Journal of Korea Society of Industrial Information Systems (한국산업정보학회논문지)

Korea Society of Industrial Information Systems (한국산업정보학회)
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Design of a new adaptive circuit to compensate for aging effects of nanometer digital circuits

나노미터 디지털회로의 노화효과를 보상하기위한 새로운 적응형 회로 설계

  • 김경기 (대구대학교 전자전기공학부)
  • Received : 2013.10.02
  • Accepted : 2013.11.29
  • Published : 2013.12.31
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Abstract

In nanoscale MOSFET technology, aging effects such as Negative Bias Temperature Instability(NBTI), Hot carrier Injection(HCI), Time Dependent Dielectric Breakdown (TDDB) and so on which affect circuit reliability can lead to severe degradation of digital circuit performance. Therefore, this paper has proposed the adaptive compensation circuit to overcome the aging effects of digital circuits. The proposed circuit deploys a power gating structure with variable power switch width and variable forward body-biasing voltage in order to adaptively compensate for aging induced performance degradation, and has been designed in 45nm technology.

나노크기 MOSFET 공정에서 회로의 신뢰도에 영향을 미치는 음 바이어스 온도 불안정성(NBTI), 핫 캐리어 주입(HCI), 시간 의존 유전체 파손(TDDB) 등과 같은 노화 현상들에 의해서 회로 성능의 심각한 저하를 가져올 수 있다. 그러므로, 본 논문에서는 디지털회로에서 발생할 수 있는 노화를 극복할 수 있는 적응형 보상 회로를 제안하고자 한다. 제안된 보상회로는 노화에 의해 감소하는 회로 성능을 적응적으로 보상해 주기 위해서 노화 정도에 따라 파워스위치 폭을 조절할 수 있고, 순방향 바디 바이어싱 전압을 걸어줄 수 있는 파워 게이팅 구조를 사용하여서 45nm의 공정기술에서 설계되었다.

Keywords

References

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