• Title/Summary/Keyword: W/Mo

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Suppression of Microwelding on RF MEMS Direct Contact Switches (직접접촉식 RF MEMS 스위치에서의 미소용접 현상 억제)

  • Lee, Tae-Won;Kim, Seong-Jun;Park, Sang-Hyun;Lee, Ho-Young;Kim, Yong-Hyup
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.33 no.4
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    • pp.41-46
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    • 2005
  • In this paper, a new method for suppressing microwelding on the RF MEMS (Radio Frequency Microelectromechanical System) direct contact switches is introduced. Two kinds of refractory metals, tungsten and molybdenum were coated onto the contact point of the switches and the effect of the coating was examined. The changes in insertion loss and isolation at the switch were measured by using network analyzer and power loss was evaluated by power measurement. The results revealed that while tungsten and molybdenum showed higher contact resistance than gold in low input power range, they enhanced the power handling capability and reliability of the switches in high input power region.

The Characteristics of Temperature Distributions for Flat Tube Type Solar Collector Type (평판형 태양열 집열판의 집열관 온도분포 특성)

  • Mo, J.G.;Bae, C.H.;Jeong, H.M.;Chung, H.S.
    • Solar Energy
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    • v.19 no.3
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    • pp.85-91
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    • 1999
  • This study represented experimental research on the flat-plate solar collector. The heat performances were measured the tube array surface temperature by thermal-couple. The solar collector($W{\times}H$) of $580{\times}1100$, various tilt angles of 30, 45, 60 degree and the internal tube number of 4, 6, 8, 10(ea) were utilized in the present investigation. It is found that the thermal concentration is higher as the tilt angle become larger and the solar tubes are more and more. In this stuby obtained results of following: The array of tubes in collector has the best nice in that the number of tube is eight and the tilt angle is 60 degree. The collect energy by each tube array shown high value by increase the number of tubes and tilt angles. In addition to, the collect energy depends on by the tilt angle than the number of tube.

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Distributions of the velocity and pressure of the pulsatile laminar flow in a pipe with the various frequencies (주파수의 변화에 따른 원형관로내 층류맥동유동의 속도와 압력의 분포)

  • Bae, S.C.;Mo, Y.W.
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.9 no.4
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    • pp.561-571
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    • 1997
  • In this paper, the fundamental equations are developed for the pulsatile laminar flow generated by changing the oscillatory flow with $0{\leq}f{\leq}48Hz$ into a steady one with $0{\leq}Re{\leq}2500$ in a rigid circular pipe. Analytical solutions for the wave propagation factor k, the axial distributions of cross-sectional mean velocity $u_m$ and pressure p are schematically derived and confirmed experimentally. The axial distributions of centerline velocity and pressure were measured by using Pitot-static tubes and strain gauge type pressure transducers, respectively. The cross-sectional mean velocity was calculated from the centerline velocity by applying the parabolic distribution of the laminar flow and it was confirmed by using the ultrasonic flowmeter. It was found that the axial distributions of cross-sectional mean velocity and pressure agree well with theoretical ones and depend only on the Reynolds number Re and angular velocity $\omega$.

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Effect of the Streptozotocin Induced Diabetes in the Rat Submandibular Glands (Streptozotocin유도 당뇨병이 백서 악하선에 미치는 영향에 관한 병리조직학적 연구)

  • Hung-Mo Kim;Jung-Pyo Hong
    • Journal of Oral Medicine and Pain
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    • v.19 no.1
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    • pp.45-55
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    • 1994
  • The purpose of this study was to observe the microscopic change of salivary gland tissues, which is the cause of xerostomia in diabetic condition: for this target the author injected STZ 0.1ml/100gm b.w. on rat to produce diabetes, and than observed microscopic change in submandibular gland through the histopathologic method, obtaining as follows : 1. All of the experimental specimens suffered diabetes after injection of STZ, but the blood glucose level was irregular. 2. There were not interrelationship between the blood glucose level and microscopic change on salivary gland tissues. 3. The salivary gland changed after diabetes initiation in lapse of times; after 14 days,suffered severe destruction, however after 17 days, it was regenerated. 4. Salivary glands showed congested, destructive acini cells, and hyperplastic ductal cells as well as salivary gland duct-like structures. 5. Then were accumulation of fat granules within the cytoplasm of the acini cells on mucous gland in diabetic condition. 6. According to insulin injection, there were no more changes on salivary gland tissues, even in the accumulation of fat granules. 7. Histological changes of the serous gland were obvious more than the mucous gland in this experimental condition.

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Simulation of Channel Dimension Dependent Conduction and Charge Distribution Characteristics of Silicon Nanowire Transistors using a Quantum Model (양자효과를 고려한 실리콘 나노선 트랜지스터의 채널 크기에 따른 전도 및 전하분포 특성 시뮬레이션)

  • Hwang, Min-Young;Choi, Chang-Yong;Moon, Kyoung-Sook;Koo, Sang-Mo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.9
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    • pp.728-731
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    • 2009
  • We report numerical simulations to investigate of the dependendce of the on/off current ratio and channel charge distributions in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width and thicknesses. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L of $10\;{\mu}m$, but varying the channel width W from 5 nm to $5\;{\mu}m$, and thickness t from 10 nm to 30 nm. We have show that $Q_{ON}/Q_{OFF}$ drastically decreases (from $^{\sim}2.9{\times}10^4$ to $^{\sim}9.8{\times}10^3$) as the channel thickness increases (from 10 nm to 30 nm). As a result of the simulation using a quantum model, even higher charge density in the bottom of SiNW channel was observed then in the bottom of control channel.

Properties of Compressive Strength of Mortar Based on High-activated Blast Furnace Slag and Possibility of Concrete Secondary Products (고활성 고로슬래그 미분말 모르타르의 압축강도 발현 특성 및 콘크리트 2차 제품용 결합재 활용 가능성 검토)

  • Lim, Jae-Hyun;Kim, Gyu-Yong;Koo, Kyung-Mo;Kim, Hong-Seop;Yoon, Min-Ho;Lee, Bo-Kyeong
    • Proceedings of the Korean Institute of Building Construction Conference
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    • 2013.11a
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    • pp.66-67
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    • 2013
  • Replacing a large amount of ground granulated blast furnace slag is limited because early age strength is low due to latent hydraulic property despite excellence of long-term strength. This study aimed to examine produceableness of high-activated ground granulated blast furnace slag using slag by-product from steel process. As experimental variable, the properties of strength development were analyzed by setting fineness and replacement ratio of slag by-product, curing conditions, and W/B. The results of study showed that high-activated ground granulated blast furnace slag using slag by-product as an activator improve the compressive strength of mortar. It is expected to be used as binder for secondary product of concrete considering curing and mixing conditions because high-activated ground granulated blast furnace slag can be hydrated by itself.

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Droop Control Method for Circulating Current Reduction in Parallel Operation of BESS (BESS의 병렬운전 시 발생되는 순환 전류 저감을 위한 드룹 제어 기법)

  • Sin, Eun-Suk;Kim, Hyun-Jun;Yang, Won-Mo;Han, Byung-Moon
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.64 no.5
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    • pp.708-717
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    • 2015
  • This paper proposes a new reduction scheme of circulating current when two units of BESS (Battery Energy Storage System) are operated in parallel with conventional droop control. In case of using conventional droop, the terminal voltage of each BESS are not equal due to the unequal line impedance, which causes the circulating current. The operation performance of BESS is critically dependant on the circulating current because it increases system losses which causes the increasement of required system rating. This paper introduces a new reduction scheme of circulating current in which the terminal voltage difference of each BESS is compensated by adding feed-forward path of line voltage drop to the droop control. The feasibility of proposed scheme was first verified by computer simulations with PSCAD/EMTDC software. After then a hardware prototype with 5kW rating was built in the lab and many experiments were carried out. The experimental results were compared with the simulation results to confirm the feasibility of proposed scheme. Two parallel operating BESS with proposed scheme shows more accurate performance to suppress the circulating current than those with the conventional droop control.

A Study on Characteristics of Unsteady Laminar Flows in Squaresectional $180^{\circ}$ Curved Duct (정사각단면 $180^{\circ}$ 곡관덕트의 입구영역에서 비정상층류유동의 유동특성에 관한 연구)

  • Park, G.M.;Mo, Y.W.;Cho, B.K.
    • Journal of Biomedical Engineering Research
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    • v.17 no.4
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    • pp.515-524
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    • 1996
  • The flow characteristics of developing unsteady laminar flow in a square-sectional $180^{\circ}$ curved duct are experimentally investigated by using laser doppler velocimerty (LDV) system with data acquisition and processing system of rotating machinery resolver(RMR) and PHASE software. The major flow characteristics of developing laminar pulsating flows are presented by mean velocity profilel velocity distribution of secondary flow, wall shear stress distributions, entrance lengths according to dimensionless angular frequency($\omega^+$), velocity amplitude ratio($A^1$), and time-averaged Dean number($De_ta$). The velocity profiles and wall shear stress distribution of laminar pulsating flow with dimensionlessangular frequency show the flow characteristics of the quasi-steady laminar flow in a curved duct. The developing region of laminar pulsatile flows in a square-sectional $180^{\circ}$ curved duct is extended to the curved duct angle of approximately $120^{\circ}$ under the present experimental condition.

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Review on TNT Disposal (TNT 처리에 관한 연구동향)

  • Park, Jae Hyun;Shin, Won Mo;Lee, Jae W.
    • Journal of the Korea Institute of Military Science and Technology
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    • v.19 no.1
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    • pp.127-143
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    • 2016
  • Over the decades, TNT has been produced indiscriminately to be utilized in many fields owing to its ability to manipulate the explosion. Yet, the proper technique for disposal of TNT and the waste residues had not been developed so that the large amount of TNT waste was being piled up. Upon the agreement to demilitarization of old weapon, a study on the disposal methods for TNT and the waste treatment have been raised for their dangerous nature. Since then, from burying in landfill to utilizing supercritical fluid-based oxidation, a lot of research is actively ongoing, but little progress has been made in Korea compared to developed countries. This review paper covers all the technologies developed for TNT and its waste disposal including the concept, advantage, and disadvantage of those technologies. Also, suggested here are the future research directions.

RF High Power Amplifier Module using AlN Substrate (AlN 기판을 이용한 RF 고전력 증폭기 모듈)

  • Kim, Seung-Yong;Nam, Choong-Mo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.10
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    • pp.826-831
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    • 2009
  • In this paper, a high power RF amplifier module using AlN substrate of high thermal conductivity has been proposed. This RF amplifier module has the advantage of compact size and effective heat dissipation for the packaging of high power chip. To fabricate the thru-hole and scribing line on AlN substrate, the key parameters of $CO_2$ laser were experimented. And then, microstrip lines and spiral planar inductors were fabricated on an AlN substrate using the thin-film process. The fabricated microstrip lines on the AlN substrate has an attenuation value of 0.1 dB/mm up to 10 GHz. The fabricated spiral planar inductor has a high quality factor, a maximum of about 62 at 1 GHz for a 5.65 nH inductor. Packaging of a RF power amplifier was implemented on an AlN substrate with thru-hole. From the measured results, the gain is 24 dB from 13 to 15 GHz and the output power is 33.65 dBm(2.3 W).