• Analytical Science and Technology
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• v.34 no.1
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• pp.23-35
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• 2021

In order to measure the volatile organic compounds (VOCs) of a sample which is too large to use commercially available chamber, a stainless steel vacuum chamber (VC) (with an internal diameter of 205 mm and a height of 50 mm) was manufactured and the temperature of the chamber was controlled using an oven. After concentrating the volatiles of the sample in the chamber by helium gas, it was made possible to remove residual volatile substances present in the chamber under reduced pressure ((2 ± 1) × 10-2 mmHg). The chamber was connected to a purge & trap (P&T) using a 6 port valve to concentrate the VOCs, which were analyzed by gas chromatography-mass spectrometry (GC-MS) after thermal desorption (VC-P&T-GC-MS). Using toluene, the toluene recovery rate of this device was 85 ± 2 %, reproducibility was 5 ± 2 %, and the detection limit was 0.01 ng L-1. The method of removing VOCs remaining in the chamber with helium and the method of removing those with reduced pressure was compared using Korean drinking water regulation (KDWR) VOC Mix A (5 μL of 100 ㎍ mL-1) and butylated hydroxytoluene (BHT, 2 μL of 500 ㎍ mL-1). In case of using helium, which requires a large amount of gas and time, reduced pressure ((2 ± 1) × 10-2 mmHg) only during the GC-MS running time, could remove VOCs and BHT to less than 0.1 % of the original injection concentration. As a result of analyzing volatile substances using VC-P&T-GC-MS of six types of cell phone case, BHT was detected in four types and quantitatively analyzed. Maintaining the chamber at reduced pressure during the GC-MS analysis time eliminated memory effect and did not affect the next sample analysis. The volatile substances in a cell phone case were also analyzed by dynamic headspace (HT3) and GC-MS, and the results of the analysis were compared with those of VC-P&T-GC-MS. Considering the chamber volume and sample weight, the VC-P&T configuration was able to collect volatile substances more efficiently than the HT3. The VC-P&T-GC-MS system is believed to be useful for VOCs measurement of inhomogeneous large sample or devices used inside clean rooms.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.5
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• pp.224-230
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• 2001

The characteristics of $NO/N_2O$ annealed reoxidized nitrided oxide being studied as super thin gate oxide and gate dielectric layers of Non-Volatile Semiconductor Memory (NVSM) were investigated by Dynamic Secondary Ion Mass Spectrometry (D-SIMS), Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS), and Auger Electron Spectroscopy (AES). The specimen was annealed by $NO/N_2O$ after initial oxide process and then rcoxidized for nitrogen redistribution in nitrided oxide. Out-diffusion of incorporated nitrogen during the wet oxidation in reoxidation process took place more strongly than that of the dry oxidation. It seems to indicate that hydrogen plays a role in breaking the Si N bonds. As reoxidation proceeds, incorporated nitrogen of $NO/N_2O$ annealed nitrided oxide is obsen-ed to diffuse toward the surface and substrate at the same time. ToF-SIMS results show that SiON species are detected at the initialoxide interface, and Si,NO species near the new $Si_2NO$ interface that formed after reoxidation. These SiON and $Si_2NO$ species most likely to relate to the origin of the state of memory charge traps in reoxidized nitrided oxide, because nitrogen dangling bonds of SiON and silicon dangling bonds of $Si_2NO$ are contained defects associated with memory effect.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.386-389
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• 2009

The electrical characteristics and annealing effects of tunneling dielectrics stacked with $SiO_2$ and $Si_{3}N_{4}$ were investigated. I-V characteristics of band gap engineered tunneling gate stacks consisted of $Si_{3}N_{4}/SiO_2/Si_{3}N_{4}$ (NON), $SiO_2/Si_{3}N_{4}/SiO_2$ (ONO) dielectrics were evaluated and compared with $SiO_2$ single layer using the MOS (metal-oxide-semiconductor) capacitor structure. The leakage currents of engineered tunneling barriers (ONO, NON stacks) are lower than that of the conventional $SiO_2$ single layer at low electrical field. Meanwhile, the engineered tunneling barriers have larger tunneling current at high electrical field. Furthermore, the increased tunneling current through engineered tunneling barriers related to high speed operation can be achieved by annealing processes.

• Journal of KIISE:Computing Practices and Letters
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• v.14 no.2
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• pp.241-245
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• 2008

Non-volatile RAM (NVRAM) has both characteristics of nonvolatility and byte addressability. In order to efficiently exploit this NVRAM in the file system layer, we proposed the MiNV (Metadata in NVram) file system in our previous research. MiNV file system maintains all the metadata in NVRAM while storing file data in NAND Flash memory. In this paper, we experimentally analyze the efficiency for the execution of garbage collection in the MiNV file system. Also, we quantify the file system performance gains obtained from efficient garbage collection. Experimental results show that garbage collection on the MiNV file system executes more efficiently that on YAFFS even though these file systems adopt exactly the same garbage collection policy. Specifically, the MiNV file system invokes the aggressive garbage collection mechanism less frequently than YAFFS. Additionally, the MiNV file system postpones the first execution of the aggressive garbage collection mechanism in our experiments. From the experiments, we verify that the efficiency of garbage collection leads to performance improvements of the MiNV file system.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.22 no.1
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• pp.67-80
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• 2012

Recently as the number of smartphone user is growing rapidly, android is also getting more interest in digital forensic. However, there is not enough research on digital data acquisition and analysis based on android platform's unique characteristics so far. Android system stores all the related recent systemwide logs from the system components to applications in volatile memory, and therefore, the logs can potentially serve as important evidences. In this paper, we propose a digital data acquisition and analysis system for android which extracts meaningful information based on the correlation of android logs and user activities from a device at runtime. We also present an efficient search scheme to facilitate realtime analysis on site. Finally, we demonstrate how the proposed system can be used to reconstruct the sequence of user activities in a more intuitive manner, and show that the proposed search scheme can reduce overall search and analysis time approximately 10 times shorter than the normal regular search method.

• Journal of KIISE
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• v.42 no.4
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• pp.434-441
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• 2015

Next generation memory technologies, which we denote as 'new memory', have both non-volatile and byte addressable properties. These characteristics are expected to bring changes to the conventional computer system structure. In this paper, we propose a fast boot technique for hybrid main memory architectures that have both new memory and DRAM. The key technique used for fast booting is write-tracking. Write-tracking is used to detect and manage modified data detection and involves setting the kernel region to read-only. This setting is used to trigger intentional faults upon modification requests. As the fault handler can detect the faulting address, write-tracking makes use of the address to manage the modified data. In particular, in our case, we make use of the MMU (Memory Management Unit) translation table. When a write occurs to the boot completed state, write-tracking preserves the original state of the modified address of the kernel region to a particular location, and execution continues. Upon booting, the fast booting process restores the preserved data to the original kernel region allowing rapid system boot-up. We develop the fast booting technique in an actual embedded board equipped with new memory. The boot time is reduced to less than half a second compared to around 15 seconds that is required for the original system.

• Journal of KIISE:Computing Practices and Letters
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• v.14 no.1
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• pp.91-95
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• 2008

Flash memory is widely used in embedded systems because of its benefits such as non-volatile, shock resistant, and low power consumption. But NAND flash memory suffers from out-place-update, limited erase cycles, and page based read/write operations. To solve these problems, log-structured filesystem was proposed such as YAFFS. However, YAFFS sequentially retrieves an array of all block information to allocate free block for a write operation. Also before the write operation, YAFPS read the array of block information to find invalid block for erase. These could reduce the performance of the filesystem. This paper suggests fast operation method for NAND flash filesystem that solves the above-mentioned problems. We implemented the proposed methods in YAFFS. And we measured the performance compared with the original technique.

• Journal of KIISE:Computer Systems and Theory
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• v.36 no.6
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• pp.451-462
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• 2009

Recently, there are many active studies to enhance low I/O performance of hard disk device. The studies on the hardware make good progress whereas those of the system software to enhance I/O performance may not support the hardware performance due to its poor progress. In this paper, we propose a new method of prefetching n-blocks into the flash memory. The proposed method consists of three steps: (1)analyzing the pattern of read requests in block units; (2)determining the number of blocks prefetched to flash memory; (3)replacing blocks according to block replacement policy. The proposed method can reduce the latency time of hard disk and optimize the power consumption of the computer system. Experimental results show that the proposed dynamic n-block method provides better average response time than that of the existing AMP(Adaptive multi stream prefetching) method by 9.05% and reduces the average power consumption than that of the existing AMP method by 11.11%.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.390-390
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• 2012

Information technology industries has grown rapidly and demanded alternative memories for the next generation. The most popular random access memory, dynamic random-access memory (DRAM), has many advantages as a memory, but it could not meet the demands from the current of developed industries. One of highlighted alternative memories is magnetic random-access memory (MRAM). It has many advantages like low power consumption, huge storage, high operating speed, and non-volatile properties. MRAM consists of magnetic-tunnel-junction (MTJ) stack which is a key part of it and has various magnetic thin films like CoFeB, FePt, IrMn, and so on. Each magnetic thin film is difficult to be etched without any damages and react with chemical species in plasma. For improving the etching process, a high density plasma etching process was employed. Moreover, the previous etching gases were highly corrosive and dangerous. Therefore, the safety etching gases are needed to be developed. In this research, the etch characteristics of CoFeB magnetic thin films were studied by using an inductively coupled plasma reactive ion etching in $CH_4/O_2/Ar$ gas mixes. TiN thin films were used as a hardmask on CoFeB thin films. The concentrations of $O_2$ in $CH_4/O_2/Ar$ gas mix were varied, and then, the rf coil power, gas pressure, and dc-bias voltage. The etch rates and the selectivity were obtained by a surface profiler and the etch profiles were observed by a field emission scanning electron microscopy. X-ray photoelectron spectroscopy was employed to reveal the etch mechanism.

• Journal of the Korean Magnetics Society
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• v.19 no.1
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• pp.35-42
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• 2009

Among the next generation memory, MRAM (Magnetic Random Access Memory) is worthy of notice for substituting the preexisting memory thanks to its non-volatile property and other advantages. Recently perpendicular MRAM and spin transfer torque MRAM techniques are under active investigation to realize a high density and low power consumption. As a result, there are increasing of patents applications for high density, low current density for magnetization switching and high thermal stability. In this paper, we analyze the trend of patent applications and registrations about MRAM and propose a direction of future investigation.