대한전자공학회논문지 (Journal of the Korean Institute of Telematics and Electronics)
- 제27권2호
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- Pages.93-97
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- 1990
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- 1016-135X(pISSN)
Doping된 Ⅲ-Ⅴ族 化合物 半導體 界面에서 空間電荷效果
Space Charge Effects at Doped Ⅲ-Ⅴ Compound Semiconductor Interfaces
초록
도핑된 半導體 界面의 界面電荷 近似式과 構造를 提案하였다. III-V族 化合物 半導體인 p-GaP,p-InP,n-GaAs와
Interfacil charge approximations and structures at doped semiconductor interfaces were proposed. Rectifying phenomena at the III-V compound semiconductor (p-GaP, p-InP, n-GaAs)/
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