• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
• /
• pp.122-122
• /
• 2008

Recently, Metal/Alumina/Silicon-Nitride/Silicon-Oxide/Silicon (MANOS) structures are one of the most attractive candidates to realize vertical scaling of high-density NAND flash memory [1]. However, as ANO layers are miniaturized, negative and positive bias temperature instability (NBTI/PBTI), such as the flat band voltage shift, ${\Delta}V_{FB}$, the interfacial trap density increase, ${\Delta}D_{it}$, the gate leakage current, ${\Delta}I_G$. and the retention characteristics, in MONOS capacitors, becomes an important issue in terms of reliability. It is well known that tunnel oxide degradation is a result of the oxide and interfacial traps generation during FN (Fowler-Nordheim) stress [2]. Because the bias temperature stress causes an increase of both interfacial-traps and fixed oxide charge could be a factor, witch can degrade device reliability during the program and erase operation. However, few studies on NBTI/PBTI have been conducted on improving the reliability of MONOS devices. In this work, we investigate the effect of post-annealing gas on bias temperature instability (BTI), such as the flat band voltage shift, ${\Delta}V_{FB}$, the interfacial trap density shift, ${\Delta}I_G$ retention characteristics, and the gate leakage current characteristics of MANOS capacitors. MANOS samples annealed at $950^{\circ}C$ for 30 s by a rapid thermal process were treated via additional annealing in a furnace, using annealing gases $N_2$ and $N_2-H_2$ (2 % hydrogen and 98 % nitrogen mixture gases) at $450^{\circ}C$ for 30 min. MANOS samples annealed in $N_2-H_2$ ambient had the lowest flat band voltage shift, ${\Delta}V_{FB}$ = 1.09/0.63 V at the program/erase state, and the good retention characteristics, 123/84 mV/decade at the program/erase state more than the sample annealed at $N_2$ ambient.

• 제어로봇시스템학회논문지
• /
• 제13권5호
• /
• pp.399-405
• /
• 2007

This paper deals with the controller for a stable walking of a humanoid robot using genetic algorithm. A humanoid robot has instability during walking because it isn't fixed on the ground, and its nonlinearities of the joints increase its instability. If controller isn't robust, the robot may fall down at the ground during walking because of its nonlinearities. To solve this problem, robust controller is required to reduce the effect of nonlinearities and to gain the good tracking performance. In this paper, motion controller that is based on fuzzy-sliding mode controller is proposed. This controller can remove the effect of the saturation by limitation of the input voltage. It also includes compensator for reducing the effect of the nonlinearity by backlash and PI controller improving the tracking performance. In here, genetic algorithm is used for searching the optimal gains of the controller. From the given controller, a humanoid robot can moved more preciously. All the processes are investigated through simulations and are verified experimentally in a real joint system for a humanoid robot.

• 정보과학회 논문지
• /
• 제44권6호
• /
• pp.601-606
• /
• 2017

최근 드론 산업의 발전으로 일상생활 중에서도 드론을 비행하는 모습을 자주 관찰할 수 있다. 이러한 드론에 주로 사용되는 리튬폴리머 배터리는 사용 시간이 흐름에 따라 배터리의 전압 강하가 일어나 동일한 드론 조종 신호에도 드론 모터의 속도가 불안정해지는 문제점이 발생한다. 드론 모터 속도의 불안정은 고도 유지를 불가능하게 하여 드론 기체가 상승과 하강을 반복하게 된다. 이러한 문제를 해결하기 위해서 기존의 방법은 배터리 방전에 따른 보상기를 추가하거나 시스템 제어 모델을 변경하였다. 하지만 이러한 기법은 하드웨어로 구현된 모듈을 사용하거나 모터 종류 및 실험 결과에 종속적으로 구현되기 때문에 드론 기체에 사용되는 모터에 맞게 새로운 모듈이 구현되어야하는 문제점이 있다. 따라서 본 논문에서는 이러한 문제를 해결하기 위해 드론의 펌웨어에 배터리 전압 강하를 고려하는 모터 속도 제어기를 구현하여 드론의 비행 안정성을 확보한다.

• 정보통신설비학회논문지
• /
• 제9권4호
• /
• pp.141-146
• /
• 2010

In this paper, bandgap reference PTAT(Proportional to Absolute Temperature) circuit and flexible gain control of LNA(Low Noise Amplifier) which is usable in Zigbee system of 2.4GHz band are designed by TSMC $0.18{\mu}m$ CMOS library. PTAT bandgap reference circuit is proposed to minimize the instability of CMOS circuit which may be unstable in temperature changes. This circuit is designed such that output voltage remains within 1.3V even when the temperature varies from $-40^{\circ}C$ to $-50^{\circ}C$ when applied to the gate bias voltage of LNA. In addition, the LNA is designed to be operated on 2.4GHz which is applicable to Zigbee system and able to select gains by changing output impedance using 4 NMOS operated switches. The simulation result shows that achieved gain is 14.3~17.6dB and NF (Noise Figure) 1.008~1.032dB.

• 전기학회논문지
• /
• 제56권10호
• /
• pp.1715-1720
• /
• 2007

The CSC-based HVDC system links the Jeju system to the mainland system. Because CSC-based HVDC is installed in Jeju, the reactive power is needed to transfer active power through the HVDC. In order to supply reactive power, switched capacitors and synchronous condensers are installed in Jeju system. The deterioration of established synchronous condensers, however, causes a reactive power supply capability decline and high maintenance cost. It brings about the instability of Jeju system and the incremental of maintenance and repair costs. In the future the installation of wind generators and additional HVDC system would aggravate the stability of Jeju system. Therefore, it needs to consider a countermeasure against above problems. In this paper, Analysis of several contingencies of Jeju system was peformed, and some contingencies caused voltage-reactive power problem was known. CPF method was introduced in order to make countermeasures to replace the synchronous condensers and to solve the voltage-reactive power problem. The location and capacity of reactive power sources were also decided. It could guarantee medium and long term stability of Jeju system.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.351.1-351.1
• /
• 2014

In this study, we prepared the solution-based In-Ga-Zn oxide thin film transistors (IGZO TFTs) of multistacked active layer and characterized the gate bias instability by measuring the change in threshold voltage caused by stacking. The solutions for IGZO active layer were prepared by In:Zn=1:1 mole ratio and the ratio of Ga was changed from 20% to 30%. The TFTs with multistacked active layer was fabricated by stacking single, double and triple layers from the prepared solutions. As the number of active layer increases, the saturation mobility shows the value of 1.2, 0.8 and 0.6 (). The electrical properties have the tendency such as decreasing. However when gate bias VG=10 V is forced to gate electrode for 3000 s, the threshold voltage shift was decreased from 4.74 V to 1.27 V. Because the interface is formed between the each layers and this affected the current path to reduce the electrical performances. But the uniformity of active layer was improved by stacking active layer with filling the hole formed during pre-baking so the stability of device was improved. These results suggest that the deposition of multistacked active layer improve the stability of the device.

• 한국산업정보학회논문지
• /
• 제18권6호
• /
• pp.25-30
• /
• 2013

나노크기 MOSFET 공정에서 회로의 신뢰도에 영향을 미치는 음 바이어스 온도 불안정성(NBTI), 핫 캐리어 주입(HCI), 시간 의존 유전체 파손(TDDB) 등과 같은 노화 현상들에 의해서 회로 성능의 심각한 저하를 가져올 수 있다. 그러므로, 본 논문에서는 디지털회로에서 발생할 수 있는 노화를 극복할 수 있는 적응형 보상 회로를 제안하고자 한다. 제안된 보상회로는 노화에 의해 감소하는 회로 성능을 적응적으로 보상해 주기 위해서 노화 정도에 따라 파워스위치 폭을 조절할 수 있고, 순방향 바디 바이어싱 전압을 걸어줄 수 있는 파워 게이팅 구조를 사용하여서 45nm의 공정기술에서 설계되었다.

• Journal of Power Electronics
• /
• 제18권6호
• /
• pp.1780-1790
• /
• 2018

Voltage feed-forward control (VFFC) is widely used in LCL-type grid-tied inverters due to its advantages in terms of disturbance rejection performance and fast dynamic response. However, VFFC may worsen the stability of inverters under weak grid conditions. It is revealed in this paper that a large phase-lag in the low-frequency range is introduced by VFFC, which reduces the phase margin significantly and leads to instability. To address this problem, a novel virtual-impedance-based control, where a phase-lead is introduced into the low-frequency area to compensate for the phase lag caused by VFFC, is proposed to improve system stability. The proposed control is realized with a high-pass filter, without high-order-derivative components. It features easy implementation and good noise immunity. A detailed design procedure for the virtual impedance control is presented. Both theoretical analysis and experimental results verify the effectiveness of the control proposed.

• 한국산업융합학회 논문집
• /
• 제21권6호
• /
• pp.361-368
• /
• 2018

This paper proposes a grid - connected CTTS system that can be soft switched to meet the government's effective resource allocation policy for emergency generator. In order to eliminate the system instability caused by the large inrush current generation in the system switching, a new virtual rotation coordinate method for the dissimilar power source is proposed. The proposed virtual rotation coordinate method improves the voltage detection accuracy of the voltage difference of the dissimilar power supply, and it is proved that the synchronous switching characteristic is excellent. In addition, zero current and system stabilization can be achieved by realizing zero current when blocking CTTS with instantaneous reactive power control. Simulation was carried out to verify the validity of the proposed method, and the 500[kVA] system was fabricated and verified to demonstrate the superiority of the proposed method.

• 한국전기전자재료학회논문지
• /
• 제32권5호
• /
• pp.371-375
• /
• 2019

Developing a thin-film transistor with characteristics such as a large area, high mobility, and high reliability are key elements required for the next generation on displays. In this paper, we have investigated the research trends related to improving the reliability of oxide-semiconductor-based thin-film transistors, which are the primary focus of study in the field of optical displays. It has been reported that thermal treatment in a high-pressure oxygen atmosphere reduces the threshold voltage shift from -7.1 V to -1.9 V under NBIS. Additionally, a device with a $SiO_2/Si_3N_4$ dual-structure has a lower threshold voltage (-0.82 V) under NBIS than a single-gate-insulator-based device (-11.6 V). The dual channel structure with different oxygen partial pressures was also confirmed to have a stable threshold voltage under NBIS. These can be considered for further study to improve the NBIS problem.