• Korean Journal of Materials Research
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• v.10 no.7
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• pp.482-488
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• 2000

The deposition characteristics of Cu film by MOCVD using (hfac)Cu(1,5-COD)(1,1,1,5,5,5-hexafluro-2,4-pentadionato Cu(I) 1,5-cryclooctadiene) as a precursor have been investigated in terms of substrate conditions. Two different substrates such as air-exposed TiN and non-contaminated TiN were used for the MOCVD of Cu. MOCVD of Cu on the air-exposed TiN affected the nucleation rate of Cu as well as its growth, resulting in the Cu films having poor interconnection between particles with relatively small grains. On the other hand, in-situ MOCVD of Cu led to the Cu films having a significantly improved interconnection between particles with larger grains, indicating the resistivity as low as $2.0{\mu}{\Omega}-cm$ for the films having more than 1900$\AA$ thickness. Moreover, better adhesion of Cu films to the TiN by using in-situ MOCVD has been obtained. Finally, initial coalescence mechanism of Cu was suggested in this paper in terms of different substrate conditions by observing the surface morphology of the Cu films deposited by MOCVD.

• Environmental Analysis Health and Toxicology
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• v.19 no.1
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• pp.33-40
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• 2004

Benzoyl peroxide is a High Production Volume Chemical, which is produced about 1,371 tons/year in Korea as of 2001 survey. The substance is mainly used as initiators in polymerization, catalysts in the plastics industry, bleaching agents for flour and medication for acne vulgaris. In this study, Quantitative Structure-Activity Relationships (QSAR) are used for getting adequate information on the physical -chemical properties of this chemical. And hydrolysis in water, acute toxicity to aquatic and terrestrial organisms for benzoyl peroxide were studied. The physical -chemical properties of benzoyl peroxide were estimated as followed; vapor pressure=0.00929 Pa, Log $K_{ow}$ = 3.43, Henry's Law constant=3.54${\times}$10$^{-6}$ atm-㎥/mole at $25^{\circ}C$, the half-life of photodegradation=3 days and bioconcentration factor (BCF)=92. Hydrolysis half-life of benzoyl peroxide in water was 5.2 hr at pH 7 at $25^{\circ}C$ and according to the structure of this substance hydrolysis product was expected to benzoic acid. Benzoyl peroxide has toxic effects on the aquatic organisms. 72 hr-Er $C_{50}$ (growth rate) for algae was 0.44 mg/1.,48 hr-E $C_{50}$ for daphnia was 0.07mg/L and the 96hr-L $C_{50}$ of acute toxicity to fish was 0.24mg/L. Acute toxicity to terrestrial organisms (earth worm) of benzoyl peroxide was low (14 day-L $C_{50}$ = > 1,000 mg/kg). Although benzoyl peroxide is high toxic to aquatic organisms, the substance if not bioaccumulated because of the rapid removal by hydrolysis (half-life=5.2 hr at pH 7 at $25^{\circ}C$) and biodegradation (83% by BOD after 21 days). The toxicity observed is assumed to be due to benzoyl peroxide rather than benzoic acid, which shows much lower toxicity to aquatic organisms. One can assume that effects occur before hydrolysis takes place. From the acute toxicity value of algae, daphnia and fish, an assessment factor of 100 was used to determine the predicted no effect concentration (PNEC). The PNEC was calculated to be 0.7$\mu\textrm{g}$/L based on the 48 hr-E $C_{50}$ daphnia (0.07 mg/L). The substance shows high acute toxicity to aquatic organisms and some information indicates wide-dispersive ore of this substance. So this substance is, a candidate for further work, even if it hydrolysis rapidly and has a low bioaccumulation potential. This could lead to local concern for the aquatic environment and therefore environmental exposure assessment is recommended.

• Journal of the Korean Vacuum Society
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• v.13 no.3
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• pp.114-119
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• 2004

Silicon Nitride thin films were deposited on p-type Si (100) substrates by atomic layer deposition (ALD) method at $550^{\circ}C$ using alternating exposures of $SiH_2Cl_2$ and $NH_3$, and the physical and electrical propeties of the deposited films were characterized. The thickness of the films was linearly increased with the number of deposition cycles, and the growth rate of the films was 0.13 nm/cycle with the reactant exposures of $3.0\times10^{9}$ L. The silicon nitride thin films deposited by Alf exhibited similar physical properties with the silicon nitride thin films deposited by low-pressure chemical vapor deposition (LPCVD) method in terms of refractive index and wet etch rate, lowering deposition temperature by more than 200 $^{\circ}C$. The ALD films showed the leakage current density of 0.79 nA/$\textrm{cm}^2$ at 3 MV/cm, which is lower than 6.95 nA/$\textrm{cm}^2$ of the LPCVD films under the same condition.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.391-392
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• 2012

In these days, the desire for the precise and tiny displays in mobile application has been increased strongly. Currently, laser displays ranging from large-size laser TV to mobile projectors, are commercially available or due to appear on the market [1]. In order to achieve a mobile projectors, the semiconductor laser diodes should be used as a laser source due to their size and weight. In this presentation, the continuous etch characteristics of Pd and AlGaN/GaN superlattice for the fabrication of blue laser diodes were investigated by using inductively coupled $CHF_3$ and $Cl_2$ -based plasma. The GaN laser diode samples were grown on the sapphire (0001) substrate using a metal organic chemical vapor deposition system. A Si-doped GaN layer was grown on the substrate, followed by growth of LD structures, including the active layers of InGaN/GaN quantum well and barriers layer, as shown in other literature [2], and the palladium was used as a p-type ohmic contact metal. The etch rate of AlGaN/GaN superlattice (2.5/2.5 nm for 100 periods) and n-GaN by using $Cl_2$ (90%)/Ar (10%) and $Cl_2$ (50%)/$CHF_3$ (50%) plasma chemistry, respectively. While when the $Cl_2$/Ar plasma were used, the etch rate of AlGaN/GaN superlattice shows a similar etch rate as that of n-GaN, the $Cl_2/CHF_3$ plasma shows decreased etch rate, compared with that of $Cl_2$/Ar plasma, especially for AlGaN/GaN superlattice. Furthermore, it was also found that the Pd which is deposited on top of the superlattice couldn't be etched with $Cl_2$/Ar plasma. It was indicating that the etching step should be separated into 2 steps for the Pd etching and the superlattice etching, respectively. The etched surface of stacked Pd/superlattice as a result of 2-step etching process including Pd etching ($Cl_2/CHF_3$) and SLs ($Cl_2$/Ar) etching, respectively. EDX results shows that the etched surface is a GaN waveguide free from the Al, indicating the SLs were fully removed by etching. Furthermore, the optical and electrical properties will be also investigated in this presentation. In summary, Pd/AlGaN/GaN SLs were successfully etched exploiting noble 2-step etching processes.

• Journal of the Mineralogical Society of Korea
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• v.19 no.3 s.49
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• pp.153-162
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• 2006

Fluid inclusions in amethyst from the Samcheonpo amethyst deposit of the Waryongsan area, Kyongnam generally grouped into four different types: Type I (liquid-rich and $10{\sim}23wt%$ NaCl, $Th=289{\sim}359^{\circ}C$), Type II (vapor-rich and $2{\sim}10wt%$ NaCl, $Th=304{\sim}365^{\circ}C;$), Type III (halite-bearing, $31{\sim}54wt%$ NaCl, $Th=259{\sim}510^{\circ}C;$), and Type IV ($CO_{2}-bearing\;9{\sim}13wt%\;NaCl,\;126{\sim}277^{\circ}$). Type I, II, and III inclusions are confined in the lower part of the amethyst and Type IV in the upper, which indicates significant hydrothermal activity during the earliest stage of the amethyst growth or the solidus condition of granitic rocks. The earliest fluid exsolved from the crystallizing granitic magma formed Type IIIa which is spatially associated with silicate melt inclusions. The homogenization behavior of Type IIIa inclusions by dissolution of the halite crystal after the bubble disappearance indicates that Type IIIa inclusions were trapped at some relatively elevated pressure. Exsolution of Type IIIb, I, II forming fluids with gradual decrease in their salinity was followed. The last fluid was $CO_{2}-bearing$ fluid (Type IV), which is assumed to be derived by decarbonization reactions with the surrounding sedimentary rocks. It suggests that the fine-grained granitic rocks containing the Samcheonpo amethyst crystallized at the sub-solvus condition saturated with water and exsolved abundant water.

• Korean Journal of Optics and Photonics
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• v.15 no.5
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• pp.469-474
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• 2004

We have fabricated and designed wavelength-tunable sampled grating distributed Bragg reflector laser diodes(SGDBR-LD) by using, for the first time, planar buried heterostructures(PBH). The diodes have low threshold current values and high-performance of laser operation. Growth condition using metal organic chemical vapor deposition(MOCVD) was optimized for the formation of a good butt-coupling at the interface. A maximum output power of the fabricated device was 20 mW under 200 mA continuous wave(CW) operation at $25^{\circ}C$. Average threshold current and voltage were 12 mA and 0.8 V, approximately. This output power is higher than those of ridge waveguide(RWG) and buried ridge stripe(BRS) structures by amounts of 9 mW and 13 mW, respectively. We obtained a tuning range of 44.4nm which is well matched with the target value of our design. The side mode suppression ratio of more than 35 dB was obtained for the whole tuning range. Optical output power variation was less than 5 dB, which is 4 dB smaller than that of RWG structures.

• Journal of the Korean Magnetics Society
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• v.14 no.4
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• pp.149-161
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• 2004

The fusion of nano technology and information technology is essential to sustain the present growth rate and to induce new industry in this ever-growing information age. Considering Korean industry whose competitiveness lies heavily on information related technologies, this field will be inevitable for future. Nano materials can be described as novel materials whose size of elemental structure has been engineered at the nanometer scale. Materials in the nanometer size range exhibit fundamentally new behavior, as their size falls below the critical length scale associated with any given property. " Bottom-up' techniques involve manipulating individual atoms and molecules. Bottom-up process usually implies controlled or directed self assembly of atoms and molecules into nano structures. It resembles more closely the processes of biology and chemistry, where atoms and molecules come together to create structures such as crystals or living cells. Nano scale sensors are included in the electronics area since the diverse sensing mechanisms are often housed on a semiconductor substrate and usually give rise to an electronic signal. The application of nano technology to the chemical sensors should allow improvements in functionality such as gas sensing. In this presentation, we will discuss about the nano scale information materials and devices fabricated by using the organic/inorganic nano templates.

• Journal of the Korean GEO-environmental Society
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• v.9 no.2
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• pp.39-46
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• 2008

Due to the growth in industrialization, potential hazards in subsurface environments are becoming increasingly significant. The extraction of the contaminant from the soil and movement of the water are restricted due to the low permeability and adsorption characteristics of the reclaimed soils. There are a number of approaches to in-situ remediation that are used in contaminated sites for removing contaminants. These include soil flushing, dual phase extraction, and soil vapor extraction. Among these techniques, soil flushing was the focus of the investigation in this paper. Incorporated technique with PVDs has been used for dewatering from fine-grained soils for the purpose of ground improvement by means of prefabricated vertical drain systems. The laboratory model tests were performed by using the flushing tracer solutions for silty soils and recorded the tracer concentration changes with the elapsed time and flow rates. The modeling was intended to predict the effectiveness and time dependence of the remediation process. Modeling has been performed on the extraction, considering tracer concentration and laboratory model test characteristics. The computer model used herein are SEEP/W and CTRAN/W, this 2-D finite element program allows for modeling to determine hydraulic head and pore water pressure distribution, efficiency of remediation for the subsurface environment. It is concluded that the coefficient of permeability of contaminated soil is related with vertical velocity and extracted flow rate. The vertical velocity and extracted flow rate have an effect on dispersivity and finally are played an important role in-situ soil remediation.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.263-268
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• 2003

Precise thickness control and excellent properties of silicon nitride thin films are essential for the next-generation semiconductor and display devices. In this study, silicon nitride thin films were deposited by batch-type atomic layer deposition (ALD) method using $SiC1_4$ and $NH_3$ as the precursors at temperatures ranging from 500 to $600^{\circ}C$. Thin film deposition using a batch-type ALD reactor was a layer-by-layer atomic growth by self-limiting surface reactions, and the thickness of the deposited film can be controlled by the number of deposition cycles. The silicon nitride thin films deposited by ALD method exhibited composition, refractive index and wet etch rate similar with those of the thin films deposited by low-pressure chemical vapor deposition method at $760^{\circ}C$. The addition of pyridine mixed with precursors increased deposition rate by 50%, however, the films deposited with pyridine was readily oxidized owing to its unstable structure, which is unsuitable for the application to semiconductor or display devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.74-74
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• 2010

One-dimensional nanosturctures such as nanowires and nanotube have been mainly proposed as important components of nano-electronic devices and are expected to play an integral part in design and construction of these devices. Silicon carbide(SiC) is one of a promising wide bandgap semiconductor that exhibits extraordinary properties, such as higher thermal conductivity, mechanical and chemical stability than silicon. Therefore, the synthesis of SiC-based nanowires(NWs) open a possibility for developing a potential application in nano-electronic devices which have to work under harsh environment. In this study, one-dimensional nanowires(NWs) of cubic phase silicon carbide($\beta$-SiC) were efficiently produced by thermal chemical vapor deposition(T-CVD) synthesis of mixtures containing Si powders and hydrocarbon in a alumina boat about $T\;=\;1400^{\circ}C$ SEM images are shown that the temperature below $1300^{\circ}C$ is not enough to synthesis the SiC NWs due to insufficient thermal energy for melting of Si Powder and decomposition of methane gas. However, the SiC NWs are produced over $1300^{\circ}C$ and the most efficient temperature for growth of SiC NWs is about $1400^{\circ}C$ with an average diameter range between 50 ~ 150 nm. Raman spectra revealed the crystal form of the synthesized SiC NWs is a cubic phase. Two distinct peaks at 795 and $970\;cm^{-1}$ over $1400^{\circ}C$ represent the TO and LO mode of the bulk $\beta$-SiC, respectively. In XRD spectra, this result was also verified with the strongest (111) peaks at $2{\theta}=35.7^{\circ}$, which is very close to (111) plane peak position of 3C-SiC over $1400 ^{\circ}C$ TEM images are represented to two typical $\beta$-SiC NWs structures. One is shown the defect-free $\beta$-SiC nanowire with a (111) interplane distance with 0.25 nm, and the other is the stacking-faulted $\beta$-SiC nanowire. Two SiC nanowires are covered with $SiO_2$ layer with a thickness of less 2 nm. Moreover, by changing the flow rate of methane gas, the 300 sccm is the optimal condition for synthesis of a large amount of $\beta$-SiC NWs.