• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.409-409
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• 2012

모바일 및 TV, 모니터 부분에서 AMOLED의 비약적인 시장 점유율 확대와 더불어 TFT 소자 부문에서도 많은 집중과 연구개발이 이루어지고 있다. 높은 이동도를 필요로 하는 AMOLED의 구동 회로에 채널층으로서 a-Si이 낮은 이동도로 인한 한계에 부딪히며 더 이상 쓰일 수 없게 되었고, 현재 우수한 이동도와 균일성, 제조 원가 절감의 효과 등 많은 장점을 보유한 산화물 TFT가 접목되고 있다. 현재까지 IGZO, ZnO 등이 많이 연구되며 실제로 AMOLED 용 TFT 소자에 적용 되고 있다. 본 연구에서는 산화물질인 ZTO (Zinc-Tin-Oxide)를 이용하여 TFT를 제작하였다. n-type 웨이퍼에 PECVD를 이용하여 $SiO_2$를 100 nm 증착한 뒤 spin coater로 ZTO용액을 30 nm 증착하였다. ZTO의 최적화된 열처리 온도인 $450^{\circ}C$에서 annealing을 해준 다음에 thermal evaporator로 source와 drain을 증착하였다. Gate 컨택을 위하여 웨이퍼 후면에 silver paste를 이용해 소자를 완성하였다. 산화물질 특성상 환경변화에 민감한 경향성을 보이기 때문에 현재 산화물 TFT는 신뢰성 분석에 많은 연구가 진행되고 있다. 완성된 ZTO TFT 소자를 빛과 수분에 일정한 시간 노출시킨 뒤 I-V 측정을 통하여 소자 열화를 분석하였다.

• Korean Journal of Materials Research
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• v.4 no.2
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• pp.213-218
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• 1994

제올라이트 분말을 기본재료로 하는 전기유변유체의 전기 및 유변학적 특성이 연구되었다. 전기장 인가시 높은 한계응력을 얻기 위하여 비교적 유전상슈가 큰 5종류의 유전유체를 선택하여 제올라이트 분말과 혼합하여 전기유변유체를 준비하였다. Couette형 rheometer를 이용하여 유변유체의 한계응력을 인가된 전기장 및 온도의 함수로서 측정하였다. 이중 chlorinate hydrocabon oil과 제올라이트 분말을 혼합한 전기유변유체의 한계응력은 6KPa(E=4KV/mm, T=$25^{\circ}C$)로서 최대치를 기록하였다. 측정된 한계응력은 온도가 상승하면 점차 감소하는 반면 전류밀도는 온도에 따라 증가하였다. 전류밀도에 대한 Arrhenius 그라프에서 전기전도에 대한 활성화 에너지는 약 0.7eV였으며 이는 제올라이트 분말에 포함된 $Na^{+}$ 이온의 확산에 기인하는 것으로 분석되었다.

• Journal of Powder Materials
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• v.14 no.6
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• pp.367-371
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• 2007

P/M high speed steel (1.26% C, 4.42% Cr, 6.54% W, 4.92% Mo, 3.21 % V, 8.77% Co, bal. Fe) was applied to hot former die. It showed that the die life became 2.7 times higher than that of cast/wrought SKH 55 tool steel which is commercially used. The increase of die life was corresponding to the improved hardness and transverse rupture strength of PM high speed steel due to the finer grain and carbide as well as the uniform carbide distribution. The P/M high speed steel with the promoted die life could be an alternative to the conventional SKH55.

• Journal of Surface Science and Engineering
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• v.50 no.4
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• pp.272-276
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• 2017

The response of AISI 310 type austenitic stainless steel to the novel low temperature plasma carburizing process has been investigated in this work. This grade of stainless steel shows better corrosion resistance and high temperature oxidation resistance due to its high chromium and nickel content. In this experiment, plasma carburizing was performed on AISI 310 stainless steel in a D.C. pulsed plasma ion nitriding system at different temperatures in $H_2-Ar-CH_4$ gas mixtures. The working pressure was 4 Torr (533Pa approx.) and the applied voltage was 600 V during the plasma carburizing treatment. The hardness of the samples was measured by using a Vickers micro hardness tester with the load of 100 g. The phase of carburized layer formed on the surface was confirmed by X-ray diffraction. The resultant carburized layer was found to be precipitation free and resulted in significantly improved hardness and corrosion resistance.

• Journal of Microbiology and Biotechnology
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• v.3 no.3
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• pp.174-180
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• 1993

A strain SMF14 producing an extracellular $\beta$-lactamase was isolated from soil and identified to be a strain of Streptomyces aureofaciens. $\beta$-Lactamase was purified from the cell free culture broth through batchwise hydroxyapatite adsorption, anion exchange chromatography on DEAE Sephadex A-50, gel filtration on Sephadex G-75, and adsorption chromatography on hydroxyapatite. The molecular mass was estimated to be about 43 kDa by SDS-PAGE. The $\beta$-lactamase had substrate specificity to penicillins and it was inhibited by clavulanic acid, being classified to the group 2a of penicillinase.. The optimal reaction pH and temperature were pH 6.0~7.5 and $50^{\circ}C$. The $K_m, and V_{max}$ values of $\beta$-lactamase for penicillin G were calculated to be 1.72 mM and 5.4$\times$$10^5 \mu M \cdot min^{-1}$, respectively.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.346-349
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• 1988

Conductance technique is the moat accurate method and gives more detailed information about interface of the MIS structure than other methods. With the measurement of the equivalent parallel conductance and capacitance, the characterization of Si-SiN interface is developed. The interface state density of Si-SiN is obtained by $8{\times}10^{11}$ - $6{\times}10^{12}(eV^{-1}cm^{-2}$). After the positive B-T stress is performed on the sample, the interface state density gets increased. The interface state density is not effected by the D.C. stress.

• The Korean Journal of Ceramics
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• v.7 no.1
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• pp.1-5
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• 2001

Inorganic-organic hybrid Li$^+$ ion conductors were prepared by the sol-gel process. Tetramethyl orthosilicate (TMOS), polyethylene glycol 200 (PEG$_200$) and lithium bis (trifluoro-methylsulfony) imide were used as raw materials and $H_2O$ was used as a solvent. Hybrid Li$^+$ ion conductor prepared by the sol-gel process showed very high ion conductivities of log${\sigma}_R.T$(S/cm)=-3.73, log${\sigma}_60$(S/cm)=-3.00 at room temperature and $60^{\circ}C$, respectivery. Decomposition voltage was 3.1 V.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.416-418
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• 2000

Thin films of phase-pure perovskite $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ (PLT) were deposited in-situ onto Pt/Ti/$SiO_2$/Si substrates by pulsed laser deposition. We have systematically investigated the variation of grain sizes depending on the process condition. Both in-situ annealing and ex-situ annealing treatments have been compared depending on the annealing time. The grain sizes of PLT thin films were successfully controlled 260 to 350 nm by changing process parameters. Microstructural and electrical properties of the film were investigated by C-V measurement, leakage current measurement and SEM. Two-step process to grow $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ (PLT) films was adopted and verified to be useful to enlarge the grain size of the film and to enhance the leakage current characteristics.

• Journal of ILASS-Korea
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• v.8 no.2
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• pp.24-30
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• 2003

An experimental study was performed to investigate the influence factors of drop formation in electrohydrodynamic atomization. The mode of electrohydrodynamic atomization depended on the various factors such as the flow rate of the liquid, the inner diameter of the nozzle, the distance between the nozzle tip and the ground electrode, the shape of the ground electrode. and the applied high voltage. This work was performed to investigate the experimental analysis for the flow pattern visualization of droplets, and the relationship between voltage application and the behavior of liquid atomization. Uniform drops of different sizes can be obtained at the inception of the spindle mode by charging the flow rate and the electric field. The drop size also decreased when the flow rate was raised for the spindle mode. The whipping motion occurred beyond 7kV and before the corona started to take effect.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.2
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• pp.93-97
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• 1990

Interfacil charge approximations and structures at doped semiconductor interfaces were proposed. Rectifying phenomena at the III-V compound semiconductor (p-GaP, p-InP, n-GaAs)/$CsNO_3$ aqueous electrolyte interfaces were qualitatively analyzed in terms of their cyclic current-voltage characteristics. The current-voltage characteristic curves, the ion adsorption and potential barrier processes at the semiconductor interfaces were verified using continuous cyclic voltammetric methods. The pn or np junction structures and the related rectifying types at the doped semi-condudtor-electrolyte inferfaces are determined by the space charges.