• 천문학회보
• /
• 제40권2호
• /
• pp.42.2-43
• /
• 2015

Massive stars play a major role in the interstellar energy budget and the shaping of the galactic environment. The water molecule is thought to be a sensitive tracer of physical conditions and dynamics in star-forming regions because of its large abundance variations between hot and cold regions. Herschel/HIFI allows us to observe the multiple rotational transitions of H2O including the ground-state levels, and its isotopologues toward high-mass star-forming regions in different evolutionary stages. Photodissociation regions (PDRs) are also targeted to investigate the distribution of water and its chemistry. We present line profiles and maps of H2O using data from two guaranteed-time key programs "Water In Star-forming regions with Herschel" and "Herschel observations of EXtra-Ordinary Sources". We analyze the temperature and density structures using LTE and non-LTE methods. We also estimate turbulent and expansion velocities, and abundance of water in the inner and outer envelopes using the 1D radiative transfer code. Around high-mass protostars we find H2O abundances of ~10-8-10-9 for the outer envelope and ~10-4-10-5 for the inner envelope, and expansion and turbulent velocities range from 1.0 km s-1 to 2.0 km s-1. The abundances and kinematic parameters of the sources do not show clear trends with evolutionary indicators. The Herschel/HIFI mapping observations of H2O toward the Orion Bar PDR show that H2O emission peaks between the shielded dense gas and the radicals position, in agreement with the theoretical and the observational PDR structure. The derived H2O abundance is ~10-7 and peaks at the depth of AV ~8 mag from the ionization front. Together with the low ortho-to-para ratio of H2O (~1) presented by Choi et al. (2014), our results show that the chemistry of water in the Orion Bar is dominated by photodesorption and photodissociation.

• 한국초전도ㆍ저온공학회논문지
• /
• 제6권3호
• /
• pp.16-20
• /
• 2004

YB $a_2$C $u_3$$O_{7-x}$ (YBCO) films were deposited on (100) SrTi $O_3$ single crystal substrates by a metal organic chemical vapor deposition (MOCVD) system of hot-wall type using single liquid source. Under the condition of the mole ratio of Y(tmhd)$_3$:Ba(tmhd)$_2$:Cu(tmhd)$_2$= 1:2.1:2.9. the deposition pressure of 10 Torr. the MO source line speed of 15 cm/min. the Ar/ $O_2$ flow rate of 800/800 sccm. YBCO films were prepared at the deposition temperatures of 780∼89$0^{\circ}C$. In case of the YBCO films with 2.2 ${\mu}{\textrm}{m}$ thickness deposited for 6 minutes at 86$0^{\circ}C$. XRD pattern showed complete c-axis growth and SEM morphology showed dense and crack-free surface. The atomic ratios of Ba/Y and Cu/Ba in the film were 1.92 and 1.56. respectively. The deposition rate of the film was as high as 0.37 ${\mu}{\textrm}{m}$/min. The critical temperature ( $T_{c.zero}$) of the film was 87K. The critical current of the film was 104 A/cm-width. and the critical current density was 0.47 MA/$\textrm{cm}^2$. For the thinner film of 1.3 ${\mu}{\textrm}{m}$ thickness. the critical current density of 0.62 MA/$\textrm{cm}^2$ was obtained.d.

• 설비공학논문집
• /
• 제19권10호
• /
• pp.718-725
• /
• 2007

In the general vapor-compression refrigeration system, refrigeration lubricant circulates in refrigeration system with refrigerant. Knowledge of the amount of circulating lubricant is very important to exactly calculate capacity of the refrigeration system. An experimental study was conducted to estimate the oil concentration of a flowing $CO_2/Oil$ mixtures. POE and PAG oil are considered as test lubricants in this study. Performance tests were conducted under simulated liquid conditions for $CO_2/POE$ oil mixture in oil concentration of 0 to 10 weight-percent and $CO_2/PAG$ oil mixture in oil concentration of 0 to 6 weight-percent in the temperature ranges of $-5^{\circ}C\;to\;15^{\circ}C$. The results obtained indicate specific gravity of $CO_2/Oil$ mixture is increased as oil concentration is increased and as temperature of mixture is decreased. Oil concentration correlation of $CO_2/POE$ oil mixture and $CO_2/PAG$ oil mixture is suggested, based on the measurement of specific gravity and temperature. This correlation enable to predict the oil concentration without extraction of the mixture and can be applied for $CO_2/POE$ mixtures and $CO_2/PAG$ mixtures.

• 한국군사과학기술학회지
• /
• 제1권1호
• /
• pp.227-237
• /
• 1998

HgCdTe Is the most versatile material for the developing infrared devices. Not like III-V compound semiconductors or silicon-based photo-detecting materials, HgCdTe has unique characteristics such as adjustable bandgap, very high electron mobility, and large difference between electron and hole mobilities. Many research groups have been interested in this material since early 70's, but mainly due to its thermodynamic difficulties for preparing materials, no single growth technique is appreciated as a standard growth technique in this research field. Solid state recrystallization(SSR), travelling heater method(THM), and Bridgman growth are major techniques used to grow bulk HgCdTe material. Materials with high quality and purity can be grown using these bulk growth techniques, however, due to the large separation between solidus and liquidus line on the phase diagram, it is very difficult to grow large materials with minimun defects. Various epitaxial growth techniques were adopted to get large area HgCdTe and among them liquid phase epitaxy(LPE), metal organic chemical vapor deposition(MOCVD), and molecular beam epitaxy(MBE) are most frequently used techniques. There are also various types of photo-detectors utilizing HgCdTe materials, and photovoltaic and photoconductive devices are most interested types of detectors up to these days. For the larger may detectors, photovoltaic devices have some advantages over power-requiring photoconductive devices. In this paper we reported the main results on the HgCdTe growing and characterization including LPE and MOCVD, device fabrication and its characteristics such as single element and linear array($8{\times}1$ PC, $128{\times}1$ PV and 4120{\times}1$ PC). Also we included the results of the dewar manufacturing, assembling, and optical and environmental test of the detectors.

• 한국태양에너지학회:학술대회논문집
• /
• 한국태양에너지학회 2012년도 춘계학술발표대회 논문집
• /
• pp.243-247
• /
• 2012

The paper focuses on an anti-reflection (AR) coating deposited by PECVD in silicon solar cell fabrication. AR coating is effective to reduce the reflection of the light on the silicon wafer surface and then increase substantially the solar cell conversion efficiency. In this work, we carried out experiments to optimize double AR coating layer with silicon nitride and silicon oxide for the silicon solar cells. The p-type mono crystalline silicon wafers with $156{\times}156mm^2$ area, 0.5-3 ${\Omega}{\cdot}cm$ resistivity, and $200{\mu}m$ thickness were used. All wafers were textured in KOH solution, doped with $POCl_3$ and removed PSG before ARC process. The optimized thickness of each ARC layer was calculated by theoretical equation. For the double layer of AR coating, silicon nitride layer was deposited first using $SiH_4$ and $NH_3$, and then silicon oxide using $SiH_4$ and $N_2O$. As a result, reflectance of $SiO_2/SiN_x$ layer was lower than single $SiN_x$ and then it resulted in increase of short-circuit current and conversion efficiency. It indicates that the double AR coating layer is necessary to obtain the high efficiency solar cell with PECVD already used in commercial line.

• 한국대기환경학회지
• /
• 제28권1호
• /
• pp.39-51
• /
• 2012

Aerosol slurry samples were collected in 60-min interval using Korean Semi-continuous Elements in Aerosol Sampler (KSEAS) between May 19 and June 6, 2010 at an urban site of Gwangju. The $PM_{2.5}$ samples were collected with a flow rate of 16.7 L/min and particles are grown by condensation of water vapor in a condenser maintained at ${\sim}5^{\circ}C$ after saturation by direct injection of steam. The resulting droplets are collected in a liquid slurry with a airdroplet separator. Concentrations of 16 elements (Al, Fe, Mn, Ca, K, Cu, Zn, Pb, Cd, Cr, Ti, V, Ni, Co, As, Se) in the collected slurry samples were determined off-line by ICP-MS. KSEAS sample analysis encompassed the sampling periods for which 24-hr average elemental species concentrations were calculated for comparison with those derived from 24-hr integrated filter samples. Relationship between elemental species measured by two methods indicated high correlation coefficients (r), mostly greater than r of 0.80. However, we note that concentrations of Al, K, Ca, Mn, and Fe, which are often associated with crustal elemental particles, in the KSEAS samples, were substantially lower (1.4~11 times) than those found in the typical filter-based samples. This discrepancy is probably due to difficulties in transferring insoluble dust particles to the collection vials in the KSEAS. Temporal profiles of elemental concentrations indicate that some transient events in their concentrations are observed over the sampling periods. For the elemental species studied, atmospheric concentrations during the transient events increased by factors of 4 in Mn~80 in Zn, compared to their background levels. Principle component analyses were applied to the hourly KSEAS data sets to identify sources affecting the concentrations of the metal constituents observed. In this study, we conclude that hourly measurements for particle-bound elemental constituents were extremely useful for revealing the short-term variability in their concentrations and developing insights into their sources.

• 한국진공학회지
• /
• 제1권1호
• /
• pp.126-133
• /
• 1992

E-Beam 기법을 이용하여 증착시킨 Ag doped CdS 박막은 육방정계이고 공기, Ar 분위기에서 $^550{\circ}C$로 열처리한 결과 grain size가 1$mu extrm{m}$ 정도로 성장되었고, Van Der Pauw 방법으로 구한 Hall data로부터 CdS crystal은 n형 반도체이고 상온에서의 carrier 농 도는 2.7 $\times$ 1011cm-3이고 Hall mobility는 5.8 $\times$ 102cm2V-1sec-1정도임을 알 수 있었다. CdS : Ag 박막의 PL spectra는 Gaussian curve를 보여주었고, spectra peak는 파장이 520nm 근처에 위치하고 있으며, CdS : Ag 박막에서의 광전류(pc)와 암전류(dc)의 ratio(pc/dc)는 공기 중에서 열처리한 시료의 값이 크다는 것을 알 수 있었다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.71-71
• /
• 2012

As the critical dimensions of integrated circuits are scaled down, the line width and spacing between the metal interconnects are made smaller. The dielectric film used as insulation between the metal lines contributes to the resistance-capacitance (RC) time constant that governs the device speed. If the RC time delay, cross talk and lowering the power dissipation are to be reduced, the intermetal dielectric (IMD) films should have a low dielectric constant. The introduction of Cu and low-k dielectrics has incrementally improved the situation as compared to the conventional $Al/SiO_2$ technology by reducing both the resistivity and the capacitance between interconnects. Some of the potential candidate materials to be used as an ILD are organic and inorganic precursors such as hydrogensilsequioxane (HSQ), silsesquioxane (SSQ), methylsilsisequioxane (MSQ) and carbon doped silicon oxide (SiOCH), It has been shown that organic functional groups can dramatically decrease dielectric constant by increasing the free volume of films. Recently, various inorganic precursors have been used to prepare the SiOCH films. The k value of the material depends on the number of $CH_3$ groups built into the structure since they lower both polarity and density of the material by steric hindrance, which the replacement of Si-O bonds with Si-$CH_3$ (methyl group) bonds causes bulk porosity due to the formation of nano-sized voids within the silicon oxide matrix. In this talk, we will be introduce some properties of SiOC(-H) thin films deposited with the dimethyldimethoxysilane (DMDMS: $C_4H_{12}O_2Si$) and oxygen as precursors by using plasma-enhanced chemical vapor deposition with and without ultraviolet (UV) irradiation.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
• /
• pp.110-110
• /
• 2011

The nanomechanical properties of fully lithiated and unlithiated silicon nanowire deposited on silicon substrate have been studied with atomic force microscopy. Silicon nanowires were synthesized using the vapor-liquid-solid process on stainless steel substrates using Au catalyst. Fully lithiated silicon nanowires were obtained by using the electrochemical method, followed by drop-casting on the silicon substrate. The roughness, derived from a line profile of the surface measured in contact mode atomic force microscopy, has a smaller value for lithiated silicon nanowire and a higher value for unlithiated silicon nanowire. Force spectroscopy was utilitzed to study the influence of lithiation on the tip-surface adhesion force. Lithiated silicon nanowire revealed a smaller value than that of the Si nanowire substrate by a factor of two, while the adhesion force of the silicon nanowire is similar to that of the silicon substrate. The Young's modulus obtained from the force-distance curve, also shows that the unlithiated silicon nanowire has a relatively higher value than lithiated silicon nanowire due to the elastically soft amorphous structures. The frictional forces acting on the tip sliding on the surface of lithiated and unlithiated silicon nanowire were obtained within the range of 0.5-4.0 Hz and 0.01-200 nN for velocity and load dependency, respectively. We explain the trend of adhesion and modulus in light of the materials properties of silicon and lithiated silicon. The results suggest a useful method for chemical identification of the lithiated region during the charging and discharging process.

• 한국안전학회지
• /
• 제20권1호
• /
• pp.18-23
• /
• 2005

This study deals with the friction and wear characteristics of C-N coated SCM415 steel. The PSII(plasma source ion implantation) apparatus was built and a SCM415 test piece with steel substrate was treated with carbon nitrogen by this apparatus. The composition and structure of the surface layer were analyzed and compared with that of PVD(physical vapor decomposition) coated TiN layer. It was found that both of friction coefficient of C-N coating and TiN coating decreased with increasing load, however, C-N coating showed relatively lower faction coefficient than that of TiN coating. The micro-vickers hardness of C-N film is 3200 Hv, which is $32\~43\%$ higher than that of TiN film. The critical load of C-N film is 52N, which is $25\%$ higher than that of TiN film. The hardness of C-N film fabricated by Plasma ion implantation is $61\~70\%$ higher than that of base material, and faction coefficient is $14\~50\%$ lower than that of base material. It is also interesting to note that the friction was changed from adhesive wear mode to light oxidizing wear mode.