• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.978-980
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• 1999

In this paper, DC degradation of ZnO varistor sintered in the atmospheres of nitrogen and oxygen was investigated. The content of $SiO_2$ containing 0.0, 0.2, 0.5 mol% respectively was addicted for the improvement of degradation property. ZnO varistor was fabricated in the special electrical furnace which had the vacuum system. The temperature and the voltage for the DC degradation test were $115{\pm}2^{\circ}C$, $0.85V_{1mA/cm^2}$. The time conditions for this test were 0, 2, 4, 8 hours and Current-voltage analysis is used to determine nonlinear coefficients($\alpha$). Frequency analysis are accomplished for the understanding of electrical properties as DC degradation test. In this experiment, We concluded that nonlinear coefficient decreased as the amount of $SiO_2$ addition increased, but degradation rate coefficient increased as the amount of $SiO_2$ addition increased. Also, degradation test with the analysis of equivalent circuit showed that the degradation phenomenon of ZnO varistor wasn't linearity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.23-24
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• 2006

We have synthesized electroluminescence materials. including [2-(2-hydroxyphenyl)benzoxazole] (Zn(HPB)$_2$), [(2-(2-hydroxyphenyl)benzoxazole)(8-hydoxyquinoline)] (Zn(HPB)q) and [(1, 10-phenanthroline)(8-hydroxyquinoline)] Zn(phen)q. The ionization potential (IP) and electron affinity (EA) of each Zn-complex was measured using cyclic-voltammetry (C-V). Basing on the consideration of matched in the energy levels of the materials. We investigated the electron transporting properties of Zn(HPB)q and Zn(phen)q compared with $Alq_3$, and also we investigated the hole blocking properties of Zn(HPB)$_2$, compared with BCP. As a result, we used Zn-complex to enhance the performance of OLED. Therefore, we demonstrate that Zn(HPB)q and Zn(phen)q are useful as an electron transporting material. Zn(HPB)$_2$ is also good a hole blocking material.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.109.2-109.2
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• 2012

연구에서는 co-sputtering 시스템을 이용하여 아나타세 $TiO_2$의 도핑 농도 변화에 따른 다성분계 $TiO_2$-ITO (TITO) 박막의 전기적, 광학적, 구조적 특성 변화를 알아보고 고 효율을 가지는 인광 유기발광 다이오드를 제작 하였다. 상온에서 최적화된 다성분계 TITO 투명 전극의 급속 열처리 시 $600^{\circ}C$ 급속 열처리 조건에서 매우 낮은 18.06 ohm/sq.면저항, $5.1{\times}10^{-4}$ ohm-cm 비저항과 가시광선 영역 400~550 nm 에서 87.96 %이상의 높은 광학적 투과율과 4.71 eV의 일함수를 확보할 수 있었다. 또한TITO 박막을 양극으로 하여 OLED 소자를 제작한 후 그 성능을 평가하였다. 기존의 ITO 전극과 비교하면 다성분계 TITO 인광 유기 발광 다이오드의 quantum efficiencies (21.69 %)와 power efficiencies (90.92 lm/W)로 ITO 투명전극과 매우 유사함을 알 수 있었고 아나타세 $TiO_2$가 도핑된 TITO 투명 전극의 급속 열처리 공정에도 불구하고 매우 평탄한 표면을 나타냄을 SEM 이미지를 통하여 확인할 수 있었다. 이러한 TITO 투명 전극의 우수한 전기적, 광학적, 구조적 특성은 indium saving 투명 전극으로써 고가의 ITO 박막의 대치가능성을 나타낸다.

• Journal of the Korean Magnetics Society
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• v.19 no.4
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• pp.133-137
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• 2009

$MnGeP_2$ thin films grown on GaAs exhibit room-temperature ferromagnetism with $T_C{\sim}$320 K, based on both magnetization and resistance measurements. The coercive fields at 5, 250, and 300 K are 3870, 1380 and 155 Oe, respectively. The anomalous Hall effect was observed, indicating spin polarization of the carriers. Hysteresis has been observed in both magnetoresistance and Hall measurements. The current-voltage characteristics of a $MnGeP_2$ film grown on an n-type GaAs substrate display semiconducting behavior.

• Environmental Analysis Health and Toxicology
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• v.13 no.1_2
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• pp.1-9
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• 1998

The ROS-producing potency of chromium compounds of several oxidation states were determined in the H4 cells. $K_2Cr_2O_7$ as Cr (VI), synthetic Cr (V) compounds and Cr (III) as TPP produced high level of ROS. However, ROS values of Cr-picolinate as Cr (III), CrCl$_2$, CrCI$_2$, were almost equal to the control. The effects of physiological antioxidants compounds which react with free radicals were examined for their effects on chromate-induced production of reactive oxygen species (ROS) in A549 cells after the addition of $K_2Cr_2O_7$. The compounds used were vitamin C (ascorbate), vitamin E ($\alpha$-tocopherol), superoxide dismutase (SOD) and catalase. The preincubation of ascorbate (200uM) with A549 cells for 20hr resulted in a significant reduction of hexavalent chromate(100uM) induced ROS. However, there is no effects of preincubation of the cells with vitamin E succinate (10 and 20uM, 20hr) on the ROS production. Also, the effects of Cr (VI) on the cell cycle of A549 cells was measured by adding the DNA intercalating agent, propidium iodide. S phase of the cell cycle was increased by the chromium (VI) compounds up to 20uM indicating toxicity or possible mitogenic action of the cell. The shoulder in Go/G1 phase at 20uM Cr (VI) with 24 hr treatment indicates apoptosis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.3
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• pp.207-213
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• 2003

The Sr$\_$0.7/Bi$\_$2.6/Ta$_2$O$\_$9/(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO$_2$/SiO$_2$/Si) using RF magnetron sputtering method. The structural and electrical properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealed atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grain largely grew in oxygen annealing atmosphere. The maximum remnant polarization and the coercive electric field in oxygen annealing atmosphere are 12.40[${\mu}$C/cm$^2$] and 30[kV/cm] respectively. The dielectric constant and leakage current density of capacitors annealed oxygen atmosphere are 340 and 2.13${\times}$10$\^$-9/ [A/cm$^2$] respectively. The fatigue characteristics of SBT capacitors did not change up to 10$\^$10/ switching cycles.

• Advances in nano research
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• v.3 no.2
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• pp.111-121
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• 2015

$CoFe_2O_4$ nanotubes and porous nanorods were prepared via a simple one-pot template-free hydrothermal method and were used as an adsorbent for the removal of dye contaminants from water. The properties of the synthesized nanotubes and porous nanorods were characterized by electron diffraction, transmission electron microscopy and x-ray powder diffraction. The Adsorption characteristics of the $CoFe_2O_4$ were examined using polar red dye and the factors affecting adsorption, such as, initial dye concentration, pH and contact time were evaluated. The overall trend followed an increase of the sorption capacity reaching a maximum of 95% dye removal at low pHs of 2-4. An enhancement in the removal efficiency was also noticed upon increasing the contact time between dye molecules and $CoFe_2O_4$ nanoparticles. The final results indicated that the $CoFe_2O_4$ nanotubes and porous nanorods can be considered as an efficient low cost and recyclable adsorbent for dye removal with efficiency 94% for Cobalt ferrite nanotubes and for Cobalt ferrite porous nanorods equals 95%.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.580-585
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• 2004

Silicon dioxide (SiO$_2$) is widely used as a gate dielectric material for thin film transistors (TFT) and semiconductor devices. In this paper, SiO$_2$ films were grown by APCVD(Atmospheric Pressure chemical vapor deposition) at the high temperature. Experimental investigations were carried out as a function of $O_2$ gas flow ratios from 0 to 200 1pm. This article presents the SiO$_2$ gate dielectric studies in terms of deposition rate, refrative index, FT-IR, C-V for the gate dielectric layer of thin film transistor applications. We also study defect passivation technique for improvement interface or surface properties in thin films. Our passivation technique is Forming Gas Annealing treatment. FGA acts passivation of interface and surface impurity or defects in SiO$_2$ film. We used RTP system for FGA and gained results that reduced surface fixed charge and trap density of midgap value.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.2
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• pp.118-123
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• 2010

The eco-friendly technologies have been extended as matter of international concern due to various diseases and syndromes according to an environmental pollution. In this study, we have manufactured a ceramic cluster with thick film type for anion generation equipment which is maximized anion but minimized ozone contents generated. To develop the formulation of ceramic cluster, we conducted the $Mg_2SiO_4$ powders doped with 10 vol% glass frits as Na-Zn-B-O system and sintered at $1050^{\circ}C$ for 2 hours in air for starting materials and investigated the matching properties between the Ag-Pd electrode and the starting materials. The sintered sample for the composition of cluster has 6.7 of dielectric constant and 32 kV/mm of withstand voltage. The yield of anions was measured according to an electrode pattering, discharge gap between electrode, and thickness of electrode protective layer in the cluster of thick film type. We have manufactured the ceramic clusters with optimized thick film structure that have an anion over a hundred particles and the ozone of 0.6 ppb generated.

• Bulletin of the Korean Chemical Society
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• v.9 no.1
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• pp.1-4
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• 1988

Rates of solvolysis of trans-[Co$(N-eten)_2Cl_2$]$^+$ have been investigated using spectrophotometric method at various pressures and temperatures in the mixtures of water with the t-butyl alcohol which possesses a high structure inducing capacity in water. The values of ${\Delta}V^{\neq}$ obtained from pressure effect on the rate constants were 2.55∼ 5.83 $cm^3mol^{-1}$. These values were discussed in terms of dissociative mechanism. Extrema found in the variation of ${\Delta}H^{\neq}$ and ${\Delta}S^{\neq}$ with solvent composition correlated with extrema in the variation of the physical properties of the mixtures. The logarithms of rate constants correlated linearly with both Grunwald-Winstein parameter and the reciprocal of dielectric constant ($Ds^{-1}$). The gradient, m of Grunwald-Winstein plot for the trans-[Co$(N-eten)_2Cl_2$]$^+$ was 0.09, which is significantly lower than those for the other cobalt (Ⅲ)-dichloro complexes. It was suggested that the reaction is an Id mechanism with long extension of Co-Cl bond in the transition state, as found for the C-Cl bond in the transition state for the solvolysis of t-butyl chloride.