• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.52-52
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• 2011

A novel deposition process for n-type nanocrystalline silicon (n-type nc-Si) thin films at room temperature has been developed by adopting the neutral beam assisted chemical vapor deposition (NBa-CVD). During formation of n-type nc-Si thin film by the NBa-CVD process with silicon reflector electrode at room temperature, the energetic particles could induce enhance doping efficiency and crystalline phase in polymorphous-Si thin films without additional heating on substrate; The dark conductivity and substrate temperature of P-doped polymorphous~nano crystalline silicon thin films increased with increasing the reflector bias. The NB energy heating substrate(but lower than $80^{\circ}C$ and increase doping efficiency. This low temperature processed doped nano-crystalline can address key problem in applications from flexible display backplane thin film transistor to flexible solar cell.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.273.2-273.2
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• 2014

Sputtering process has been widely used in Si-based semiconductor industry and it is also an ideal method to deposit transparent oxide materials for thin-film transistors (TFTs). The oxide films grown at low temperature by conventional RF sputtering process are typically amorphous state with low density including a large number of defects such as dangling bonds and oxygen vacancies. Those play a crucial role in the electron conduction in transparent electrode, while those are the origin of instability of semiconducting channel in oxide TFTs due to electron trapping. Therefore, post treatments such as high temperature annealing process have been commonly progressed to obtain high reliability and good stability. In this work, the scheme of electron-assisted RF sputtering process for high quality transparent oxide films was suggested. Through the additional electron supply into the plasma during sputtering process, the working pressure could be kept below $5{\times}10-4Torr$. Therefore, both the mean free path and the mobility of sputtered atoms were increased and the well ordered and the highly dense microstructure could be obtained compared to those of conventional sputtering condition. In this work, the physical properties of transparent oxide films such as conducting indium tin oxide and semiconducting indium gallium zinc oxide films grown by electron-assisted sputtering process will be discussed in detail. Those films showed the high conductivity and the high mobility without additional post annealing process. In addition, oxide TFT characteristics based on IGZO channel and ITO electrode will be shown.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.234.2-234.2
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• 2014

Organic light emitting diode (OLED) is considered as the next generation flat panel displays due to its advantages of low power consumption, fast response time, broad viewing angle and flexibility. For the flexible application, it is essential to develop thin film encapsulation (TFE) to protect oxidation of organic materials from oxidative species such as oxygen and water vapor [1]. In many TFE research, the inorganic film by atomic layer deposition (ALD) process demonstrated a good barrier property. However, extremely low throughput of ALD process is considered as a major weakness for industrial application. Recently, there has been developed a high throughput ALD, called 'spatial ALD' [2]. In spatial ALD, the precursors and reactant gases are supplied continuously in same chamber, but they are separated physically using a purge gas streams to prevent mixing of the precursors and reactant gases. In this study, the $Al_2O_3$ thin film was deposited by spatial ALD process. We characterized various process variables in the spatial ALD such as temperature, scanning speed, and chemical compositions. Water vapor transmission rate (WVTR) was determined by calcium resistance test and less than $10-^3g/m^2{\cdot}day$ was achieved. The samples were analyzed by x-ray photoelectron spectroscopy (XPS) and field emission scanning electron microscope (FE-SEM).

• Composites Research
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• v.17 no.3
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• pp.1-7
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• 2004

In the vacuum assisted RTM (VARTM) process that has become the center of attention for manufacturing massive composite structures, a good evacuation of air in the fiber preform is recognized as the prime factor. The microvoids, or the dry spots, are formed as a result of improper gate/vent locations and the mold geometry. The non-uniform resin velocity at the flow front leads to the formation of microvoids in the fibers, whereas the air in the microvoids can migrate along with the resin flow during mold filling. The residual air in the internal voids of a composite structure may cause a degradation of the mechanical properties as well as the structural failure. In this study, a unified macro- and micro analysis methods were developed to investigate the formation and transport of air in resin during VARTM process. A numerical simulation program was developed to analyze the three-dimensional flow pattern as well as the macro- and microscopic distribution of air in a composite part fabricated by VARTM process.

• Journal of the Korean Wood Science and Technology
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• v.35 no.3
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• pp.29-35
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• 2007

This research investigates the composites reinforced with fiberglass to wood and commercial particleboard using VARTM process to enhance the mechanical properties. Specimens were prepared from lumbers from thinning crop-trees and commercial particleboard. Matched specimen were reinforced on both sides with one layer of unidirectional fiberglass roving. Fiberglass reinforcement to wood and particleboard using VARTM process improved mechanical properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.253-253
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• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.28 no.5
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• pp.489-494
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• 2004

Long Period Gratings (LPG) is currently receiving considerable attention because of their consistent measuring results fur pressure, temperature, strain and flow. LPG is easier to prepare and has a high sensitivity compared with Fiber Bragg Gratings (FBG). In addition, this kind of optical fiber sensors could be used for implementations in various structures. In this paper, LPG was used to monitor in situ the resin flow and the curing process in VARTM (Vacuum Assisted Resin Transfer. Molding). In order to demonstrate the effectiveness of the method, FBG is inserted into the glass mat to monitor the resin flow using optical spectrum analyzer (OSA). The curing reactions in VARTM are also observed using the same method. From the results, the attenuation wavelength shift and the loss change of attenuation band can be obtained from the status of the RTM (Resin Transfer Molding) sample owing to the internal variations of the .effective index, temperature, and pressure. It is shown that the proposed LPG is more effective in monitoring the curing reaction than FBG.

• Composites Research
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• v.15 no.1
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• pp.21-31
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• 2002

To overcome the disadvantages of conventional excavation technology various trenchless (or excavation free, or no-dig) repair-reinforcement technologies have been developed and tried. But trenchless technologies so far developed have some drawbacks such as high cost and inconvenience of operation. In this study, a repairing-reinforcing process for underground pipes with glass fiber fabric polymer composites using VARTM (Vacuum Assisted Resin Transfer Molding) has been developed. The developed process requires shorter operation time and lower cost with smaller and simpler operating equipments than those of the conventional trenchless technologies. For the reliable operation of the developed method, a simple method to apply pressure and vacuum to the reinforcement was devised and flexible mold technology was tried. Also, resin filling and cure status during RTM process were monitored with a commercial dielectrometry cure monitoring system, LACOMCURE. From the investigation, it has been found that the developed repairing-reinforcing technology with appropriate process variables and on-line cure monitoring has many advantages over conventional methods.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.415.1-415.1
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• 2016

2009년도에 Perovskite가 태양전지에 처음 적용된 이후, Perovskite를 기반으로 하는 태양전지는 급속한 발전을 이루고 있으나, 향후 상용화를 위해서는 추가적인 공정개선 및 제조 단가를 낮추는 노력이 필수적이다. 초창기 Perovskite의 증착 공정은 One step deposition 방법이 사용되었으나, Layer의 thickness, uniformity 등을 조절하기 어려워 Sequential deposition 방법으로 개선되었다. 하지만 결과적으로 초기방법 대비 추가공정이 발생함에 따라 시간 및 비용의 증가가 불가피하였다. 제조단가 측면에서는 Perovskite 태양전지를 구성하는 재료 중 HTM(정공수송물질)을 구성하는 Spiro-MeOTAD의 비용이 가장 비싸다. 따라서 저비용 태양전지를 위해서는 HTM이 없는 구조가 필요하다. 이 페이퍼에서는 Perovskite 물질이 고흡광 능력 외에 충분한 전하수송능력을 보유한다는 점에 착안하여, Gas Pressure Assisted Modified One Step Deposition을 이용한 HTM Free Perovskite를 제작하고 기존의 Sequential Deposition Method 통해 만들어진 Perovskite 태양전지와 비교/분석하였다.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.96-101
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• 2008

The magnesium oxide (MgO) protective layer plays an important role in plasma display panels (PDPs). Our previous work demonstrated that the properties of MgO thin film could be improved, which were deposited by Ion-Beam-Assisted Deposition (IBAD). However arc discharge always occurs during the IBAD process. To avoid this problem, Oxygen-Neutral-Beam-Assisted Deposition (NBAD) is used to deposit MgO thin films in this paper. The energy of the oxygen neutral beam was used as the parameter to control the deposition. The experimental results showed that the oxygen neutral beam energy was effective in determining in structural and discharge characteristics. The lowest firing inception voltage, the highest brightness and the highest luminous efficiency were obtained when the MgO thin film was deposited with an oxygen neutral beam energy of 300eV. The surface morphology of MgO thin film was also analyzed using AFM (Atomic Force Microscopy) and SEM (Scanning Electron Microscopy).