• Title/Summary/Keyword: Vapor growth

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Growth of InGaN/GaN Multiple Quantum Wells by Metalorganic Chemical Vapor Deposition and Their Structural and Optoelectronic Properties

  • Kim, H.J.;Kwon, S.-Y.;Yim, S.;Na, H.;Kee, B.;Yoon, E.
    • Journal of Korean Vacuum Science & Technology
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    • v.6 no.2
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    • pp.88-91
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    • 2002

  • InGaN/GaN multiple quantum wells (MQWs) were grown by metalorganic chemical vapor deposition and their structural and optical properties were studied. When the average In content was increased by increasing TMIn flow rate, PL measurement showed little change in PL peak position and large increase in PL intensity instead. Large changes in PL peak position could be achieved by changing growth temperature. We propose the formation of fixed In content, highly In-rich quantum dot-like phases in InGaN MQWs driven by spinodal decomposition.

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Heteroepitaxial growth of 3C-SiC on 6H-SiC substrates by thermal chemi-cal vapor deposition (화학기상증착법에 의한 6H-SiC 기판상의 3C-SiC 이종박막 성장)

  • 장성주;박주훈
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.13 no.6
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    • pp.290-296
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    • 2003

  • The heteroepitaxial growth of crystalline 3C-SiC on 6H-SiC substrates using high purity silane ($SiH_4$) and prophane ($C_3H^8$) was carried out by thermal chemical vapor deposition, and growth characteristics were investigated in this study. In case that the flow ratio of C/Si and flow rate of $H_2$ were 4.0 and 5.0 slm, respectively, the growth rate of epilayers was about 1.8 $\mu$m/h at growth temperature of $1200^{\circ}C$. The Nomarski surface morphology, X-ray diffraction, Raman spectroscopy, and photoluninescence of grown epilayers were measured to investigate the crystallinity. In this study, the high quality of crystalline 3C-SiC heteropitaxial layers was observed at growth temperature of above $1150^{\circ}C$.

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The Change of Water Vapor Transport due to Global Warming (지구 온난화에 따른 물 수송 변화)

  • Oh, Hyun-Taik;Kim, Jeong-Woo;Shin, Ho-Jeong;Choi, Young-Jean
    • Journal of Korea Water Resources Association
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    • v.37 no.2
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    • pp.109-119
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    • 2004

  • This research is an analysis of the water vapor transport change Into the continent due to the global warming effect with the general circulation models. Water vapor transport change from ocean to land increases through the year due to CO2 doubling effect. In Eurasia, it indicates an increase about 170∼350${\times}$06 Mt/day the whole year. In Africa, it shows an decrease every month except November, especially there is the maximum decrease about -350${\times}$106 Mt/day during August-September. In other continents, excluding Eurasia and Africa, the change of water vapor transport vary with the month below $\pm$8.0${\times}$106 Mt/day with the unsystematic patterns. In Eurasia, the change of water vapor transport increases as a whole, but it decrease in desert areas which occupy a high area-ratio. Therefore, except desert areas, the amount of the growth in water vapor transport change concentrate on Asian monsoon area. As a result of monsoon strengthening, available water will grow considerably at the asian monsoon areas.

  • https://doi.org/10.3741/JKWRA.2004.37.2.109 인용 PDF KSCI