The Journal of the Korea institute of electronic communication sciences (한국전자통신학회논문지)

Korea Institute of Electronic Communication Science (한국전자통신학회)
권호 표지

Characteristics of CNT Field Effect Transistor

탄소나노튜브 트랜지스터 특성 연구

  • 박용욱 (남서울대학교 전자공학과) ;
  • 나상엽 (남서울대학교 컴퓨터학과)
  • Received : 2010.01.03
  • Accepted : 2010.02.03
  • Published : 2010.02.28
Download PDF
⟨ Previous Next ⟩

Abstract

Bottom gate and top gate field-effect transistor based carbon nanotube(CNT) were fabricated by CMOS process. Carbon nanotube directly grown by thermal chemical vapor deposition(CVD) using Ethylene ($C_2H_4$) gas at $700^{\circ}C$. The growth properties of CNTs on the device were analyzed by SEM and AFM. The electrical transport characteristics of CNT FET were investigated by I-V measurement. Transport through the nanotubes is dominated by holes at room temperature. By varying the gate voltage, bottom gate and top gate field-effect transistor successfully modulated the conductance of FET device.

본 연구에서는 기존의 반도체 공정을 이용하여 bottom gate, top gate구조의 탄소나노튜브 트랜지스터를 제작하였다. 게이트 특성에 따른 특성을 연구하기 위하여 열화학 기상 증착법(CVD)으로 탄소나노튜브를 디바이스에 직접 성장시키고, 탄소나노튜브의 성장 특성 및 I-V동작 특성을 분석하였다. 제작된 탄소나노튜브 FET는 p-type, 즉 hole이 다수 캐리어로 존재하는 트랜지스터이며 구동전압에 따라 conductance 변화하는 특성을 보였다.

Keywords

References

  1. S. Iijima, "Helical microtubules of graphitc carbon", Nature, Vol. 354, p. 56, 1991. https://doi.org/10.1038/354056a0
  2. S. Fan, M. G. Chapline, N. R. Franklin, T. W. Tombler, A. M. Cassell, and H. Dai, "Self-oriented regular arrays of carbon nanotubes and their field emission properties", science, Vol. 238. p. 512, 1999.
  3. J. I. B. Wilson, N. Scheerbaum, S. karim, N. Polwart, P. John, Y. fan, and A. G. Fitzgerald, "Low temperature plasma chemical vapour deposition of carbon nanotubes", Diamond and Related Materials, Vol. 11, p. 918, 2002. https://doi.org/10.1016/S0925-9635(01)00725-7
  4. R. Martel, T. Schmidit, H. R. Shea, T. Hertel, and Ph. Avouris, "Single and multi wall carbon nanotube field-effect transistor", APL, Vol. 73, p. 2447, 1998.
  5. J. Appenzeller, J. Knoch, R. Martel, S. Wind, and Ph. Avouris, "Field-modulated carrier transport in carbon nanotube Transistors", PRL, Vol. 89, No. 12, p. 12608-1, 2002
  6. S. Rosenblatt,, Y. Yaish, J. W. Park, J. Gore, V. Sazonova, and P. L. Mceuen, "High performance electrolyte gated carbon nanotube transistors", Nano Lett., Vol. 2, p. 869, 2002. https://doi.org/10.1021/nl025639a
  7. S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appezeller, and Ph. Avouris, "Carbon nanotubes as Schottky Barrier Transistors", PRL, Vol. 89, No. 10, p. 106801-1, 2002. https://doi.org/10.1103/PhysRevLett.89.106801
  8. A. Javey, R. Tu, D. B. Farmer, J. Guo, R. G. Gordon, and H. Dai, "High performance n-Type carbon nanotube field- effect transistors with chemically doped contacts", Nano Lett., Vol. 5, p. 345, 2005. https://doi.org/10.1021/nl047931j