Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2010.02a
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- Pages.74-74
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- 2010
Characterization of SiC nanowire synthesize by Thermal CVD
- 정민욱 (나노튜브 및 나노복합구조 연구센터, 성균나노과학기술원, BK21 물리연구단, 성균관대학교) ;
- 김민국 (나노튜브 및 나노복합구조 연구센터, 성균나노과학기술원, BK21 물리연구단, 성균관대학교) ;
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송우석
(나노튜브 및 나노복합구조 연구센터, 성균나노과학기술원, BK21 물리연구단, 성균관대학교) ;
- 정대성 (나노튜브 및 나노복합구조 연구센터, 성균나노과학기술원, BK21 물리연구단, 성균관대학교) ;
- 최원철 (나노튜브 및 나노복합구조 연구센터, 성균나노과학기술원, BK21 물리연구단, 성균관대학교) ;
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박종윤
(나노튜브 및 나노복합구조 연구센터, 성균나노과학기술원, BK21 물리연구단, 성균관대학교)
- Published : 2010.02.17
Abstract
One-dimensional nanosturctures such as nanowires and nanotube have been mainly proposed as important components of nano-electronic devices and are expected to play an integral part in design and construction of these devices. Silicon carbide(SiC) is one of a promising wide bandgap semiconductor that exhibits extraordinary properties, such as higher thermal conductivity, mechanical and chemical stability than silicon. Therefore, the synthesis of SiC-based nanowires(NWs) open a possibility for developing a potential application in nano-electronic devices which have to work under harsh environment. In this study, one-dimensional nanowires(NWs) of cubic phase silicon carbide(
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