• 제목/요약/키워드: Vapor-phase oxidation

검색결과 39건 처리시간 0.021초

The Influences of Water Vapor/Hydrogen Ratio, Gas-Flow Rate and Antimony on the Surface Oxidation of Trip Steels

  • Kwon, Youjong;Zhu, Jingxi;Sohn, Il-Ryong;Sridhar, Seetharaman
    • Corrosion Science and Technology
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    • 제10권6호
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    • pp.189-193
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    • 2011
  • In the current paper, we are reporting the results from an investigation of the surface and sub-surface oxidation of a TRIP steel containing 2 wt.% Mn and 0.5 wt.% Al with and without 0.03 wt.% Sb. The oxidizing conditions in the gas were successively varied in terms of the linear gas flow-rate and dew-point, from conditions were gas-phase mass transport limited conditions prevailed, to those were solid state processes became the rate determining conditions. It was found, that at sufficient low oxidizing conditions (defined as flow-rate/dew-point), the metal surfaces were clear of any external oxides, and as the oxidizing conditions were increased, Mn- and Si- oxide nodules formed along with magnetite. As the oxidizing conditions were increased further, a dense magnetite layer was present. The limits of the various regions were experimentally quantified and a proposed hypothesis for their occurrences is presented. No obvious effect of Sb was noted in this micro-structural research of the oxides that results from the various conditions investigated in this study.

FS-GaN을 열산화하여 제작된 Beta-Ga2O3 박막의 특성 (Properties of Beta-Ga2O3 Film from the Furnace Oxidation of Freestanding GaN)

  • 손호기;이영진;이미재;김진호;전대우;황종희;이혜용
    • 한국전기전자재료학회논문지
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    • 제30권7호
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    • pp.427-431
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    • 2017
  • In this paper, we discuss ${\beta}-Ga_2O_3$ thin films that have been grown on freestanding GaN (FS-GaN) using furnace oxidation. A GaN template was grown by horizontalhydride vapor phase epitaxy (HVPE), and FS-GaN was fabricated using the laser lift off (LLO) system. To obtain ${\beta}-Ga_2O_3$ thin film, FS-GaN was oxidized at $900{\sim}1,100^{\circ}C$. Surface and cross-section of prepared ${\beta}-Ga_2O_3$ thin films were observed by field emission scanning electron microscopy (FE-SEM). The single crystal FS-GaNs were changed to poly-crystal ${\beta}-Ga_2O_3$. The oxidized ${\beta}-Ga_2O_3$ thin film at $1,100^{\circ}C$ was peel off from FS-GaN. Next, oxidation of FS-GaNwas investigated for 0.5~12 hours with variation of the oxidation time. The thicknesses of ${\beta}-Ga_2O_3$ thin films were measured from 100 nm to 1,200 nm. Moreover, the 2-theta XRD result indicated that (-201), (-402), and (-603) peaks were confirmed. The intensity of peaks was increased with increased oxidation time. The ${\beta}-Ga_2O_3$ thin film was generated to oxidize FS-GaN.

Incorporation of Titanium into H-ZSM-5 Zeolite via Chemical Vapor Deposition: Effect of Steam Treatment

  • Xu, Cheng-Hua;Jin, Tai-Huan;Jhung, Sung-Hwa;Hwang, Jin-Soo;Chang, Jong-San;Qiu, Fa-Li;Park, Sang-Eon
    • Bulletin of the Korean Chemical Society
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    • 제25권5호
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    • pp.681-686
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    • 2004
  • Ti-ZSM-5 prepared by secondary synthesis, from the reaction of H-ZSM-5 with vapor phase $TiCl_4$, was characterized with several physicochemical techniques including FT-IR and UV/VIS-DRS. It was found that zeolite structure, surface area and pore volume did not change, and the framework aluminum could not be replaced by titanium atom during the secondary synthesis of Ti-ZSM-5. The incorporation of titanium into the framework might be due to reaction of $TiCl_4$with the silanol groups associated with defects or surface sites. The formation of extra-framework titanium could not be avoided, unless the samples were further treated by water vapor at 550 $^{\circ}C$ or higher temperature. High temperature steam treatment of Ti-ZSM-5 prepared by chemical vapor deposition with $TiCl_4$was efficient to prevent the formation of non-framework titanium species. Ti-ZSM-5 zeolites prepared in this work contained only framework titanium species and exhibited improved catalytic property close to TS-1 prepared by hydrothermal synthesis.

ZnO thin films with Cu, Ga and Ag dopants prepared by ZnS oxidation in different ambient

  • Herrera, Roberto Benjamin Cortes;Kryshtab, Tetyana;Andraca Adame, Jose Alberto;Kryvko, Andriy
    • Advances in nano research
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    • 제5권3호
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    • pp.193-201
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    • 2017
  • ZnO, ZnO: Cu, Ga, and ZnO: Cu, Ga, Ag thin films were obtained by oxidization of ZnS and ZnS: Cu, Ga films deposited onto glass substrates by electron-beam evaporation from ZnS and ZnS: Cu, Ga targets and from ZnS: Cu, Ga film additionally doped with Ag by the closed space sublimation technique at atmospheric pressure. The film thickness was about $1{\mu}m$. The oxidation was carried out at $600-650^{\circ}C$ in air or in an atmosphere containing water vapor. Structural characteristics were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). Photoluminescence (PL) spectra of the films were measured at 30-300 K using the excitation wavelengths of 337, 405 and 457.9 nm. As-deposited ZnS and ZnS: Cu, Ga films had cubic structure. The oxidation of the doped films in air or in water vapors led to complete ZnO phase transition. XRD and AFM studies showed that the grain sizes of oxidized films at wet annealing were larger than of the films after dry annealing. As-deposited doped and undoped ZnS thin films did not emit PL. Shape and intensity of the PL emission depended on doping and oxidation conditions. Emission intensity of the films annealed in water vapors was higher than of the films annealed in the air. PL of ZnO: Cu, Ga films excited by 337 nm wavelength exhibits UV (380 nm) and green emission (500 nm). PL spectra at 300 and 30 K excited by 457.9 and 405 nm wavelengths consisted of two bands - the green band at 500 nm and the red band at 650 nm. Location and intensities ratio depended on the preparation conditions.

유기금속 화학기상증착법을 이용한 TiO2 나노선 제조 (Synthesis of TiO2 Nanowires by Metallorganic Chemical Vapor Deposition)

  • 허훈회;웬티깅화;임재균;김길무;김의태
    • 한국재료학회지
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    • 제20권12호
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    • pp.686-690
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    • 2010
  • $TiO_2$ nanowires were self-catalytically synthesized on bare Si(100) substrates using metallorganic chemical vapor deposition. The nanowire formation was critically affected by growth temperature. The $TiO_2$ nanowires were grown at a high density on Si(100) at $510^{\circ}C$, which is near the complete decomposition temperature ($527^{\circ}C$) of the Ti precursor $(Ti(O-iPr)_2(dpm)_2)$. At $470^{\circ}C$, only very thin (< $0.1{\mu}m$) $TiO_2$ film was formed because the Ti precursor was not completely decomposed. When growth temperature was increased to $550^{\circ}C$ and $670^{\circ}C$, the nanowire formation was also significantly suppressed. A vaporsolid (V-S) growth mechanism excluding a liquid phase appeared to control the nanowire formation. The $TiO_2$ nanowire growth seemed to be activated by carbon, which was supplied by decomposition of the Ti precursor. The $TiO_2$ nanowire density was increased with increased growth pressure in the range of 1.2 to 10 torr. In addition, the nanowire formation was enhanced by using Au and Pt catalysts, which seem to act as catalysts for oxidation. The nanowires consisted of well-aligned ~20-30 nm size rutile and anatase nanocrystallines. This MOCVD synthesis technique is unique and efficient to self-catalytically grow $TiO_2$ nanowires, which hold significant promise for various photocatalysis and solar cell applications.

Effective Silicon Oxide Formation on Silica-on-Silicon Platforms for Optical Hybrid Integration

  • Kim, Tae-Hong;Sung, Hee-Kyung;Choi, Ji-Won;Yoon, Ki-Hyun
    • ETRI Journal
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    • 제25권2호
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    • pp.73-80
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    • 2003
  • This paper describes an effective method for forming silicon oxide on silica-on-silicon platforms, which results in excellent characteristics for hybrid integration. Among the many processes involved in fabricating silica-on-silicon platforms with planar lightwave circuits (PLCs), the process for forming silicon oxide on an etched silicon substrate is very important for obtaining transparent silica film because it determines the compatibility at the interface between the silicon and the silica film. To investigate the effects of the formation process of the silicon oxide on the characteristics of the silica PLC platform, we compared two silicon oxide formation processes: thermal oxidation and plasma-enhanced chemical vapor deposition (PECVD). Thermal oxidation in fabricating silica platforms generates defects and a cristobalite crystal phase, which results in deterioration of the optical waveguide characteristics. On the other hand, a silica platform with the silicon oxide layer deposited by PECVD has a transparent planar optical waveguide because the crystal growth of the silica has been suppressed. We confirm that the PECVD method is an effective process for silicon oxide formation for a silica platform with excellent characteristics.

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GaAs 기판 위에 EDMIn과 TBP로부터 성장되고 양극산화 처리된 InP Schottky Diode (Anodically Oxidized InP Schottky Diodes Grown From EDMIn and TBP on GaAs Substrates)

  • 유충현
    • 한국전기전자재료학회논문지
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    • 제16권6호
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    • pp.471-476
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    • 2003
  • Au/oxide/n-InP Schottky diodes were fabricated from heteroepitaxial InP layers grown on GaAs substrates by the metalorganic vapor phase epitaxy (MOVPE) method from a new combination of source materials: ethyldimethylindium (EDMIn) and tertiarybutylphosphine (TBP). Anodic oxidation technique by using a solution of 10 g of ammonium pentaborate in 100 cc of ethylene glycole as the electrolyte was used to deposit a thin oxide layer. The barrier heights determined from three different techniques, current-voltage (I-V) measurements at room temperature and in the temperature range of 273 K - 373 K, and room temperature capacitance-voltage (C-V) measurements are in good agreement, 0.7 - 0.9 eV which is considerably high as compared to the 0.45 - 0.55 eV in Au/n-InP Schottky diode without a Passivation layer. The ideality factors of 1.1 - 1.3 of the Schottky diodes were also determined from the I-Y characteristics. Deep level transient spectroscopy (DLTS) studies revealed only one shallow electron state at 92.6 meV below the bottom of the conduction band and no deep state in the heteroepitaxial InP layers grown from EDMIn and TBP.

Remedation of petroleum impacted filled land using of various in situ technology

  • 안훈기;김재형;고경연;서형기;임은진
    • 한국지하수토양환경학회:학술대회논문집
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    • 한국지하수토양환경학회 2004년도 임시총회 및 추계학술발표회
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    • pp.286-289
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    • 2004
  • On site, In situ soil remediation technologies are very important among the remediation technologies and in general efficiency of these technologies are turned to site characterization and environmental condition. specially using of only one technology has so many limitation factors. for example, existing state of tailing and channeling and so on. actually, filled land have high concentration cation exchange capacity because of existence in abundance soil organic matter. Therefore we used various on site in Situ technologies by phase for overcome the limitation factors. Target site is petroleum (diesel) impacted filled land and using technologies are SVE(Soil Vapor Extraction), BV(Bioventing), Bioremediation, Soil flushing, Chemical oxidation.

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동시-공증발 기상 중합을 이용한 전도성 PEDOT-PSMA 박막 제조 (Preparation of Conductive PEDOT-PSMA Hybrid Thin Films Using Simultaneous Co-vaporized Vapor Phase Polymerization)

  • ;임진형
    • 공업화학
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    • 제29권3호
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    • pp.330-335
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    • 2018
  • 서로 다른 중합 메카니즘(산화 커플링 중합 및 라디칼 중합)을 가지는 둘 이상의 단량체를 동시에 공-증발 기상 중합(SC-VPP)을 하여 유기-유기 전도성 복합 박막을 제조하는 새로운 접근법을 보고한다. 본 연구에서는 SC-VPP 공정을 통해 poly(3,4-ethylenedioxythiophene)(PEDOT)와 poly(styrene-co-maleic anhydride)(PSMA)로 구성된 PEDOT-PSMA 복합 박막을 제조하였다. 유기-유기 전도성 복합체 박막의 제조는 FT-IR 및 $1^H-NMR$ 분석을 통해 확인되었다. 전자주사현미경을 통한 표면 형태학 분석으로 PEDOT-PSMA 박막이 PEDOT 박막보다 좀 더 거친 표면을 보였다. 이것은 소수성 특성을 가지는 PEDOT과 친수성 특성기를 가지는 PSMA와의 좋지 않은 상용성 때문이라고 생각된다. 따라서 PEDOT-PSMA는 PEDOT보다 낮은 전기 전도도를 나타내었지만 약염기인 2-ethyl-4-methyl imidazole을 첨가하면 크게 개선되었다. PEDOT-PSMA의 접촉각은 PEDOT의 경우 $62^{\circ}$에 비해 약 $50^{\circ}$로 친수성이 증가하였고, 이는, PSMA가 가지는 카르보닐기에 의한 것이라 판단된다. 제안된 SC-VPP 기반 유기-유기 하이브리드 박막 제조 경로를 통하여 다양한 고분자 전도성 박막의 표면 특성(친수특성, 기계적 강도, 광학특성 및 표면 거칠기) 등을 제어할 수 있다고 판단한다.

금속산화물과 CH4를 이용한 2단계 열화학 사이클 (Two-step thermochemical cycle using metal oxide and CH4)

  • 이상호;박영철;김종원;심규성;정광덕
    • 한국수소및신에너지학회논문집
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    • 제12권3호
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    • pp.219-229
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    • 2001
  • Hydrogen production by a 2-step water-splitting thermochemical cycle using metal oxides (ferrites) redox pairs and $CH_4$ have been studied in this experiment. The ferrites were reacted with $CH_4$ at $700{\sim}800^{\circ}C$ to produce CO, $H_2$ and various reduced phases (reduction step); these were then reoxidized with water vapor to generate $H_2$ in water-splitting step (oxidation step) at $600{\sim}700^{\circ}C$. The reduced ferrites, Ni-FeO and Ni-Fe alloy showed respectively different reactivity for $H_2$ formation from $H_2O$. In reduction reaction at $800^{\circ}C$, carbon was deposited on surface of Ni-ferrite due to $CH_4$ decomposition. This reduced phase containing carbon, which was taken quite different feature from other phase, produced $H_2$, CO, $CO_2$ by reacting with $H_2O$ at $600^{\circ}C$. The amount of $H_2$ evolved using reduced phase containing carbon was much higher than that of other phase.

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