• Journal of the Microelectronics and Packaging Society
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• v.8 no.2
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• pp.43-48
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• 2001

Economical consumption of energy, longer life of lamps, higher lighting comfort and new aesthetic of illumination is subject of numerous research and development works. The halogen lamps are an example of positive solution some of above mentioned problems. The electronic transformers are more frequent used for their supply. In comparison with conventional transformers they have less weight, less volume and 60% less power losses. Their advantages are particular visible, when the hybrid technique is applied. The paper presents the results of engineering research and development works carried out in Private Institute of Electronic Engineering, in R. & D. Center for Hybrid Microelectronics and Resistors and in Technical School of Communications in Krakow, in the field of the design and exploitation tests of hybrid converters 220V AC /12V DC (electronic transformers) and electronic ballasts destined for the supply of halogen lamps 20W to 150W and fluorescent lamps respectively. To perform the converters, thick film technology and surface mount technology were used. For the protection of converter electronic circuit the thick film temperature sensor and transistors were applied. Moreover the paper presents the base application circuits of elaborated converters, their technical parameters and exploitation results. The development perspectives of such domain of hybrid circuits are also discussed.

• Journal of the Institute of Electronics and Information Engineers
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• v.52 no.4
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• pp.9-16
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• 2015

Quick and safe message transmission is an important research topic of vehicular ad hoc networks (VANET). Most studies assume that the periodic broadcast of beacon-frames between vehicles increases the safety of the driver. In this paper, we propose a medium access control (MAC) protocol and location-based clustering for the VANET to support reliable data transfer. In our proposal, the cluster heade (CH) manage the access and allocate the resources of the node. Our proposal uses simulation to confirm the reduction of the transmission delay and the collision rate of the signal.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.283-287
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• 2017

Recently, Ni-InGaAs has been required for high-performance III-V MOSFETs as a promising self-aligned material for doped source/drain region. As downscaling of device proceeds, reduction of contact resistance ($R_c$) between Ni-InGaAs and n-InGaAs has become a challenge for higher performance of MOSFETs. In this paper, we compared three types of sample, vacuum, 2% $H_2$ and 4% $H_2$ annealing condition in rapid thermal annealing (RTA) step, to verify the reduction of $R_c$ at Ni-InGaAs/n-InGaAs interface. Current-voltage (I-V) characteristic of metal-semiconductor contact indicated the lowest $R_c$ in 4% $H_2$ sample, that is, higher current for 4% $H_2$ sample than other samples. The result of this work could be useful for performance improvement of InGaAs n-MOSFETs.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.4
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• pp.11-18
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• 2021

A novel microwave dielectric composite material for ultra-low temperature co-fired ceramics (ULTCC) with (1-x)BaWO₄-xBaV₂O₆ (x=0.54~0.85) composition was prepared by firing a mixture of BaWO₄ and BaV₂O₆. Shrinkage tests showed that the ceramic composite begins to densify at a temperature as low as 550℃ and can be sintered at 650℃ with 98% of relative density under the influence of BaV₂O₆. X-ray diffraction analysis showed that BaWO₄ and BaV₂O₆ coexisted and no secondary phase was detected in the sintered bodies, implying good chemical compatibility between the two phases. Near-zero temperature coefficients of the resonant frequency (𝛕_f) could be achieved by controlling the relative content of the two phases, due to their positive and negative 𝛕_f values, respectively. With increasing BaV₂O₆ (x from 0.53 to 0.85), the 𝛕_f value of the composites increased from -7.54 to 14.49 ppm/℃, ε_r increased from 10.08 to 11.17 and the quality factor (Q×f value) decreased from 47,661 to 37,131 GHz. The best microwave dielectric properties were obtained for x=0.6 samples with ε_r=10.4, Q×f=44,090 GHz, and 𝛕_f=-2.38 ppm/℃. Chemical compatibility experiments showed the developed composites are compatible with aluminum electrode during co-firing process.

• Communications of the Korean Mathematical Society
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• v.17 no.2
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• pp.221-227
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• 2002

In this paper we will show that the followings ; (1) Let R be a regular local ring of dimension n. Then $A_{n-2}$(R) = 0. (2) Let R be a regular local ring of dimension n and I be an ideal in R of height 3 such that R/I is a Gorenstein ring. Then [I] = 0 in $A_{n-3}$(R). (3) Let R = V[[ $X_1$, $X_2$, …, $X_{5}$ ]]/(p+ $X_1$$^{t1}$ + $X_2$$^{t2}$ + $X_3$$^{t3}$ + $X_4$$^2$+ $X_{5}$ $^2$/), where p $\neq$2, $t_1$, $t_2$, $t_3$ are arbitrary positive integers and V is a complete discrete valuation ring with (p) = mv. Assume that R/m is algebraically closed. Then all the Chow group for R is 0 except the last Chow group.group.oup.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.42 no.4
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• pp.864-870
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• 2017

This paper describes a Dual Buck Converter with mode control using variable Frequency to Voltage for portable devices requiring wide load current. The inherent problems of PLL compensation and efficiency degradation in light load current that the conventional hysteretic buck converter has faced have been resolved by using the proposed Dual buck converter which include improved PFM Mode not to require compensation. The proposed mode controller can also improve the difficulty of detecting the load change of the mode controller, which is the main circuit of the conventional dual mode buck converter, and the slow mode switching speed. the proposed mode controller has mode switching time of at least 1.5us. The proposed DC-DC buck converter was implemented by using $0.18{\mu}m$ CMOS process and die size was $1.38mm{\times}1.37mm$. The post simulation results with inductor and capacitor including parasitic elements showed that the proposed circuit received the input of 2.7~3.3V and generated output of 1.2V with the output ripple voltage had the PFM mode of 65mV and 16mV at the fixed switching frequency of 2MHz in hysteretic mode under load currents of 1~500mA. The maximum efficiency of the proposed dual-mode buck converter is 95% at 80mA and is more than 85% efficient under load currents of 1~500mA.

• Journal of Electrical Engineering and Technology
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• v.6 no.6
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• pp.817-823
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• 2011

This paper introduces an efficient voltage multiplier circuit for improved voltage gain and power efficiency of radio frequency identification (RFID) tags. The multiplier is fully integratable and takes advantage of both passive and active circuits to reduce the required input power while yielding the desired DC voltage. A six-stage voltage multiplier and an ultralow power voltage regulator are designed in a 0.13 ${\mu}m$ complementary metal-oxide semiconductor process for 2.45 GHz RFID applications. The minimum required input power for a 1.2 V supply voltage in the case of a 50 ${\Omega}$ antenna is -20.45 dBm. The efficiency is 15.95% for a 1 $M{\Omega}$ load. The regulator consumes 129 nW DC power and maintains the reference voltage in a 1.1% range with $V_{dd}$ varying from 0.8 to 2 V. The power supply noise rejection of the regulator is 42 dB near a 2.45 GHz frequency and performs better than -32 dB from 100 Hz to 10 GHz frequencies.

• Communications of the Korean Mathematical Society
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• v.37 no.2
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• pp.585-594
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• 2022

In this article we classify four dimensional gradient Ricci solitons (M, g, f) with half harmonic Weyl curvature and at most two distinct Ricci-eigenvalues at each point. Indeed, we showed that, in a neighborhood V of each point in some open dense subset of M, (V, g) is isometric to one of the following: (i) an Einstein manifold. (ii) a domain in the Riemannian product (ℝ², g₀) × (N, ${\tilde{g}}$), where g₀ is the flat metric on ℝ² and (N, ${\tilde{g}}$) is a two dimensional Riemannian manifold of constant curvature λ ≠ 0. (iii) a domain in ℝ × W with the warped product metric $ds^2+h(s)^2{\tilde{g}}$, where ${\tilde{g}}$ is a constant curved metric on a three dimensional manifold W.

• Communications of the Korean Mathematical Society
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• v.32 no.1
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• pp.19-27
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• 2017

We define and completely describe the structure of invo-clean rings having identity. We show that these rings are clean but not (weakly) nil-clean and thus they possess independent properties than these obtained by Diesl in [7] and by Breaz-Danchev-Zhou in [2].

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.16 no.1
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• pp.176-185
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• 2017

This paper describes a design of the WAVE antenna system in V2X wireless communication systems for Intelligent Transport Systems. The WAVE standard protocols defined 5.825~5.9GHz frequency range for wireless communications with V2X. In a recent, A study of WAVE communication system it has been studied mainly the base station and the OBU technology in order to improve the communication performance of the communication distance. In this paper, the proposed vehicular WAVE antenna using the EBG structure is to improve performance. The proposed WAVE antenna with EBG shows improvement of return loss and radiation beam pattern. The performance of WAVE communication systems for intelligent transport systems is dependent on the performance of antenna. The proposed vehicular antenna for WAVE communication systems shows improvement of return loss for performance.