• Transactions of Materials Processing
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• v.18 no.8
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• pp.596-600
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• 2009

Finite element simulation is an alternative method to practically find the forming limit diagram(FLD). In this paper, the novel fracture criterion is utilized to predict the FLD in conjunction with finite element analysis for sheet forming. The principal scheme of the fracture criterion in this paper is that growth of the micro voids leads up to fracture in the viewpoint of micro-mechanics. The numerical FLD is verified by results of the out-of plane stretching test using hemispherical punch. The verification is also conducted about two types of material. These results are in good accord with the experimental results. Especially, the proposed scheme is appropriate to predict FLDs for a restricted material with low ductility after the instability point or ultimate tensile strength.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.30 no.12 s.255
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• pp.1573-1580
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• 2006

In this study, fatigue tests were carried out under push-pull loading condition using spheroidal graphite cast iron in order to clarify the internal fatigue fracture mechanism in an extremely low cycle fatigue regime. It is found that a successive observation of internal fatigue damage it is found that the fracture processes go through three stages, that is, the generation, growth and coalescence of microvoids originated from debonding of graphite-matrix interface. It is also found that the crack which is initiated from the void propagates by coalescence of neighboring cracks and the fatigue crack growth rate can be expressed in form of the Manson-Coffin rule type. In this paper, quantitative analyses of fatigue properties for realization of simulation about fatigue life evaluation are also presented.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.09a
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• pp.79-83
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• 1998

Plasma display panel is a potential candidate for HDTV, due to the fact hat the expansion of screen size is much easier using thick film technology. In this study, transparent dielectric materials using lead borosilicate glasses is developed, which satisfy the requirements of dielectrics for PDP. Paste is made of this glass composition. The paste has thixotropic behavior suitable for screen printing. The paste shows more thixotropic behavior as the particle size decrease. After firing, cross sectional area was analyzed by SEM. The void of fired thick film was removed using bimodal particle system. The dielectric showed good adhesion characteristics.

• Journal of Korean Vacuum Science & Technology
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• v.1 no.1
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• pp.38-44
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• 1997

Epitaxial growth of SiC films on Si(111) substrates without carbonization was carried out n the temperature range of 900-100$0^{\circ}C$ under high vacuum conditions by single source chemical vapor deposition (CVD) of 1,3-disilabutane (H$_3$SiCH$_2$SiH$_2$$CH_3$). The monocrystalline nature of the films was confirmed by XRD, RHEED and cross-sectional TED. Cross-sectional TEM image indicated that no void exists and the boundary is clear and smooth at the SiC-Si(111) interface. RBS and AES analyses also showed that the films are stoichiometric and homogeneous in depth, From the results, this single source growth techniqe of using 1,3-disilabutane has been found suitable and effective for epitaxial growth of stoichiometric SiC on Si(111) without carbonization at temperatures below 100$0^{\circ}C$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.240-248
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• 1998

The plasma chemical vapor deposition is one of the most utilized techniques for the diamond growth. As the applications of diamond thin films prepared by plasma chemical vapor deposition(CVD) techniques become more demanding, improved fine-tuning and control of the process are required. The important parameters in diamond film deposition include the substrate temperature, $CH_4/H_2$ gas flow ratio, total, gas pressure, and gas excitation power. With the spectroscopic ellipsometry, the substrate temperature as well as the various parameters of the film can be determined without the physical contact and the destructiveness under the extreme environment associated with the diamond film deposition. It is introduced how the real-time spectroscopic ellipsometry is used and the data are analyzed with the view of getting the growth condition and the accompanied features for a good quality of diamond films. And it is determined the important parameters during the diamond film growth, which include the final sample will be measured with Raman spectroscopy to confirm the diamond component included in the film.

• Cross-Cultural Studies
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• v.47
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• pp.1-26
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• 2017

This paper focuses on three novels that reflect absence of family. Conflicts caused by absence of parents or lack of function and role of parents were principle drivers fueling growth novels. In Chinese growth novels, children in a long-standing tradition of emulsion and political pressure were unable to express their conflict with parents. Out of the collective interest and only until the late 1980s, which can be found of the individuals were able to fully appreciate the growth of children. Since the late 1990s, the creative individual cases to the growth is an important point of Chinese growth. Due to a close relationship of the literature and politics further noteworthy that the growth of state for personal growth for China's growth. Reform and opening up the end of the Cultural Revolution, the emergence of new generation of cultural sensitivity with a relatively free personal attention to the growth of the chance that can be. In this paper, created since the 1990s, the growth of the stories of yuhua (余華)'s "Cry in the Rain"("在細雨中呼喊"), sutong(蘇童)'s "The Northern Part of the City"("城北地帶"), wanggang(王剛)'s "English"("英格力士"), going to go through by focusing on how to respond in the lack of family. "Cry in the Rain" shows that a consciousness orphan child abandoned main actors 'consciousness from his birth parents and adoptive parents. "The Northern Part of the City" chronicles different growth stories of children who experienced a void because of their absent families and found comfort in peer groups. "English" is distinguished from the mainstream narrative of Chinese growth in terms of creating a role model. Individual growth through the role model in that it will eventually establish their own identities and further growth. Because of that, this novel is considered best practices of Chinese growth novels. This kind of narrative, which returns to the memory of the growth of growth, has a richer connotation amid various attempts by writers out of the past era of obsession and fatigue.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.140-140
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• 2018

The 3D interconnect technologies have been appeared, as the density of Integrated Circuit (IC) devices increases. Through Silicon Via (TSV) process is an important technology in the 3D interconnect technologies. And the process is used to form a vertically electrical connection through silicon dies. This TSV process has some advantages that short length of interconnection, high interconnection density, low electrical resistance, and low power consumption. Because of these advantages, TSVs could improve the device performance higher. The fabrication process of TSV has several steps such as TSV etching, insulator deposition, seed layer deposition, metallization, planarization, and assembly. Among them, TSV metallization (i.e. TSV filling) was core process in the fabrication process of TSV because TSV metallization determines the performance and reliability of the TSV interconnect. TSVs were commonly filled with metals by using the simple electrochemical deposition method. However, since the aspect ratio of TSVs was become a higher, it was easy to occur voids and copper filling of TSVs became more difficult. Using some additives like an accelerator, suppressor and leveler for the void-free filling of TSVs, deposition rate of bottom could be fast whereas deposition of side walls could be inhibited. The suppressor was adsorbed surface of via easily because of its higher molecular weight than the accelerator. However, for high aspect ratio TSV fillers, the growth of the top of via can be accelerated because the suppressor is replaced by an accelerator. The substitution of the accelerator and the suppressor caused the side wall growth and defect generation. The suppressor was used as Single additive electrodeposition of TSV to overcome the constraints. At the electrochemical deposition of high aspect ratio of TSVs, the suppressor as single additive could effectively suppress the growth of the top surface and the void-free bottom-up filling became possible. Generally, copper was used to fill TSVs since its low resistivity could reduce the RC delay of the interconnection. However, because of the large Coefficients of Thermal Expansion (CTE) mismatch between silicon and copper, stress was induced to the silicon around the TSVs at the annealing process. The Keep Out Zone (KOZ), the stressed area in the silicon, could affect carrier mobility and could cause degradation of the device performance. Cobalt can be used as an alternative material because the CTE of cobalt was lower than that of copper. Therefore, using cobalt could reduce KOZ and improve device performance. In this study, high-aspect ratio TSVs were filled with cobalt using the electrochemical deposition. And the filling performance was enhanced by using the suppressor as single additive. Electrochemical analysis explains the effect of suppressor in the cobalt filling bath and the effect of filling behavior at condition such as current type was investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.6
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• pp.386-391
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• 2018

An epitaxial GaN layer was grown on a cone-shape-patterned sapphire substrate (PSS) (Sample A) and an AlN-buffered PSS (Sample B) with two growth steps under the same process conditions by employing the hydride vapor phase epitaxy (HVPE) method. We have investigated the characteristics of the GaN layer grown on two kinds of substrates at each growth step. The cross-sectional SEM image of the GaN layer grown on the two types of substrates showed growth states of GaN layers formed during the 1st and 2nd growth steps with different growth durations. Dislocation density was obtained by calculation using the FWHM value of the rocking curve for (002) and (102). Sample A showed 2.62+08E and 6.66+08E and sample B exhibited 5.74+07E and 1.65+08E for two different planes. The red shift was observed is photoluminescence (PL) analysis and Raman spectroscopy results. GaN layers grown on AlN-buffered PSS exhibited better optical and crystallographic properties than GaN layers grown on PSS.

• Korean Journal of Materials Research
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• v.18 no.1
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• pp.45-50
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• 2008

Microstructural evolution and the intermetallic compound (IMC) growth kinetics in an Au stud bump were studied via isothermal aging at 120, 150, and $180^{\circ}C$ for 300hrs. The $AlAu_4$ phase was observed in an Al pad/Au stud interface, and its thickness was kept constant during the aging treatment. AuSn, $AuSn_2,\;and\;AuSn_4$ phases formed at interface between the Au stud and Sn. $AuSn_2,\;AuSn_2/AuSn_4$, and AuSn phases dominantly grew as the aging time increased at $120^{\circ}C,\;150^{\circ}C,\;and\;180^{\circ}C$, respectively, while $(Au,Cu)_6Sn_5/Cu_3Sn$ phases formed at Sn/Cu interface with a negligible growth rate. Kirkendall voids formed at $AlAu_4/Au$, Au/Au-Sn IMC, and $Cu_3Sn/Cu$ interfaces and propagated continuously as the time increased. The apparent activation energy for the overall growth of the Au-Sn IMC was estimated to be 1.04 eV.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.941-943
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• 1998

Exploitation of equipment with cross linked polyethylene (XLPE) insulation requires its condition monitoring and diagnostic. Traditionally diagnostics of insulation is carried out by means of partial discharge detection. Many researchers have developed a lot of methods to identify the defect by the PD form. However, such identification of a defect, for example, void, inclusion or treeing, does not say about its danger from a point of view of full insulation gap breakdown and insulation construction failure. The information about the form and size of formed upon high voltage treeing is necessary for prediction of the remained resource of XLPE insulation. For this purpose we carry out experimental research for determination of the dependencies between PD characteristics in XLPE upon time and three dimension PD patterns of corresponding treeing. The investigations were carried out by means of electrical measurement of PD current and simultaneous optical recording of treeing image. Test results show that the PD patterns can be applied for detecting tree growth well.