• ETRI Journal
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• 제27권4호
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• pp.405-410
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• 2005

High quality indium tin oxide (ITO) thin films were grown by pulse laser deposition (PLD) on flexible polyethersulphone (PES) substrates. The electrical, optical, and surface morphological properties of these films were examined as a function of substrate temperature and oxygen pressure. ITO thin films, deposited by PLD on a PES substrate at room temperature and an oxygen pressure of 15 mTorr, have a low electrical resistivity of $2.9{\times}10^{-4}{\Omega}cm$ and a high optical transmittance of 84 % in the visible range. They were used as the anode in organic light-emitting diodes (OLEDs). The maximum electro luminescence (EL) and current density at 100 $cd/m^2$ were 2500 $cd/m^{2}$ and 2 $mA/m^{2}$, respectively, and the external quantum efficiency of the OLEDs was found to be 2.0 %.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.95.1-95.1
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• 2010

Transparent conducting ZnO films were deposited to apply DSSC Substrate on glass substrates at $500^{\circ}C$ by ionbeam-assisted deposition. Crystallinity, microstructure, surface roughness, chemical composition, electrical and optical properties of the films were investigated as a function of deposition parameters such as ion energy, and substrate temperature. The microstructure of the polycrystalline ZnO films on the glass substrate were closely related to the oxygen ion energy, arrival ratio of oxygen to Zinc Ion bombarded on the growing surface. The main effect of energetic ion bombardment on the growing surface of the film may be divided into two categories; 1) the enhancement of adatom mobility at low energetic ion bombardment and 2) the surface damage by radiation damage at high energetic ion bombardment. The domain structure was obtained in the films deposited at 300 eV. With increasing the ion energy to 600 eV, the domain structure was changed into the grain structure. In case of the low energy ion bombardment of 300 eV, the microstructure of the film was changed from the grain structure to the domain structure with increasing arrival ratio. At the high energy ion bombardment of 600 eV, however, the only grain structure was observed. The electrical properties of the deposited films were significantly related to the change of microstructure. The films with the domain structure had larger carrier concentration and mobility than those with the grain structure, because the grain boundary scattering was reduced in the large size domains compared with the small size grains. The optical transmittance of ZnO films was dependent on a surface roughness. The ZnO films with small surface roughness, represented high transmittance in the visible range because of a decreased light surface scattering. By varying the ion energy and arrival ratio, the resistivity and optical transmittance of the films were varied from $1.1{\times}10^{-4}$ to $2.3{\times}10^{-2}{\Omega}cm$ and from 80 to 87%, respectively. The ZnO film deposited at 300 eV, and substrate temperature of $500^{\circ}C$ had the resistivity of $1.1{\times}10^{-4}{\Omega}cm$ and optical transmittance of 85% in visible range. As a result of experiments, we provides a suggestition that ZnO thin Films can be effectively used as the DSSC substrate Materials.

• 한국산학기술학회논문지
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• 제18권3호
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• pp.1-6
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• 2017

태양전지의 셀을 보호하기 위한 커버 글라스에는 반사방지 코팅 및 셀프클리닝과 같은 기능성 코팅이 적용되어왔다. 일반적으로 메조포러스 실리카를 이용한 반사방지 코팅은 빛의 투과를 증가시키며, $TiO_2$ 광촉매 필름은 셀프클리닝 코팅에 적용되어왔다. 본 연구에서는 $SiO_2/TiO_2$ 박막 코팅에 의한 투명 발수 반사방지 및 셀프클리닝 코팅을 sol-gel 공정과 dip-coating 공정으로 글라스 기판 위에 제조하였다. 기능성 코팅의 표면형상은 전계방출 주사전자현미경과 원자힘 현미경으로 분석하였고, 광학적 특성은 UV-visible 분광광도계로 분석하였다. 필름의 발수특성은 접촉각 측정으로 확인하였다. 그 결과 $TiO_2$ 필름은 기판인 슬라이드 글라스와 비슷한 수준의 높은 광 투과율을 나타내었다. 일반적으로 $TiO_2$ 나노입자는 필름에서 반사를 증가시키며, 결과적으로 투과율의 저하를 가져온다. 하지만 본 연구의 $SiO_2/TiO_2$ 박막으로 이루어진 기능성 코팅은 $110^{\circ}$의 접촉각을 나타내었으며, 파장 550 nm에서 기판인 슬라이드 글라스의 투과율보다 2.0% 증가한 93.5%의 광 투과율 특성을 나타내었다.

• 한국재난정보학회 논문집
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• 제17권2호
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• pp.195-205
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• 2021

연구목적: 연안건축 재료의 자외선 반사율과 투과율은 건물의 자외선 방출 및 방출의 주요 요인 중 하나이다. 이 연구에서는 건축 자재의 여러 종류의 자외선 스펙트럼 반사율이 측정되었으며 또한 표면 특성 중에 하나인 명도, 거칠기 및 색도와의 관계에 대해서도 검토 및 제안했다. 연구방법: 본 연구에서는 CIE 분류에 의거하여 자외선영역은 단파장 UV-C (10nm~280nm), 중파장 영역 UV-B (280-315 nm), 장파장 영역 UV-A (315-400nm), 가시광선 영역 (400nm~780nm)으로 정했으며, 연속적으로 측정하기 위하여 분광 광도계를 사용했다. 연구결과: 나무의 경우 반사율은 가시광선역 55-68 %, UV-A ^* 7-12 %, UV-B^* 4-5 %로 나타났다. 벽타일은 가시광선역 18-40 %, UV-A^* 8-20 %, UV-B^* 7-8 % 로 나타났으며, 콘크리트는 가사광선역 37 %, UV-A^* 28 %, UV-B^* 19 %로 나타났다. 결론: 가시광선 반사율에 의해 자외선 반사율을 추정 할 수 있으며, 또한 자외선 차단을 할 때에는 용도에 따라 다양한 재료를 선택하는 것이 중요하다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.367-367
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• 2013

Commercial applications of indium tin oxide (ITO) can be separated into two useful areas. As it is perceived to bear electrical properties and optical transparency at once, its chance to apply to promising fields, usually for an optical device, gets greater in the passing time. ITO is one of the transparent conducting oxides (TCO), and required to carry the relative resistance less than $10^{-3}{\Omega}$/cm and transmittances over 80 % in the visible wavelength of light. Because ITO has considerable refractive index, there exist applications for anti-reflection coatings. Anti-reflection properties require gradual change in refractive index from films to air. Such changes are obtained from film density or nano-clustered fractional void. Glancing angle deposition (GLAD) method is a well known process for adjusting nanostructure of the films. From its shadowing effects, GLAD helps to deposit well-controlled porous films effectively. In this study, we are comparing the reference sample to samples coated with controlled ITO multilayer accumulated by an e-beam evaporation system. At first, the single ITO layer samples are prepared to decide refractive index with ellipsometry. Afterwards, ITO multilayer samples are fabricated and fitted by multilayer ellipsometric model based on single layer data. The structural properties were measured by using atomic force microscopy (AFM), and by scanning X-ray diffraction (XRD) measurements. The ellipsometry was used to determine refractive indices and extinction coefficient. The optical transmittance of the film was investigated by using an ultraviolet-visible (UV-Vis) spectrophotometer.

• Transactions on Electrical and Electronic Materials
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• 제10권5호
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• pp.169-172
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• 2009

The ZnO/CuSn/ZnO (ZCSZ) multilayer films were deposited on polycarbonate substrates using reactive RF and DC magnetron sputtering. The thickness of each layer was 50 nm/5 nm/45 nm, respectively. The ZCSZ films showed a sheet resistance of $44{\Omega}$/Sq, which was an order of magnitude lower than that indium tin oxide (ITO) films. Although the ZCSZ films had a CuSn interlayer that absorbed visible light, both films had similar optical transmittances of 74% in the visible wavelength region. The figure of merit of the ZCSZ films was $1.0{\times}10^{-3}{\Omega}^{-1}$ and was greater than the value of the ITO films, $1.6{\times}10^{-4}{\Omega}^{-1}$. From the X-ray diffraction (XRD) analysis, the ITO films did not show any diffraction peaks, whereas the ZCSZ films showed diffraction peaks for the ZnO (100) and (002) phases. The hardness of the ITO and ZCSZ films were 5.8 and 7.1 GPa, respectively, which were determined using nano-indentation. From these results, the ZCSZ films exhibited greater optoelectrical performance and hardness compared to the conventional ITO films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.351.2-351.2
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• 2014

Indium tin oxide (ITO) has a lot of variations of its properties because it is basically in an amorphous state. Therefore, the differences in composition ratio of ITO can result in alteration of electrical properties. Normally, ITO is considered as transparent conductive oxide (TCO), possessing excellent properties for the optical and electrical devices. Quantitatively, TCO has transparency over 80 percent within the range of 380nm to 780nm, which is visible light although its specific resistance is less than $10-3{\Omega}/cm$. Thus, the solar cell is the best example for which ITO has perfectly matching profile. In addition, when ITO is used as transparent conductive electrode, this material essentially has to have a proper work function with contact materials. For instance, heterojunction with intrinsic thin layer (HIT) solar cell could have both front ITO and backside ITO. Because each side of ITO films has different type of contact materials, p-type amorphous silicon and n-type amorphous silicon, work function of ITO has to be modified to transport carrier with low built-in potential and Schottky barrier, and approximately requires variation from 3 eV to 5 eV. In this study, we examine the change of work function for different sputtering conditions using ultraviolet photoelectron spectroscopy (UPS). Structure of ITO films was investigated by spectroscopic ellipsometry (SE) and scanning electron microscopy (SEM). Optical transmittance of the films was evaluated by using an ultraviolet-visible (UV-Vis) spectrophotometer

• Current Photovoltaic Research
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• 제4권1호
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• pp.25-29
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• 2016

$Eu^{3+}$-activated $MgMoO_4$ phosphor thin films were grown at $400^{\circ}C$ on quartz substrates by radio-frequency magnetron sputter deposition from a 15 mol% Eu-doped $MgMoO_4$ target. After the deposition, the phosphor thin films were annealed at several temperatures for 30 min in air. The influence of thermal annealing temperature on the structural and optical properties of $MgMoO_4:Eu^{3+}$ phosphor thin films was investigated by using X-ray diffraction (XRD), photoluminescence (PL), and ultraviolet-visible spectrophotometry. The transmittance, optical band gap, and intensities of the luminescence and excitation spectra of the thin films were found to depend on the thermal annealing temperature. The XRD patterns indicated that all the thin films had a monoclinic structure with a main (220) diffraction peak. The highest average transmittance of 91.3% in the wavelength range of 320~1100 nm was obtained for the phosphor thin film annealed at $800^{\circ}C$. At this annealing temperature the optical band gap energy was estimated as 4.83 eV. The emission and excitation spectra exhibited that the $MgMoO_4:Eu^{3+}$ phosphor thin films could be effectively excited by near ultraviolet (281 nm) light, and emitted the dominant 614 nm red light. The results show that increasing RTA temperature can enhance $Eu^{3+}$ emission and excitation intensity.

• 한국결정성장학회지
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• 제29권3호
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• pp.123-131
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• 2019

본 연구에서는 $TiO_{2-x}$ 산화물 박막공정을 이용한 유해 자외선차단 투명 유연 소재를 개발하고자한다. 자외선 차단 특성: 자외선 파장대의 315 nm 차단율이 95 % 이상이면서, 자외선차단특성을 갖으면서 투명성을 높인 가시광선 투과율 78 % 이상(550 nm에서 전광투과율)의 시료를 만드는 공정기술을 개발하고자 하였다. 본 연구 결과로 고성능 자외선차단 박막의 유연 소자 공정조건을 확립하고, 이질성 특성의 투명 유연 소자의 혼합형 설계와 시장 요구에 다양하게 대응이 가능한 복합 증착 기술 정립, 롤투롤(roll-to-roll) 연속 공정의 실현 및 장비, 공정 국산화 기술 확립으로써 관련 산업으로의 기술 파급 효과가 클 것으로 사료된다.

• 한국세라믹학회지
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• 제53권3호
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• pp.338-342
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• 2016

ZnO thin film co-doped with F and Al was prepared on a glass substrate via simple non-alkoxide sol-gel spin coating. For a fixed F concentration, the addition of Al co-dopant was shown to reduce the resistivity mainly due to an increase in electrical carrier density compared with ZnO doped with F only, especially after the second post-heat-treatment in a reducing environment. There was no effective positive contribution to the reduction in resistivity due to the mobility enhancement by the addition of Al co-dopant. Optical transmittance of the ZnO thin film co-doped with F and Al in the visible light domain was shown to be higher than that of the ZnO thin film doped with F only.