• 센서학회지
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• 제29권5호
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• pp.354-359
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• 2020

The high vacuum hermetic sealing technique ensures excellent performance of MEMS resonators. For the high vacuum hermetic sealing, the customization of anodic bonding equipment was conducted for the glass/Si/glass triple-stack anodic bonding process. Figure 1 presents the schematic of the MEMS resonator with triple-stack high-vacuum anodic bonding. The anodic bonding process for vacuum sealing was performed with the chamber pressure lower than 5 × 10^-6 mbar, the piston pressure of 5 kN, and the applied voltage was 1 kV. The process temperature during anodic bonding was 400 ℃. To maintain the vacuum condition of the glass cavity, a getter material, such as a titanium thin film, was deposited. The getter materials was active at the 400 ℃ during the anodic bonding process. To read out the electrical signals from the Si resonator, a vertical feed-through was applied by using through glass via (TGV) which is formed by sandblasting technique of cap glass wafer. The aluminum electrodes was conformally deposited on the via-hole structure of cap glass. The TGV process provides reliable electrical interconnection between Si resonator and aluminum electrodes on the cap glass without leakage or electrical disconnection through the TGV. The fabricated MEMS resonator with proposed vacuum packaging using three-layer anodic bonding process has resonance frequency and quality factor of about 16 kHz and more than 40,000, respectively.

• Journal of Korean Vacuum Science & Technology
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• 제4권1호
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• pp.6-10
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• 2000

Ferroelectric YMnO$_3$ thin films were deposited on $Y_2$O$_3$/si(100) substrates by metalorganic chemical vapor deposition. The YMnO$_3$ thin films annealed in vacuum ambient (100 mTorr) above 75$0^{\circ}C$ show hexagonal structured YMnO$_3$. However, the film annealed in oxygen ambient shows poor crystallinity, and the second phase as $Y_2$O$_3$ and orthorhombic-YMnO$_3$ were shown. The annealing ambient and pressure on the crystallinity of YMnO$_3$ thin films is very important. The C-V characteristics have a hysteresis curve with a clockwise rotation, which indicates ferroelectric polarization switching behavior. When the gate voltage sweeps from +5 to 5 V, the memory window of the Pt/YMnO$_3$/Y$_2$O$_3$/Si gate capacitor annealed at 85$0^{\circ}C$ is 1.8 V. The typical leakage current densities of the films annealed in oxygen and vacuum ambient are about 10$^{-3}$ and 10$^{-7}$ A/cm$^2$ at applied voltage of 5 V.

• 한국세라믹학회지
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• 제37권2호
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• pp.168-173
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• 2000

YMnO3 thin films were prepared on Pt/Ti/SiO2/Si substrate by chemical solution deposition method. The films were crystallized by heat-treatment at 85$0^{\circ}C$ for 1 hour. Effects of an annealing atmosphere(O2, Ar, vacuum) on the crystallization behavior and electridcal properties were investigated. YMnO3 thin films annealed under Ar atmosphere showed a superior crystallinity and a very strong c-aix preferred-orientation which was a polar axis. Leakage current density of the films decreased with lowering oxygen partial pressure of the annealing atmosphere. C-V and P-E ferroelectric hysteresis were observed only in the thin film heat-treated under Ar atmosphere.In order to prepare YMnO3 thin films having both low leakage current and ferroelectricity, the annealing atmsphere should be kept under a proper oxygen partial pressure which was about 1 Pa in this work. Leakage current density at 1 volt, dielectric constant($\varepsilon$r), remanent polarization(Pr), and coercive field(Ec) were 1.7$\times$10-8 A/$\textrm{cm}^2$, 25, 1.08$\mu$C/$\textrm{cm}^2$, and 100 kV/cm, respectively.

• Transactions on Electrical and Electronic Materials
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• 제18권4호
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• pp.225-228
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• 2017

In this study, zinc tin oxide (ZTO) films were prepared on indium tin oxide (ITO) glasses and annealed at different temperatures under vacuum to investigate the correlation between the Ohmic/Schottky contacts, electrical properties, and bonding structures with respect to the annealing temperatures. The ZTO film annealed at $150^{\circ}C$ exhibited an amorphous structure because of the electron-hole recombination effect, and the current of the ZTO film annealed at $150^{\circ}C$ was less than that of the other films because of the potential barrier effect at the Schottky contact. The drift current as charge carriers was similar to the leakage current in a transparent thin-film device, but the diffusion current related to the Schottky barrier leads to the decrease in the leakage current. The direction of the diffusion current was opposite to that of the drift current resulting in a two-fold enhancement of the cut-off effect of leakage drift current due to the diffusion current, and improved performance of the device with the Schottky barrier. Hence, the thin film with an amorphous structure easily becomes a Schottky contact.

• 한국가스학회지
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• 제22권4호
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• pp.1-6
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• 2018

IMO에서 규정하는 LNG 벙커링 선박용 연료 탱크 중 C형 가압탱크는 내외 2중 용기로 구성된 초저온 탱크에 $10^{-2}$ Torr 진공과 펄라이트 단열재가 충전되는 것이다. 그러나 이 단열방식은 LNG 기화량이 하루당 2.0 % 내외로 증발율이 커서 보다 단열효과가 좋은 탱크가 요구되어 진다. 본 연구에서는 내외탱크 사이에 고진공을 적용하고 외부탱크의 내벽체에 중간 단열로 펄라이트 진공단열을 적용하는 단열 방식을 새로이 고안하여 열해석을 수행하였다. 이의 장점으로는 진공 공간의 감소로 고진공 형성 시간을 크게 감소되고, 진공도 $10^{-4}$ Torr 이하에서 하루당 증발율이 0.16 %에 불과한 매우 효율이 높은 탱크 단열방식이 되었다. 만약 현재의 IMO C형 탱크의 진공펄라이트 단열에서 진공이 파괴되는 경우, C형 탱크는 하루당 4.9 %의 증발이 발생하고 새 고안 탱크는 5.23 %로 거의 동일하게 된다.

• Applied Science and Convergence Technology
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• 제23권6호
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• pp.309-316
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• 2014

A large particle accelerator requires an ultrahigh vacuum (UHV) system of average pressure under $1{\times}10^{-7}$ Pa for mitigating the impact of beam scattering from the residual gas molecules. The surface inside the beam ducts should be controlled with an extremely low thermal outgassing rate under $1{\times}10^{-9}Pa{\cdot}m^3/(s{\cdot}m^2)$ for the sake of the insufficient pumping speed. To fulfil the requirements, the aluminum alloys were adopted as the materials of the beam ducts for large accelerator that thanks to the good features of higher thermal conductivity, non-radioactivity, non-magnetism, precise machining capability, et al. To put the aluminum into the large accelerator vacuum systems, several key technologies have been developed will be introduced. The concepts contain the precise computer numerical control (CNC) machining process for the large aluminum ducts and parts in pure alcohol and in an oil-free environment, surface cleaning with ozonized water, stringent welding process control manually or automatically to form a large sector of aluminum ducts, ex-situ baking process to reach UHV and sealed for transportation and installation, UHV pumping with the sputtering ion pumps and the non-evaporable getters (NEG), et al. The developed UHV technologies have been applied to the 3 GeV Taiwan Photon Source (TPS) and revealed good results as the expectation. The problems of leakage encountered during the assembling were most associated with the vacuum baking which result in the consequent trouble shootings and more times of baking. Then the installation of the well-sealed UHV systems is recommended.

• 한국수소및신에너지학회논문집
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• 제17권2호
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• pp.204-211
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• 2006

The electrolyte in the solid oxide fuel cell must be dense enough to avoid gas leakage and thin enough to reduce the ohmic resistance. In order to manufacture the thin and dense electrolyte layer, 8 mol% $Y_2O_3$ stabilized-$ZrO_2$ (8YSZ) electrolyte layers were coated on the porous tubular substrate by the novel vacuum slurry dip-coating process. The effects of the slurry concentration, presintering temperature, and vacuum pressure on the thickness and the gas permeability of the coated electrolyte layers have been examined in the vacuum slurry coating process. The vacuum-coated electrolyte layers showed very low gas permeabilities and had thin thicknesses. The single cell with the vacuum-coated electrolyte layer indicated a good performance of $495\;mW/cm^2$, 0.7 V at $700^{\circ}C$. The experimental results show that the vacuum dip-coating process is an effective method to fabricate dense thin film on the porous tubular substrate.

• 한국분말재료학회지
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• 제11권4호
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• pp.288-293
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• 2004

The application concept of using a fail safety filter on the filtering system is to prevent the particle leakage when the main filter element is broken at high temperature. In this study, the metal filters were fabricated by pressureless sintering method. The mixture of stainless steel powders and filler metal binder solved in the water solutions of 5% PVA was compacted to form the cylindrical filter without pressure. The compacted filter were sintered in the vacuum sintering furnace at 120$0^{\circ}C$ for 1 hour. The metal filter(produced with powder of 640-840 ${\mu}m$ size) having more than above 50% porosity, 500${\mu}m$ pore size, and permeability of 7.3${\times}$10$^{-11}$m$^{2}$ plugged within 2.5 minute to prevent the leakage of maximum slip particle size of less than 3${\mu}m$.

• Applied Science and Convergence Technology
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• 제23권2호
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• pp.90-96
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• 2014

Flexible $ZrO_2$ films as dielectric materials for high-energy-density capacitors were deposited on polyethylene terephthalate (PET) substrates by RF magnetron sputtering. The growth behavior, microstructure and electrical properties of the flexible $ZrO_2$ films were dependent on the sputtering pressure and gas ratio. Although $ZrO_2$ films were deposited at room temperature, all films showed a tetragonal crystalline structure regardless of the sputtering variables. The surface of the film became a surface with large white particles upon an increase in the $O_2/Ar$ gas ratio. The RMS roughness and crystallite size of the $ZrO_2$ films increased with an increase in the sputtering pressure. The electrical properties of the $ZrO_2$ films were affected by the microstructure and roughness. The $ZrO_2$ films exhibited a dielectric constant of 21~38 at 1 kHz and a leakage current density of $10^{-6}{\sim}10^{-5}A/cm^2$ at 300 kV/cm.

• 마이크로전자및패키징학회지
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• 제10권1호
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• pp.31-38
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• 2003

MEMS 소자는 현재의 전자산업환경에서 여러 요구조건을 만족시킬 수 있는 특징을 갖추고 있으며 이러한 MEMS 소자를 이용한 MEMS 구조물의 packaging 방법에 있어서는 내부 MEMS 소자의 동작을 위한 외부 환경으로부터의 보호를 위하여 Hermetic sealing에 대한 요구를 충분히 만족시켜야 한다. 본 논문에서는 이와 같은 MEMS device의 진공 패키지를 구현함에 있어서 기판내부에 수동소자를 실장할 수 있는 LTCC 기술$^{1)}$ 을 이용하여 진공 패키징하는 방법에 대하여 소개한다. 본 기술을 이용하는 경우 기존의 Hermetic sealing이외에 향후 적층 기판 내부에 수동소자를 내장시켜 배선 길이 및 노이즈 성분을 감소시켜 더욱 전기적 성능을 향상시킬 수 있는 장점이 있게된다. 본 논문에서는 LTCC기판을 이용하여 패키징 시킨 후, 내부 진공도에 영향을 줄 수 있는 계면들에서의 시간에 따른 진공도 변화로부터 leakage rate를 측정 (stacked via : $4.1{\pm}1.11{\times}10^{-12}$/Torr1/sec, LTCC 기판/AgPd/solder/Cu의 여러 가지 계면구조: $3.4{\pm}0.33{\times}10^{-12}$/ Torrl/sec)하여 LTCC 기판의 Hermetic sealing 특성에 관하여 조사하였다. 실제 적용의 한 예로 LTCC 기술을 이용하여 Bolometer를 성공적으로 진공패키징할 수 있었으며 실제 관찰된 이미지를 함께 소개한다.