• 한국세라믹학회지
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• 제38권10호
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• pp.871-875
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• 2001

Cobalt silicidation at sidewall spacer edge of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) with post annealing treatment for capacitor forming process has been investigated as a function of dopant species. Cobalt silicidation of nMOSFET with n-type Lightly Doped Drain (LDD) and pMOSFET with p-type LDD produces a well-developed cobalt silicide with its lateral growth underneath the sidewall spacer. In case of pMOSFET with n-type LDD, however, a void is formed at the sidewall spacer edge with no lateral growth of cobalt silicide. The void formation seems to be due to a retarded silicidation process at the LDD region during the first Rapid Thermal Annealing (RTA) for the reaction of Co with Si, resulting in cobalt mono silicide at the LDD region. The subsequent second RTA converts the cobalt monosilicide into cobalt disilicide with the consumption of Si atoms from the Si substrate, producing the void at the sidewall spacer edge in the Si region. The void formed at the sidewall spacer edge serves as a resistance in the current-voltage characteristics of the pMOSFET device.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2008년도 추계학술발표대회 및 제15회 신소재 심포지엄
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• pp.28.1-28.1
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• 2008

• 유변학
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• 제9권2호
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• pp.60-65
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• 1997

PFP성형기술은 사출성형시 수지를 금형내에 환전히 채운후 저압의 공기를 이용하여 기포를 발생시켜 수지의 체적수축분을 기포의 성장에 의해 보상해주는 기술이다. 이방법은 일반 사출성형에서 많이 발생하는 싱크마크나 휨과 같은 변형문제를 해결하여 줄수 있으며 높은 압력을 필요로하지 않는다는 잇점을 가지고 있으나 이러한 최신공정에 대한 체계적인 연구는 미흡한 실정이다. 최근에 제시된 PFP성형공정의 모델링은 기포의 성장이 수지의 체 적수축에 의한 것이라는 가정을 근거로 기포핵이 생성된 이후의 기포성장을 모사하였으며 모델링에 해석결과는 몇가지 가정에도 불구하고 실험결과를 잘 설명하였다. 본 연구에서는 모델링이 가지는 문제점을 분석하고 기포성장의 메카니즘을 보다 체계적으로 이해하기 위하 여 실험적인 방법을 적용하였다. 많은 인자들을 효과적으로 고려하기 위하여 실험계획법을 적용하였으며 이를통하여 기포핵의 생성과 기포의 성장에 공기압 등이 매우 중요한 역할을 한다는 사실을 확인하였다. 이러한 결과는 모델링과 함께 PFP공정에 대한 체계적인 이해 뿐만 아니라 금형설계 및 성형조건의 설정등의 실제적인 문제해결에도 도움이 될것으로 기 대된다.

• 한국농공학회논문집
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• 제52권6호
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• pp.101-110
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• 2010

This study was performed to evaluate the void ratio and strength of porous polymer concrete used coarse aggregates and unsaturated polyester resin to find optimum mix design of porous polymer concrete for planting block. Also, this study was performed to evaluate the planting properties of herbaceous plant and cool-season grass in porous polymer blocks based on the experimental results of porous polymer concrete to develop environmentally friendly planting blocks. Tests for the void ratio and compressive strength of porous polymer concrete were performed at the curing age 7 days. Also, kinds of plants such as Tall fescue, Perennial ryegrass, Lespedeza and Alfalfa for planting were applied to porous polymer blocks. Within 6 weeks after seed, initial germination ratio, cover view and growth length for planting blocks were estimated by various methods.

• 한국재료학회지
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• 제20권12호
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• pp.645-648
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• 2010

The structure and morphology of epitaxial layer defects in epitaxial Si wafers produced by the Czochralski method were studied using focused ion beam (FIB) milling, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Epitaxial growth was carried out in a horizontal reactor at atmospheric pressure. The p-type Si wafers were loaded into the reactor at about $800^{\circ}C$ and heated to about $1150^{\circ}C$ in $H_2$. An epitaxial layer with a thickness of $4{\mu}m$ was grown at a temperature of 1080-$1100^{\circ}C$. Octahedral void defects, the inner walls of which were covered with a 2-4 nm-thick oxide, were surrounded mainly by $\{111\}$ planes. The formation of octahedral void defects was closely related to the agglomeration of vacancies during the growth process. Cross-sectional TEM observation suggests that the carbon impurities might possibly be related to the formation of oxide defects, considering that some kinds of carbon impurities remain on the Si surface during oxidation. In addition, carbon and oxygen impurities might play a crucial role in the formation of void defects during growth of the epitaxial layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.234-238
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• 1999

The correlation between shape of electrical trees and partial discharge(PD) pulses in low density polyethylene(LDPE) were discussed. We observed growth feature of electrical tree by using optical microscope. On the basis of experimental results of measurements of trees occurring in the needle-plane arrangement with needle shape void and without needle shape void , statistical quantities are derived, which are relevant to PD pulse amplitude and phase. The PD quantities detected by partial discharge detector. we were analyzed q-n distribution pattern and $\psi$ -q-n distribution pattern. In this experiment, electrical trees in the needle-plane arrangement with needle shape void propagated branch type tree and in the needle-plane arrangement without needle shape void propagated bush type tree

• 대한기계학회논문집A
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• 제32권4호
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• pp.319-326
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• 2008

In this study, we investigate the deformation behavior of F.C.C. single crystals containing micro- or submicron-sized voids by using three dimensional finite element methods. The locally homogeneous constitutive model for the rate-dependent crystal plasticity is integrated based on the backward Euler method and implemented into a finite element program (ABAQUS) by means of user-defined subroutine (UMAT). The unit cell analysis has been investigated to study the effect of stress triaxiality and crystallographic orientations on the growth and coalescence of voids in F.C.C. single crystals.

• 한국전기전자재료학회논문지
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• 제23권11호
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• pp.837-842
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• 2010

This paper describes the crystallinity, growth rate, and surface morphology of single crystalline 3C-SiC (cubic silicon carbide) thin films grown with several carbonization conditions such as temperature, $C_3H_8$ flow rate, time. In case of carbonization, an increase in the carbonization temperature caused a increase in the size and numbers of unsealed void (big black spot) which decrease the crystallinity. In addition, optimal $C_3H_8$ flow rate made carbonization layer form well and prevented the formation of voids. Also, after a period of time, the growth of carbonization layer did not increase no more. The single crystalline 3C-SiC thin films on optimal carbonized Si substrate showed an improvement on the crystallinity, the growth rate, the roughness, and the carrier concentration.

• 전자공학회논문지 IE
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• 제48권2호
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• pp.1-5
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• 2011

HVPE법으로 $3{\mu}m$의 GaN epi를 성장하고 이 위에 DC 마그네트론 Sputter를 이용하여 Ti stripe 패턴 형성하였으며 다시 HVPE를 이용하여 $120{\mu}m$ ~ $300{\mu}m$ 두께의 GaN를 overgrowth하였다. 성장된 GaN는 SEM 측정으로 Ti 패턴한 부분에서 void가 관찰되었고 보다 두꺼운 GaN를 성장시에는 크랙이 void를 따라 발생할 수 있음을 확인하였으며 XRD측정으로 FWHM은 188 arcsec로 측정되었다. 성장전의 GaN epi와의 반치폭을 비교하였을 때 패턴에 사용된 Ti는 overgrowth시 결정성에는 크게 영향을 주지 않는다는 것을 확인하였다.

• 대한기계학회논문집B
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• 제31권3호
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• pp.225-233
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• 2007

The growth of GaN on the patterned substances has proven favorable to achieve thick, crack-free GaN layers. In this paper, numerical modeling of transport and reaction of species is performed to estimate the growth rate of GaN from tile reaction of TMG(trimethly-gallium) and ammonia. GaN growth rate was estimated through the model analysis including the effect of species velocity, thermal convection and chemical reaction, and thermal condition for the uniform deposition was to be presented. The effect of shape and construction of microscopic pattern was also investigated using a simulator to perform surface analysis, and a review was done on the quantitative thickness and shape in making GaN layer on the pattern. Quantitative analysis was especially performed about the shape of reactor geometry, periodicity of pattern and flow conditions which decisively affect the quality of crystal growth. It was found that the conformal deposition could be obtained with the inclination of trench ${\Theta}>125^{\circ}$. The aspect ratio was sensitive to the void formation inside trench and the void located deep in trench with increased aspect ratio.