• 한국정보통신학회논문지
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• 제13권9호
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• pp.1858-1864
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• 2009

본 논문에서는 power management IC에 사용되는 비휘발성 메모리 IP인 1-kd OTP IP를 설계하였다. 기존의 OTP 셀 (cell)은 isolated NMOS 트랜지스터를 안티퓨즈 (antifuse)로 사용하였으나 BCD 공정에서는 셀 크기가 큰 단점이 있다. 그래서 본 논문에서는 isolated NMOS 트랜지스터 대신 PMOS 트랜지스터를 안티퓨즈로 사용하였으며, OTP 셀 트랜지스터의 크기를 최적화시켜 셀의 크기를 최소화시켰다. 그리고 ESD 테스터 시 PMOS 안티퓨즈 양단에 고전압 (high voltage)가 걸려 임의의 셀이 프로그램 되는 것을 방지하기 위하여 OTP 코어 회로에 ESD 보호 회로 (protection circuit)를 추가하였다. 또한 프로그램 되지 않은 셀을 읽을 때 게이트 커플링 노이즈를 제거하기 위해 high-impedance의 PMOS pull-up 트랜지스터를 ON 시키는 방식을 제안하였다. 동부하이텍 $0.18{\mu}m$ BCD 공정을 이용하여 설계된 1-kb PMOS-type 안티퓨즈 OTP IP의 레이아웃 크기는 $129.93{\times}452.26{\mu}m^2$이다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.326-326
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• 2014

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.174-174
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• 2014

Memristor devices are one of the most promising candidate approaches to next-generation memory technologies. Memristive switching phenomena usually rely on repeated electrical resistive switching between non-volatile resistance states in an active material under the application of an electrical stimulus, such as a voltage or current. Recent reports have explored the use of variety of external operating parameters, such as the modulation of an applied magnetic field, temperature, or illumination conditions to activate changes in the memristive switching behaviors. Among these possible choices of signal controlling factors of memristor, photon is particularly attractive because photonic signals are not only easier to reach directly over long distances than electrical signal, but they also efficiently manage the interactions between logic devices without any signal interference. Furthermore, due to the inherent wave characteristics of photons, the facile manipulation of the light ray enables incident light angle controlled memristive switching. So that, in the tautological sense, device orienting position with regard to a photon source determines the occurrence of memristive switching as well. To demonstrate this position controlled memory device functionality, we have fabricated a metal-semiconductor-metal memristive switching nanodevice using ZnO nanorods. Superhydrophobicity employed in this memristor gives rise to illumination direction selectivity as an extra controlling parameter which is important feature in emerging. When light irradiates from a point source in water to the surface treated device, refraction of light ray takes place at the water/air interface because of the optical density differences in two media (water/air). When incident light travels through a higher refractive index medium (water; n=1.33) to lower one (air; n=1), a total reflection occurs for incidence angles over the critical value. Thus, when we watch the submerged NW arrays at the view angles over the critical angle, a mirror-like surface is observed due to the presence of air pocket layer. From this processes, the reversible switching characteristics were verified by modulating the light incident angle between the resistor and memristor.

• 한국재료학회지
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• 제20권5호
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• pp.257-261
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• 2010

A non-volatile resistive random access memory (RRAM) device with a Cr-doped $SrZrO_3/SrRuO_3$ bottom electrode heterostructure was fabricated on $SrTiO_3$ substrates using pulsed laser deposition. During the deposition process, the substrate temperature was $650^{\circ}C$ and the variable ambient oxygen pressure had a range of 50-250 mTorr. The sensitive dependences of the film structure on the processing oxygen pressure are important in controlling the bistable resistive switching of the Cr-doped $SrZrO_3$ film. Therefore, oxygen pressure plays a crucial role in determining electrical properties and film growth characteristics such as various microstructural defects and crystallization. Inside, the microstructure and crystallinity of the Cr-doped $SrZrO_3$ film by oxygen pressure were strong effects on the set, reset switching voltage of the Cr-doped $SrZrO_3$. The bistable switching is related to the defects and controls their number and structure. Therefore, the relation of defects generated and resistive switching behavior by oxygen pressure change will be discussed. We found that deposition conditions and ambient oxygen pressure highly affect the switching behavior. It is suggested that the interface between the top electrode and Cr-doped $SrZrO_3$ perovskite plays an important role in the resistive switching behavior. From I-V characteristics, a typical ON state resistance of $100-200\;{\Omega}$ and a typical OFF state resistance of $1-2\;k{\Omega}$, were observed. These transition metal-doped perovskite thin films can be used for memory device applications due to their high ON/OFF ratio, simple device structure, and non-volatility.

• 한국정보과학회논문지:데이타베이스
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• 제35권4호
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• pp.319-332
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• 2008

OLAP의 다차원 데이타 모델인 데이타 큐브는 많은 다차원 데이타 분석에 성공적으로 적용되었으며, 데이타 스트림 분석에도 적용하려는 많은 연구가 진행되고 있다. 데이타 스트림은 실시간에 지속적으로 방대하게 생성되며, 데이타의 분포적 특성이 빠르게 변한다는 특징을 가지며, 제한된 메모리 및 처리능력 때문에 한번만 검사하여 처리하는 것을 기본으로 한다. 때문에 데이타 스트림을 메모리에 모두 저장하는 것은 불가능하다. 또한 사용자는 모든 속성 값에 대하여 관심을 두기보다는 일정 지지율 이상을 가진 속성 값에 더욱 관심을 가지게 된다. 본 논문에서는 이러한 데이타 스트림 환경에서 데이타 큐브를 효과적으로 적용하기 위한 동적 데이타 큐브를 제안한다. 동적 데이타 큐브는 속성 값의 지지율에 따라 사용자 관심 영역을 지정하고, 속성 값을 동적으로 그룹화하여 관리한다. 이를 통해 메모리 및 처리시간을 절약하게 된다. 또한 동적으로 지지율이 높은 속성에 대한 분석 상세도를 높여주기 때문에 사용자의 관심영역을 효과적으로 보여준다. 마지막으로 실험을 통하여 제한된 메모리에서 동적 데이타 큐브가 효율적으로 동작함을 검증하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.408-408
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• 2012

It is well known that magnetic random access memory (MRAM) is nonvolatile memory devices using ferromagnetic materials. MRAM has the merits such as fast access time, unlimited read/write endurance and nonvolatility. Although DRAM has many advantages containing high storage density, fast access time and low power consumption, it becomes volatile when the power is turned off. Owing to the attractive advantages of MRAM, MRAM is being spotlighted as an alternative device in the future. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal- oxide semiconductor (CMOS). MTJ stacks are composed of various magnetic materials. FePt thin films are used as a pinned layer of MTJ stack. Up to date, an inductively coupled plasma reactive ion etching (ICPRIE) method of MTJ stacks showed better results in terms of etch rate and etch profile than any other methods such as ion milling, chemical assisted ion etching (CAIE), reactive ion etching (RIE). In order to improve etch profiles without redepositon, a better etching process of MTJ stack needs to be developed by using different etch gases and etch parameters. In this research, influences of $O_2$ gas on the etching characteristics of FePt thin films were investigated. FePt thin films were etched using ICPRIE in $CH_4/O_2/Ar$ gas mix. The etch rate and the etch selectivity were investigated in various $O_2$ concentrations. The etch profiles were studied in varying etch parameters such as coil rf power, dc-bias voltage, and gas pressure. TiN was employed as a hard mask. For observation etch profiles, field emission scanning electron microscopy (FESEM) was used.

• 정보보호학회논문지
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• 제30권3호
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• pp.397-403
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• 2020

실시간 대화, 멀티미디어, 파일 및 연락처 공유 서비스의 편리함으로 대다수 사용자는 인스턴트 메신저를 사용하며, 제공하는 기능이 다양해짐에 따라 메신저 이용 시간이 증가하고 있다. 이러한 이유로 메신저는 많은 양의 사용자의 행위 정보를 포함하고 있다. 따라서 디지털 포렌식 관점에서는 메신저 데이터를 사용자 행위 파악을 위한 유용한 증거물로 활용할 수 있다. 그러나 개인정보보호를 목적으로 중요 정보는 암호화하여 저장하기 때문에 증거로 사용하기 어려우며, 사용자가 고의로 메신저 데이터를 삭제한 경우에는 데이터 획득이 불가능하다. 따라서 메신저 데이터를 증거로 사용하기 위해서는 암호화된 메시지 복호화와 삭제된 메시지 복구 연구는 필수적으로 선행되어야 한다. 본 논문에서는 윈도우 환경에서 인스턴트 메신저인 말랑말랑 톡카페의 데이터베이스 암호화 프로세스를 분석하였으며, 복호화에 성공하였다. 또한, 삭제된 메시지를 식별하고 이를 휘발성 메모리 영역에서 복구하였다.

• 전기전자학회논문지
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• 제28권1호
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• pp.78-89
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• 2024

차량용 반도체에서 사용되는 BCD 공정 기반의 PMIC 칩은 아날로그 회로를 트리밍하기 위해 추가 마스크가 필요없는 MTP(Multi-Time Programmable) IP(Intellectual Property)를 요구한다. 본 논문에서는 저면적 MTP IP 설계를 위해 2개의 트랜지스터와 1개의 MOS 커패시터를 갖는 single poly EEPROM 셀인 MTP 셀에서 NCAP(NMOS Capacitor) 대신 PCAP(PMOS Capacitor)을 사용한 MTP 셀을 사용하여 MTP 셀 사이즈를 18.4% 정도 줄였다. 그리고 MTP IP 회로 설계 관점에서 MTP IP 설계의 CG 구동회로와 TG 구동회로에 2-stage voltage shifter 회로를 적용하였고, DC-DC 변환기 회로의 면적을 줄이기 위해 전하 펌핑 방식을 사용하는 VPP(=7.75V), VNN(=-7.75V)와 VNNL(=-2.5V) 전하 펌프 회로에서 각각의 전하 펌프마다 별도로 두고 있는 ring oscillator 회로를 하나만 둔 회로를 제안하였으며, VPPL(=2.5V)은 전하펌프 대신 voltage regulator 회로를 사용하는 방식을 제안하였다. 180nm BCD 공정 기반으로 설계된 4Kb MTP IP 사이즈는 0.493mm²이다.

• Bulletin of the Korean Chemical Society
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• 제27권9호
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• pp.1393-1396
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• 2006

The 1+1 two-photon Resonant Enhanced Multiphoton Ionization (REMPI) spectra of 1,4-dichlorobenzene was obtained from 240 nm through to 250 nm on a laser mass spectrometer. Special care was taken to build up a heatable sample inlet system suitable for detecting a trace semi-volatile organic compound and reducing the memory effort on the inner wall of the inlet system. The detection limits of 1,4-dichlorobenzene in ppbV/V concentration range at certain wavelengths are presented.

• 산업기술연구
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• 제21권B호
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• pp.133-139
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• 2001

Generally $PbTiO_3$ is manufactured in a form of thin films which is useful for the application of infrared sensors and non-volatile memory devices. Moreover $PbTiO_3$ has a characteristic of adsorption for organic acid as well as electronic property. Organic acid adsorption properties of $PbTiO_3$ powder prepared by sol-gel method was compared with the powder purchased from Aldrich Co. Crystallization and particle size of $PbTiO_3$ are influenced by process variables, such as dilution of sol solution, catalysis, calcination temperature, calcination time, etc. As the size of $PbTiO_3$ power decreased until several nanometers, adsorption of acetic acid and formic acid was increased 1.5-fold and 1.2-fold respectively.