics. However, due to such high-speed switching characteristics, a false turn-off problem is caused, and an RC snubber circuit is essential to suppress this. In this paper, the commonly used experimental-based RC snubber design technique and the RC snubber design technique using the root locus method are compared and analyzed. In the general method, continuous circuit changes are required until the oscillation suppression performance requirement is met based on experimental experience . However, in root locus method, the initial value can be set based on the non-oscillation R-C map. To compare the performance of the two aforementioned design methods, a simulation experiment and a switching experiment using an actual double pulse circuit are performed.

본 논문에서는 cascode GaN FET의 하프 브릿지 구성에서 오실레이션 억제를 위한 RC 스너버 회로 설계 기술을 분석한다. 대표적인 WBG 소자인 cascode GaN FET는 우수한 고속 스위칭 특성이 우수하다. 다만, 이러한 고속 스위칭 특성으로 인하여 false turn-off 문제가 야기되며, 이를 억제하기 위해 RC 스너버 회로가 필수적이다. 따라서, 일반적으로 많이 사용되는 실험 기반의 선정 기법과 근궤적법을 이용한 분석 기법을 비교한다. 일반적인 방법의 경우 실험적 경험을 바탕으로 오실레이션 억제 성능이 만족될 때까지 지속적인 회로 변경이 필요하다. 하지만, 근궤적 기법의 경우 비진동 R-C 맵을 기반으로 초기값을 설정 할 수 있다. 이러한 설계 기술에 따른 성능을 비교하기 위해 모의실험과 실제 더블 펄스 회로 구성을 통한 실험을 진행하였다.

Keywords

Acknowledgement

This study was carried out as "Development of next-generation power semiconductor technology based on compound materials (00144490)" with the support of the Ministry of Trade, Industry and Energy.

References

  1. R. Ramachandran and M. Nymand, "Experimental demonstration of a 98.8% efficient isolated DC-DC GaN converter," IEEE Trans. Ind. Electron., vol.64, no.11, pp.9104-9113, 2017. DOI: 10.1109/TIE.2016.2613930
  2. J. Chen, Q. Luo, J. Huang, Q. He, P. Sun and X. Du, "Analysis and Design of an RC Snubber Circuit to Suppress False Triggering Oscillation for GaN Devices in Half-Bridge Circuits," IEEE Transactions on Power Electronics, vol.35, no.3, pp.2690-2704, 2020. https://doi.org/10.1109/TPEL.2019.2927486
  3. K. J. Chen et al., "GaN-on-Si Power Technology: Devices and Applications," in IEEE Transactions on Electron Devices, vol.64, no.3, pp.779-795, 2017. DOI: 10.1109/TED.2017.2657579
  4. X. Huang, Z. Liu, Q. Li and F. C. Lee, "Evaluation and Application of 600 V GaN HEMT in Cascode Structure," in IEEE Transactions on Power Electronics, vol.29, no.5, pp.2453-2461, 2014. DOI: 10.1109/APEC.2013.6520464
  5. X. Huang, W. Du, F. C. Lee, Q. Li, and W. Zhang, "Avoiding divergent oscillation of a cascode GaN device under high-current turn-off condition," IEEE Trans. Power Electron., vol.32, no.1, pp.593-601, 2017. DOI: 10.1109/TPEL.2016.2532799
  6. P. Xue and F. Iannuzzo, "Self-Sustained Turn-OFF Oscillation of Cascode GaN HEMTs: Occurrence Mechanism, Instability Analysis, and Oscillation Suppression," in IEEE Transactions on Power Electronics, vol.37, no.5, pp.5491-5500, 2022. DOI: 10.1109/TPEL.2021.3131535
  7. T. Liu, T. T. Y. Wong and Z. J. Shen, "A Survey on Switching Oscillations in Power Converters," in IEEE Journal of Emerging and Selected Topics in Power Electronics, vol.8, no.1, pp.893-908, 2020. DOI: 10.1109/JESTPE.2019.2897764
  8. X. Yang, M. Xu, Q. Li, Z. Wang and M. He, "Analytical Method for RC Snubber Optimization Design to Eliminate Switching Oscillations of SiC MOSFET," in IEEE Transactions on Power Electronics, vol.37, no.4, pp.4672-4684, 2022. DOI: 10.1109/TPEL.2021.3127516
  9. B. N. Torsaeter, S. Tiwari, R. Lund and O.-M. Midtgard, "Experimental evaluation of switching characteristics, switching losses and snubber design for a full SiC half-bridge power module," 2016 IEEE 7th International Symposium on Power Electronics for Distributed Generation Systems (PEDG), pp.1-8, 2016. DOI: 10.1109/PEDG.2016.7527071
  10. K. Harada and T. Ninomiya, "Optimum Design of RC Snubbers for Switching Regulators," in IEEE Transactions on Aerospace and Electronic Systems, vol.AES-15, no.2, pp.209-218, 1979. DOI: 10.1109/TAES.1979.308707