• Archives of Pharmacal Research
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• v.11 no.2
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• pp.87-92
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• 1988

A number of substituted furodiketochroman derivatives ($lll_{a-f}$) have been synthesized by fusion of aromatic aldehydes with 5-hydroxybergapten and 5-hydroxyisopimpinellin. On the other hand, when the reaction was carried out in a solvent, the corresponding bis-furoccumarin derivatives ($lV_{c-n}$) were obtained. The anticoagulant effect of compounds $lll_{a,b,d}$ and $lv_{b,c,f,g,i,k}$ was tested. They failed to demonstrate any significant effect. The effect of the tested compounds on the arterial blood pressure was studied. Compounds $lV_c$, $lll_d$, $lll_b$, $lV_b$, $lV_k$ and $lV_i$ showed lowering effects on the normal systolic blooc pressure of anaesthetized rats in a decreasing manner.

• Korean Journal of Materials Research
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• v.5 no.7
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• pp.802-807
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• 1995

The electrochromic properties of vacuum deposited V$_2$O$_{5}$ thin films as a function of crystallinity and film thickness have been systematically investigated. The as-deposited films have slightly yellow appearance. V$_2$O$_{5}$ films deposited at higher substrate temperature(>14$0^{\circ}C$) are found to be crystalline while those deposited at low substrate temperature are amorphous. The optical modulation on lithium ion injection indicates that V$_2$O$_{5}$ films exhibit anodic coloration in the 300~500 nm wavelength range and cathodic coloration in the 500~1100nm wavelength range independent of crystallinity and film thickness. The optical band gap energy of crystalline and amorphous Li$_{x}$ VV$_2$O$_{5}$ films shifts to higher energies by 0.17 eV and 0.75 eV, respectively, with increasing lithium ion injection up to x=0.6. The coloration efficiency of amorphous Li$_{x}$ V$_2$O$_{5}$ exhibits very little dependence on film thickness and lithium ion injection amounts in the near-infrared while it increases significantly with increasing film thickness and decreasing lithium ion injection amounts in the blue and near-UV due to the shift in absorption edge below around 500nm. However, the coloration efficiency of crystalline Li$_{x}$ V$_2$O$_{5}$is relatively independent of film thickness and lithium ion injection in the 300~1100 nm wavelength range.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.11
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• pp.63-70
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• 1999

A PLT(10) thin film has been deposited on $Pt/TiO_2/SiO_2/Si$ substrate by sol-gel method, and its switching characteristics have been investigated with various top electrode areas, input pulse voltages and loan resistances. As the external input pulse voltage increases from 2V to 5V, the switching time decreases from $0.49{\mu}s$ to $0.12{\mu}s$. The activation energy ($E_a$) obtained from the relations between the switching time and the applied pulse voltage is evaluated as 209kV/cm. The switched charge densities at 5V obtained from the hysteresis loop and the polarization switching are $11.69{\mu}C/cm^2$ and $13.02{\mu}C/cm^2$, respectively, which agree relatively well with each other and show the difference of 10%. When the top electrode area increases from TEX>$3.14{\times}10^{-4}cm^2$ to $5.03{\times}10^{-3}cm^2$ and the load resistance increases from 50${\Omega}$ to 3.3$k{\Omega}$, the switching time increases from $0.12{\mu}s$ to $1.88{\mu}s$ and from $0.12{\mu}s$ to $9.7{\mu}s$, respectively. These switching characteristics indicate that PLT(10) thin film can be well applied in nonvolatile memory devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.157-159
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• 2000

Vanadate glass in the $Li_2O-P_2O_5-V_2O_5$ system with 60mol% $V_2O_5$ was prepared by melting the bath in pt. crucible followed by quenching on the copper plate. We found that $Li_2O-P_2O_5-V_2O_5$ glass ceramics obtained from nucleation of $Li_2O-P_2O_5-V_2O_5$ glass showed significantly higher capacity and longer cycle life than conventionally made crystalline $LiV_3O_8$. In the present paper, We describe the charge/discharge properties during crystallization process and find the best crystallization condition of $Li_2O-P_2O_5-V_2O_5$ glass as cathode material. The Charge and discharge capacity of $Li_2O-P_2O_5-V_2O_5$ glass was about 220mAh/g for the cell heat-treated at $250^{\circ}C$ for 2.5hr.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.16 no.28
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• pp.137-143
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• 1993

Generally there are three methods to derive an approximation formula: 1) approching standard normal distribution by appropriate changing variable 2) using standardization variable for expansion 3) deriving approximation formula by direct method. This paper present correction terms having the form of $C_{1/v^{n/2}}/{\;}+{\;}C_2{\;}(n=1,2)$ with respect to $x^2_{\alpha}(v)$ distribution (${\nu}{\;}{\leq}{\;}30$), which minimize the error by EDA method and least square method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.6
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• pp.445-454
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• 2001

The stochiometric mix of evaporating materials for the CuInSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuInSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 62$0^{\circ}C$ and 41$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CuInSe$_2$ single crystal thin films measured from Hall effect fby van der Pauw method are 9.62x10$^{16}$ cm$^{-3}$ , 296$\textrm{cm}^2$/V.s at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film we have found that he values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 6.1 meV and 175.2 meV at 10K, respectively. From the photoluminescence measurement on CuInSe$_2$ single crystal thin film we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excition were 7meV and 5.9meV, respectivity. by Haynes rule, an activation energy of impurity was 50 meV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.163-166
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• 2001

The stochiometric mix of evaporating materials for the $ZnGa_{2}Se_{4}$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $ZnGa_{2}Se_{4}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnGa_{2}Se_{4}$ single crystal trun films measured from Hall effect by van der Pauw method are $9.63{\times}10^{17}cm^{-3}$, $296cm^{2}/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c axis of the $ZnGa_{2}Se_{4}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$ So and the crystal field splitting $\Delta$Cr were 251.9 meV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on $ZnGa_{2}Se_{4}$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton $(A^{0},X)$ having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.83-83
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• 2003

The stochiometric mix of evaporating materials for the CuInSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuInSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 62$0^{\circ}C$ and 41$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CuInSe$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.62$\times$10$^{16}$ cm$^{-3}$ , 296 $\textrm{cm}^2$/V.s at 293 K, respectively From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 6.1 meV and 175.2 meV at 10 K, respectively. From the photoluminescence measurement on CuInSe$_2$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 7 meV and 5.9 meV, respectivity. By Haynes rule, an activation energy of impurity was 59 meV.

• Journal of Korea Society of Industrial Information Systems
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• v.12 no.2
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• pp.79-84
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• 2007

This papar reports design and fabrication of CMOS temperature control circuit using MOSIS 0.25um-3.3V CMOS technology. The proposed circuit has a temperature coefficient of $13mV/^{\circ}C$ for a wide operating temperature range with a good linearity. Furthermore, the temperature coefficient of output voltage can be controlled by adjusting external bias voltage. This circuit my be applicable to the design of one-chip IC where quartz crystal resonator is mounted on CMOS oscillator chips.

• Microbiology and Biotechnology Letters
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• v.23 no.5
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• pp.617-623
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• 1995

A new thermotolerant yeast strain was siolated, and its characteristics have been studied. The strain was identified and named Saccharomyces cerevisiae F38-1. This strain could grow not only at high temperature, but also in high concentrations of sugar and ethanol. S. cerevisiae F38-1 could grow in a medium containing 50% glucose. The isolate produced ethanol at 43$\circ$C, but didn't grow at 40$\circ$C in the presence of 8% ethanol. Fermentation studies showed that the isolate ferments 20% glucose to 9.8% (V/V) ethanol at 40$\circ$C in the presence of 0.2%, yeast extract.