• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.7
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• pp.568-574
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• 2000

We have been optimized tungsten(W) plug CMP(chemical mechanical polishing) characteristics using two different kinds of component of slurry and two different kinds of pad which have different hardness. The comparison of oxide film roughness on around W plug after polishing has been carried out. And W plug recess for consumable sets and dishing effect at dense area according to the rate of over-polishing has been investigated. Also the analysis of residue on surface after cleaning have been performed. As a experimental result we have concluded that the consumable set of slurry A and hard pad was good for W plug CMP process. After decreasing the rate of chemical reaction of silica slurry and adding two step buffering we could reduce the expanding of W plug void however we are still recognizing to need a more development for those kinds of CMP consumables.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.366-367
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• 2006

In general, HF chemistry lifts off the particles during scrubbing after polishing and effectively removes particles. It is sometimes impossible to apply HF chemistry on W plug due to the degradation of electrical characteristics of a device. In this paper, a post W CMP cleaning process is proposed to remove residue particles without applying HF chemistry. After W CMP, recessed plugs are created, therefore they easily trap slurry particles during CMP process. These particles in recessed plug are not easy to remove by brush scrubbing when $NH_4OH$ chemistry is used for the cleaning because the brush surface can not reach the recessed area of plugs. Buffing with oxide slurry was followed by W CMP due to its high selectivity to W. The buffing polishes only oxide slightly which creates higher plug profiles than surrounding oxide. Higher profiles make the brush contact much more effectively and result in a similar particle removal efficiency even in $NH_4OH$ cleaning to that in HF brush scrubbing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.54-56
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• 2001

The $SiH_4$ soak step is widely used during the CVD Tungsten(W) plug deposition process on the Ti/TiN barrier metal to prevent the $WF_6$ attack to the underlayer metal. We tried to reduce or skip the time of $SiH_4$ soak process to optimize W-plug deposition process on Via. The electrical characteristics including Via resistance and the structure of W film are affected according to $SiH_4$ soak time. The elimination possibility of $SiH_4$ soak process was confirmed in the case of that the CVD W film grows on the stable Ti/TiN underlayer.

• Journal of the Korean Society of Safety
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• v.28 no.4
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• pp.43-47
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• 2013

The purpose of this paper is to evaluate the performance of a Plug-In MCCB developed for rapid power supply restoration when the MCCB is installed in a power system and to verify its reliability. Since the developed 3 ${\Phi}$ 3 W Plug-In MCCB can be installed on and removed from a bus bar by one touch using a plug housed at the rear, it can be replaced in a short period of time. Therefore, it can quickly respond to the normalization of a power system. When the Plug-In MCCBB is installed on a bus bar, the resistance between each phase and plug was measured to be 0.46 $m{\Omega}$ in average. When the Plug-In MCCB is installed, the tension in the vertical direction was measured to be 112.78 N in average, which is greater than the tension of 50 N specified in the related regulation. The withstanding voltage tests performed 5 times repeatedly by applying 6 kV to the developed Plug-In MCCB for 60 seconds shows good withstanding voltage characteristics. In addition, both the general waterproof test using a water injection method and the insulation resistance analysis using a Mega meter showed good waterproof and insulation characteristics.

• Korean Journal of Materials Research
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• v.26 no.9
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• pp.486-492
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• 2016

Tungsten (W) thin film was deposited at $400^{\circ}C$ using pulsed chemical vapor deposition (pulsed CVD); film was then evaluated as a nucleation layer for W-plug deposition at the contact, with an ultrahigh aspect ratio of about 14~15 (top opening diameter: 240~250 nm, bottom diameter: 98~100 nm) for dynamic random access memory. The deposition stage of pulsed CVD has four steps resulting in one deposition cycle: (1) Reaction of $WF_6$ with $SiH_4$. (2) Inert gas purge. (3) $SiH_4$ exposure without $WF_6$ supply. (4) Inert gas purge while conventional CVD consists of the continuous reaction of $WF_6$ and $SiH_4$. The pulsed CVD-W film showed better conformality at contacts compared to that of conventional CVD-W nucleation layer. It was found that resistivities of films deposited by pulsed CVD were closely related with the phases formed and with the microstructure, as characterized by the grain size. A lower contact resistance was obtained by using pulsed CVD-W film as a nucleation layer compared to that of the conventional CVD-W nucleation layer, even though the former has a higher resistivity (${\sim}100{\mu}{\Omega}-cm$) than that of the latter (${\sim}25{\mu}{\Omega}-cm$). The plan-view scanning electron microscopy images after focused ion beam milling showed that the lower contact resistance of the pulsed CVD-W based W-plug fill scheme was mainly due to its better plug filling capability.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.4
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• pp.619-625
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• 2019

It is difficult to design because of the plug-holing phenomenon in which the amount of smoke discharged from the vertical vent is smaller than the designed amount of smoke. In this study, the effect of cross-sectional area ratio of tunnel and natural ventilation and heat release rate of fire source on plug-holing phenomenon occurring in natural ventilation system was experimentally analyzed. In the experiment model reduced to 1/20 size, the aspect ratio of the tunnel and the vertical vent was fixed, and the influence on the plug-holing phenomenon was confirmed by varying the sectional area ratio of the tunnel and the vertical vent. Experimental results show that the plug-holing phenomenon is caused by the comparison of the smoke boundary layer temperature with the temperature in the vertical vents, and the flow and temperature distribution characteristics under the vertical vents are changed as the cross-sectional area ratio of the tunnel and vertical vents increases. The plug-holing phenomenon is affected by the cross-sectional area ratio between the tunnel and the vertical ventilation. The greater the cross-sectional area ratio, the greater the probability of plug-holing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.1-4
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• 2003

The SiH$_4$soak step is widely used to prevent the WF$_{6}$ attack to the underlayer metal using the chemical vapor deposition (CVD) method. Reduction or skipping of the SiH$_4$soak process time if lead to optimizing W-plug deposition process on via. The electrical characteristics including via resistance and the structure of W-film are affected by the time of SiH$_4$soak process. The possibility of elimination of SiH$_4$soak process is confirmed In the case of W- film grown on the stable Ti/TiN underlayer.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.5
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• pp.94-100
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• 1994

The junction failure mechanism of W plugs has not been fully understood while the selective W deposition has been widely used for plugging interconnection lines. In this paper, the thermal stability and junction failure mechanism of sub-micron contacts using selective CVD-W plugs were intensively studied with the metal lines of AISiCu, Ti/AISiCu and TiN/AISiCu. The experimental results showed that the contact chain resistance and leakage current in the AISiCu and Ti/AISiCu metallizations were significantly degraded after annealing. From the SEM analysis, it was found that the junction spiking, due to the Al atoms diffusion along the porous interface between selective CVD-W and contactside wall, caused the junction failure. In constast, there was no degradation of the contact resistance and junction leakage current in TiN/AISiCu metal structu-re. It is believed that the TiN barrier layer could prevent AI(Ti) atoms Fromdiffusing. Therefore, TiN barrier between W plug and Al should be used to impro-ve the thermal stability of sub-micron contacts using the selective CVD-W plugs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.321-322
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• 2006

The electrical properties of PZT thin film capacitor on TiN/W plug structure were investigated for high density ferroelectric memory devices. In order to enhance the ferroelectric properties of PZT capacitor, the process conditions of bottom electrodes were optimized. The fabricated PZT capacitor on TiN/W plug showed good remanent polarization, leakage current, and contact resistance of TiN/W plug, which were $33\;{\mu}C/cm^2$, $1.2{\times}10^{-6}\;A/cm^2$, and 5.3 ohm/contact, respectively.

• Journal of Bio-Environment Control
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• v.25 no.4
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• pp.302-307
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• 2016

The aim of this study was to examine the optimum wattage and installation height using nano-carbon fiber infrared heating lamp (NCFIHL) for heating energy saving and plug seedling production in plug seedling production greenhouse in winter season. NCFIHL of 700 and 900 W was installed over the bed ($1.2{\times}2.4m$) as 0.7, 1.0, and 1.3 m height, respectively, for the production of grafted watermelon seedling in venlo-type glasshouse. Watermelon (Citrullus lanatus (Thunb.) Manst.) 'Jijonggul' and gourd (Lagenaria leucantha Rusby.) 'Sunbongjang' were used as scions and rootstocks, respectively. The scions and rootstocks were grafted by single cotyledon ordinary splice grafting. Light intensity of NCFIHL was below the $1{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$ in all treatment. Spectral distributions of NCFIHL presented mostly infrared area. When outside air temperature was below $10^{\circ}C$, 700 and 900 W NCFIHL installed with 0.7 m height treatment and 900 W NCFIHL installed with 1.0 m height treatment maintained the setting air temperature ($20^{\circ}C$) at night. In the result of taking thermal imaging, the grafted watermelons were getting warm fast in 900 W NCFIHL installed with 0.7 m height treatment at night. Compactness of the grafted watermelons was the greatest in 700 W NCFIHL installed with 1.3 m height treatment. The results indicate that NCFIHL installed above 1.0 m height using 700 W was suitable for production of plug seedling.