• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.1
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• pp.76-83
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• 2000

A 2-pole tunable bandpass filter was design and fabricated using ceramic coaxial resonators and varactor diodes for UHF band. By inspection of frequency characteristics of the T-and $\pi$-type inverter equivalent circuits, we can design a two-pole tunable BPF with only two varactors. The measured data of the filter show 800 MHz-900 MHz tunable center frequency range, 4.5 dB insertion loss, 0.5 dB passband ripple and at least 15 dB return loss, which agree well with the simulated results.

• Journal of electromagnetic engineering and science
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• v.12 no.2
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• pp.166-170
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• 2012

This paper presents a tunable composite right/left-handed (CRLH) delay line for a delay line discriminator that linearizes modulated frequency sweep in a frequency modulated continuous wave (FMCW) radar transmitter. The tunable delay line consists of 8 cascaded unit cells with series varactor diodes and shunt inductors. The reverse bias voltage of the varactor diode controlled the group delay through its junction capacitance. The measured results demonstrate a group delay of 8.12 ns and an insertion loss of 4.5 dB at 250 MHz, while a control voltage can be used to adjust the group delay by approximately 15 ns. A group delay per unit cell of approximately 1 ns was obtained, which is very large when compared with previously published results. This group delay can be used effectively in FMCW radar transmitters.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.11
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• pp.54-59
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• 2007

In this paper, broadband voltage-controlled oscillator (VCO) using electronically controlled metamaterial transmission line based on varactor-loaded split-ring resonator (VLSRR) is presented. First, it is demonstrated that VLSRR coupled to microstrip line can lead to metamaterial transmission line with tuning capability. The negative effective permeability is provided by the VLSRR in a narrow band above the resonant frequency, which can be bias controlled by virtue of the presence of varactor diodes. The VCO with 1.8 V power supply has phase noise of $-108.84\;{\sim}\;-106.84\;dBc/Hz$ @ 100 Hz in the tuning range, $5.47\;{\sim}\;5.84\;GHz$. The figure of merit (FOM) called power-frequency-tuning-normalized (PFTN) is 20.144 dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.8
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• pp.688-693
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• 2009

In this paper, a half wave-length microstrip antenna was proposed to be able to continuously tune the resonant frequency in the stated area of UHF ISM band. By loading varactor diodes at both edges of the half wavelength antenna, where the electric field is the strongest, and varying the voltage in order to tune the electrical resonance length continuously, it is possible to automatically recover the resonant frequency and input impedance shifted by surrounding environment. When the microstrip antenna(center resonant frequency: 425 MHB) was tested, by adjusting the each voltages of varactor diodes from DC 0.6 to BC 3.0 volts, the resonant frequency under 20 dB return loss was varied 385 to 465 MHz. The peak gain was -0.2 dBd and return loss -10 dB bandwidth was 3.3 MHz(0.8 %).

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.5
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• pp.521-526
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• 2003

This paper describes performance data and design information on a reflection-type analog phase shifter used in Ka-band. Arranging a couple of GaAs hyperabrupt junction varactor diode parallel in a circuit, and applying reactance matching method accordingly, it is possible to 831 a large the phase shift. Design equation is formulated theoretically. Since the assembly process is important in Ka-band, this paper also includes the assembly process that is essential to minimize the generation of parasitic elements during the assembly process. It is obtained variable phase shift 220$^{\circ}$${\pm}$7$^{\circ}$ and insertion loss 5 dB${\pm}$1 dB as a measured result larger than the existing figure in Ka-band.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.6
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• pp.1196-1200
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• 2009

This paper proposed a tunable band pass filter. It is two-poles direct capacitive coupled resonator band pass filter which the capacitors of parallel resonators are changed by varactor diodes. The DC bias controls to change the value of capacitance in the parallel resonator for tunning the pass band. To validate the proposed design method, we fabricated the band pass filter which has tunable center frequency from 200MHz to 245MHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.4 s.95
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• pp.345-350
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• 2005

An X-band push-push VCO for low cost applications is proposed. The designed push-push oscillator achieves a wide tuning range in the X-band by the collector bias tuning instead of extra varactor diodes. The measurement shows a wide tuning bandwidth of $900\;\cal{MHz}\;from\;10.9\;\cal{GHz}\;to\;11.8\;\cal{GHz}$ with a drain bias voltage varying from 4 to 9 V, excellent fudamental suppression of $-30\;\cal{dBc}$ and good phase noise of $-115\;\cal{dBc/Hz}\;@\;1\;\cal{MHz}$ offset.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.5
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• pp.1035-1039
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• 2012

In this paper, we developed a 94 GHz waveguide VCO(voltage controlled oscillator) using a GaAs-based Gunn diode and a varactor diode. The cavity is designed for fundamental mode at 47 GHz and operated at second harmonic of 94 GHz. Bias posts for diodes operate as LPF(low pass filter) and resonator. The fabricated waveguide VCO achieves an oscillation bandwidth of 760 MHz. Output power is from 12.61 to 15.26 dBm and phase noise is -101.13 dBc/Hz at 1 MHz offset frequency from the carrier.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2001.11a
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• pp.267-271
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• 2001

다이오드의 소신호 및 대신호 파라미터 추출은 DC 해석, 외부 기생 소자 추출, 마지막으로 5-파라미터에 의한 내부소자 추출로 이루어진다. DC IV-곡선과 S-파라미터의 curve-fitting으로 내부 파라미터를 구하였고 외부 기생소자는 바이어스에 따라 변하지 성질을 이용하였다. 사용된 소자는 Schottky diode는 SIEMENS사의 BAS125를, Varactor diode는 SONY사의 1t362를, PIN diode는 Hitachi사의 HVM14S를 모델로 사용하였다. 실측을 위해 사용된 소자는 각각 HP사의 HSMS-2822, SONY사의 1t362, HP사의 HSMP-3834을 이용하여 측정하였다.

• Journal of electromagnetic engineering and science
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• v.5 no.1
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• pp.8-13
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• 2005

The InGaP/GaAs hetero-junction bipolar transistor(HBT) monolithic voltage-controlled dielectric resonator oscillator(VCDRO) is first demonstrated for a Ku-band low noise block down-converter(LNB) system. The on-chip voltage control oscillator core employing base-collector(B-C) junction diodes is proposed for simpler frequency tuning and easy fabrication instead of the general off-chip varactor diodes. The fabricated VCDRO achieves a high output power of 6.45 to 5.31 dBm and a wide frequency tuning range of ]65 MHz( 1.53 $\%$) with a low phase noise of below -95dBc/Hz at 100 kHz offset and -115 dBc/Hz at ] MHz offset. A]so, the InGaP/GaAs HBT monolithic DRO with the same topology as the proposed VCDRO is fabricated to verify that the intrinsic low l/f noise of the HBT and the high Q of the DR contribute to the low phase noise performance. The fabricated DRO exhibits an output power of 1.33 dBm, and an extremely low phase noise of -109 dBc/Hz at 100 kHz and -131 dBc/Hz at ] MHz offset from the 10.75 GHz oscillation frequency.