Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2014.02a
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- Pages.234.2-234.2
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- 2014
Characterization of Al2O3 Thin Film Encasulation by Plasma Assisted Spatial ALD Process for Organic Light Emitting Diodes
- Yong, Sang Heon (School of Chemical Engineering, Sungkyunkwan University (SKKU)) ;
- Cho, Sung Min (School of Chemical Engineering, Sungkyunkwan University (SKKU)) ;
- Chung, Ho Kyoon (SKKU Advanced Institute of Nanotechnology (SAINT)) ;
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Chae, Heeyeop
(School of Chemical Engineering, Sungkyunkwan University (SKKU))
- Published : 2014.02.10
Abstract
Organic light emitting diode (OLED) is considered as the next generation flat panel displays due to its advantages of low power consumption, fast response time, broad viewing angle and flexibility. For the flexible application, it is essential to develop thin film encapsulation (TFE) to protect oxidation of organic materials from oxidative species such as oxygen and water vapor [1]. In many TFE research, the inorganic film by atomic layer deposition (ALD) process demonstrated a good barrier property. However, extremely low throughput of ALD process is considered as a major weakness for industrial application. Recently, there has been developed a high throughput ALD, called 'spatial ALD' [2]. In spatial ALD, the precursors and reactant gases are supplied continuously in same chamber, but they are separated physically using a purge gas streams to prevent mixing of the precursors and reactant gases. In this study, the