• 한국세라믹학회지
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• 제18권1호
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• pp.23-26
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• 1981

The electrical conductivity of highly pure polycrystalline $Yb_2O_3$ has been measured from 650 to 105$0^{\circ}C$ under oxygen pressure range of $10^{-5}$ to 102 torr. The conductivity dependence of oxygen pressure in the temperature region from 750 to 105$0^{\circ}C$ is approximated by $\sigma$ $\alpha$ $Po_2^{1/5.3}$. This shows that the conduction mechanism is associated with doubly ionized metal vacancies. Fairly low activation energy and the lack of oxygen pressure dependence are found over the temperature range of 650 to 75$0^{\circ}C$. The conduction mechanism can be explaned by not metal vacancies, but hopping oxygen ions in the oxide.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1288-1290
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• 2005

We report on the structural and electrical properties of amorphous Yttria-stabilized zirconia (YSZ) thin films which are the potential high-k gate dielectric material of organic thin film transistor (OTFT). To investigate the influence of the oxygen flow rate on the structural and electrical properties of the YSZ films, XRD, XPS, J-E, I-V were carried out in this work. Oxygen vacancies are expected to be the most predominant type of defect in metal-oxide dielectrics. The leakage current density decreased mainly because of the reduction of oxygen vacancies with increasing oxygen flow rate.

• 한국재료학회지
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• 제27권5호
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• pp.242-247
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• 2017

ZnO film was prepared on a p-type Si wafer and then annealed at various temperatures in air and vacuum conditions to research the electrical properties and bonding structures during the annealing processes. ZnO film annealed in atmosphere formed a crystal structure owing to the suppression of oxygen vacancies: however, ZnO annealed in vacuum had an amorphous structure after annealing because of the increment of the content of oxygen vacancies. Schottky contact was observed for the ZnO annealed in an air. O 1s spectra with amorphous structure was found to have a value of 529 eV; that with a crystal structure was found to have a value of 531.5 eV. However, it was observed in these results that the correlation between the electronic characteristics and the bonding structures was weak.

• 한국표면공학회지
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• 제29권6호
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• pp.660-665
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• 1996

Thin films of indium oxide and indium tin oxide have been prepared by d.c. magnetron sputtering onto the fused silica substrates kept at 90, 200 and $300^{\circ}C$. In order to elucidate the optical absorption process in low energy region below 3 eV, we have analyzed the absorption coefficients obtained from reflectance and transmittance measurements for these films based on the Lucovsky model. It has been found for the first time that a defect center in the band gap is located at 0.8~1.4 eV below the Fermi level in all films and arises from oxygen vacancies in their films. The optical absorption in low energy region is explained to be dominated by the transition of electrons trapped at the positively charged (+2e) oxygen vacancies with s-like nature to the conduction band formed from the 5s-orbit in indium atoms.

• 대한화학회지
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• 제61권1호
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• pp.7-11
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• 2017

The extended $H{\ddot{u}}ckel$ method is employed to analyze the interaction of carbon monoxide with the TiC(001) surfaces, both perfect and containing carbon vacancies. CO exhibits a similar ${\sigma}$-donation interaction for both $Ti_{25}C_{25}$ and $Ti_{25}C_{23}$ clusters, as deduced from the fact that the populations of the CO $5{\sigma}$ orbital are identical upon adsorption, but it bonds more strongly with the $Ti_{25}C_{23}$ than with the $Ti_{25}C_{25}$ because the metal d electron density in $Ti_{25}C_{23}$ provides ${\pi}$ back-bonding interactions with CO that are absent in $Ti_{25}C_{25}$. This work suggests that a difference in reactivity toward CO of stoichiometric TiC and TiC with carbon defects is connected with the occupancy of $2{\pi}^*$ orbitals that leads to a significant weakening of the C-O bond.

• 한국세라믹학회지
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• 제40권9호
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• pp.827-831
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• 2003

In proton-conducting perovskites, oxygen ions and protons make a diffusion pair for a chemical diffusion and thus lead to the transport of $H_2O$ under its chemical potential gradient. The present manuscript develops relationships between the chemical diffusion coefficient of $H_2O$ and the diffusion coefficients of protons and oxygen vacancies with an emphasis on the thermodynamic behavior of the oxygen vacancies. Depending on the degree of hydration X, two different expressions of the chemical diffusion coefficient were obtained : equation omitted and equation omitted.

• Bulletin of the Korean Chemical Society
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• 제3권1호
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• pp.18-23
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• 1982

The molar volumes, the molar heat capacities and the molar entropies of solid argon are calculated from 0 K to the triple point using the vacancies-in-solid model. In the partition function, the central pairwise additive (Mie-Lennard-Jones 12,6) potential is used by introducing numbers, which is obtained by summing powers over all lattice points of a face-centred cubic in terms of the distance between nearest neighbours. A method of iteration is employed to evaluate the potential parameter. The results are compared with experimental values and other theoretical values. The results show a fair agreement with the experimental results.

• Journal of the Korean Physical Society
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• 제73권10호
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• pp.1566-1570
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• 2018

We investigated the visible emission property of $SrTiO_3$ (STO) single crystals irradiated with gammy-ray (${\gamma}$-ray) at various total doses up to 900 kGy. The electric and optical absorption properties of the irradiated STO samples were hardly changed with the ${\gamma}$-ray irradiation, compared with those of un-irradiated STO. In contrast, the visible emission near 550 nm increased with the ${\gamma}$-ray dose increasing. While the development of the visible emission was indicative of the increase of oxygen vacancies inside STO by the ${\gamma}$-ray irradiation, the newly generated oxygen vacancies were not significantly harmful to the electric and optical properties of STO. We concluded that the STO single crystal should have a good tolerance against the damage by the ${\gamma}$-ray irradiation.

• Bulletin of the Korean Chemical Society
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• 제16권10호
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• pp.908-911
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• 1995

The EPR spectra of Cu-or Zr-doped BaTiO3 ceramics exhibited absorption signals with g∥=2.380 and g⊥=2.063 which are assigned to Ba1+(Ba2+ + e'→Ba1+) ion reduced by an electron that was produced from the oxygen vacancy (VO..). The intensity of these signals decreased as the temperature increased indicating that Ba1+ was changed to Ba2+ as the temperature increased. These ceramics also showed the EPR signal with g=1.997 around TC which arises from ionized Ba-vacancies, VBa'(VBa + e'→VBa'. In the orthorhombic and tetragonal phase region g=1.997 signal was not seen. The electrons generating from the oxidation of Ba1+ and ionized Ba-vacancies may contribute to a space charge which is responsible for a dielectric relaxation of these samples.

• Nuclear Engineering and Technology
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• 제51권5호
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• pp.1398-1405
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• 2019

We use a molecular dynamics simulation to explore thermal transport in oxide nuclear fuels with point defects. The effect of vacancy and substitutional defects on the thermal conductivity of plutonium dioxide and uranium dioxide is investigated. It is found that the thermal conductivities of these fuels are reduced significantly by the presence of small amount of vacancy defects; 0.1% oxygen vacancy reduces the thermal conductivity of plutonium dioxide by more than 10%. The missing of larger atoms has a more detrimental impact on the thermal conductivity of actinide oxides. In uranium dioxide, for example, 0.1% uranium vacancies decrease the thermal conductivity by 24.6% while the same concentration of oxygen vacancies decreases the thermal conductivity by 19.4%. However, uranium substitution has a minimal effect on the thermal conductivity; 1.0% uranium substitution decreases the thermal conductivity of plutonium dioxide only by 1.5%.