• 제목/요약/키워드: Vanadium pentoxide

검색결과 37건 처리시간 0.022초

ICP-AES로 바나듐 측정을 위한 마이크로파 용해 장치를 이용한 오산화바나듐 용해 (Dissolution of vanadium pentoxide using microwave digestion system for determination of vanadium by ICP-AES)

  • 최광순;박양순;김연희;한선호;송규석
    • 분석과학
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    • 제23권6호
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    • pp.511-517
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    • 2010
  • 황산 제조 및 그 외에 많은 유기화합물을 산화시키는 촉매제로 널리 이용되고 있는 공업용 오산화바나듐의 용해방법을 연구하였다. 오산화바나듐 시약은 왕수-$H_2O_2$-HF로 완전히 용해되었으나 판상 모양의 오산화바나듐 시료는 혼합산에 완전히 용해되지 않아 시료 전처리 방법을 확립할 필요가 있다. 따라서 본 연구에서는 산 처리법과 용융법을 혼용한 방법 및 마이크로파 용해 장치를 이용한 용해법을 비교 분석하여 바나듐화합물의 용해성을 조사하였다. 바나듐 화합물은 왕수, 플루오르화수소산 및 과산화수소의 혼합산으로 녹이는 것이 최적이었으며, 두 용해 방법 중 마이크로파 용해 장치를 이용한 용해법이 분석의 신속성을 고려하면 보다 유용한 방법으로 판단되었다. 마이크로파 용해 장치로 용해한 다음 유도 결합 플라스마 원자방출분광법으로 측정한 결과 바나듐산화물($V_2O_5$) 함량은 $97.9{\pm}0.9%$이었다.

Atomic Layer Deposition of Vanadium Pentoxide on Carbon Electrode for Enhanced Capacitance Performance in Capacitive Deionization

  • Chung, Sangho;Bong, Sungyool;Lee, Jaeyoung
    • 공업화학
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    • 제33권3호
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    • pp.315-321
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    • 2022
  • We firstly observed that activated carbon (AC) deposited by atomic-layer vanadium pentoxide (V2O5) was used as CDI electrodes to utilize the high dielectric constant for enhancing the capacitance equipped with atomic layer deposition (ALD). It was demonstrated that the vanadium pentoxide (V2O5) with sub-nanometer layer was effectively deposited onto activated carbon, and the electric double-layer capacitance of the AC was improved due to an increase in the surface charge density originated from polarization, leading to high ion removal in CDI operation. It was confirmed that the performance of modified-AC increases more than 200%, comparable to that of pristine-AC under 1.5 V at 20 mL min-1 in CDI measurements.

Manufacture of Vanadium pentoxide and nickel sulfate from heavy oil fly ash

  • Park, Gyeong-Ho
    • 자원리싸이클링
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    • 제2권4호
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    • pp.23-26
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    • 1993
  • This work is carried out to develop the recovery process of vanadium as vanadium pentoxide and nickel as nickel sulphate from the leaching solution of heavy oil fly ash. First, sodium chlorate solution was added to the leaching solution to oxidize vanadium ions. With adjusting pH of the solution and heating, vanadium ions(V) is hydrated and precipitated as red cake of $V_2O_5$ from the solution. After recovering vanadium, nickel is recovered as ammonium nickel sulfate with crystallization process. From this nickel salt, nickel sulfate which meets the specifications for the electroplating industry can be produced economically. More than 85% of vana-dium and nickel in the fly ash are recovered in this process.

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스퍼터링으로 퇴적시킨 바나듐 산화막의 구조적, 광학적 특성 (Structural and optical properties of sputtered vanadium pentoxide thin films)

  • 최복길;신규호;정상진;최창규;김성진
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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    • pp.746-748
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    • 1998
  • Thin films of vanadium pentoxide ($V_{2}O_{5}$) have been deposited by r.f. magnetron sputtering from $V_{2}O_{5}$ target in gas mixture of argon and oxygen. Crystal structure, surface morphology, surface composition and optical properties of films prepared under different substrates are characterized through XRD, SEM, AES, XPS and optical absorption measurements. The films prepared below $100^{\circ}C$ are amorphous, and those prepared above $200^{\circ}C$ are polycrystalline. Thermally Induced oxidation of films into higher oxide has been observed with increasing substrate temperature. Vanadium oxide films show two optical absorption bands indicating the presence of direct and indirect transitions.

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글루코오스 농도 측정을 위한 볼로미터 타입의 적외선 센서 제작 (The fabrication of bolometric IR detector for glucose concentration detection)

  • 최주찬;정호;박건식;박종문;구진근;강진영;공성호
    • 센서학회지
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    • 제17권4호
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    • pp.250-255
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    • 2008
  • A vanadium pentoxide ($V_2O_5$)-based bolometric infrared (IR) sensor has been designed and fabricated using micro electro mechanical systems (MEMS) technology for glucose detection and its resistive characteristics has been illustrated. The proposed bolometric infrared sensor is composed of the vanadium pentoxide array that shows superior temperature coefficient of resistance (TCR) and standard silicon micromachining compatibility. In order to achieve the best performance, deposited $V_2O_5$ thin film is optimized by adequate rapid thermal annealing (RTA) process. Annealed vanadium oxide thin film has demonstrated a linear characteristic and relatively high TCR value (${-4}%/^{\circ}C$). The resistance of vanadium oxide is changed by IR intensity based on glucose concentration.