• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.277-282
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• 2017

Nickel germanide (NiGe) is one of the most promising alloy materials for source/drain (S/D) of Ge MOSFETs. However, NiGe has limited thermal stability up to $450^{\circ}C$ which is a challenge for fabrication of Ge MOSFETs. In this paper, a novel method is proposed to improve the thermal stability of NiGe using Co interlayer. As a result, we found that the thermal stability of NiGe was improved from $450^{\circ}C$ to $570^{\circ}C$ by using the proposed Co interlayer. Furthermore, we found that current-voltage (I-V) characteristic was improved a little by using Co/Ni/TiN structure after post-annealing. Therefore, NiGe formed by the proposed Co interlayer that is, Co/Ni/TiN structure, is a promising technology for S/D contact of Ge MOSFETs.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1267-1270
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• 2006

Organic light-emitting diode (OLED) display panel with $64\;{\times}\;64$ pixels utilizing the charge-pump (CP) pixel addressing method was fabricated using conventional thin-film processes. Each pixel consists of a-Si:H Schottky diode and $ITO/SiO_2/ITO$ capacitor. It is shown that CP-OLED is technically feasible for information display and a driving voltage below $4V_{pp}$ is enough for nominal operation.

• International Journal of Computer Science & Network Security
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• v.23 no.10
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• pp.73-80
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• 2023

The recent growth in the use of mobile devices has contributed to increased computing and storage requirements. Cloud computing has been used over the past decade to cater to computational and storage needs over the internet. However, the use of various mobile applications like Augmented Reality (AR), M2M Communications, V2X Communications, and the Internet of Things (IoT) led to the emergence of mobile cloud computing (MCC). All data from mobile devices is offloaded and computed on the cloud, removing all limitations incorporated with mobile devices. However, delays induced by the location of data centers led to the birth of edge computing technologies. In this paper, we discuss one of the edge computing technologies, i.e., cloudlet. Cloudlet brings the cloud close to the end-user leading to reduced delay and response time. An algorithm is proposed for scheduling tasks on cloudlet by considering VM's load. Simulation results indicate that the proposed algorithm provides 12% and 29% improvement over EMACS and QRR while balancing the load.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.40 no.12
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• pp.2503-2510
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• 2015

This paper presents a single-phase energy measurement IC to measure electric power quantities. The entire IC includes two programmable gain amplifiers (PGAs), two ${\sum}{\Delta}$ modulators, a reference circuit, a low-dropout (LDO) regulator, a temperature sensor, a filter unit, a computation engine, a calibration control unit, registers, and an external interface block. The proposed energy measurement IC is fabricated with $0.18-{\mu}m$ CMOS technology and housed in a 32-pin quad-flat no-leads (QFN) package. It operates at a clock speed of 4,096 kHz and consumes 10 mW in 3.3 V supply.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.6
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• pp.1046-1055
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• 1994

In this paper, to design high speed 1 line VRAM(Video RAM) suitable for image signal processing with ASIC(Application Specific IC) method, the VRAM memory core has been designed using 3-TR dual-port dynamic cell which has excellent access time and integration characteristics. High speed pipeline operation was attained by separating the first row from the subarray 1 memory core and the simultaneous I/Q operation for a selected single address was made possible by adopting data-latch scheme. Peripheral circuits were designed implementing address selector and 1/2V voltage generator. Integrated ASIC has been optimized using 1.5[ m] CMOS design rule.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.153-162
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• 2014

We show that carbon nanotube sensors with gold particles on the single-walled carbon nanotube (SWNT) network operate as Schottky barrier transistors, in which transistor action occurs primarily by varying the resistance of Au-SWNT junction rather than the channel conductance modulation. Transistor characteristics are calculated for the statistically simplified geometries, and the sensing mechanisms are analyzed by comparing the simulation results of the MOSFET model and Schottky junction model with the experimental data. We demonstrated that the semiconductor MOSFET effect cannot explain the experimental phenomena such as the very low limit of detection (LOD) and the logarithmic dependence of sensitivity to the DNA concentration. By building an asymmetric concentric-electrode model which consists of serially-connected segments of CNTFETs and Schottky diodes, we found that for a proper explanation of the experimental data, the work function shifts should be ~ 0.1 eV for 100 pM DNA concentration and ~ 0.4 eV for $100{\mu}M$.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.26 no.12B
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• pp.1695-1702
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• 2001

This paper describes a design of CMOS infrared (IR) wireless data link IC which can be used in IrDA(Infrared Data Association) application from 4 Mb/s to 100 Mb/s The implemented chip consists of variable gain transimpedance amplifier which has a gain range from 60 dB to 100 dB, AGC (automatic gain control) circuits, AOC(automatic offset control) loop, 4 PPM (pulse position modulation) modulator/demodulator and DLL(delay locked loops). This infrared optical link If was implemented using commercial 0.25 um 1-poly 5-metal CMOS process. The chip consumes 25 mW at 100 Mb/s with 2.5 V supply voltage excluding buffer amplifier. The die area of prototype IC is 1.5 mm $\times$ 1 mm.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.34 no.10B
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• pp.1104-1110
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• 2009

3D A/V services are expected to be a representative service of next generation because it can give more realistic feeling by providing dimensions to the 2D images. In terms of transmission part of 3D A/V systems, however, it is difficult to provide these services on real-time in the wireless OFDMA networks because it has to send large amount of traffic. To address this, we proposed a novel scheduling algorithm which separates a 3D traffic into base layer and enhancement layer, and provides different priority to them. From simulation results, we can show that the proposed algorithm can improve QoS.

• ETRI Journal
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• v.34 no.2
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• pp.216-225
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• 2012

This paper presents a transceiver module for human body communications whereby a spread signal with a group of 64 Walsh codes is directly transferred through a human body at a chip rate of 32 Mcps. Frequency selective digital transmission moves the signal spectrum over 5 MHz without continuous frequency modulation and increases the immunity to induced interference by the processing gain. A simple receiver structure with no additional analog circuitry for the transmitter has been developed and has a sensitivity of 250 ${\mu}V_{pp}$. The high sensitivity of the receiver makes it possible to communicate between mobile devices using a human body as the transmission medium. It enables half-duplex communication of 2 Mbps within an operating range of up to 170 cm between the ultra-mobile PCs held between fingertips of each hand with a packet error rate of lower than $10^{-6}$. The transceiver module consumes 59 mA with a 3.3 V power supply.

• Journal of Electrical Engineering and information Science
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• v.2 no.6
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• pp.202-207
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• 1997

Design and fabrication issues for an L-band GaAs Monolithic Microwave Integrated Circuit(MMIC) Voltage Controlled Oscillator(VCO) as a component of Personal Communications Systems(PCS) Radio Frequency(RF) transceiver are discussed. An ion-implanted GaAs MESFET tailored toward low current and low noise with 0.5mm gate length and 300mm gate width has been used as an active device, while an FET with the drain shorted to the source has been used as the voltage variable capacitor. The principal design was based on a self-biased FET with capacitive feedback. A tuning range of 140MHz and 58MHz has been obtained by 3V change for a 600mm and a 300mm devices, respectively. The oscillator output power was 6.5dBm wth 14mA DC current supply at 3.6V. The phase noise without any buffer or PLL was 93dB/1Hz at 100KHz offset. Harmonic balance analysis was used for the non-linear simulation after a linear simulation. All layout induced parasitics were incorporated into the simulation with EEFET2 non-linear FET model. The fabricated circuits were measured using a coplanar-type probe for bare chips and test jigs with ceramic packages.