• Title/Summary/Keyword: V2C

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Effects of CO and $CO_2$ on Hydrogen Permeation through Pd-coated V-Ti-Ni Alloy Membranes (Pd 코팅된 V-Ti-Ni 합금 분리막을 통한 수소투과에서 CO와 $CO_2$의 영향)

  • Jeon, Sung-Il;Park, Jung-Hoon;Lee, Yong-Taek
    • Membrane Journal
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    • v.21 no.3
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    • pp.290-298
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    • 2011
  • The influence of co-existing gases on the hydrogen permeation was studied through a Pd-coated $V_{53}Ti_{26}Ni_{21}$ alloy membrane. The hydrogen permeation characteristics of Pd-coated $V_{53}Ti_{26}Ni_{21}$ alloy membrane have been investigated in the pressure range 1-3 bar under pure hydrogen and hydrogen mixture gas with carbon dioxide and carbon monoxide at $450^{\circ}C$. Preliminary hydrogen permeation experiments have been confirmed that hydrogen flux was $5.36mL/min/cm^2$ for a Pd-coated $V_{53}Ti_{26}Ni_{21}$ alloy membrane (thick: 0.5 mm) using pure hydrogen as the feed gas. In addition, hydrogen fluxes were 4.46, 5.20, $3.91mL /min/cm^2$ for$V_{53}Ti_{26}Ni_{21}$ alloy membrane using $H_2/CO_2$, $H_2/CO$ and $H_2/CO_2/CO$ as the feed gas respectively. Therefore, the hydrogen permeation flux decreased with decrease of hydrogen partial pressure irrespective of temperature and pressure when $H_2/CO_2$, $H_2/CO$ and $H_2/CO_2/CO$ mixture applied as feed gas respectively and permeation fluxes were satisfied with Sievert's law in different feed conditions. It was found from XRD results after permeation test that the Pd-coated $V_{53}Ti_{26}Ni_{21}$ alloy membrane had good stability and durability for various mixtures feeding condition.

A New CMOS Voltage-Controlled Oscillator (새로운 CMOS 전압-제어 발진기)

  • Chung, Won-Sup;Kim, Hong-Bae;Lim, In-Gi;Kwack, Kae-Dal
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.25 no.11
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    • pp.1274-1281
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    • 1988
  • A new voltage-controlled oscillator based on a voltage-controlled integrator has been developed. It consists of a Schmitt-trigger and a voltage-controlled integrator, which is realized by an operational transconductance amplifier (OTA) and a grounded capacitor. The input control voltage changes the time constant of the integrator, and hence the oscillation frequency. The SPICE simulation shows that a prototype circuit, which oscillates at 12.21 KHz at 0 V, has the conversion sencitivity 2,437 Hz/V and the residual nonlinearity less than 0.68% in a control voltage range from -2 V to 2 V. It also shows that the circuit provides a temperature drift less than + 250 ppm/$^{\circ}$C for frequencies up to 100 KHz.

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Ag and Cu Precipitation in Multi-Layer Chip Inductors Prepared with V2O5 Doped NiCuZn Ferrites (V2O5 도핑된 NiCuZn 페라이트로 제조된 칩인덕터에서의 Ag/cu 석출)

  • Je, Hae-June;Kim, Byung-Kook
    • Korean Journal of Materials Research
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    • v.13 no.8
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    • pp.503-508
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    • 2003
  • The purpose of this study is to investigate the effect of $V_2$$O_{5}$ addition on the Ag and Cu precipitation in the NiCuZn ferrite layers of 7.7${\times}$4.5${\times}$1.0 mm sized multi-layer chip inductors prepared by the screen printing method using 0∼0.5 wt% $V_2$$O_{5}$ -doped ferrite pastes. With increasing the $V_2$$O_{5}$ content and sintering temperature, Ag and Cu oxide coprecipitated more and more at the polished surface of ferrite layers during re-annealing at $840^{\circ}C$. It was thought that during the sintering process, V dissolved in the NiCuZn ferrite lattice and the Ag-Cu liquid phase of low melting point was formed in the ferrite layers due to the Cu segregation from the ferrite lattice and Ag diffusion from the internal electrode. During re-annealing at $840^{\circ}C$, the Ag-Cu liquid phase came out the polished surface of ferrite layers, and was decomposed into the isolated Ag particles and the Cu oxide phase during the cooling process.

Studies on Thermal Oxidation of Soybean Oil -I. Changes in Some Chemical and Physical Properties of a Soybean Oil during Thermal Oxidation- (대두유의 가열산화중의 특성변화 -제 1 보 : 가열산화중의 대두유의 일부 화학적, 물리적 성질의 변화-)

  • Shin, Ae-Ja;Kim, Dong-Hoon
    • Korean Journal of Food Science and Technology
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    • v.14 no.3
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    • pp.257-264
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    • 1982
  • In the present stud changes of some chemical and physical properties of a soybean oil, aerated at 120 ml/min through a porous gas distributor and oxidized at $45^{\circ}C{\sim}180^{\circ}C$, was investigated. The results of the study were as follows: The peroxide, thiobarbituric acid, and iodine value of the soybean oil which was aerated at 120 ml/min increased rapidly as oxidation temperature exceeded over $80^{\circ}C$. The acid value of the oil increased very rapidly as the oxidation temperature passed over $160^{\circ}C$. The content of the unsaturated fatty acid of the oil decreased considerably as the oxidation temperature exceeded over $80^{\circ}C$, whereas that of the saturated fatty acid did not change appreciably. This related well to the changes of the iodine value of the oil subjected to the same experimental conditions. The viscosity and refractive index of the oil increased rapidly as the oxidation temperature passed over $180^{\circ}C$. The following linear relationship hold for the viscosity and refractive index of the oil in the present study. $$V=Aexp({\frac{E}{RT}})$$ where V=viscosity(poise), A=constant, E=activation energy for viscous flow, R=gas constant, T=oxidation temperature$(^{\circ}K)$. The following relationship also hold for the viscosity and refractive index$({n^{20}}_D)$ of the oil at the present experimental conditions. $${n^{20}}_D=1.4614+7.333{\times}10^{-5}t+2.9612{\times}10^{-3}\;InV$$ where t=temperature$(^{\circ}C)$ at which the viscosity was measured.

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Site-Directed Mutagenesis of Two Cysteines (155, 202) in Catechol 1,2-dioxygenase $I_1$ of Acinetobacter lwoffii K24

  • Kim, Seung-Il;Kim, Soo-Jung;Leem, Sun-Hee;Oh, Kye-Heon;Kim, Soo-Hyun;Park, Young-Mok
    • BMB Reports
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    • v.34 no.2
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    • pp.172-175
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    • 2001
  • Catechol 1,2-dioxygenase $I_1$ ($CDI_1$) is the first enzyme of the $\beta$-ketoadipate pathway in Acinetobacter lowffii K24. $CDI_1$ has two cysteines (155, 202) and its enzyme activity is inhibited by the cysteine inhibitor, $AgNO_3$. Two mutants, $CDI_1$ C155V and $CDI_1$ C202V, were obtained by site-directed mutagenesis. The two mutants were overexpressed and the mutated amino acid residues (Cys$\rightarrow$Val) were characterized by peptide mapping and amino acid sequencing. Interestingly, $CDI_1$ C155V was inhibited by $AgNO_3$, whereas $CDI_1$ C202V was not inhibited. This suggests that $Cys^{202}$ is the sole inhibition site by $AgNO_3$ and is close to the active site of the enzyme. However, the results of the biochemical assay of mutated $CDI_1s$ suggest that the two cysteines are not directly involved in the activity of the catechol 1,2-dioxygenase of $CDI_1$.

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Activation and Hydrogen Sorption Characteristics of a Ti0.3Zr0.2V0.5 Alloy Getter (Ti0.3Zr0.2V0.5 합금게터의 활성화 및 수소흡수특성)

  • Kim Wonbaek;Lee Dongjin;Park Jeshin;Suh Changyul;Lee Jaechun
    • Korean Journal of Materials Research
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    • v.15 no.2
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    • pp.79-84
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    • 2005
  • The lowest activation temperature of a commercial vacuum getter reported so far in literature was about $400^{\circ}C$. Recently, $Ti_{0.3}Zr_{0.2}V_{0.5}$ alloy has been reported to exhibit the activation temperature lower than $200^{\circ}C$ when they are prepared as thin film. In this study, the alloy was prepared as bulk form and its activation temperature and hydrogen sorption properties were investigated in compliance with a standard method. The alloy powder was prepared by arc melting and subsequent HDH(Hydride-DeHydride) process. The activation temperature of the alloy was estimated from the ultimate pressure-temperature curve and located between $150^{\circ}C\;and\;200^{\circ}C$. The hydrogen sorption speed measured by an orifice method was 0.895 liter/sec which is comparable to thin film of same composition.

Fabrication of $Cu_2/CdS$ solar cell and its characteristics ($Cu_2/CdS$ 태양전지 제작 및 그 특성연구)

  • 유평렬;김현숙;이재윤;강창훈;박은옥;정태수;김택성;양동익;신영진
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.7 no.2
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    • pp.315-323
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    • 1997
  • The sing1e crystal of cadmium sulfide was grown by vertical sublimation method. The lattice constants of CdS single crystal by extrapolation method are $a_0=4.139\AA$ and $c_0=6.719\AA$, respectively. The $Cu_2$S/CdS solar cell was fabricated using the single crystal of cadmium sulfide and the CuCl solution. The light- to- dark JV cross over effect of the $Cu_2$S/CdS solar cell was measured after annealing for 2 minutes at $250^{\circ}C$ in air atmosphere. The values of Voc, Jsc, Vop, FF, and efficiency are 0.40 volt, $4.2mA/\textrm{cm}^2$, 0.31 volt, $3.8mA/\textrm{cm}^2$, 0.68 and 3.8 %, respectively. The spectral response of the solar cell shows the peaks at 498 nm (2.49 eV) and 585 nm (2.12 eV).

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Characteristics of Lead Anodic Films Formed in Aqueous Solutions and Reactivities of Di-iso-butylnitrosoamine in Sea Water (납 산화피막 전극의 특성과 디이소부틸니트로소아민의 전극반응성)

  • Hwang Kum-Sho
    • Korean Journal of Fisheries and Aquatic Sciences
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    • v.14 no.2
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    • pp.103-115
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    • 1981
  • The cathodic reactions of lead anodic films formed in phosphoric acid, oxalic acid and sodium hydroxide solutions and the reactivities of Di-iso-butylnitrosoamine (DBNA) in sea water at $15\sim30^{\circ}C$ were studied by means of constant current-potential method. Besides, various contants and thermodynamic quantities obtained in the experiment were also do-scribed to explain the reactivities of protons that entered in the anodic film by being transferred across the metal-oxide interface. The electrode reactions of lead anodic film formed in sodium hydroxide solution in 60mM DBNA+0.5M NaCl did not occur because of complete insulator formed on anodic film. The values of $(\partial\triangle E_{H^+}/\partial T)_{i=const}$, estimated with Bead anodic films formed in phosphoric acid in 60mM DBNA+0.5M NaCl and 60mM $DBNA+6\%_{\circ}$ sea water were $-0.006\;V/^{\circ}C\;and\;-0.005\;V/^{\circ}C$, thus being nearly coincided, but the values of $(\partial E_o/\partial T)_{i=o}$ were $0.002\;V/^{\circ}C\;and\;-0.002\;V/^{\circ}C$, being completely inversed.

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Ionic Dependence and Modulatory Factors of the Background Current Activated by Isoprenaline in Rabbit Ventricular Cells

  • Leem, Chae-Hun;Lee, Suk-Ho;So, In-Suk;Ho, Won-Kyung;Earm, Yung-E
    • The Korean Journal of Physiology
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    • v.26 no.1
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    • pp.15-25
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    • 1992
  • In order to elucidate the properties of the background current whole cell patch clamp studies were performed in rabbit ventricular cells. Ramp pulses of ${\pm}80\;mV$ from holding potential of 40 mV(or 20 mV) at the speed of 0.8 V/sec were given every 30 sec(or 10 sec) and current-voltage diagrams(I-V curve) were obtained. For the activation of the background current isoprenaline, adenosine 3',5'-cyclic monophosphate(dBcAMP), guanosine 3',5'-cyclic monophosphate(cGMP), and $N^6$-2'-o-dibutyryladenosine 3',5'-cyclic monophosphate(dBcAMP) were applied after all known current systems were blocked with 2mM Ba, 1 mM Cd ,5 mM Ni, 10 ${\mu}M$ diltiazem, 10 ${\mu}m$ ouabain, and 20 mM tetraethylammonium(TEA). The conductance of background current in control was $0.65{\pm}0.69$ nS at 0 mV, its I-V curves was almost linear and reversed near 50 mV. When there was no taurine in pipette solution, isoprenaline hardly activated the background current but when taurine existed in pipette solution, isoprenaline activated the larger background current. Cyclic AMP or cyclic GMP alone had little effect on the activation of the background current, while cGMP potentiated cGMP effect. When the background current was activated with cGMP and cAMP, isoprenaline could not further increased the background current. The background current activated by isoprenaline depended on extracellular $Cl^-$ concentration and its reversal potential was shifted according to chloride equilibrium potential. The change of extracellular $Na+$ concentration had little effect on reversal potential of the background current activated by isoprenaline.

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The Impact of N-Ion Implantation on Deep-Level Defects and Carrier Lifetime in 4H-SiC SBDs (N-이온주입이 4H-SiC SBDs의 깊은 준위 결함 및 소수 캐리어 수명에 미치는 영향)

  • Myeong-cheol Shin;Geon-Hee Lee;Ye-Hwan Kang;Jong-Min Oh;Weon Ho Shin;San-Mo Koo
    • Journal of IKEEE
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    • v.27 no.4
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    • pp.556-560
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    • 2023
  • In this study, the impact of Nitrogen implantation process on deep-level defects and lifetime in 4H-SiC Epi surfaces was comparatively analyzed. Deep Level Transient Spectroscopy (DLTS) and Time Resolved Photoluminescence (TR-PL) were employed to measure deep-level defects and carrier lifetime. As-grown Schottky Barrier Diodes (SBDs) exhibited energy levels at 0.16 eV, 0.67 eV, and 1.54 eV, while for implantation SBD, defects at 0.15 eV were observed. This indicates a reduction in defects associated with energy levels Z1/2 and EH6/7, known as lifetime killers, as impurities from nitrogen implantation replace titanium and carbon vacancies.