• Journal of the Korean Home Economics Association
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• v.23 no.1
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• pp.11-17
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• 1985

This paper aims to examine the variety of the absorption of cotton, T/C and hemp fabrics seperately seperaterly sized by rice, wheat, potato, corn flour and pp.V.A.. Experimental variables occurring in the concentration of sizing agents, the water content of unsized fabrics and an iron temperature show the following results, 1. When fabrics sized, the rate of absorption increases according to the order of rice, corn, pp.V.A., potato, wheat flour for cotton fabrics, of rice, corn, pp.V.A., wheat, potato flour for hemp fabrics and of the rice, pp.V.A., potato, corn, wheat flour for T/C fabrics : rice flour shows an absorption rate highest among all the others mentioned above. 2. To a certain extent, the stronger the concentration of sizing agents, the higher the rate of absorption. 3. The higher fabrics density, the higher absorption rate. 4. The structure and hydrophilic property of the sized fabrics affect the rate of absorption. 5. The fabrics with water content of 20% before sizing it shows the rate of absorption highest. 6. An iron temperature after sizing fabrics shows the rate of absorption highest at the properest at the properest one : $180^{\circ}C$ for cotton, $150^{\circ}C$ for T/C and $200^{\circ}C$ for hemp fabrics.

• Journal of the Architectural Institute of Korea Structure & Construction
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• v.34 no.6
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• pp.55-61
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• 2018

This study aims to analyze the performance of Heated-nonslip using renewable energy to prevent nonslip freezing during winter. For this purpose, power generation system and congratulatory devices using solar energy are designed, and it is designed to provide regular electricity to heat up nonslip through Electrical storage system(ESS). In this study, It is intended to analyze the level of electrical energy suitable for nonslip using 24V or 48V, and to measure the temperature changes and temperature distribution according to the location of the test object. As a result of the experiment, nonslip's frame temperature was measured at $-7.5{\sim}-5^{\circ}C$ on average, and $-1{\sim}-2^{\circ}C$ on the heating cable during the supply of 24V and this could not be the solution for defrosting freezing nonslip in the winter. As a result of heating nonslip by supplying 48V with an electrical power of 8W, the temperature of the nonslip was shown to be between $5^{\circ}C$ and $11^{\circ}C$ to $13^{\circ}C$. Even if the power supply was switched on and off every minute, the temperature did not drop below $4^{\circ}C$ and the frozen ice melted on the nonslip without freezing.

• Journal of the Korean Society for Heat Treatment
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• v.32 no.4
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• pp.161-167
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• 2019

Impact toughness and fracture behavior were studied in five kinds of non-heat treating steels containing bainite; standard(0.25C-1.5Mn-0.5Cr-0.2Mo-0.15V), high V(0.3V), Ni(0.5Mn-2Ni), W(0.4W instead of Mo), and high C-Ni(0.35C-0.5Mn-2Ni) steels. The good hardness and impact toughness balance was exhibited in the $1100^{\circ}C$-rolled condition, while the impact toughness was deteriorated due to coarse grained microstructure in the $1200^{\circ}C$-rolled condition. The impact toughness decreased with increasing the hardness in all steels studied. The fracture behavior was also basically identical, that is, the fracture area was divided into 3 zones; shear and fibrous zone, fracture transition zone with ductile dimples and cleavage cracks, where the cracks initiate and grow to critical size, unstable cleavage fracture propagation zone. The energy absorbed for the critical crack formation through the plastic deformation inside the plastic zone in front of the notch root contributed to a mostly significant portion of the total impact energy.

• Journal of Auto-vehicle Safety Association
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• v.14 no.1
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• pp.45-54
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• 2022

Recently, the introduction of Cooperative Intelligent Transport Systems (C-ITS) has been attempted to solve the limitation of only the sensor of the vehicle itself. For example, vehicles traveling at intersections can drive more safely through C-ITS. By using V2X communication of WAVE and LTE, the driver can receive the status and time of traffic lights. However, LTE has a larger transmission delay time than WAVE, so timimg data may not match in real time. In this paper, using the SPaT message, it was confirmed that LTE has a larger C-ITS service transmission delay time than WAVE. Finally, it was confirmed that the timing data of SPaT provided by LTE corrected by the algorithm is similar to SPaT provided by WAVE. It was confirmed that safer intersection driving is possible based on real-time.

• Bulletin of the Korean Chemical Society
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• v.34 no.12
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• pp.3641-3648
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• 2013

Energy transfer and bond dissociation of $C-H_{methyl}$ and $C-H_{ring}$ in excited toluene in the collision with $H_2$ and $D_2$ have been studied by use of classical trajectory procedures at 300 K. Energy lost by the vibrationally excited toluene to the ground-state $H_2/D_2$ is not large, but the amount increases with increasing vibrational excitation from 5000 and $40,000cm^{-1}$. The principal energy transfer pathway is vibration to translation (V-T) in both systems. The vibration to vibration (V-V) step is important in toluene + $D_2$, but plays a minor role in toluene + $H_2$. When the incident molecule is also vibrationally excited, toluene loses energy to $D_2$, whereas it gains energy from $H_2$ instead. The overall extent of energy loss is greater in toluene + $D_2$ than that in toluene + $H_2$. The different efficiency of the energy transfer pathways in two collisions is mainly due to the near-resonant condition between $D_2$ and C-H vibrations. Collision-induced dissociation of $C-H_{methyl}$ and $C-H_{ring}$ bonds occurs when highly excited toluene ($55,000-70,400cm^{-1}$) interacts with the ground-state $H_2/D_2$. Dissociation probabilities are low ($10^{-5}{\sim}10^{-2}$) but increase exponentially with rising vibrational excitation. Intramolecular energy flow between the excited C-H bonds occurring on a subpicosecond timescale is responsible for the bond dissociation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.733-736
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• 2001

Instead of a solution technigue producing amorphous LiV$_3$O$_{8}$ form, we prepared Lithium vanadate glass by melting Li$_2$O-P$_2$O$_{5}$-V$_2$O$_{5}$, composition in pt. crucible and by quenching on the copper plate. From the crystallization of Li$_2$O-P$_2$O$_{5}$-V$_2$O$_{5}$, we could abtain crystal phase, LiV$_3$O$_{8}$. The material heat-treated at lower-temperature, 25$0^{\circ}C$ was less crystalline, but had higher capacity. In present paper, we describe eletrochemical properties during crystallization process and find the best crystallization condition of Li$_2$O-P$_2$O$_{5}$-V$_2$O$_{5}$ glass as cathod material.cathod material.

• Electrical & Electronic Materials
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• v.7 no.2
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• pp.138-144
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• 1994

Electrical conduction phenomena of $C_{22}$-quinolium(TCNQ) Langmuir- Blodgett(LB) films are reported through a study of current-voltage(I-V) characteristics along a perpendicular direction. The I-V characteristics were investigated by applying a step or a pulse voltage to the specimen as well as changing temperatures in the range of 20-250[.deg. C] It show an ohmic behavior in low-electric field, and a nonohmic behavior in high-electric field. This nonohmic behavior has been interpreted in terms of a conduction mechanism of space-charge limited current and Schottky effect. When the electric field is near the strength of 10$_{6}$ V/cm, there occur anomalous phenomena similar to breakdown. When step or pulse voltage is applied, the breakdown voltage shifts to the higher one as the step or pulse time width becomes shorter. To see the influence of temperature, current was measured as a function of temperature under the several bias voltages, which are lower than that of breakdown. It shows that the current increases to about 103 times near 60-70[.deg. C], and remains constant for a while up to around 150[.deg. C] and then suddenly drops. We have also performed a DSC(differential scanning calorimetry) measurement with $C_{22}$-quinolium(TCNQ) powder in the range of 30-300[.deg. C]. These results imply that the anomalous phenomena occuring in the high electric field are caused by the electrical and internal thermal effect such as a joule heating.ating.

• Microbiology and Biotechnology Letters
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• v.18 no.5
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• pp.511-516
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• 1990

A high-alcohol producing yeast strain had sugar and alcohol tolerance was isolated from soil and identified as Saccharomyces cerevisiae Dl according to the Lodder's yeast taxonomic studies. On investigation of the characteristics of the strain, it could grow in 60% glucose, within 15% ethanol and in the YPD medium containing 2.0 mM copper. It had 39.1% the inhibition rate of fermentation efficiency and 8% viability after 2 days in the YPD medium containing 15% ethanol. Its optimum initial pH, growth temperature, initial glucose concentration for the production of alcohol showed pH 4.5, $30^{\circ}C$, and 30%, respectively. Saa:hwomyce8 mvisiae Dl produced 14.0% (wlv) alcohol when incubated at $30^{\circ}C$, with orbital shaking 150 rpm for 72 h in a medium (pH 4.5) containing 30% (wfv) glucose.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.39 no.1
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• pp.31-36
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• 2002

Low energy boron ions were implanted into the preamorphized and crystalline silicon substrates to form 0.2${\mu}m$ $p^+-n$ junctions. The rapid thermal annealing(RTA) was used to annihilate the crystal defects due to implantation and to activate the implanted boron ions, and the furnace annealing was employed to reflow the BPSG(bolo-phosphosilicate glass). The implantation conditions for Gepreamorphization were the energy of 45keV and the dose of 3$\times$1014cm-2. BF2 ions employed as a p-type dopant were implanted with the energy of 20keV and the dose of 2$\times$1015cm-2. The thermal conditions of RTA and furnace annealing were $1000^{\circ}C$/10sec and $850^{\circ}C$/40min, respectively. The junction depths were measured by SIMS and ASR techniques, and the 4-point probe was used to measure the sheet resistances. The electrical characteristics were analyzed via the leakage currents of the fabricated diodes. The single thermal processing with RTA produced shallow junctions of good qualities, and the thermal treatment sequence of furnace anneal and RTA yielded better junction characteristics than that of RTA and furnace anneal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.237-238
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• 2008

The films of Vanadium tungsten oxide, $V_{1.85}W_{0.15}O_5$, were grown on Pt/Ti/$SiO_2$/Si substrate by RF sputtering method. The $V_{1.85}W_{0.15}O_5$ thin films deposited on Pt/Ti/$SiO_2$/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $300^{\circ}C$ were 55, with a dielectric loss of 1.435, respectively. Also, the TCR values of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $300^{\circ}C$ were about -3.6%/K.