Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Improvement of Etch Rate and Profile by SF6, C4F8, O2 Gas Modulation

SF6, C4F8, O2 가스 변화에 따른 실리콘 식각율과 식각 형태 개선

  • 권순일 (충주대학교 전자공학과) ;
  • 양계준 (충주대학교 전자공학과) ;
  • 송우창 (충주대학교 BINT 신기술 연구소) ;
  • 임동건 (충주대학교 전자공학과)
  • Published : 2008.04.01
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Abstract

Deep trench etching of silicon was investigated as a function of RF source power, DC bias voltage, $C_4F_8$ gas flow rate, and $O_2$ gas addition. On increasing the RF source power from 300 W to 700 W, the etch rate was increased from $3.52{\mu}m/min$ to $7.07{\mu}m/min$. The addition of $O_2$ gas improved the etch rate and the selectivity. The highest etch rate is achieved at the $O_2$ gas addition of 12 %, The selectivity to PR was 65.75 with $O_2$ gas addition of 24 %. At DC bias voltage of -40 V and $C_4F_8$ gas flow rate of 30 seem, We were able to achieve etch rate as high as $5.25{\mu}m/min$ with good etch profile.

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References

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