• Journal of Ginseng Research
• /
• v.33 no.3
• /
• pp.183-188
• /
• 2009

To produce ginsenoside-Rg$_3$ enriched edible yeast, ginseng steaming effluent (GSE) was used for yeast cultivation in this study. Four kinds of edible yeasts were cultured in sterilized GSE (2% w/v, pH 6.5), without any nutrient, for 48 h at 30$^{\circ}C$, and their growth and ginsenoside compositions were determined. Among the yeasts, Saccharomyces cerevisiae showed the highest growth in the GSE medium. 267.1 mg of Saccharomyces cerevisiae biomass was produced from 1 g of GSE solid and ginsenoside-Rg$_3$ contents was determined with 0.033 mg. Saccharomyces cerevisiae also showed the best overall acceptability, with a herbal and fermentative flavor and a slightly bitter taste. From these data, we conclude that Saccharomyces cerevisiae is the excellent strain for production of ginsenoside-Rg$_3$ enriched edible yeast using GSE.

• Proceedings of the Korean Society of Crop Science Conference
• /
• 2017.06a
• /
• pp.166-166
• /
• 2017

OsTAT encodes a twin-arginine translocator (TAT) pathway signal protein. It contains a TRANS membrane domain and a chloroplast transit peptide. mRNA transcription profiling of OsTAT1 revealed that it is highly overexpressed in the leaves corroborating reports on its role in chloroplast. Moreover, its level of expression is more pronounced during earlier stages (germination, 3-leaf stage, and maximum tillering) of growth in rice. A lower disease progress curve of bacterial blight is evident in transgenic lines compared with the wild type, Dongjin indicating its involvement in immunity to Xoo. Expression pattern following infection of Xoo strain K2 depicts highest levels at 4 and 8 hour post-inoculation which implies crucial induction of resistance during early response. This study initially reports a new overview on the biological functions of plant's TAT pathway. Further molecular and genetic analyses are underway to provide detailed involvement of OsTAT in disease resistance.

• 한국초전도학회:학술대회논문집
• /
• v.10
• /
• pp.146-150
• /
• 2000

Two methods have been investigated to fabricate good quality step-edge Josephson junctions on STO, MgO, and LAO single crystal substrates. One is the annealing of substrates at 1050$^{\circ}$C in 1 atmospheric oxygen after Ar-ion milling. The other is the cleaning of step-edge by using Ar ion milling. The step-edge is characterized with atomic force microscope (AFM) images. And YBCO thin films are deposited by using pulsed laser. The I-V properties of step-edge junctions are characterized. The yield rate of step-edge junction is increased by new fabrication methods.

• The Bulletin of The Korean Astronomical Society
• /
• v.43 no.1
• /
• pp.55.1-55.1
• /
• 2018

Studies on rotation-powered pulsars with strong surface magnetic field may help us clarify the unclear link between magnetars and canonical radio pulsars because the magnetar-like emission is expected to be observed. PSR J1119-6127 associated with SNR G292.2-0.5 has a high magnetic field of $4.1{\times}1013$ gauss, and a young characteristic age of ~1700 years can be served as the good candidate to compare with magnetars and rotation-powered pulsars. The glitch accompanied by the radiative changes detected in 2007 is the first case we observed for a rotationally powered radio pulsar. This pulsar experienced magnetar-like outbursts in mid. 2016, similar to the 2006 transition occurred on the other radio-quiet rotation-powered pulsar with strong surface magnetic field, PSR J1846-0258. In this talk, I'll report the investigation with X-ray and gamma-ray data of this magnetar-like pulsar. A sudden decrease in the gamma-ray emission at the GeV band was detected immediately after the X-ray outburst. Accompanying with the disappearance of the radio pulsation, the gamma-ray pulsation cannot be resolved as well after the outburst. We tried to derive the timing behavior and some intriguing features of this pulsar in this work corresponding to the outburst using the Swift data, NuSTAR and XMM observations.

• Journal of Institute of Control, Robotics and Systems
• /
• v.20 no.4
• /
• pp.474-479
• /
• 2014

LEON3 is a 32-bit synthesizable processor based on the SPARC V8. It can be connected to AMBA 2.0 bus and has a 7- stage pipeline, IEEE-754 FPU and 256[KB] cache. It can be easily implemented using FPGA and used for a SoC design. DSU which comes with LEON3 can be used to control and monitor the operation of LEON3. And DSU makes it easy to set a debugging environment for the development of both hardware and software for an embedded systems based on LEON3. This paper presents the summary of the debugging tool for LEON3 based embedded systems. The debugging tool can initialize the target hardware, find out how the target hardware is configured, load application code to a specified memory space and run that application code. To provide users a debugging environment, it can set breakpoints and control the operation of LEON3 correspondingly. And function call trace is one of key functions of the debugging tool.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.6 no.2
• /
• pp.95-100
• /
• 2006

The GaAs-on-insulator (GOI) wafer fabrication technique has been developed by using ion-cut process, based on hydrogen ion implantation and wafer direct bonding techniques. The hydrogen ion implantation condition for the ion-cut process in GaAs and the associated implantation mechanism have been investigated in this paper. Depth distribution of hydrogen atoms and the corresponding lattice disorder in (100) GaAs wafers produced by 40 keV hydrogen ion implantation were studied by SIMS and RBS/channeling analysis, respectively. In addition, the formation of platelets in the as-implanted GaAs and their microscopic evolution with annealing in the damaged layer was also studied by cross-sectional TEM analysis. The influence of the ion fluence, the implantation temperature and subsequent annealing on blistering and/or flaking was studied, and the optimum conditions for achieving blistering/splitting only after post-implantation annealing were determined. It was found that the new optimum implant temperature window for the GaAs ion-cut lie in $120{\sim}160^{\circ}C$, which is markedly lower than the previously reported window probably due to the inaccuracy in temperature measurement in most of the other implanters.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.04a
• /
• pp.123-126
• /
• 2003

Recently, there is a growing concern on the photovoltaic effects using organic materials. This is a phenomena which converts the solar energy into the electrical one. We have fabricated a device structure of $ITO/PEDOT:PSS/CuPc/C_{60}/BCP/AI$. The PEDOT:PSS layer is made by spin coating, and the other organic layers are made by thermal vapor deposition. By measuring the current-voltage characteristics with an illumination of light, we have obtained value of Voc=0.38V, Jsc=$0.5mA/cm^{2}$. And a fill factor and efficiency are about 0.314 and 0.083%, respectively. A 500W xenon lamp(ORIEL) is used for a light source, and the light intensity illuminated into the device was about 10mW.

• Proceedings of the KIEE Conference
• /
• 1996.07c
• /
• pp.1825-1827
• /
• 1996

In this study, the Joint of 345kV OF $1C{\times}2000mm^2$ cable was developed to keep up with the trends that need higher-voltage & capacity underground transmission line. The type of joint developed was based on the two kinds of models that have had a good reliability internationally. The mechnic and electric characteristics of the sample specimen was managed in detail when it was manufactured and estimated. Especially, in order to prove the reliability of usage for 30 years, the method of long term aging test was studied. As a result of test, we knew that the joint developed had a good performance. From this study, it can be thought that future ultra-high voltage underground transmission line could be constructed by domestic technology.

• Transactions on Electrical and Electronic Materials
• /
• v.12 no.3
• /
• pp.106-109
• /
• 2011

We investigated the etching characteristics of titanium nitride (TiN) thin film in $BCl_3$/Ar inductively coupled plasma. The etching parameters were the gas mixing ratio, radio frequency (RF) power, direct current (DC)-bias voltages and process pressures. The standard conditions were as follows: total flow rate = 20 sccm, RF power = 500 W, DC-bias voltage = -100 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate of TiN thin film and the selectivity of TiN to $Al_2O_3$ thin film were 54 nm/min and 0.79. The results of X-ray photoelectron spectroscopy showed no accumulation of etch byproducts from the etched surface of TiN thin film. The TiN film etch was dominated by the chemical etching with assistance by Ar sputtering in reactive ion etching mechanism, based on the experimental results.

• Proceedings of the KIEE Conference
• /
• 1995.11a
• /
• pp.348-351
• /
• 1995

A modified silicon direct bonding method has been developed alloying an intimate contact between grooved and smooth mirror-polished oxide-free silicon wafers. A regular set of grooves was formed during preparation of heavily doped $p^+$-type grid network by oxide-masking und boron diffusion. Void-free bonded interfaces with filing of the grooves were observed by x-ray diffraction topography, infrared, optical. and scanning electron microscope techniques. The presence of regularly formed grooves in bending plane results in the substantial decrease of dislocation over large areas near the interface. Moreover two strongly misoriented waters could be successfully bonded by new technique. Diodes with bonded a pn-junction yielded a value of the ideality factor n about 1.5 and the uniform distribution of series resistance over the whole area of horded pn-structure. The suitability of the modified technique was confirmed by I - V characteristics of power diodes and reversly switched-on dynistor(RSD) with a working area about $12cm^2$. Both devices demonstrated breakdown voltages close to the calculation values.