• Korean Chemical Engineering Research
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• v.48 no.3
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• pp.365-374
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• 2010

The ash reduction effects and fuel property changes of spent mushroom substrates by acid solution extraction, and the production possibilities of wood pellet fuel using them were studied. The ash weight of spent Pleurotus eryngii substrates was reduced from 8.81%(w/w) to 3.33%(w/w), and calorific value was increased from 3,958.3 kcal/kg to 4219.2 kcal/kg when extracted with a mixture of Acetic acid 2%(w/w) and Anhydrous citric acid 1%(w/w) in condition of liquid ratio 1:8, extraction temperature $55^{\circ}C$ and extraction time 180 min. The ash weight of spent Flammulina velutipes substrates was reduced from 14.91%(w/w) to 4.07%(w/w), and calorific value was increased from 4,190.3 kcal/kg to 4,219.2 kcal/kg when extracted with a mixture of Acetic acid 3%(w/w) and Anhydrous citric acid 1%(w/w) in condition of liquid ratio 1:8, extraction temperature $65^{\circ}C$ and extraction time 180 min. The ash weight of spent Pleurotus osteratus substrates was reduced from 3.31%(w/w) to 0.59%(w/w), and the smallest reduction was in calorific value from 4,558.6 kcal/kg to 4,216.2 kcal/kg when extracted with a mixture of Acetic acid 1%(w/w) and Anhydrous citric acid 1%(w/w) in condition of liquid ratio 1:8, extraction temperature $65^{\circ}C$ and extraction time 180 min.

• Journal of the Korean Electrochemical Society
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• v.6 no.4
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• pp.236-241
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• 2003

Magnetic CoW thin film alloys were electrodeposited from citrate baths to investigate the resulting microstructure and magnetic properties. Deposit tungsten (W) content in the films electrodeposited at $70^{\circ}C$ were independent of current density, while coercivity decreased from hard $(H_{c,//}\~150\;Oe\;and\;H_{c.{\bot}}\;\~240\;Oe)$ to soft magnetic properties $(H_{c,//}\~20\;Oe\;and\;H_{c.{\bot}}\;\~30\;Oe)$ with increasing current densities from $10\;to\;100mA{\cdot}cm^2$, with deposit W content $(\~40\%)$ relatively unaffected by the applied current density. X-ray diffraction analysis indicated that hcp $Co_3W$ phases [(200), (201) and (220) planes] in the CoW films electrodeposited at $70^{\circ}C\;and\;10mA{\cdot}cm^{-2}$ were dominant, whereas amorphous CoW phases with small amount of hcp $Co_3W$ [(002) planes] were dominant with deposition at $70^{\circ}C\;and\;100mA{\cdot}cm^{-2}$. At intermediate current densities $(25\;and\;50mA{\cdot}cm^{-2}),\;hop\;Co_3W$ phases [(200), (002), (201) and (220)] were observed. The average grain size was measured to be 30 nm from Sheller formula. It is suggested that the change of the deposit coercivities in the CoW thin films electrodeposited at $70^{\circ}C$ is attributed to the change of microstructures with varying the current density. Nanostructured $Co_3W/amorphous-CoW$ multilayers were fabricated by alternating current density between 10 and $100 mA{\cdot}cm^{-2}$, varying the individual layer thickness. The magnetic properties of $Co_3W/amorphous-CoW$ multilayers were strongly dependent on the thickness of the alternating hard and soft magnetic thin films. The nanostructured $Co_3W/amorphous-CoW$ multilayers exhibited a shift from low to high coercivities suggesting a strong coupling effect.

• Korean Journal of Materials Research
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• v.10 no.2
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• pp.144-147
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• 2000

10%C-5%Mo-5%W-10%Cr 및 10%C-5%Mo-5%W-10%V 백주철의 응고거동을 열분석을 통하여 연구하였다. 15Kg 용량의 고주파 유도옹해로에 선철, 고철, Fe-Mo, Fe-W, Fe-Cr, Fe-V 등을 장입시켜 용해시킨 후 슬래그를 제거시키고 $1550^{\circ}C$에서 Y블럭의 펩 주형에 주입하였다. 응고거동을 조사하기 위하여 50g을 Y블럭에서 채취한 뒤 알루미나 도가니에 넣어 재용해시킨 후 1$0^{\circ}C$/min의 냉각속도로 냉각시키면서 여섯 종류의 다른 온도에서 도중에 급냉시켜 응고조직을 광학현미경으로 관찰하였다. 10%C-5%Mo-5%W-10%Cr 백주철의 경우 초정 오스테나이트, 오스테나이트와 M(sub)7C(sob)3의 공정, 오스테나이트와 M(sub)6C의 공정으로, 10%C-5%Mo-5%W-10%V 백주철의 경우 초정 MC, 오스테나이트와 MC의 공정, 오스테나이트와 M(sub)2C의 공정으로 각각 순차적으로 정출하였다. 정출하였다.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1311-1312
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• 2006

This paper describes the ohmic contact formation between a TiW film as a contact material deposied by RF magnetron sputter and polycrystalline 3C-SiC films deposied on thermally grown Si wafers. The specific contact resistance (${\rho}_c$) of the TiW contact was measured by using 4he C-TLM. The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature were also analyzed by XRD and SEM. All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30min., the lowest contact resistivity of $2.90{\times}10^{-5}{\Omega}{\cdot}cm^2$ of was obtained due to the improved interfacial adhesion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.406-407
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• 2006

This paper describes the ohmic contact formation between a TiW film as a contact material deposied by RF magnetron sputter and polycrystalline 3C-SiC films deposied on thermally grown Si wafers. The specific contact resistance (${\rho}_c$) of the TiW contact was measured by using the C-TLM. The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature were also analyzed by XRD and SEM. All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30min., the lowest contact resistivity of $2.90{\times}10^{-5}{\Omega}cm^2$ was obtained due to the improved interfacial adhesion.

• Journal of Sensor Science and Technology
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• v.15 no.6
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• pp.386-390
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• 2006

This paper describes the ohmic contact formation of polycrystalline 3C-SiC films deposited on thermally grown Si wafers. In this work, a TiW (titanium tungsten) film as a contact material was deposited by RF magnetron sputter and annealed with the vacuum process. The specific contact resistance (${\rho}_{c}$) of the TiW contact was measured by using the C-TLM (circular transmission line method). The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature as also analyzed by XRD (X-ray diffraction) and SEM (scanning electron microscope). All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30 min., the lowest contact resistivity of $2.90{\times}10{\Omega}cm^{2}$ was obtained due to the improved interfacial adhesion. Therefore, the good ohmic contact of polycrystalline 3C-SiC films using the TiW film is very suitable for high-temperature MEMS applications.

• Korean Journal of Materials Research
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• v.12 no.5
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• pp.414-422
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• 2002

Three different multi-component white cast irons alloyed with Cr, V, Mo and W were prepared in order to study their as-cast and solidification structures. Three combinations of the alloying elements were selected so as to obtain the different types of carbides and matrix structures : 3%C-10%Cr-5%Mo-5%W(alloy No.1), 3%C-10%V-5% Mo-5%W(alloy No. 2) and 3%C-17%Cr-3% V(alloy No.3). The as-cast microstructures were investigated with optical and scanning electron microscopes. There existed two different types of carbides, $M_7C_3$ carbide with rod-like morphology and $M_6C$ carbide with fishbone-like one, and matrix in the alloy No. 1. The alloy No. 2 consisted of MC carbide with chunky and flaky type and needle-like $M_2C$ carbide, and matrix. The chunky type referred to primary MC carbide and the flaky one to eutectic MC carbide. The morphology of the alloy No. 3 represented a typical hypo-eutectic high chromium white cast iron composed of rod-like $M_7C_3$ carbide which is very sensitive to heat flow direction and matrix. To clarify the solidification sequence, each iron(50g) was remelted at 1723K in an alumina crucible using a silicon carbide resistance furnace under argon atmosphere. The molten iron was cooled at the rate of 10K/min and quenched into water at several temperatures during thermal analysis. The solidification structures of the specimen were found to consist of austenite dendrite(${\gamma}$), $ ({\gamma}+ M_7C_3)$ eutectic and $({\gamma}+ M_6C)$ eutectic in the alloy No. 1, proeutectic MC, austenite dendrite(${\gamma}$), (${\gamma}$+MC) eutectic and $({\gamma}+ M_2C)$ eutectic in the alloy No. 2, and proeutectic $M_7C_3$ and $ ({\gamma}+ M_7C_3)$ eutectic in the alloy No 3. respectively.

• Korean Journal of Mathematics
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• v.30 no.3
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• pp.467-474
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• 2022

In this article, we consider the integral operator 𝓒^b,c, which is defined as follows: $${\mathcal{C}}^{b,c}(f)(z)={\displaystyle\smashmargin{2}{\int\nolimits_{0}}^z}{\frac{f(w)*F(1,1;c;w)}{w(1-w)^{b+1-c}}}dw,$$ where * denotes the Hadamard/ convolution product of power series, F(a, b; c; z) is the classical hypergeometric function with b, c > 0, b + 1 > c and f(0) = 0. We investigate the boundedness of the 𝓒^b,c operators on Bloch spaces.

• Journal of the Korean Mathematical Society
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• v.53 no.1
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• pp.1-17
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• 2016

Let $\mathcal{W}$ be an additive full subcategory of the category R-Mod of left R-modules. We provide a method to construct a proper ${\mathcal{W}}^H_C$-resolution (resp. coproper ${\mathcal{W}}^T_C$-coresolution) of one term in a short exact sequence in R-Mod from those of the other two terms. By using these constructions, we introduce and study the stability of the Gorenstein categories ${\mathcal{G}}_C({\mathcal{W}}{\mathcal{W}}^T_C)$ and ${\mathcal{G}}_C({\mathcal{W}}^H_C{\mathcal{W}})$ with respect to a semidualizing bimodule C, and investigate the 2-out-of-3 property of these categories of a short exact sequence by using these constructions. Also we prove how they are related to the Gorenstein categories ${\mathcal{G}}((R{\ltimes}C){\otimes}_R{\mathcal{W}})_C$ and ${\mathcal{G}}(Hom_R(R{\ltimes}C,{\mathcal{W}}))_C$ over $R{\ltimes}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.234-239
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• 2007

This paper describes the TiW ohmic contact characteristics under the surface treatment of the polycrystalline 3C-SiC thin film grown on $SiO_2/Si(100)$ wafers by APCVD. The poly 3C-SiC surface was polished by using CMP(chemical mechanical polishing) process and then oxidized by wet-oxidation process, and finally removed SiC oxide layers. A TiW thin film as a metalization process was deposited on the surface treated poly 3C-SiC layer and was annealed through a RTA(rapid thermal annealing) process. TiW/poly 3C-SiC was investigated to get mechanical, physical, and electrical characteristics using SEM, XRD, XPS, AFM, optical microscope, I-V characteristic, and four-point probe, respectively. Contact resistivity of the surface treated 3C-SiC was measured as the lowest $1.2{\times}10^{-5}{\Omega}cm^2$ at $900^{\circ}C$ for 45 sec. Therefore, the surface treatments of poly 3C-SiC are necessary to get better contact resistance for extreme environment MEMS applications.