• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.1-6
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• 1998

The influence of the order-disorder structural transition on the magnetic and mageto-optical, and transport properties of Fe-Al and Co-Al alloy films has been investigated. The disordered states in the alloy films were prepared by vapor quenching deposition on glass substrates cooled by liquid nitrogen. The experimental study of the magento-optical properties of the ordered and disordered Fe-Al and Co-Al alloy films has been carried out in 1.05-5.0 eV energy range at room temperature. The transport properties have been measured in 2-300K temperature range with and without magnetic field of 0.5T. The influence of the order-disorder structural transition on the magnetic and magneto-optical properties was discussed by using the effective medium approximation and the structural defect approach. That on the temperature dependence of the resistivity was analyzed in a framework of the partial localization of the electronic states and the variable range hopping conductivity.

• Progress in Superconductivity
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• v.9 no.1
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• pp.5-10
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• 2007

We prepared four different $MgB_2$ films on $Al_2O_3$ by hybrid physical chemical vapor deposition method with thicknesses ranging from $0.65\;{\mu}m$ to $1.2\;{\mu}m$. X-ray diffraction patterns confirm that all the $MgB_2$ films are c-axis oriented perpendicular to $Al_2O_3$ substrates. The superconducting onset temperature of $MgB_2$ films were between 39.39K and 40.72K. The residual resistivity ratio of the $MgB_2$ films was in the range between 3.13 and 37.3. We measured the angle dependence of critical current density ($J_c$) and resistivity, and determined the upper critical field ($H_{c2}$) from the temperature dependence of the resistivity curves. The anisotropy ratios defined as the ratio of the $H_{c2}$ parallel to the ab-plane to that perpendicular to the ab-plane were in the range of 2.13 to 4.5 and were increased as the temperature was decreased. Some samples showed increase of $J_c$ and decrease of resistivity when a magnetic field in applied parallel to the c-axis. We interpret this angle dependence in terms of enhanced flux pinning due to columnar growth of $MgB_2$ along the c-axis.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.7
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• pp.106-115
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• 2002

Growth characteristics of micro carbon structures fabricated by laser-assisted chemical vapor deposition are studied. Argon ion laser and ethylene were used as the energy source and reaction gas, respectively, to grow micro carbon rod through pyrolytic decomposition of the reaction gas. Experiments were performed at various conditions to investigate the influence of process parameters on growth characteristics such as the diameter or growth rate of the micro carbon rod with respect to reaction gas pressure and incident laser power. Reaction gas pressure in experiments ranges from 200 to 600Torr and the incident laser power from 0.3 to 3.8W. For these conditions, the diameter of the rod increases linearly with respect to the laser power but is almost independent of the reaction gas pressure. Growth rate of the rod changes little with gas pressure when the laser power remains below IW. For a constant reaction gas pressure, the growth rate increase with Increasing laser power, but the rate of increase decreases gradually, implying that the chemical vapor deposition condition changes from a kinetically-limited regime to a mass-transport-limited regime. When the carbon rod was grown at near threshold laser power, a very smooth surface is obtained on the rod. By continuously moving the focusing lens in the direction of growth, a micro carbon rod with a diameter of 287${\mu}{\textrm}{m}$ and aspect ratio of 100 was fabricated..

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.147.4-147
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• 1998

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1329-1330
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• 2006

The effect of Cu on the hydrogen reduction of $MoO_3$ powders was investigated by measuring the humidity change during a non-isothermal process of hydrogen reduction. The presence of Cu induced a shift in the reduction temperature and strongly affected the reduction processes of $MoO_3\rightarrowMo_4O_{11}\rightarrowMoO_2$, which comprised the contained chemical vapor transport of $MoO_x(OH)_2$. This study suggests that the surface of the Cu grains acts as a nucleation site for the reduction of $MoO_x(OH)_2$ to $MoO_2$ particles from $MoO_3$ or $Mo_4O_{11}$. Such an activated reduction process results in the deposition of Mo and $MoO_2$ particles on the surface of the Cu.

• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.414-422
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• 1997

CdS thin films with low resistivity and adequate transmittance in the visible region for the window of CdS/CdTe hetero junction solar cel1 were prepared by close spaced vapor transport(CSVT) method. The electrical and optical properties of the CdS thin films were investigated in terms of the deposition conditions, such as the substrate temperature, the working pressure, and the source temperature. The substrate temperature, the working pressure, and the source temperature for the optimum deposition of the CdS thin films were $300^{\circ}C$, 100mTorr, and $730^{\circ}C$, respectively. The resistivity and the transmittance of the CdS thin films deposited under this condition were about $7.21{\times}10^{3}{\Omega}cm$ and over 65%, respectively. The crystallinity, the resistivity, and optical band gap were improved greatly compared to the CdS thin films deposited by general high vacuum evaporation.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.39.2-39.2
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• 2011

With the steady increase in the demand for flexible devices, mainly in display panels, researchers have focused on finding a novel material that have excellent electrical properties even when it is bended or stretched, along with superior mechanical and thermal properties. Graphene, a single-layered two-dimensional carbon lattice, has recently attracted tremendous research interest in this respect. However, the limitations in the growing method of graphene, mainly chemical vapor deposition on transition metal catalysts, has posed severe problems in terms of device integration, due to the laborious transfer process that may damage and contaminate the graphene layer. In addition, to lower the overall cost, a fabrication technique that supports low temperature and low vacuum is required, which is the main reason why solution-based process for graphene layer deposition has become the hot issue. Nonetheless, a direct deposition method of large area, few-layered, and uniform graphene layers has not been reported yet, along with a convenient method of patterning them. Here, we report an evaporation-induced technique for directly depositing few layers of graphene nanosheets with excellent uniformity and thickness controllability on any substrate. The printed graphene nanosheets can be patterned into desired shapes and structures, which can be directly applicable as flexible and transparent electrode. To illustrate such potential, the transport properties and resistivity of the deposited graphene layers have been investigated according to their thickness. The induced internal flow of the graphene solution during tis evaporation allows uniform deposition with which its thickness, and thus resistivity can be tuned by controlling the composition ratio of the solute and solvent.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.6
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• pp.403-407
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• 2015

Generally, MWCNT, with thermal, chemical and electrical superiority, is manufactured with CVD (chemical vapor deposition). Using MWCNT, it is comonly used as gas sensor of MOS-FET structure. In this study, in order to repeatedly detect gases, the author had to effectively eliminate gases absorbed in a MWCNT sensor. So as to eliminate gases absorbed in a MWCNT sensor, the sensor was applied heat of 423[K], and in order to observe how the applied heat was diffused within the sensor, the author interpreted the diffusion process of heat, using COMSOL interpretation program. In order to interpret the diffusion process of heat, the author progressed modeling with the structure of MWCNT gas sensor in 2-dimension, and defining heat transfer velocity($u={\Delta}T/{\Delta}x$), accorded to governing equation within the sensor, the author proposed heat transfer mechanism.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.249-252
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• 1997

Electroluminescence(EL) devices based on organic thin layers have attracted lot of interests because of their possible application as large-area display-emitting display. One of the problems of such devices is lifetime of the cell, where the degradation of the cell is partially due to the crystalliyzation of organic layers. In large part, this problem can be solved by using a multilayer device structure prepared by vapor deposition technique. In this study, blue light-emitting multilayer organic electroluminescence devices were fabricated vsing Poly (9-vinylcarbaEole) (PVK) and 2- (4-tert-butylphenyl)-5-(4$^{#}$-bis-phenyl) 1,3,4-oxadiazole (PBO) as hole trasport and electron transport material, respectively, where trim(8-hyd roxyquinolinate) aluminum (Al $q_3$) was used as a luminescenct material. A cell structure of glass sub- strate/indume-tin-oxide(ITO)/PCK/Al $q_3$/PBD/Mg:In was employed. Blue emission peak at 510nm was observed with this cell structure.e.

• The Journal of the Korea institute of electronic communication sciences
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• v.5 no.1
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• pp.88-92
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• 2010

Bottom gate and top gate field-effect transistor based carbon nanotube(CNT) were fabricated by CMOS process. Carbon nanotube directly grown by thermal chemical vapor deposition(CVD) using Ethylene ($C_2H_4$) gas at $700^{\circ}C$. The growth properties of CNTs on the device were analyzed by SEM and AFM. The electrical transport characteristics of CNT FET were investigated by I-V measurement. Transport through the nanotubes is dominated by holes at room temperature. By varying the gate voltage, bottom gate and top gate field-effect transistor successfully modulated the conductance of FET device.