• Current Optics and Photonics
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• v.7 no.1
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• pp.38-46
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• 2023

Optical Fourier-domain reflectometry (OFDR) sensors have been widely used to measure distances with high resolution and speed in a noncontact state. In the electroplating process of a printed circuit board, it is critically important to monitor the copper-plating thickness, as small deviations can lead to defects, such as an open or short circuit. In this paper we employ a phase-based OFDR sensor for in situ relative distance sensing of a sample with nanometer-scale resolution, during electroplating. We also develop an optical-path difference (OPD)-regulated sensing probe that can maintain a preset distance from the sample. This function can markedly facilitate practical measurements in two aspects: Optimal distance setting for high signal-to-noise ratio OFDR sensing, and protection of a fragile probe tip via vertical evasion movement. In a sample with a centimeter-scale structure, a conventional OFDR sensor will probably either bump into the sample or practically out of the detection range of the sensing probe. To address this limitation, a novel OPD-regulated OFDR system is designed by combining the OFDR sensing probe and linear piezo motors with feedback-loop control. By using multiple OFDR sensors, it is possible to effectively monitor copper-plating thickness in situ and uniformize it at various positions.

• Journal of the Korea Society of Computer and Information
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• v.16 no.6
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• pp.1-10
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• 2011

In designing multi-core processors, interconnection delay is one of the major constraints in performance improvement. To solve this problem, the 3-dimensional integration technology has been adopted in designing multi-core processors. The 3D multi-core architecture can reduce the physical wire length by stacking cores vertically, leading to reduced interconnection delay and reduced power consumption. However, the power density of 3D multi-core architecture is increased significantly compared to the traditional 2D multi-core architecture, resulting in the increased temperature of the processor. In this paper, the floorplan methods which change the forms of vertical placement of the core and the level-2 cache are analyzed to solve the thermal problems in 3D multi-core processors. According to the experimental results, it is an effective way to reduce the temperature in the processor that the core and the level-2 cache are stacked adjacently. Compared to the floorplan where cores are stacked adjacently to each other, the floorplan where the core is stacked adjacently to the level-2 cache can reduce the temperature by 22% in the case of 4-layers, and by 13% in the case of 2-layers.

• The KIPS Transactions:PartA
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• v.17A no.6
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• pp.265-274
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• 2010

As the process technology scales down and integration densities continue to increase, interconnection has become one of the most important factors in performance of recent multi-core processors. Recently, to reduce the delay due to interconnection, 3D architecture has been adopted in designing multi-core processors. In 3D multi-core processors, multiple cores are stacked vertically and each core on different layers are connected by direct vertical TSVs(through-silicon vias). Compared to 2D multi-core architecture, 3D multi-core architecture reduces wire length significantly, leading to decreased interconnection delay and lower power consumption. Despite the benefits mentioned above, 3D design technique cannot be practical without proper solutions for hotspots due to high temperature. In this paper, we propose three floorplan schemes for reducing the peak temperature in 3D multi-core processors. According to our simulation results, the proposed floorplan schemes are expected to mitigate the thermal problems of 3D multi-core processors efficiently, resulting in improved reliability. Moreover, processor performance improves by reducing the performance degradation due to DTM techniques. Power consumption also can be reduced by decreased temperature and reduced execution time.

• Journal of the Korean Society for Precision Engineering
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• v.17 no.2
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• pp.80-88
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• 2000

This paper presents a method to optimize the bump steer characteristics (the change of toe angle with vertical wheel travel) with respect to hard points in the double wishbone front suspension of the four-wheel-drive vehicle using the design of experiment, multibody dynamics simulation, and optimum design program. Front and rear suspensions are modeled as the interconnection of rigid bodies by kinematic joints and force elements using DADS. The design variables with respect to the kinematic characteristics are obtained through the experimental design sensitivity analysis. An object function is defined as the area of absolute differences between the desired and experimental toe angle. By the design of experiment and regression analysis, the regression model function of bump steer characteristics is extracted. The design variables that make the toe angle optimized are selected using the optimum design program DOT. The lane change simulations and tests of the full vehicle models are implemented to evaluate the improvement of vehicle handling performances by the optimization of front bump steer characteristics. The results of the lane change simulations show that the vehicle with optimized bump steer has the weaker understeer tendency than the vehicle with initial bump steer.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.30-32
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• 2005

This paper reports on an LTCC-based packaging method using Au/Sn eutectic bonding process for RF MEMS applications. The proposed packaging structure was realized by a micromachining technology. An LTCC substrate consists of metal filled vertical via feedthroughs for electrical interconnection and Au/Sn sealing rim for eutectic bonding. The LTCC capping substrate and the glass bottom substrate were aligned and bonded together by a flip-chip bonding technology. From now on, shear strength and He leak rate will be measured then the fabricated package will be compared with the LTCC package using BCB adhesive bonding method which has been researched in our previous work.

• Korean Journal of Metals and Materials
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• v.48 no.11
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• pp.1028-1034
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• 2010

In the development of 3D package, through silicon via (TSV) formation technology by using deep reactive ion etching (DRIE) is one of the key processes. We performed the Bosch process, which consists of sequentially alternating the etch and passivation steps using $SF_6$ with $O_2$ and $C_4F_8$ plasma, respectively. We investigated the effect of changing variables on vias: the gas flow time, the ratio of $O_2$ gas, source and bias power, and process time. Each parameter plays a critical role in obtaining a specified via profile. Analysis of via profiles shows that the gas flow time is the most critical process parameter. A high source power accelerated more etchant species fluorine ions toward the silicon wafer and improved their directionality. With $O_2$ gas addition, there is an optimized condition to form the desired vertical interconnection. Overall, the etching rate decreased when the process time was longer.

• Journal of the Korea Society of Computer and Information
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• v.17 no.6
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• pp.1-11
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• 2012

As the process technology scales down, multi-core processors cause serious problems such as increased interconnection delay, high power consumption and thermal problems. To solve the problems in 2D multi-core processors, researchers have focused on the 3D multi-core processor architecture. Compared to the 2D multi-core processor, the 3D multi-core processor decreases interconnection delay by reducing wire length significantly, since each core on different layers is connected using vertical through-silicon via(TSV). However, the power density in the 3D multi-core processor is increased dramatically compared to that in the 2D multi-core processor, because multiple cores are stacked vertically. Unfortunately, increased power density causes thermal problems, resulting in high cooling cost, negative impact on the reliability. Therefore, temperature should be considered together with performance in designing 3D multi-core processors. In this work, we analyze the temperature of the cache in quad-core processors varying cache organization. Then, we propose the low-temperature cache organization to overcome the thermal problems. Our evaluation shows that peak temperature of the instruction cache is lower than threshold. The peak temperature of the data cache is higher than threshold when the cache is composed of many ways. According to the results, our proposed cache organization not only efficiently reduces the peak temperature but also reduces the performance degradation for 3D quad-core processors.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.7
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• pp.131-137
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• 2016

In this paper, we analyze the impedance analysis of vertical interconnection through-silicon vias (TSV) that is being studied for the purpose of improving the degree of integration and an electric feature in 3D IC. Also, it is to improve the performance and the degree of integration of the three-dimensional integrated circuit system which can exceed the limits of conventional two-dimensional a IC. In the future, TSV technology in full-chip 3-dimensional integrated circuit system design is very important, and a study on the electrical characteristics of the TSV for high-density and high-bandwidth system design is very important. Therefore, we study analyze the impedance influence of the TSV in accordance with the distance and frequency in a multiple TSV-to-TSV for the purpose of designing a full-chip three-dimensional IC. The results of this study also are applicable to semiconductor process tools and designed for the manufacture of a full-chip 3D IC.

• Journal of Sensor Science and Technology
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• v.29 no.5
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• pp.354-359
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• 2020

The high vacuum hermetic sealing technique ensures excellent performance of MEMS resonators. For the high vacuum hermetic sealing, the customization of anodic bonding equipment was conducted for the glass/Si/glass triple-stack anodic bonding process. Figure 1 presents the schematic of the MEMS resonator with triple-stack high-vacuum anodic bonding. The anodic bonding process for vacuum sealing was performed with the chamber pressure lower than 5 × 10^-6 mbar, the piston pressure of 5 kN, and the applied voltage was 1 kV. The process temperature during anodic bonding was 400 ℃. To maintain the vacuum condition of the glass cavity, a getter material, such as a titanium thin film, was deposited. The getter materials was active at the 400 ℃ during the anodic bonding process. To read out the electrical signals from the Si resonator, a vertical feed-through was applied by using through glass via (TGV) which is formed by sandblasting technique of cap glass wafer. The aluminum electrodes was conformally deposited on the via-hole structure of cap glass. The TGV process provides reliable electrical interconnection between Si resonator and aluminum electrodes on the cap glass without leakage or electrical disconnection through the TGV. The fabricated MEMS resonator with proposed vacuum packaging using three-layer anodic bonding process has resonance frequency and quality factor of about 16 kHz and more than 40,000, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.29-36
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• 2008

In this paper, mechanical reliability issues of copper through-wafer interconnections are investigated numerically and experimentally. A hermetic wafer level packaging for MEMS devices is developed. Au-Sn eutectic bonding technology is used to achieve hermetic sealing, and the vertical through-hole via filled with electroplated copper for the electrical connection is also used. The MEMS package has the size of $1mm{\times}1mm{\times}700{\mu}m$. The robustness of the package is confirmed by several reliability tests. Several factors which could induce via hole cracking failure are investigated such as thermal expansion mismatch, via etch profile, and copper diffusion phenomenon. Alternative electroplating process is suggested for preventing Cu diffusion and increasing the adhesion performance of the electroplating process. After implementing several improvements, reliability tests were performed, and via hole cracking as well as significant changes in the shear strength were not observed. Helium leak testing indicated that the leak rate of the package meets the requirements of MIL-STD-883F specification.