• 한국전기전자재료학회논문지
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• 제13권7호
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• pp.568-574
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• 2000

We have been optimized tungsten(W) plug CMP(chemical mechanical polishing) characteristics using two different kinds of component of slurry and two different kinds of pad which have different hardness. The comparison of oxide film roughness on around W plug after polishing has been carried out. And W plug recess for consumable sets and dishing effect at dense area according to the rate of over-polishing has been investigated. Also the analysis of residue on surface after cleaning have been performed. As a experimental result we have concluded that the consumable set of slurry A and hard pad was good for W plug CMP process. After decreasing the rate of chemical reaction of silica slurry and adding two step buffering we could reduce the expanding of W plug void however we are still recognizing to need a more development for those kinds of CMP consumables.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.366-367
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• 2006

In general, HF chemistry lifts off the particles during scrubbing after polishing and effectively removes particles. It is sometimes impossible to apply HF chemistry on W plug due to the degradation of electrical characteristics of a device. In this paper, a post W CMP cleaning process is proposed to remove residue particles without applying HF chemistry. After W CMP, recessed plugs are created, therefore they easily trap slurry particles during CMP process. These particles in recessed plug are not easy to remove by brush scrubbing when $NH_4OH$ chemistry is used for the cleaning because the brush surface can not reach the recessed area of plugs. Buffing with oxide slurry was followed by W CMP due to its high selectivity to W. The buffing polishes only oxide slightly which creates higher plug profiles than surrounding oxide. Higher profiles make the brush contact much more effectively and result in a similar particle removal efficiency even in $NH_4OH$ cleaning to that in HF brush scrubbing.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 반도체재료
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• pp.54-56
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• 2001

The $SiH_4$ soak step is widely used during the CVD Tungsten(W) plug deposition process on the Ti/TiN barrier metal to prevent the $WF_6$ attack to the underlayer metal. We tried to reduce or skip the time of $SiH_4$ soak process to optimize W-plug deposition process on Via. The electrical characteristics including Via resistance and the structure of W film are affected according to $SiH_4$ soak time. The elimination possibility of $SiH_4$ soak process was confirmed in the case of that the CVD W film grows on the stable Ti/TiN underlayer.

• 한국안전학회지
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• 제28권4호
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• pp.43-47
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• 2013

The purpose of this paper is to evaluate the performance of a Plug-In MCCB developed for rapid power supply restoration when the MCCB is installed in a power system and to verify its reliability. Since the developed 3 ${\Phi}$ 3 W Plug-In MCCB can be installed on and removed from a bus bar by one touch using a plug housed at the rear, it can be replaced in a short period of time. Therefore, it can quickly respond to the normalization of a power system. When the Plug-In MCCBB is installed on a bus bar, the resistance between each phase and plug was measured to be 0.46 $m{\Omega}$ in average. When the Plug-In MCCB is installed, the tension in the vertical direction was measured to be 112.78 N in average, which is greater than the tension of 50 N specified in the related regulation. The withstanding voltage tests performed 5 times repeatedly by applying 6 kV to the developed Plug-In MCCB for 60 seconds shows good withstanding voltage characteristics. In addition, both the general waterproof test using a water injection method and the insulation resistance analysis using a Mega meter showed good waterproof and insulation characteristics.

• 한국재료학회지
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• 제26권9호
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• pp.486-492
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• 2016

Tungsten (W) thin film was deposited at $400^{\circ}C$ using pulsed chemical vapor deposition (pulsed CVD); film was then evaluated as a nucleation layer for W-plug deposition at the contact, with an ultrahigh aspect ratio of about 14~15 (top opening diameter: 240~250 nm, bottom diameter: 98~100 nm) for dynamic random access memory. The deposition stage of pulsed CVD has four steps resulting in one deposition cycle: (1) Reaction of $WF_6$ with $SiH_4$. (2) Inert gas purge. (3) $SiH_4$ exposure without $WF_6$ supply. (4) Inert gas purge while conventional CVD consists of the continuous reaction of $WF_6$ and $SiH_4$. The pulsed CVD-W film showed better conformality at contacts compared to that of conventional CVD-W nucleation layer. It was found that resistivities of films deposited by pulsed CVD were closely related with the phases formed and with the microstructure, as characterized by the grain size. A lower contact resistance was obtained by using pulsed CVD-W film as a nucleation layer compared to that of the conventional CVD-W nucleation layer, even though the former has a higher resistivity (${\sim}100{\mu}{\Omega}-cm$) than that of the latter (${\sim}25{\mu}{\Omega}-cm$). The plan-view scanning electron microscopy images after focused ion beam milling showed that the lower contact resistance of the pulsed CVD-W based W-plug fill scheme was mainly due to its better plug filling capability.

• 한국산학기술학회논문지
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• 제20권4호
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• pp.619-625
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• 2019

저심도 터널에서는 온도차에 의한 부력을 이용한 자연배기시스템이 많이 사용되고 있지만 이는 연기배출을 인위적으로 조절할 수 없다. 그러므로 자연배기시스템에서는 수직환기구에서 연기 배출량이 설계된 연기 배출량보다 적어지는 Plug-holing 현상을 고려한 설계가 필수적이다. Plug-holing 현상은 터널과 수직환기구의 형상 위치, 화원의 위치와 발열량 등에 영향을 받는다. 본 연구에서는 터널과 자연 환기구의 단면적 비와 화원의 열방출률이 자연배기시스템에서 발생하는 Plug-holing 현상에 미치는 영향에 대하여 실험적으로 분석하였다. 1/20 크기로 축소시킨 실험모델에서 터널과 수직환기구의 종횡비는 고정시키고 터널과 수직환기구의 단면적 비를 달리하여 Plug-holing 현상에 미치는 영향을 확인하였다. 화원의 열방출율은 0.55 kW, 0.98 kW, 1.67 kW로 고정시켰다. 실험결과, 연기 경계층온도와 수직환기구 내의 온도와의 비교를 통한 Plug-holing 발생을 판단하였고, 터널과 수직환기구의 단면적 비가 증가함에 따라서 수직환기구 하부의 유동과 온도분포 특성이 변함을 확인하였다. 터널 화재 시 Plug-holing 현상은 터널과 수직환기구의 단면적 비에 영향을 받으며 단면적 비가 클수록 Plug-holing 발생 가능성이 증가하였다.

• 한국전기전자재료학회논문지
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• 제16권1호
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• pp.1-4
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• 2003

The SiH$_4$soak step is widely used to prevent the WF$_{6}$ attack to the underlayer metal using the chemical vapor deposition (CVD) method. Reduction or skipping of the SiH$_4$soak process time if lead to optimizing W-plug deposition process on via. The electrical characteristics including via resistance and the structure of W-film are affected by the time of SiH$_4$soak process. The possibility of elimination of SiH$_4$soak process is confirmed In the case of W- film grown on the stable Ti/TiN underlayer.

• 전자공학회논문지A
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• 제31A권5호
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• pp.94-100
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• 1994

The junction failure mechanism of W plugs has not been fully understood while the selective W deposition has been widely used for plugging interconnection lines. In this paper, the thermal stability and junction failure mechanism of sub-micron contacts using selective CVD-W plugs were intensively studied with the metal lines of AISiCu, Ti/AISiCu and TiN/AISiCu. The experimental results showed that the contact chain resistance and leakage current in the AISiCu and Ti/AISiCu metallizations were significantly degraded after annealing. From the SEM analysis, it was found that the junction spiking, due to the Al atoms diffusion along the porous interface between selective CVD-W and contactside wall, caused the junction failure. In constast, there was no degradation of the contact resistance and junction leakage current in TiN/AISiCu metal structu-re. It is believed that the TiN barrier layer could prevent AI(Ti) atoms Fromdiffusing. Therefore, TiN barrier between W plug and Al should be used to impro-ve the thermal stability of sub-micron contacts using the selective CVD-W plugs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.321-322
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• 2006

The electrical properties of PZT thin film capacitor on TiN/W plug structure were investigated for high density ferroelectric memory devices. In order to enhance the ferroelectric properties of PZT capacitor, the process conditions of bottom electrodes were optimized. The fabricated PZT capacitor on TiN/W plug showed good remanent polarization, leakage current, and contact resistance of TiN/W plug, which were $33\;{\mu}C/cm^2$, $1.2{\times}10^{-6}\;A/cm^2$, and 5.3 ohm/contact, respectively.

• 생물환경조절학회지
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• 제25권4호
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• pp.302-307
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• 2016

동절기에 공정육묘장에서 난방 에너지 절감과 우량묘 생산을 위해 나노탄소섬유적외선 난방등(NCFIHL, nano-carbon fiber infrared heating lamp)의 적정 전력과 설치높이를 구명하는 것이 본 연구의 목적이다. 벤로형 유리온실 내부에 수박 접목묘를 재배하기 위해 700과 900W NCFIHL을 육묘 베드($1.2{\times}2.4m$)에서 0.7, 1.0, 및 1.3m 높이로 각각 설치하였다. 수박(Citrullus lanatus (Thunb.) Manst.) '지존꿀'과 박(Lagenaria leucantha Rusby.) '선봉장'은 각각 접수와 대목으로 사용되었다. 접수와 대목은 편엽합접 방식으로 접목되었다. NCFIHL의 광도는 모든 처리에서 $1{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$ 이하였다. NCFIHL의 광분포는 대부분 적외선 영역에서 나타났다. 외기온도가 $10^{\circ}C$ 이하일 때 700과 900W NCFIHL을 0.7m 높이로 설치한 처리구와 900W NCFIHL을 1.0m 높이로 설치한 처리에서 야간 설정온도($20^{\circ}C$)를 유지하였다. 열화상 촬영에서는 900W NCFIHL을 0.7m 높이로 설치한 처리에서 가장 빨리 식물체의 온도가 올라갔다. Compactness는 700W NCFIHL을 1.3m 높이로 설치한 처리에서 우수하였다. 결과적으로 700W NCFIHL을 1.0m 이상으로 설치하는 것이 바람직하다고 판단된다.