• 제목/요약/키워드: Voltage Detector

검색결과 508건 처리시간 0.034초

Feasibility study of SiPM based scintillation detector for dual-energy X-ray absorptiometry

  • Park, Chanwoo;Song, Hankyeol;Joung, Jinhun;Kim, Yongkwon;Kim, Kyu Bom;Chung, Yong Hyun
    • Nuclear Engineering and Technology
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    • 제52권10호
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    • pp.2346-2352
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    • 2020
  • Dual-energy x-ray absorptiometry (DXA) is the noninvasive method to diagnose osteoporosis disease characterized by low bone mass and deterioration of bone tissue. Many global companies and research groups have developed the various DXA detectors using a direct photon-counting detector such as a cadmium zinc telluride (CZT) sensor. However, this approach using CZT sensor has some drawback such as the limitation of scalability by high cost and the loss of efficiency due to the requirement of a thin detector. In this study, a SiPM based DXA system was developed and its performance evaluated experimentally. The DXA detector was composed of a SiPM sensor coupled with a single LYSO scintillation crystal (3 × 3 × 2 ㎣). The prototype DXA detector was mounted on the dedicated front-end circuit consisting of a voltage-sensitive preamplifier, pulse shaping amplifier and constant fraction discriminator (CFD) circuit. The SiPM based DXA detector showed the 34% (at 59 keV) energy resolution with good BMD accuracy. The proposed SiPM based DXA detector showed the performance comparable to the conventional DXA detector based on CZT.

I/Q 오차 보정 회로를 갖는 2.5GHz Quadrature LC VCO 설계 (Design of a 2.5GHz Quadrature LC VCO with an I/Q Mismatch Compensator)

  • 변상진;심재훈
    • 대한전자공학회논문지SD
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    • 제48권2호
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    • pp.35-43
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    • 2011
  • 본 논문에서는 Quadrature LC VCO(Voltage controlled oscillator)의 I/Q 오차를 분석하고, 그 분석된 결과를 이용하여 I/Q 오차 보정 회로를 제안한다. 제안된 I/Q 오차 보정 회로는 높은 주파수 대역폭을 요구하는 위상 오차 검출기를 사용하는 대신에 낮은 주파수 대역폭으로도 동작이 가능한 진폭 오차 검출기를 사용한다. 제안된 I/Q 오차 보정 회로의 검증을 위하여 2.5GHz Quadrature LC VCO가 $0.18{\mu}m$ CMOS 공정으로 제작 및 측정되었다. 측정결과 제안된 진폭 오차 검출기를 사용해도 기존의 위상 오차 검출기는 사용하는 경우들과 유사한 I/Q 오차 보정 성능을 얻을 수 있음을 확인하였다. 본 I/Q 오차 보정 회로는 1.8V 전원 전압에서 0.4mA 전류를 소모하며, 차지하는 칩 면적은 $0.04mm^2$이다.

성능이 향상된 Stack Monitoring System의 설계 (Design of Stack Monitoring System with Improved Performance)

  • 장경욱;이주현;이승원;이승호
    • 전기전자학회논문지
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    • 제20권3호
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    • pp.299-302
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    • 2016
  • 본 논문에서는 성능이 향상된 Stack Monitoring System을 설계한다. Stack Monitoring System의 증폭기(AMP)에 들어오는 펄스성 잡음을 차단하기 위하여, 차폐 및 전원부 임피던스를 낮추고 전원회로를 분리하여 노이즈를 차단한다. 신틸레이션 검출기 특성을 최대한 장치에 매칭하기 위한 가변 고전압, 이득(Gain), 상쇄(Offset), 한계(Threshold) 등을 설정 할 수 있는 제어부를 설계한다. 또한 300 ~ 1,500V의 가변 고전압 전원회로를 구성하여 다양한 신틸레이션 검출기에 적용가능 한 가변 전압 공급 장치를 설계한다. 성능이 향상된 Stack Monitoring System은 다종의 신틸레이션 검출기가 각각의 특성을 고려하여 동작하게 함으로서 효율적이고 높은 신뢰성을 보장한다. 개발된 Stack Monitoring System의 측정 불확도에 대하여 공인 시험기관의 장비를 사용하여 실험한 결과 우수한 성능을 나타내었다.

방폭구조 ESD Detector 개발 및 본질안전 특성 분석에 관한 연구 (A Study on the Development of Explosion Proof ESD Detector and Intrinsic Safety Characteristics Analysis)

  • 변정환;최상원
    • 한국안전학회지
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    • 제35권1호
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    • pp.1-11
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    • 2020
  • Article 325 (Prevention of Fire Explosion due to Electrostatic) of the Rule for Occupational Safety and Health Standard specifies that in order to prevent the risk of disasters caused by static electricity, fire, explosion and static electricity in the production process, However, in order to do this, it is absolutely necessary to use a pre-detection technology and a detector for antistatic discharge prediction, which is a precautionary measure by static electricity in a fire / explosion hazard place, but in Korea, And there is no technical standard for the application of the technology of the explosion proof structure of the related equipment. Research methods include domestic and overseas electrostatic discharge detection technology and literature investigation of related equipment explosion proofing technology, domestic and foreign electrostatic discharge detection device production and use situation investigation, advanced foreign technology data analysis and benchmarking. In particular, we sought to verify the results of empirical experiments using electrostatic discharge detection technology through sample purchase and analysis of related major products, development of optimization technology through prototype production, evaluation, and supplementation, and expert knowledge through expert consultation. The results of this study were developed and fabricated two prototypes of electrostatic discharge detector based on the technology / standard related to electrostatic discharge detection technology in Korea and abroad through development of electrostatic discharge detection technology and development and production of detector. In addition, based on the development of electrostatic discharge detection technology, we developed an intrinsic safety explosion proof ib class explosion proof technology applicable to the process of using and handling flammable gas and flammable liquid vapor and combustible dust. In the case of the over voltage and minimum voltage are supplied to the explosion-proof structure ESD detector, check the state of the circuit and the transient and transient currents generated by the coil and capacitor elements during the input and standby of the signal pulse voltage. Explosion-proof equipment-Part 11: Intrinsically safe explosion proof structure The comparative evaluation with the reference curve in Annex A of "i" confirms that the characteristics of the intrinsically safe explosion protection structure are met.

초전도 전력 시스템의 안정적 전압.전류 제어를 위한 고찰 (The Investigation for the stable control of voltage and current in a superconductor power systems)

  • 김동준;이양주;이창열;이승제
    • 한국초전도저온공학회:학술대회논문집
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    • 한국초전도저온공학회 2003년도 학술대회 논문집
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    • pp.193-195
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    • 2003
  • In superconductor power systems, a quench detector can misrecognize oscillation about current or voltage control as a quench. So, for the correct detection of a quench, it seems need to guarantee a smooth control of current or voltage. In this paper, we have studied a control function and control parameter for smooth control of current or voltage.

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이중 차 전압을 이용한 전압 새그 검출 기법에 관한 연구 (The Study on Detecting Scheme of Voltage Sag using the Two Difference Voltage)

  • 이우철
    • 조명전기설비학회논문지
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    • 제28권12호
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    • pp.65-73
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    • 2014
  • In this paper, the detection scheme of the voltage variation using a two difference voltage is proposed. The conventional sag detector is from a single-phase digital phase-locked loop (DPLL) that is based on a d-q transformation using an all-pass filter (APF). The APF generates a virtual q-axis voltage component with $90^{\circ}$ phase delay but the APF cannot generate the virtual q-axis voltage depending on the phase of the grid voltage. To overcome the problem, q-axis voltage component is generated from difference between the current and previous value of d-axis voltage component in the stationary reference frame. However, the difference voltage around the zero crossing is not enough to detect the voltage sag. Therefore, the new detection scheme using the two difference voltage which can detect the sag around the zero crossing voltage is proposed.

Determination of Air-dry Density of Wood with Polychromatic X-ray and Digital Detector

  • Kim, Chul-Ki;Kim, Kwang-Mo;Lee, Sang-Joon;Lee, Jun-Jae
    • Journal of the Korean Wood Science and Technology
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    • 제45권6호
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    • pp.836-845
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    • 2017
  • Gravimetric method is usually used to evaluate air-dry density, which is governing physical or mechanical properties of wood. Although it had high evaluation accuracy, the method is time consuming process. Thus, this study was conducted to estimate air-dry density of wood with high accuracy by using polychromatic X-ray and digital detector as alternative of gravimetric method. To quantify polychromatic X-ray projection for evaluating air-dry density, Lambert-Beer's law with the integral value of probability function was used. The integral value was used as weighting factor in the law, and it was determined by conducting simple test at various penetration depths and tube voltage. Mass attenuation coefficient (MAC) of wood also calculated by investigating polychromatic X-ray projection according to species, penetration depth and tube voltage. The species had not an effect on change of MAC. Finally, an air-dry density of wood was estimated by applying the integral value, MAC and Lambert-Beer's law to polychromatic X-ray projection. As an example, the relation of the integral value (${\alpha}$) according to penetration depth (t, cm) at tube voltage of 35 kV was ${\alpha}=-0.00091t{\times}0.0184$ while the regression of the MAC (${\mu}$, $cm^2/g$) was ${\mu}=0.5414{\exp}(-0.0734t)$. When calculation of root mean squared error (RMSE) was performed to check the estimation accuracy, RMSE at 35, 45 and 55 kV was 0.010, 0.013 and $0.009g/cm^3$, respectively. However, partial RMSE in relation to air-dry density was varied according to tube voltage. The partial RMSE below air-dry density of $0.41g/cm^3$ was $0.008g/cm^3$ when tube voltage of 35 kV was used. Meanwhile, the partial RMSE above air-dry density of $0.41g/cm^3$ decreased as tube voltage increased. It was conclude that the accuracy of estimation with polychromatic X-ray and digital detector was quite high if the integral value and MAC of wood were determined precisely or a condition of examination was chosen properly. It was seemed that the estimation of air-dry density by using polychromatic X-ray system can supplant the gravimetric method.

SOI NMOSFET을 이용한 Photo Detector의 특성 (Properties of Photo Detector using SOI NMOSFET)

  • 김종준;정두연;이종호;오환술
    • 한국전기전자재료학회논문지
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    • 제15권7호
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    • pp.583-590
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    • 2002
  • In this paper, a new Silicon on Insulator (SOI)-based photodetector was proposed, and its basic operation principle was explained. Fabrication steps of the detector are compatible with those of conventional SOI CMOS technology. With the proposed structure, RGB (Read, Green, Blue) which are three primary colors of light can be realized without using any organic color filters. It was shown that the characteristics of the SOI-based detector are better than those of bulk-based detector. To see the response characteristics to the green (G) among RGB, SOI and bulk NMOSFETS were fabricated using $1.5\mu m$ CMOS technology and characterized. We obtained optimum optical response characteristics at $V_{GS}=0.35 V$ in NMOSFET with threshold voltage of 0.72 V. Drain bias should be less than about 1.5 V to avoid any problem from floating body effect, since the body of the SOI NMOSFET was floated. The SOI and the bulk NMOSFETS shown maximum drain currents at the wavelengths of incident light around 550 nm and 750 nm, respectively. Therefore the SOI detector is more suitable for the G color detector.

에너지 하베스팅을 위한 이중 모드 부스트 컨버터 (Dual Mode Boost Converter for Energy Harvesting)

  • 박형렬;여재진;노정진
    • 전기전자학회논문지
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    • 제19권4호
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    • pp.573-582
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    • 2015
  • 본 논문은 에너지 하베스팅용 이중 모드 부스트 컨버터 설계에 관한 것이다. 설계된 회로는 에너지 하베스팅에 의해 출력된 작은 전압으로부터 startup 회로를 통해 승압된 전압을 얻는다. 이 전압이 일정 전압 이상이 되면, 전압 감지기에 의해 startup 회로에 공급되는 전압이 차단이 된다. 승압된 전압은 부스트 컨트롤러에 의해 최종적으로 $V_{OUT}$이 된다. 회로는 크게 전하 펌프를 위한 오실레이터, 전하 펌프, 펄스 생성기, 전압 감지기, 부스트 컨트롤러로 구성되어있다. 매그나칩 / SK하이닉스의 $0.18{\mu}m$ CMOS 공정을 사용하였다. 설계된 회로는 테스트 결과 최소 입력 전압은 600mV이며, 출력은 3V이고, startup time은 20ms이다. 제작된 부스트 컨버터의 효율은 load current가 3mA일때, 47%로 측정되었다.

위상차 전압 변환기를 이용한 Fractional-N 위상고정루프 (A Fractional-N PLL with Phase Difference-to-Voltage Converter)

  • 이상기;최영식
    • 한국정보통신학회논문지
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    • 제16권12호
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    • pp.2716-2724
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    • 2012
  • 본 논문에서는 기존의 fractional-N 위상고정루프의 가장 큰 문제점인 fractional 스퍼를 억제하기 위해 위상차-전압 변환기(Phase Difference-to-Voltage Converter : PDVC)를 도입하였다. PDVC는 위상주파수 검출기 출력 신호의 위상차에 따라 전하펌프의 전류량을 조절한다. 제안한 구조는 위상 주파수 검출기(phase frequency detector) 신호들의 위상차가 커지면 전하펌프(charge pump) 전류를 감소시켜 fractional 스퍼를 줄일 수 있는 구조이다. 회로는 1.8V $0.18{\mu}m$ CMOS 공정의 파라미터를 이용하여 HSPICE로 시뮬레이션을 수행하고 회로의 동작을 검증하였다.