• Korean Journal of Weed Science
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• v.7 no.2
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• pp.220-235
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• 1987

The experiment was carried out to find the feasibility of using Oxyfluorfen in the paddy fields by investigating the difference of selective activity of Oxyfluorfen among rice cultivars and major paddy weed species. The dosage of Oxyfluorfen that show selective activity between rice cultivars and weed species ranged from 0.1 to 0.4kg ai/ha. The degree of growth inhibition was in order of whole-plant soaking application > root soaking application > stem bandage application, and in that case $10^{-5}$M Oxyfluorfen was treated after emergence. Especially the growth inhibition of rice cultivars and Cyperus serotinus was low, among others. Photosynthesis was severely inhibited at the Oxyfluorfen level above $10^{-4}$ M in all the tested weeds, but inhibition of respiration was not to be seen. Isolated single cells of two rice cultivars and Cyperus serotinus were tolerant to $10^{-5}$M Oxyfluorfen,but those of Echinochloa crus-galli and Sagittaria pygmaea were susceptible comparatively. The growth inhibition of suspension cultured rice cell induced by the increments of Oxyfluorfen concentration, and the degree of inhibition was higher in C.V. Mushakdanti than in C.V. Aichiasahi.

• New Physics: Sae Mulli
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• v.68 no.12
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• pp.1315-1323
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• 2018

We studied the carbonization due to the annealing condition of waste coffee powder for application as an active anode material for lithium-ion batteries (LIBs). The coffee powder used as an active anode material for LIBs was obtained from coffee beans, not from a coffee shells. The waste coffee powder was dried in air and heat-treated in an $Ar/H_2$ atmosphere to obtain a pore-forming activated carbon powder. The specific capacity of the sample annealed at $700^{\circ}C$ was still 303 mAh/g after 1000 cycles at a current density of 1000 mA/g and with a coulombic efficiency of over 99.5%. The number of pores and the pore size of the waste coffee powder were increased due to chemical treatment with KOH, which had the some effect as an increased specific surface area. The waste coffee powder is considered to be a very promising active anode material because of both its excellent electrochemical properties due to enhanced carrier conduction and its being a cost effective resource for use in LIBs.

• Journal of the Korean Wood Science and Technology
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• v.30 no.1
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• pp.63-71
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• 2002

The bark of P. alba × glandulosa, P. euramericana and P. nigra × maximounczii F₁, several Populus trees, were collected, extracted with acetone-H₂O(7:3, v/v), fractionated with hexane, chloroform and ethylacetate, and freeze dried to give some dark brown powder. Each fraction of the powder was chromatographed on a Sephadex LH-20 column using a series of aqueous methanol and ethanol-hexane mixture as eluents and then identified by thin layer chromatography using TBA and 6% acetic acid as developing solvents. The structures of the isolated compounds were characterized by ¹H, ¹³C and 2D-NMR tools including mass spectrometry. Most of the compounds were flavonoids and salicin derivatives as follows: (+)-catechin, taxifolin, aromadendrin, eriodictyol, naringenin, sakuranetin, sakuranetin-5-O-𝛽-D-glucopyranoside, neosaturanin, salireposide, p-coumaric acid, and aesculin from P. alba × glandulosa, (+)-catechin, salireposide, populoside and salicortin from P. euramericana and (+)-catechin, quercetin, padmatin, salireposide, populoside and salicortin from P. nigra × maximounczii F₁.

• Journal of Life Science
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• v.34 no.1
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• pp.9-17
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• 2024

Diabetes mellitus (DM) is one of the main global health problems. Chronic exposure to hyperglycemia can lead to cellular dysfunction that may become irreversible over time, a process that is termed glucose toxicity. Our perspective about glucose toxicity as it pertains to the pancreatic β-cell is that the characteristic decreases in insulin secretion are caused by regulated apoptotic gene expression. In this study, we examined whether ferulic acid protects INS-1 pancreatic cells against high glucose-induced apoptosis. High glucose concentration (30 mM) induced glucotoxicity and death of INS-1 pancreatic β cells. However, treatment with 1, 5, 10, or 20 μM ferulic acid increased the cell viability in a concentration-dependent manner. Treatment with ferulic acid dose-dependently decreased the intracellular levels of reactive oxygen species, thiobarbituric acid reactive substances, and nitric oxide in INS-1 pancreatic β cells pretreated with high glucose. These effects influence the apoptotic pathway, increasing the expression of the anti-apoptotic protein Bcl-2 and reducing the levels of pro-apoptotic proteins, including Bax, cytochrome C, and caspase 9. Annexin V/propidium iodide staining indicated that ferulic acid significantly reduced high glucose-induced apoptosis. These results demonstrate that ferulic acid is a potential therapeutic agent to protect INS-1 pancreatic β cells against high glucose-induced apoptosis.

• Journal of the Korean Chemical Society
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• v.36 no.6
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• pp.914-918
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• 1992

The preferential transport phenomena of neutral cation-anion moieties in neutral macrocycle-facilitated emulsion liquid membrane were described in this study. Emulsion membrane systems consisting of (1) aqueous source phase containing 0.001M $M(NO_3)_2$ (M = $Mn^{2+}$, $Co^{2+}$, $Ni^{2+}$, $Cu^{2+}$, $Zn^{2+}$, $Sr^{2+}$, $Cd^{2+}$, $Pb^{2+}$) (2) a toluene membrane containing 0.02M ligand (DB$N_3O_2$, DB18C6) and the surfactant span 80 (sorbitan mono oleate) (3% v/v) and (3) aqueous receiving phase containing $Na_2S_2O_3$ or $NaNO_3$ were studied with respect to the disappearence of metal ions from the source phase as a function of time. Cation transport rates for various two component equimolar mixture of metal ions were determinded. $Cd^{2+}$ was transported higher rates than the other $M^{2+}$ in the mixture solution.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1771-1773
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• 1999

Ferroelectric PZT(10/90)/(90/10)heterolayered thin films were fabricated by the alkoxide-based Sol-Gel method Electric and dielectric properties of PZT(10/90)/(90/10) heterolayered thin films have been investigated, focusing on the effect of PZT/PZT and PZT/electrode interface on the heterolayered films. Dielectric constant increased with increasing the number of coatings. Increasing the number of coatings, remanent polarization and coercive field were decreased and the values of the PZT-6 heterolayered thin films deposited on Pt/Ti/$SiO_2$/Si were $7.18{\mu}C/cm$, $68.5kV/cm^2$, respectively. Leakage current, densities were increased with increasing the number of coatings, and the value of the PZT-4 film deposited on the Pt/Ti/$SiO_2$/Si substrate was about $7{\times}10^{-8}A/cm^2$ at 0.05MV/cm.

• Journal of Information Display
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• v.9 no.3
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• pp.23-27
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• 2008

This paper reports that well-balanced white emission with three primary colors can be achieved with a simple white organic light-emitting diode (WOLED) structure of ITO / $\alpha$-NPD (50 nm) / $\alpha$-NPD: Btp2Ir(acac) (8 wt%, 6 nm) / $\alpha$-NPD (5 nm) / BCP (3 nm) / $Alq_3$: C545T (0.5 wt%, 10 nm) / $Alq_3$ (40 nm) / LiF (0.5 nm) / Al (100 nm). The external quantum efficiency of the device reached 3.8% at a current density (luminance) of 4.6 mA/$cm^2$ (310 cd/$m^2$), and the maximal luminance of the device reached 19,000 cd/$m^2$ at 11.5 V. The insignificant blue shift of the emitting color with an increasing current density can be attributed to the narrowing of the exciton formation zone width.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.33-33
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• 2009

Silicon nano-structures have great potential in bionic sensor applications. Atomic force microscopy (AFM) anodic oxidation have many advantages for the nanostructure fabrication, such as simple process in atmosphere at room temperature, compatibility with conventional Si process. In this work, we fabricated simple FET structures with channel width W~ 10nm (nanowire) and $1{\mu}m$ (nano-ribbon) on ~10, 20 and 100nm-thinned silicon-on-insulator (SOI) wafers in order to investigate the surface effect on the transport characteristics of nano-channel. For further quantitative analysis, we carried out the 2D numerical simulations to investigate the effect of channel surface states on the carrier distribution behavior inside the channel. The simulated 2D cross-sectional structures of fabricated devices had channel heights of H ~ 10, 20, and 100nm, widths of L ~ $1{\mu}m$ and 10nm respectively, where we simultaneously varied the channel surface charge density from $1{\times}10^{-9}$ to $1{\times}10^{-7}C/cm2$. It has been shown that the side-wall charge of nanowire channel mainly affect the I-V characteristics and this was confirmed by the 2D numerical simulations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.50-50
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• 2009

In this paper, the plasma doping is performed on p-type wafers using $PH_3$ gas(10 %) diluted with He gas(90 %). The wafer is placed in the plasma generated with 200 W and a negative DC bias (1 kV) is applied to the substrate for 60 sec under no substrate heating. the flow rate of the diluted $PH_3$ gas and the process pressure are 100 sccm and 10 mTorr, respectively. In order to diffuse and activate the dopant, annealing process such as rapid thermal annealing (RTA) is performed. RTA process is performed either in $N_2$, $O_2$ or $O_2+N_2$ ambient at $900{\sim}950^{\circ}C$ for 10 sec. The sheet resistance is measured using four point probe. The shallow n+/p doping profiles are investigated using secondary ion mass spectromtry (SIMS). The analysis of crystalline defect is also done using transmission electron microscopy (TEM) and double crystal X-ray diffraction (DXRD).

• Proceedings of the IEEK Conference
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• 2004.06a
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• pp.213-216
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• 2004

This paper describes design and implementation of the 5.5 GHz VCO with parallel-branch inductors using 0.8${\mu}m$ SiGe HBT process technology. The proposed parallel-branch inductor shows $12 \%$ improvement in quality factor in comparison with the conventional inductor. A phase noise of -93 dBc/Hz is measured at 100 kHz offset frequency, and the harmonics in the VCO are suppressed less than -23 dBc. The single-sided output power of the VCO is -6.5$\pm$1.5 dBm. The manufactured VCO consumes 15.0 mA with 2.5 V supply voltage. Its chip areas are 1.8mm ${\times}$ 1.2mm.