• Title/Summary/Keyword: Voltage Modulation

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The Characteristics Analysis and Design of High-Frequency Isolated Type ZVZCS PS-PWM DC-DC Converter with Fuel Cell Generation System (연료전지 발전시스템에 적용된 고주파 절연형 ZVZCS PS-PWM DC-DC 컨버터의 설계 및 특성 해석)

  • Suh, Ki-Young;Mun, Sang-Pil;Kim, Dong-Hun;Lee, Hyun-Woo;Kwon, Soon-Kurl
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.20 no.4
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    • pp.21-28
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    • 2006
  • In this paper, the proposed full-bridge high frequency isolated zoo voltage and zero current switching phase shifted pulse width modulation(ZVZCS PS-PWM)DC-DC converter among fuel cell generation system consist of 1.2[kW] fuel cell of Nexa Power Module, full-bridge DC-DC converter to boost the fuel cell low voltage($28{\sim}43[%]$) to 380[VDC] and a single phase full-bridge inverter is implemented to produce AC output(220[VAC], 60[Hz]). A tapped inductor filter with freewheeling diode is newly implemented in the output filter of the proposed full-bridge high frequency isolated ZVZCS PS-PWM DC-DC converter to suppress circulating current under the wide output voltage regulation range, thus to eliminate the switching and transformer turn-on/off over-short voltage or transient phenomena. Besides the efficiency of $93{\sim}97[%]$ is obtained over the wide output voltage regulation ranges and load variations.

High Voltage β-Ga2O3 Power Metal-Oxide-Semiconductor Field-Effect Transistors (고전압 β-산화갈륨(β-Ga2O3) 전력 MOSFETs)

  • Mun, Jae-Kyoung;Cho, Kyujun;Chang, Woojin;Lee, Hyungseok;Bae, Sungbum;Kim, Jeongjin;Sung, Hokun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.32 no.3
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    • pp.201-206
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    • 2019
  • This report constitutes the first demonstration in Korea of single-crystal lateral gallium oxide ($Ga_2O_3$) as a metal-oxide-semiconductor field-effect-transistor (MOSFET), with a breakdown voltage in excess of 480 V. A Si-doped channel layer was grown on a Fe-doped semi-insulating ${\beta}-Ga_2O_3$ (010) substrate by molecular beam epitaxy. The single-crystal substrate was grown by the edge-defined film-fed growth method and wafered to a size of $10{\times}15mm^2$. Although we fabricated several types of power devices using the same process, we only report the characterization of a finger-type MOSFET with a gate length ($L_g$) of $2{\mu}m$ and a gate-drain spacing ($L_{gd}$) of $5{\mu}m$. The MOSFET showed a favorable drain current modulation according to the gate voltage swing. A complete drain current pinch-off feature was also obtained for $V_{gs}<-6V$, and the three-terminal off-state breakdown voltage was over 482 V in a $L_{gd}=5{\mu}m$ device measured in Fluorinert ambient at $V_{gs}=-10V$. A low drain leakage current of 4.7 nA at the off-state led to a high on/off drain current ratio of approximately $5.3{\times}10^5$. These device characteristics indicate the promising potential of $Ga_2O_3$-based electrical devices for next-generation high-power device applications, such as electrical autonomous vehicles, railroads, photovoltaics, renewable energy, and industry.

Electrooptic Modulator with InAs Quantum Dots (InAs/InGaAs 양자점을 이용한 전계광학변조기)

  • Ok, Seong-Hae;Moon, Yon-Tae;Choi, Young-Wan;Son, Chang-Wan;Lee, Seok;Woo, Deok-Ha;Byun, Young-Tae;Jhon, Young-Min;Kim, Sun-Ho;Yi, Jong-Chang;Oh, Jae-Eung
    • Korean Journal of Optics and Photonics
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    • v.17 no.3
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    • pp.278-284
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    • 2006
  • We have fabricated and measured electrooptic modulator using coupled stack InAs/InGaAs quantum dots. The height of the quantum dot is 16 nm and quantum dots are stacked including an InGaAs capping layer. The peak wavelength of photoluminescence is 1260 nm at room temperature and 1158 nm at 12 K. The operation characteristics of the quantum dots show high modulation efficiency of electrooptic modulator at 1550 nm compared to that of existing III-V bulk and MQW type semiconductor. The measured switching voltage ($V\pi$) is 540 and 600 mV, for TE mode and TM mode, respectively. From the results, the modulation efficiency can be determined as 333.3 and $300^{\circ}/V{\cdot}mm$ for TE and TM modes. The results reported here may lead to the design and fabrication of a novel electrooptic modulator with low switching voltage and high efficiency.

Design and output control technique of sonar transmitter considering impedance variation of underwater acoustic transducer (수중 음향 트랜스듀서의 임피던스 변화를 고려한 소나 송신기의 설계 및 출력 제어 기법)

  • Shin, Chang-Hyun;Lee, Yoon-Ho;Ahn, Byoung-Sun;Yoon, Hong-Woo;Kwon, Byung-Jin;Kim, Kyung-Seop;Lee, Jeong-Min
    • The Journal of the Acoustical Society of Korea
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    • v.41 no.5
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    • pp.481-491
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    • 2022
  • The active sonar transmission system consists of a transmitter that outputs an electrical signal and an underwater acoustic transducer that converts the amplified electrical signal into an acoustic signal. In general, the transmitter output characteristics are dependent on load impedance, and an underwater acoustic transducer, which is a transmitter load, has a characteristic that the electrical impedance varies largely according to frequency when driven. In such a variable impedance condition, the output of the active sonar transmission system may become unstable. Hence, this paper proposes a design and control technique of a sonar transmitter for transmitting a stable transmission signal even under variable impedance conditions of an underwater acoustic transducer in an active sonar transmission system. The electrical impedance characteristics of the underwater acoustic transducer are experimentally analyzed, and the sonar transmitter is composed of a single-phase full-bridge inverter, an LC filter, and a matching circuit. In this paper, the design and output control method of the sonar transmitter is proposed to protect the transmitter and transducer. It can secure stable output voltage characteristics even if it transmits the Linear Frequency Modulation (LFM) signal. The validity is verified through the simulation and the experiment.

A Study on the Mobile Communication System for the Ultra High Speed Communication Network (초고속 정보통신망을 위한 이동수신 시스템에 관한 연구)

  • Kim, Kab-Ki;Moon, Myung-Ho;Shin, Dong-Hun;Lee, Jong-Arc
    • Journal of IKEEE
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    • v.2 no.1 s.2
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    • pp.1-14
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    • 1998
  • In this paper, Antenna, LNA, Mixer, VCO, and Modulation/Demodulation in Baseband processor which are the RF main components in Wireless LAN system for ultra high-speed communications network are studied. Antenna bandwidth and selective fading due to multipath can be major obstacles in high speed digital communications. To solve this problem, wide band MSA which has loop-structure magnetic antenna characteristics is designed. Distributed mixer using dual-gate GaAs MESFET can achieve over 10dB LO/RF isolation without hybrid, and minimize circuit size. As linear mixing signal is produced, distortions can be decreased at baseband signals. Conversion gain is achieved by mixing and amplification simultaneously. Mixer is designed to have wide band characteristics using distributed amplifier. In VCO design, Oscillator design method by large signal analysis is used to produce stable signal. Modulation/Demodulation system in baseband processor, DS/SS technique which is robust against noise and interference is used to eliminate the effect of multipath propagation. DQPSK modulation technique with M-sequences for wideband PN spreading signals is adopted because of BER characteristic and high speed digital signal transmission.

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An analysis on Flicker Phenomenon of a Fluorescent lights for the commercial operating EMU (영업운행 전동차 객실형광등의 플리커(Flicker) 현상에 관한 분석 연구)

  • Ha, Jong-Eun;Han, Seon-Ho;Park, Jae-Hong;Lee, Dae-Won
    • Proceedings of the KSR Conference
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    • 2006.11b
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    • pp.1240-1246
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    • 2006
  • Generally, there are two types of main factors to affect output power quality of a auxiliary power supply an EMU(electric multiple unit). One is a voltage flicker by amplitude modulation of short time and air compressors. The other is repetitive motion of large capacity motor such as air compressors, HVAC unit etc. in main factors. This paper compared two kinds of fluorescent lamp, 32W (after remodeling interior) and 40W(before remodeling interior) and measured the light output varying input power(AC220V) for a flicker phenomenon related power supply of lamps in EMU. Also, we analyzed a flicker considering EMU operating time and density in order to grasp main factors of a load change to cause a voltage change. As a results of test, a 40W fluorescent lamp was more insensitive with 20.26% degree an eye recognition degree sides about changes of the input power and lower with 19.9% voltage side generating flicker compare with fluorescent lamp 32W. Also, we confirmed the fact which the fluorescent lamp flicker was generated by varying fluorescent lamp output voltage when the commercial EMU was in high driving density and at the busy time. Additionally, we confirmed the frequency band which an EMU passenger could feel sensitively blinking of a fluorescent lamp was visually $8Hz{\sim}15Hz$.

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Design of a CCM/DCM dual mode DC-DC Buck Converter with Capacitor Multiplier (커패시터 멀티플라이어를 갖는 CCM/DCM 이중모드 DC-DC 벅 컨버터의 설계)

  • Choi, Jin-Woong;Song, Han-Jung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.17 no.9
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    • pp.21-26
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    • 2016
  • This paper presents a step-down DC-DC buck converter with a CCM/DCM dual-mode function for the internal power stage of portable electronic device. The proposed converter that is operated with a high frequency of 1 MHz consists of a power stage and a control block. The power stage has a power MOS transistor, inductor, capacitor, and feedback resistors for the control loop. The control part has a pulse width modulation (PWM) block, error amplifier, ramp generator, and oscillator. In this paper, an external capacitor for compensation has been replaced with a multiplier equivalent CMOS circuit for area reduction of integrated circuits. In addition, the circuit includes protection block, such as over voltage protection (OVP), under voltage lock out (UVLO), and thermal shutdown (TSD) block. The proposed circuit was designed and verified using a $0.18{\mu}m$ CMOS process parameter by Cadence Spectra circuit design program. The SPICE simulation results showed a peak efficiency of 94.8 %, a ripple voltage of 3.29 mV ripple, and a 1.8 V output voltage with supply voltages ranging from 2.7 to 3.3 V.

The Broadband Auto Frequency Channel Selection of the Digital TV Tuner using Frequency Mapping Function (주파수 매핑 함수를 이용한 광대역 주파수 자동 채널 선택용 디지털 TV 튜너)

  • 정영준;김재영;최재익;박재홍
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.25 no.4B
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    • pp.613-623
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    • 2000
  • Digital TV tuner for 8-VSB modulation was developed with satisfying the requirements of ATSC. The double frequency conversion and the active tracking filter in the front-end were used to reduce interference of the adjacent channels and multi-channels, which suppress If beat and image band. However, it was impossible to get frequency mapping between tracking filter and first VCO(Voltage Controlled Oscillator) in the double conversion digital TV tuner differing from conventional NTSC tuner. This paper, therefore, suggests the available structure and a new method for automatic frequency selection by obtaining the mapping of frequency characteristic over tracking voltage and the combined hardware which compose of Micro-controller, EEPROM, D/A(Digital-to-Analog Converter), OP amp and switch driver to solve above problems.

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A Study on the Leading Phase Operation of Single Phase PWM Converter Train (단상PWM컨버터 차량의 진상운전에 관한 연구)

  • Kim, Baik
    • Journal of the Korean Society for Railway
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    • v.15 no.4
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    • pp.357-363
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    • 2012
  • This paper presents a new operation method for the single phase PWM(Pulse Width Modulation) converter train. Recently, the trains adopting the PWM converter have become the majority in the electric locomotives since there are distinct advantages over the predecessors, which can be operated at near unity power factor. However, a slight modification of the control scheme makes this kind of vehicles run in the region of leading power factor. Although this feature seems to be of no significant use by itself, the leading phase operation can improve the voltage profile and the line loss of the feeding systems is decreased by compensating the reactive power loss along the line when it considered together with the feeding systems. This method is even more economical and efficient comparing with the installation of SVC that is mainly used for this purpose since the train can become a movable compensator. With the conditions and some essential formula for the leading phase operation, a new power factor control algorithm has been proposed to implement this scheme. The results of simulation through SIMULINK model show that the proposed method is suitable enough for practical use.

Electrical Characteristics of Triple-Gate RSO Power MOSFET (TGRMOS) with Various Gate Configurations and Bias Conditions

  • Na, Kyoung Il;Won, Jongil;Koo, Jin-Gun;Kim, Sang Gi;Kim, Jongdae;Yang, Yil Suk;Lee, Jin Ho
    • ETRI Journal
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    • v.35 no.3
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    • pp.425-430
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    • 2013
  • In this paper, we propose a triple-gate trench power MOSFET (TGRMOS) that is made through a modified RESURF stepped oxide (RSO) process, that is, the nitride_RSO process. The electrical characteristics of TGRMOSs, such as the blocking voltage ($BV_{DS}$) and on-state current ($I_{D,MAX}$), are strongly dependent on the gate configuration and its bias condition. In the nitride_RSO process, the thick single insulation layer ($SiO_2$) of a conventional RSO power MOSFET is changed to a multilayered insulator ($SiO_2/SiN_x/TEOS$). The inserted $SiN_x$ layer can create the selective etching of the TEOS layer between the gate oxide and poly-Si layers. After additional oxidation and the poly-Si filling processes, the gates are automatically separated into three parts. Moreover, to confirm the variation in the electrical properties of TGRMOSs, such as $BV_{DS}$ and $I_{D,MAX}$, simulation studies are performed on the function of the gate configurations and their bias conditions. $BV_{DS}$ and $I_{D,MAX}$ are controlled from 87 V to 152 V and from 0.14 mA to 0.24 mA at a 15-V gate voltage. This $I_{D,MAX}$ variation indicates the specific on-resistance modulation.