Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Crystalline Properties of GaN Layers Grown on PSS and AlN Buffered PSS by HVPE Method

HVPE법을 이용하여 PSS와 AlN Buffered PSS 위에 성장시킨 GaN 박막의 결정 특성

  • Lee, Won Jun (Department of Advanced Materials Engineering, Dong-Eui University) ;
  • Park, Mi Seon (Department of Advanced Materials Engineering, Dong-Eui University) ;
  • Lee, Won Jae (Department of Advanced Materials Engineering, Dong-Eui University) ;
  • Kim, Il Su (Department of Advanced Materials Engineering, Dong-Eui University) ;
  • Choi, Young Jun (LumiGNtech Co., Ltd.) ;
  • Lee, Hae Yong (LumiGNtech Co., Ltd.)
  • Received : 2018.07.20
  • Accepted : 2018.08.14
  • Published : 2018.09.01
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Abstract

An epitaxial GaN layer was grown on a cone-shape-patterned sapphire substrate (PSS) (Sample A) and an AlN-buffered PSS (Sample B) with two growth steps under the same process conditions by employing the hydride vapor phase epitaxy (HVPE) method. We have investigated the characteristics of the GaN layer grown on two kinds of substrates at each growth step. The cross-sectional SEM image of the GaN layer grown on the two types of substrates showed growth states of GaN layers formed during the 1st and 2nd growth steps with different growth durations. Dislocation density was obtained by calculation using the FWHM value of the rocking curve for (002) and (102). Sample A showed 2.62+08E and 6.66+08E and sample B exhibited 5.74+07E and 1.65+08E for two different planes. The red shift was observed is photoluminescence (PL) analysis and Raman spectroscopy results. GaN layers grown on AlN-buffered PSS exhibited better optical and crystallographic properties than GaN layers grown on PSS.

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References

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