• Journal of Microbiology and Biotechnology
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• v.18 no.4
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• pp.670-675
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• 2008

A laccase was isolated from the culture filtrate of the basidiomycete Fomitella fraxinea. The enzyme was purified to electrophoretical homogeneity using ammonium sulfate precipitation, anion-exchange chromatography, and gel-filtration chromatography. The enzyme was identified as a monomeric protein with a molecular mass of 47 kDa by sodium dodecyl sulfate-polyacrylamide gel electrophoresis (SDS-PAGE) and gel-filtration chromatography, and had an isoelectric point of 3.8. The N-terminal amino acid sequence for the enzyme was ATXSNXKTLAAD, which had a very low similarity to the sequences previously reported for laccases from other basidiomycetes. The optimum pH and temperature for 2,2'-azino-bis(3-ethylbenzothiazoline-6-sulfonate) (ABTS) were 3.0 and $70^{\circ}C$, respectively. The enzyme also showed a much higher level of specific activity for ABTS and 2,6-dimethoxyphenol (DMP), where the $K_m$ values of the enzyme for ABTS and 2,6-DMP were 270 and $426{\mu}M$, respectively, and the $V_{max}$ values were 876 and $433.3{\mu}M/min$, respectively. The laccase activity was completely inhibited by L-cysteine, dithiothreitol (DTT), and sodium azide, significantly inhibited by $Ni^+,\;Mn^{2+}$, and $Ba^{2+}$, and slightly stimulated by $K^+$ and $Ca^{2+}$.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.76.2-76.2
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• 2010

질산 용액을 이용한 처리를 통해서 실리콘 웨이퍼 위에 누설 전류가 thermal oxidation 방법과 비슷한 수준의 얇은 실리콘 산화막을 형성할 수 있다. 이러한 처리 방법은 thermal oxidation에 비해서 낮은 온도에서 공정이 가능하다는 장점을 가진다. 이 때 질산 용액으로 68 wt% $HNO_3$을 쓰는데, 이 용액에만 넣었을 때에는 실리콘 산화막이 어느 정도 두께 이상은 성장하지 않는 단점이 있다. 그렇기 때문에 실리콘 웨이퍼를 68 wt% $HNO_3$에 넣기 전에 seed layer 산화막을 형성 시킨다. 본 연구에서는 p-type 웨이퍼를 phosphorus로 도핑해서 에미터를 형성 시킨 후에 seed layer를 형성 시키고 68 wt% $HNO_3$를 이용해서 에미터 위의 실리콘 산화막을 성장 시켰다. 이 때 보다 더 효과적인 seed layer를 형성 시키는 용액을 찾아서 실험하였다. 40 wt% $HNO_3$, $H_2SO_4-H_2O_2$, HCl-$H_2O_2$ 용액에 웨이퍼를 10분 동안 담그는 것을 통해서 seed layer를 형성하고, 이를 $121^{\circ}C$인 68 wt% $HNO_3$에 넣어서 실리콘 산화막을 성장시켰다. 이렇게 형성된 실리콘 산화막의 특성은 엘립소미터, I-V 측정 장치, QSSPC를 통해서 알아보았다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.184-184
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• 2009

This paper introduces the characteristics of SnO2 inorganic film deposited by radio-frequency magnetron sputtering as an alternative alignment layer for liquid crystal display (LCD) applications. The pretilt angle of the SnO2 layer was shown to be a function of the ion beam(IB) incident angle, a planer alignment of nematic liquid crystal was achieved. The about $1.8^{\circ}$ of stable pretilt angle was achieved at the range from 1500 ~ 2500eV of incident energy. To characterize the film shows atomic force microscopy (AFM) on the IB irradiated SnO2 surfaceand the X-ray phtoelectron spectroscopy analysis showed that the liquid crystal(LC) alignment on the IB irradiated $SnO_2$ surface was due to the reformation of Sn-O bonds. Also, Figure 1 shows that The alignment capability of the IB irradiated SnO2 layers is maintained until annealing temperature of $200^{\circ}C$. Comparable electro-optical characteristics to rubbed polyimide were also achieved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.465-466
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• 2009

Dye-sensitized Solar Cell (DSC) is a new type of solar cell by using photocatalytic properties of $TiO_2$. The electric potential distribution in DSCs has played a major role in the operation of such cells. $TiO_2$ thin films were deposited on the ITO substrate by Nd:YAG Pulsed Laser Deposition(PLD) at room temperature and post-deposition annealing at $500^{\circ}C$ in flowing $O_2$ atmosphere for 1hour. The structural properties of $TiO_2$ thin films have investigated by X-ray diffraction(XRD). We manufactured DSC unit cells then I-V and efficiency were tested by solar simulator.

• Korean Journal of Veterinary Research
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• v.36 no.2
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• pp.395-403
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• 1996

Monoclonal antibodies(MAbs) against field isolates of the bovine rotavirus A strain(G6), V strain(G10) and reference I-801 strain(G8) were produced and characterized. Six MAbs(4C2, 4D9, 5E1, 5E7, 5D5, 3E4) against A strain had neutralizing activity and reacted only with the G6 bovine rotaviruses determined by fluorescence focus neutralization (FFN) test. Otherwise, five neutralizing MAbs(1G2, 2G6, 5E2, 5E12, 5H7) against I-801 strain neutralized the G6 and G8 bovine rotaviruses. Five non-neutralizing MAbs(5F12, 7F12, 5E11, 2A11, 2B12) were VP6-specific and cross-reacted with all bovine and porcine rotaviruses examined by fluorescence antibody(FA) test. None of the MAbs reacted with bovie viral diarrhea virus(BVDV) and bovine coronavirus(BCV) determined by FA and FFN test.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.216-216
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• 2003

The layered nickel oxides (LiNiO$_2$) have been studied for possible use as cathode materials i3l 4V lithium batteries. Although LiCoO$_2$ has been known as the best candidate material for Li-ion batteries, which produces the best performance LiNiO$_2$ is generally accepted as an attractive cathode material, because of its various advantages such as lower cost higher discharge capacity and better reversibility. In this investigation, we calculated the electric state of LiNiO$_2$ using DV-X$\alpha$ molecular orbital method in order to obtain the information of chemical bonding among the Li, Ni and O. In LiNiO$_2$, alternate layers of Li and Ni occupy the octahedral sites of a cubic close packing of oxide ions, making up a rhombohedral structure with an R-3m space group, Li in 3a, Ni in 3b, and O in 6c sites. On the basis of this, we made the cluster model and studied ionization of each atoms and interaction between atoms according to Mullilcen population analysis.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.37 no.2
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• pp.69-76
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• 2000

A dual-modulus prescaler divides the input signal by one of the moduli according to the control signal. In this paper, a new fast dual-modulus prescaler is proposed. The proposed prescaler has a ratioed-NOR structure different from a conventional ratioed-NAND structure. The proposed one can operate at a higher speed by using parallely connected NMOSs instead of using series-connected ones. HSPICE simulation results using HYUNDAI 0.65(m 2-poly 2-metal CMOS process parameters show that the maximum operating frequency of the proposed dual-modulus prescaler is 2.8㎓ with power consumption of 40.7㎽ at 5V supply voltage at $25^{\circ}C$. The proposed dual-modulus prescaler can be utilized for the frequency-synthesis in cellular radio front-ends.

• Bulletin of the Korean Chemical Society
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• v.32 no.12
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• pp.4332-4336
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• 2011

The chalcopyrite-type $CuInSe_2$ is a remarkable material for thin film solar cells owing to its electronic structure and optical response. Single-phase sphere-like $CuInSe_2$ nanocrystallite particles were prepared by a facile noninjection method with triethanolamine as the complexing agent and the solvent simultaneously. The period of the reaction was the key to form single-phase $CuInSe_2$ nanocrystals at $240^{\circ}C$. TEM, XRD, XPS, EDX investigations were performed to characterize the morphology and the detailed structure of as-synthesized $CuInSe_2$ nanocrystals. All of the analysis results proved that the synthesized nanocrystals were pure phase and close to the stoichiometric ratio rather than a simple mixture. The band gap of the obtained $CuInSe_2$ nanocrystals was $1.03{\pm}0.03$ eV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.13-17
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• 2004

The PZT thin films are well-known material that has been widely studied for ferroelectric random access memory (FRAM). We etched the PZT thin films by $CF_4/(Cl_2+Ar)$ plasma and investigated improvement in etching damage by $O_2$ annealing. PZT thin films were etched for 1 min in an ICP using a gas mixture of $Cl_2$(80%)/Ar (20%) with 30% $CF_4$ addition. The etching conditions were fixed at a substrate temperature of $30^{\circ}C$, an rf power of 700 W, a dc-bias voltage of -200 V and a chamber pressure of 2 Pa. To improve the ferroelectric properties of PZT thin films after etching, the samples were annealed for 10 min at various temperatures in $O_2$ atmosphere. After $O_2$ annealing, the remanent polarization, fatigue, and the leakage current were gradually recovered to the characteristics of the as-deposited film, according as the temperature increased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.63-66
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• 2002

Bi-layer Mo films were deposited on sodalime glass substrates using DC magnetron sputtering. As the gas pressure and power density, the resistivity varied from $1.5{\times}10^{-5}$ to $4.97{\times}10^{-4}{\Omega}{\cdot}cm$. Furthermore, stress direction yielded compressive-to-tensile transition stress curves. The microstructure of the compressive stress films which had poor adhesion consists of tightly packed columns, but of the tensile-stressed films had less dense structure. Under all gas pressure conditions, Mo films exhibited distinctly increasing optical reflection with decreasing gas pressure. The expansion of (110) peak width with the gas pressure meant the worse crystalline growth. Also, The highest efficiency was 15.2% on 0.2 $cm^2$. The fill factor, open circuit voltage and short circuit current were 63 %, 570 m V and 42.6 $mA/cm^2$ respectively.