• Korean Journal of Food Science and Technology
• /
• v.38 no.2
• /
• pp.256-261
• /
• 2006

Soybeans were fermented with Monascus sp. to select strain with highest mevinolin production through solidstate fermentation. Monascus pilosus IFO 480 showed highest yield of 2.2 mg mevinolin per g dry weight without citrinin, toxic fungal secondary metabolite, as byproduct. Nutrient broth used for soybean fermentation with Monascus sp. was composed of 3.4 rice powder, 1.1 peptone, 2.6 glycine, 12.9 glucose, initial pH 6.0 (%, w/v). Mevinolin was present in fermentation substrate largely as hydroxy carboxylate form (open lactone, 91.8-96.8%), which is used as hypocholesterolemic agent. Production of mevinolin continued up to 50 days fermentation time at $30^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.44 no.1
• /
• pp.97-103
• /
• 1995

This paper reports the following two topics : $\circled1$ ozone concentration (O$\sub$3con/) and discharge characteristics in flowing O$\sub$2/ with variation of Re$\sub$3/ at high voltage nozzle (HVN) of HVN 10 type ozonizer. $\circled2$ O$\sub$3con/ with variation of Re$\sub$3/ at HVN of HVN 25 type ozonizer. The important conclusions obtained from this paper are as follows. 1) In HVN 10 type ozonizer : $\circled1$ The discharge pattern can be controlled by adjustment of the Re$\sub$3/. $\circled2$ V$\sub$c/ is inversely proportional to pulse width (P$\sub$w/) and pulse frequency (P$\sub$f) $\circled3$ O$\sub$3con/ increase as decreasing of Re$\sub$3/ for constant P$\sub$w/ and P$\sub$f/. $\circled4$ O$\sub$3con/ increase as decreasing of P$\sub$w/, O$\sub$3con/ is proportional to P$\sub$f/. 2) In HVN 25 type ozonizer : O$\sub$3con/ of HVN 25 type ozonizer can increase than that of HVN 10 type ozonizer, according to parallel circuit of applied voltage and serial of supplied gas. As a result, we can obtain O$\sub$3con/ of 825[ppm] as the maximun value.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.58 no.10
• /
• pp.1976-1981
• /
• 2009

Transparent conducting aluminum-doped zinc oxide (AZO) thin films were deposited on Coming glass substrate using an Gun-type rf magnetron sputtering deposition technology. The AZO thin films were fabricated with an AZO ceramic target (Zn: 98wt.%, $Al_2O_3$: 2wt.%). The AZO thin films were deposited with various growth conditions such as the substrate temperature, oxygen pressure. X -ray diffraction (XRD), UV/visible spectroscope, atomic force microscope (AFM), and Hall effect measurement system were done in order to investigate the properties of the AZO thin films Among the AZO thin films prepared in this study, the one formed at conditions of the substrate temperature $100^{\circ}C$, Ar 50 sccm, $O_2$ 5 sccm and working pressure 5 motor showed the best properties of an electrical resistivity of $1.763{\times}10^{-4}\;[{\Omega}{\cdot}cm]$, a carrier concentration of $1.801{\times}10^{21}\;[cm^{-3}]$, and a carrier mobility of $19.66\;[cm^2/V{\cdot}S]$, which indicates that it could be used as a transparent electrode for thin film transistor and flat panel display applications.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.41 no.6
• /
• pp.652-660
• /
• 1992

0.10Pb(SbS11/2TSnS11/2T)OS13T-0.25PbTiOS13T-0.65PbZrOS13T ceramics modified by LaS12TOS13T(1[mol%]) and MnOS12T(0-0.30[mol%]) were fabricated. The structural and pyroelectric properties with contents of MnOS12T were studied. Crystal structure of a specimen was rhombohedral type and average grain sizes were decreased with increasing the contents of MnOS12T. Relative dielectric constant and dielectric loss factor were minimum in the specimens doped 0.24[mol%]MnOS12T. (PbS10.99TLaS10.01T)[(SbS11/2TSnS11/2T) TiS10.25TZrS10.65T]OS13T specimen modified 0.24[mol%]MnOS12T showed the good pyroelectric properties and pyroelectric coefficient and voltage responsivity were 6.73x10S0-8T[C/cmS02TK], 125[V/W], respectively. Voltage responsivity was increased with decreasing the chopper frequency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05c
• /
• pp.49-52
• /
• 2003

The role of gas ratio with the crystallization behavior and electrical properties in $Bi_{3.25}La_{0.75}Ti_3O_{12}$(BLT) thin films by rf magnetron sputtering method has not been precisely defined. In this work, the ferroelectric properties of these films with gas variation was investigated. BLT thin films were deposited on the Pt/Ti bottom electrode by rf magnetron sputtering method and then they were crystallized by rapid thermal annealing (RTA). The experiment showed that all BLT films indicated perovskite polycrystalline structure with preferred orientation (020) and (0012). And no pyrochlore phase was observed. The fabricated film annealed with $O_2$ of 15 sccm showed that value of leakage current was $9.67{\times}10^{-7}A/cm^2$ at 50kV /em, and the value of remanent polarization (2Pr=Pr+-Pr-) was $11.8{\mu}C/cm^2$. Therefore we induce access to memory device application by rf-magnetron sputtering method in this report.

• Journal of Surface Science and Engineering
• /
• v.45 no.2
• /
• pp.75-80
• /
• 2012

A sputter-sublimation source was tested for high rate deposition of protective coating of PEMFC(polymer electrolyte membrane fuel cell) with high electrical conductivity and anti-corrosion capability by DC biasing of a metal rod immersed in inductively coupled plasma. A SUS(stainless steel) tube, rod were tested for low thermal conductivity materials and copper for high thermal conductivity ones. At 10 mTorr of Ar ICP(inductively coupled plasma) with 2.4 MHz, 300 W, the surface temperature of a SUS rod reached to $1,289^{\circ}C$ with a dc bias of 150 W (-706 V, 0.21 A) in 2 mins. For 10 min of sputter-sublimation, 0.1 gr of SUS rod was sputter-sublimated which is a good evidence of a high rate deposition source. ICP is used for sputter-sublimation of a target material, for substrate pre-treatment, film quality improvement by high energy particle bombardment and reactive deposition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1999.11a
• /
• pp.159-162
• /
• 1999

All solid state thin film micro-batteries consisting of lithium metal anode, an amorphous LiPON electrolyte and cathode of vanadium oxide have been fabricated and characterized, which were fabricated with cell structure of Li/LiPON/V$_2$O$\sub$5/Pt. The vanadium oxide thin films were formed by d.c. reactive sputtering on Pt current collector. After deposition of vanadium oxide films, in-situ growths of lithium phosphorus oxynitride film were conducted by r.f. sputtering of Li$_3$PO$_4$ target in mixture gas of N$_2$ and O$_2$. The pure metal lithium film was deposited by thermal evaporation on thin film LiPON electrolyte. The cell capacity was about 45${\mu}$Ah/$\textrm{cm}^2$ $\mu\textrm{m}$ after 200 cycle. No appreciable degradation of the cell capacity could be observed after 50 cycles .

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.4
• /
• pp.314-318
• /
• 2002

The etching behaviors of the ferroelectric $YMnO_3$ thin films were studied by an inductively coupled plasma (ICP). The maximum etch rate of $YMnO_3$ thin film is 300 ${\AA}/min$ at Ar/$Cl_2$of 2/8, RF power of 800W, dc bias voltage of 200V, chamber pressure of 15mTorr and substrate temperature of $30^{\circ}C$. Addition of $CF_4$ gas decrease the etch rate of $YMnO_3$ thin film. From the results of XPS analysis, nonvolatile $YF_x$ compounds were found on the surface of $YMnO_3$ thin film which is etched in Ar/$Cl_2$/CF$_4$plasma. The etch profile of YMnO$_3$film is improved by addition of $CF_4$ gas into the Ar/$Cl_2$ plasma. These results suggest that YF$_{x}$ compound acts as a sidewall passivants which reduce the sticking coefficient of chlorine on $YMnO_3$.

• Mycobiology
• /
• v.45 no.4
• /
• pp.409-420
• /
• 2017

Foliar sprays of three plant resistance inducers, including chitosan (CH), potassium sorbate (PS) ($C_6H_7kO_2$), and potassium bicarbonates (PB) ($KHCO_3$), were used for resistance inducing against Erysiphe cichoracearum DC (powdery mildew) infecting okra plants. Experiments under green house and field conditions showed that, the powdery mildew disease severity was significantly reduced with all tested treatments of CH, PS, and PB in comparison with untreated control. CH at 0.5% and 0.75% (w/v) plus PS at 1.0% and 2.0% and/or PB at 2.0% or 3.0% recorded as the most effective treatments. Moreover, the highest values of vegetative studies and yield were observed with such treatments. CH and potassium salts treatments reflected many compounds of defense singles which leading to the activation power defense system in okra plant. The highest records of reduction in powdery mildew were accompanied with increasing in total phenolic, protein content and increased the activity of polyphenol oxidase, peroxidase, chitinase, and ${\beta}$-1,3-glucanase in okra plants. Meanwhile, single treatments of CH, PS, and PB at high concentration (0.75%, 2.0%, and/or 3.0%) caused considerable effects. Therefore, application of CH and potassium salts as natural and chemical inducers by foliar methods can be used to control of powdery mildew disease at early stages of growth and led to a maximum fruit yield in okra plants.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.386-386
• /
• 2010

최근 널리 보급되고 있는 치과용 임플란트는 티타늄(Ti) 또는 티타늄 합금(Ti-6Al-4V) 보철과 크라운을 연결하여 사용하고 있다. 티타늄은 생체 친화성이 우수하나, 생체 활성도가 없어 치유기간이 긴 단점이 있다. 이를 보완하기 위해 인체 경조직과 유사한 수산화아파타이트(hydroxyapatite, $Ca_{10}(PO_4)_6(OH)_2)$를 티타늄 임플란트 표면에 코팅하는 방법이 연구되고 있으나 수산화아파타이트 코팅은 티타늄과의 접착성이 나쁘기 때문에 시술 및 사용과정에서 코팅층이 임플란트로부터 박리되는 문제점이 있다. 본 연구에서는 티타늄과 수산화아파타이트 사이에서 접착력을 향상시키는 buffer layer로서 지르코니아(8YSZ, 8mol% Yttria-stabilized zirconia)를 연구하였다. 지르코니아는 고온에서 안정하며, 티타늄 합금과 수산화아파타이트 사이의 반응을 방지하며, 박막밀도와 기계적 강도가 좋은 생체세라믹스이다. 지르코니아 박막을 펄스 레이저 증착법을 이용하여 증착 온도 $600^{\circ}C$, 레이저 fluence $2\;J/cm^2$에서 산소($O_2$) 분압을 바꿔 가며 증착하였다. 그 위에 수산화아파타이트 박막을 역시 펄스 레이저 증착법으로 증착하였다. Scratch test와 Pull-off test를 통해 접착력을 평가한 결과 지르코니아 buffer layer 삽입에 의해 티타늄 합금과 수산화아파타이트 사이의 접착력이 향상되었음을 확인하였다. 또한 산소분압이 박막의 특성 및 접착력에 미치는 영향을 고찰하였다.