• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.431-431
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• 2007

In this paper, the LC alignment characteristics of the NDLC thin film deposited by PECVD and sputtering were reported respectively. The NDLC thin film deposited using sputter showed uniform LC alignment at the 1200 eV of the ion beam intensity and pretilt angle was about $2^{\circ}$ while the NDLC thin film deposited using the PECVD showed uniform LC alignment and high pretilt angle at the 1800 eV of the ion beam intensity. Concerning the ion beam intensity, uniform LC alignment of the NDLC thin film deposited by the sputtering was achieved at the lower intensity. And the pretilt angle of the NDLC thin film deposited by sputter was higher than those of NDLC thin film that was deposited using the PECVD. The uppermost of the thermal stability of NDLC thin film was $200^{\circ}C$, respectively. However, NDLC thin film deposited by the PECVD showed stability at high temperature without defects, compared to NDLC thin film deposited by the sputter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.218-221
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• 2000

Currently, Bi-2223 HTS tape is capable of being fabricated in longer than 100m length by industrial processes. But there are some problems in heat treatment of the degree of longer than 100m tape, which is in term of volume occupied with specimen in furnace. The effects of ceramic coating with variable slurry states were studied in Bi-2223 high-temperature superconductor. The HTS tapes coated with oxide were prepared by using dip-coating method on slurry state. Critical current(I$_{c}$) of tapes coated with ceramic materials were equal with 11.5A at 77K after first heat treatment as different slurries. For final heat treatment, Critical current of HTS tapes coated with zirconia oxide mixed in PMMA and PVA organic solute were 20.8A at 77K. The breakdown voltage of HTS tapes coated with zirconia oxide were 3kV in air and 4~7kV in L$N_2$.>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.435-438
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• 2003

The effects of oxygen partial pressure and vacuum annealing on the electrical properties of sputtered vanadium oxide($VO_x$) thin films were investigated. The thin films were prepared by r.f. magnetron sputtering from $V_2O_5$ target in a gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio of 0% and 8% is adopted. Electrical properties of films sputter-deposited under different oxygen gas pressures and in situ annealed in vacuum at $400^{\circ}C$ for 1h and 4h are characterized through electrical conductivity measurements. I-V characteristics were distinguished between linear and nonlinear region. In the low field region the conduction is due to Schottky emission, while at high fields it changes to Fowler-Nordheim tunneling type conduction. The conductivity measurements have shown an Arrhenius dependence of the conductivity on the temperature.

• Vacuum Magazine
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• v.3 no.3
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• pp.15-18
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• 2016

In future wearable electronic systems, 3-dimensional (3D) devices have attracted much attention due to their high density integration and low-power functionality. Among 3D devices, gate-all-around (GAA) nanowire transistor provides superior gate controllability, resulting in suppressing short channel effect and other drawbacks in 2D metal-oxide-semiconductor field-effect transistor (MOSFET). Silicon nanowires (SiNWs) are the most promising building block for GAA structure device due to their compatibility with the current Si-based ultra large scale integration (ULSI) technology. Moreover, the theoretical limit for subthreshold swing (SS) of MOSFET is 60 mV/dec at room temperature, which causes the increase in Ioff current. To overcome theoretical limit for the SS, it is crucial that research into new types of device concepts should be performed. In our present studies, we have experimentally demonstrated feedback FET (FBFET) and tunnel FET (TFET) with sub-60 mV/dec based on SiNWs. Also, we fabricated SiNW based complementary TFET (c-TFET) and SiNW complementary metal-oxide-semiconductor (CMOS) inverter. Our research demonstrates the promising potential of SiNW electronic devices for future wearable electronic systems.

• Journal of the Semiconductor & Display Technology
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• v.8 no.3
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• pp.1-5
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• 2009

In this study, we have shown the power conversion efficiency of organic thin film photovoltaic devices utilizing a conjugated polymer/fullerene bulk-hetero junction structure. We use MDMO-PPV(Poly[2-methoxy-5-(3,7-dimethyloctyloxy -1,4-phenylenevinylene) as an electron donor, PCBM([6,6]-Phenyl C61 butyric acid methyl ester) as an electron accepter, and PEDOT:PSS used as a HTL(Hole Transport Layer). We have fabricated OPV(Organic Photovoltaic) devices as a function of the MDMO-PPV/PCBM concentration from 1:1 to 1:5. The electrical characteristics of the fabricated devices were investigated by means of I-V, P-V, F·F(Fill Factor) and PCE(power conversion efficiency). The power conversion efficiency was gradually increased until 1:4 ratio, also the highest efficiency of 0.4996% was obtained at the ratio.

• Biodesign
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• v.6 no.4
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• pp.96-99
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• 2018

The gram-positive bacterium Staphylococcus aureus is a common cause of abscesses, sinusitis and food poisoning. The emergence of antibiotic-resistant strains has caused significant clinical issues worldwide. The HslU-HslV complex was first identified as a prokaryotic homolog of eukaryotic proteasomes. HslU is an unfoldase that mediates the unfolding of the substrate proteins, and it works with the protease HslV in the complex. To date, the protein complex has been mostly studied in gram-negative bacteria. In this study, we report the purification and crystallization of the full-length HslU from S. aureus. The crystal diffracted X-rays to a $3.5{\AA}$ resolution, revealing that the crystals belong to space group $P2_1$, with unit cell parameters of a = 166.5, b = 189.6, $c=226.6{\AA}$, and ${\beta}=108.1^{\circ}$. We solved the phage problem by molecular replacement using the structure of HslU from Haemophilus influenzae as a search model. The cell content analysis with this molecular replacement solution revealed that 24 molecules are contained in the asymmetric unit. This structure provides insight into the structural and mechanistic difference of the HslUV complex of gram-positive bacteria.

• Journal of Fashion Business
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• v.23 no.4
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• pp.100-111
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• 2019

In this study, the dyeing properties and functionalities of Crataegi fructus extract were investigated for the purpose of application to new natural dye resources. The effects of dyeing conditions(concentration of dye, dye bath temperature, dyeing duration and dye bath pH) and mordanting on dye uptake and color changes were also examined. The study also estimated the colorfastness, antibacterial properties, and ultraviolet protection properties of the dyed and mordanted silk fabrics. The dye uptake increased in tandem with the dye concentration and dye bath temperature. The highest K/S values were obtained at the following conditions: a dye concentration of 100%(v/v), a dyeing period of 60 minutes, a dye bath temperature of $90^{\circ}C$, and a dyeing pH of 3. The colorfastness of the material when dry cleaned or rubbed ranged from good to excellent and fastness to light was rated at grade 2-3. The change in the color grade when exposed to washing was not good; however, the stain of washing fastness was good at a range of 4-5. In regards to the functional property aspects, the dyed and mordanted fabrics exhibited excellent results with a 99.9% reduction rate, and excellent ultraviolet protection factors.

• Journal of Forest and Environmental Science
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• v.34 no.6
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• pp.472-480
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• 2018

This study was conducted to estimate carbon storage in Quercus mongolica stands based on stand age class, and to provide basic data on the carbon balance of broad-leaved forests of Korea. The research was conducted at the experimental forest of Kangwon National University, Hongcheon-gun County, Gangwon-do Province, Korea. Three plots were set up in each of three Q. mongolica forest stands (III, V, and VII) to estimate the amount of carbon stored in Q. mongolica aboveground vegetation, coarse woody debris (CWD), organic layer, mineral soil, and litterfall. The carbon storage of the aboveground vegetation increased with an increase in stand age, while the carbon storage ratio of stems decreased. The carbon storage of the organic layer, CWD, and litterfall did not show any significant differences among age classes. In addition, the carbon concentration and storage in the forest soils decreased with depth, and there were no differences among age classes for any soil horizon. Finally, the total carbon storage in the III, V, and VII stands of Q. mongolica were 132.2, 241.1, and $374.4Mg\;C\;ha^{-1}$, respectively. In order to predict and effectively manage forest carbon dynamics in Korea, further study on deciduous forests with other tree species in different regions will be needed.

• Plant Breeding and Biotechnology
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• v.5 no.4
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• pp.363-370
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• 2017

In this study, Quercus acutissima seedlings were subjected to drought for 30 days then analyzed to determine their response to water deficit. The growth phenotype, chlorophyll fluorescence response, fresh weight, dry weight, photosynthetic pigment levels, soluble sugar content, and malondialdehyde (MDA) were measured to evaluate the effects of drought on plant growth and physiology. The growth phenotype was observed by infrared (IR) digital thermal imaging after 30 days of drought treatment. The maximum, average, and minimum temperatures of drought-treated plant leaves were $1-2^{\circ}C$ higher than those of the control. In contrast, the fresh and dry weights of the dehydrated leaves were generally lower than those of the control. There were no significant differences between treatments in terms of chlorophyll a, chlorophyll b, total chlorophyll, and carotenoid levels. Nevertheless, for the drought treatment, the $F_v/F_m$ and $F_v/F_o$ ratios (chlorophyll fluorescence response) were lower than those for the control. Therefore, photosynthetic activity was lower in the dehydrated plants than the control. The drought-stressed Q. acutissima S0536 had lower soluble sugar (glucose and fructose) and higher MDA levels than the controls. These findings may explain the early growth and physiological responses of Q. acutissima to dehydration and facilitate the selection of drought-resistant tree families.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.259-259
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• 2011

염료감응형 태양전지(Dye-Sensitized Solar Cells:DSSC)는 환경 친화적이며, 저가의 공정에 대한 가능성으로 기존의 고가의 결정질 실리콘 태양전지의 경제적인 대안으로 각광을 받고 있다. 최근 염료감응형 태양전지는 투명 전도성 산화막(Transparent Conducting Oxide : TCO)으로 사용되는 Fluorine Tin Oxide (FTO)가 증착된 유리기판 위에 주로 제작된다. FTO는 낮은 비저항과 가시광선 영역에서 높은 투과도를 가지는 우수한 전기-광학적 특성을 갖지만, 비교적 공정이 까다로운 Chemical Vapor Deposition (CVD)법으로 제조하며, 전체 공정비용의 60%를 차지하는 높은 생산단가로 인해 현재 FTO를 대체할 재료개발 연구가 활발히 진행되고 있다. 그 중 ZnO (Zinc Oxide)는 우수한 전기-광학적 특성과 비교적 저렴한 가격으로 새로운 TCO로써 주목받고 있다. ZnO는 넓은 energy band gap (3.4 [eV])의 육방정계 울자이트(hexagonal wurtzite) 결정 구조를 가지는II-VI족 n형 반도체 물질이며, III족 금속원소인 Al, Ga 및 In 등의 불순물을 첨가하면 TCO로서 우수한 전기-광학적 특성과 안정성을 나타낸다. 이들 물질중 $Zn^{2+}$ (0.060 nm)의 이온반경과 유사한 $Ga^{2+}$0.062 nm) 이온이 ZnO의 격자반경을 최소화 시킬 수 있다는 장점으로 최근 주목 받고 있다. 하지만 Ga-doped ZnO (GZO)의 경우 DSC에 사용되는 루테늄 계열의 산성 염료 하에 장시간 두면 표면이 파괴되는 문제가 발생하며, $TiO_2$ paste를 Printing 후 열처리하는 과정에서도 박막의 파괴가 발생할 수 있다. 이를 방지하기 위해 $TiO_2$ Blocking Layer를 GZO 투명전극 위에 증착하였다. 또한, $TiO_2$ Blocking Layer를 적용한 GZO 박막을 전면전극으로 이용하여 DSC를 제작하여 효율을 확인하였다. 2wt%의 $Ga_2O_3$가 도핑된 ZnO 박막은 20mTorr 400$^{\circ}C$에서 Pulsed Laser Deposition (PLD)에 의해 성장되었고, $TiO_2$박막은 Ti 금속을 타겟으로 이용하여 30mTorr 400$^{\circ}C$에서 증착되었다. Scanning electron microscopy (FE-SEM)을 이용한 박막 분석 결과 $TiO_2$가 증착된 GZO 박막의 경우 표면 파괴가 일어나지 않았다. Solar Simulator을 이용하여 I-V특성 측정결과 상용 FTO를 사용한 DSC 수준의 효율을 나타내었다. 이에 따라 Pulsed Laser Deposition을 이용해 제작된 GZO 기판은 $TiO_2$ Blocking Layer를 이용하여 표면 파괴를 방지할 수 있었으며, 이는 향후 염료감응형 태양전지의 투명전극에 적용 가능 할 것으로 판단된다.