• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1986.04a
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• pp.206-210
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• 1986

Double Ion Implantation methods are used to improve the stiffness os carrier profiles, and then the analytical solutions to Poisson`s equation are derived with summation of each carrier profile. Numerical analyses are done using profer boudary conditions and the results show that the improvement of voltage-dependent-capacitance ratio (C(!)/C(25)) is obtained up to B.6. The third ion implantation is for the enhancement of the Schottky barrier height.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.305-310
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• 2008

Deep trench etching of silicon was investigated as a function of RF source power, DC bias voltage, $C_4F_8$ gas flow rate, and $O_2$ gas addition. On increasing the RF source power from 300 W to 700 W, the etch rate was increased from $3.52{\mu}m/min$ to $7.07{\mu}m/min$. The addition of $O_2$ gas improved the etch rate and the selectivity. The highest etch rate is achieved at the $O_2$ gas addition of 12 %, The selectivity to PR was 65.75 with $O_2$ gas addition of 24 %. At DC bias voltage of -40 V and $C_4F_8$ gas flow rate of 30 seem, We were able to achieve etch rate as high as $5.25{\mu}m/min$ with good etch profile.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.13 no.3
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• pp.48-55
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• 1999

Ths paper presents an optimization method which determines locations and size of capacitors simultaneously while minimizing power losses and improving voltage profile in radial distribution systems. Especially, the cost function associated with capacitor pla.cerrent is considered as step function due to banks of standard discrete capacities. Genetic algorithms(GA) are used to obtain efficiently the solution of the cost function associated with capacitors which is non-continuous and non-differentiable function. The strings in GA consist of the node nwnber index and size of capacitors to be installed. The length mutation operator, which is able to change the length of strings in each generation, is used. The proposed Jrethod which determines locations and size of capacitors simultaneously can reduce power losses and improve voltage proftle with capacitors of minimum size. Its efficiency is proved through the arolication in radial distribution systems.ystems.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.223-226
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• 2003

We propose an improvement method for a $\underline{G}ate$ $\underline{OX}ide(GOX)$ thinning at the edge of $\underline{S}hallow$ $\underline{T}rench$ $\underline{I}solation(STI)$, when STI is adopted to Dual Gate Oxide(DGOX) Process. In the case of SOC(System On-a-Chip), the DGOX process is usually used for realizing both a low and a high voltage parts in one chip. However, it is found that the severe GOX thinning occurs from at STI top edge region and a dent profile exists at the top edge of STI, when conventional DGOX and STI process carried out in high density device chip. In order to overcome this problem, a new DGOX process is tried in this study. And we are able to prevent the GOX thinning by H2 anneal, partially SiN liner skip, and a method which is merged a thick sidewall oxide(S/O) with a SiN pull-back process. Therefore, a good subthreshold characteristics without a double hump is obtained by the prevention of a GOX thinning and a deep dent profile.

• Proceedings of the KIEE Conference
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• 1999.07f
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• pp.2616-2619
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• 1999

The Backlight inverter used in the laptop computer is designed in this study. It has been difficult for electromagnetic transformer to enhance the efficiency and compact profile. In this study, (l) the piezoelectric transformer(PT) is used for reducing the loss: (2) the volume of core and winding coil are used in electromagnetic transformer, and (3) the zero voltage switching(ZVS) is used in the driver of the resonant circuit. The modified PT for this paper and the equivalent circuit are supported by the simulation program. ZVS is achieved by Half-Bridge inverter circuit. The result of the experiment shows more than 91% improvement in terms of the efficiency.

• Transactions on Electrical and Electronic Materials
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• v.18 no.6
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• pp.345-349
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• 2017

Reconfiguration is an important method to minimize power loss and load interruption by creating an optimal configuration of a system. Furthermore, by increasing demand and value of consumption, construction of new power plants can be postponed in networks by reconfiguration and proper arrangement of linkage switches. This method is feasible for radial networks, which create meshes of linkage switches. One convenient way to achieve a system with minimal power loss and interruption is to utilize capacitors. Optimal placement and sizing of capacitors in such applications is an important issue in the literature. In this paper, cat swarm optimization is introduced as a new metaheuristic algorithm to achieve this purpose. Simulation has been carried out in two feasible networks, 69-bus and 33-bus systems.

• Journal of Electrical Engineering and Technology
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• v.9 no.1
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• pp.45-51
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• 2014

Distribution system is a critical link between customer and utility. The control of power loss is the main factor which decides the performance of the distribution system. There are two methods such as (i) distribution system reconfiguration and (ii) inclusion of capacitor banks, used for controlling the real power loss. Considering the improvement in voltage profile with the power loss reduction, later method produces better performance than former method. This paper presents an advanced evolutionary algorithm for capacitor inclusion for loss reduction. The conventional sensitivity analysis is used to find the optimal location for the capacitors. In order to achieve a better approximation for the current candidate solution, Opposition based Differential Evolution (ODE) is introduced. The effectiveness of the proposed technique is validated through 10, 33, 34 and85-bus radial distribution systems.

• Transactions of the KSME C: Technology and Education
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• v.3 no.3
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• pp.175-181
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• 2015

Because internal space of combat vehicle reachs about $80^{\circ}C$ at high temperature period, Proximity Sensor exposed high temperature and humidity, which has function to sense the distance and transfer signal for control unit, have enlarged sensing distance and finally locked on. Malfunction of sensing itself occur frequently, therefore we carried out cause analysis and improvement. We accomplish improvement activity secondly. Through-out many trial and error, we find out that malfunction of sensor occur at high temperature circumstance. To improve, the another Emitter Coil is added to increase voltage difference and improve sensing accuracy about 5~10 times. And we accomplish design improvement to dull temperature and humity change after increasing molding surface to add vibration and shock resistance. We prove that the improved product do not fail after enduring 136hr at $85^{\circ}C$ temperature and 85% relative humidity circumstance chamber.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.4
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• pp.284-288
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• 2013

Power MOSFETs(Metal Oxide Semiconductor Field Effect Transistor) operate as energy control semiconductor switches. In order to reduce energy loss of the device during switch-on state, it is essential to increase its conductance. We have experimental results and explanations on the doping profile dependence of the electrical behavior of the vertical MOSFET. The device is fabricated as $8.25{\mu}m$ cell pitch and $4.25{\mu}m$ gate width. The performances of device with various p base doping concentration are compared at Vth from 1.77 V to 4.13 V. Also the effect of the cell structure on the on-resistance and breakdown voltage of the device are analyzed. The simulation results suggest that the device optimized for various applications can be further optimized at power device.

• Proceedings of the KIEE Conference
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• 2000.11a
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• pp.180-183
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• 2000

The Battery Energy Storage System(BESS) has lots of advantages such as load levelling, quick response emergency power(spinning reserve), frequency and voltage control, improvement of reliability, and deferred generation and transmission construction. The economic feasibility requires justification from the customer side of meter to promoting the dissemination of BESS nationally. In this paper, we proposed the economic assessment model of customer owned Battery Energy Storage System(BESS) which is complemented and improved the existing model. The proposed model is applied to the typical customer type(light-industrial commercial, and residential) which are taken from the statistical analysis on the load profile survey of Korea Electric Power COmpany (KEPCO). The economic assessment performed for each customer type to justifying their economic feasibility of BESS installation from the economic measures such as payback period, overall benefits, ROI, and ROR. The results of this paper are useful to the customer investment decision making and the national energy policy & strategy.