• Bulletin of the Korean Mathematical Society
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• v.34 no.4
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• pp.637-643
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• 1997

The group $V(ZS_3)$ of units of augmentation 1 in the integral group ring $ZS_3$ is characterized as the free product of $C_2$ and $S_3$, where $C_2$ is the cyclic group of order 2.

• The Korean Journal of Food And Nutrition
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• v.27 no.3
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• pp.532-537
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• 2014

Cortex Phellodendri (CP) is derived from the dried bark of Phellodendron amurense. It has been widely used as a drug in traditional Korea medicine for treating diarrhea, jaundice, swelling pains in the knees and feet, urinary tract infections, and infections of the body surface. Many analytical methods have been used to study oriental herbal medicines, such as thin-layer chromatography, column liquid chromatography, and high performance liquid chromatography (HPLC). In this study, preparative centrifugal partition chromatography (CPC) was successfully carried out in order to separate pure compounds from a CP methanol extract. The optimum two-phase CPC solvent system was composed of n-butanol: acetic acid: water (4:1:5 v/v/v). The flow rate of the mobile phase was 3 mL/min in ascending mode with rotation at 1,000 rpm. The CPC-separated fraction and purification procedures were carried out by preparatory HPLC. The $^1H$ NMR spectrum revealed that the resonances at ${\delta}$ 4.10 and 4.20 ppm corresponded to three protons ($-OCH_3$), whereas those at ${\delta}$ 6.10 ppm corresponded to two protons ($-OCH_2O-$). Further, two aromatic protons (H-11 and H-12) conveys a doublet-doublet pattern. The H-11 doublet and H-12 doublet appear at ${\delta}$ 7.98 and 8.11, respectively. The $^{13}C$ NMR. spectrum showed a tetrasubstituted with a methylenedioxy group at C2 and C3, and two methoxy groups at C9 and C10. The chemical structure of the berberine was identified by $^1H$, $^{13}C$-nuclear magnetic resonance and electrospray ionization-mass spectroscopy spectral data analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.237-242
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• 2001

The stochiometric mix of evaporating materials for the CuGaSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuGaSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 610$^{\circ}C$ and 450$^{\circ}C$, respectively The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuGaSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting Δ So and the crystal field splitting ΔCr were 91 meV and 249.8 meV at 20 K, respectively. From the Photoluminescence measurement on CuGaSe$_2$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy 7f neutral acceptor bound excision were 8 meV and 35.2 meV, respectivity. By Haynes rule, an activation energy of impurity was 355.2 meV

• The Journal of Korean Institute of Communications and Information Sciences
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• v.8 no.1
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• pp.12-16
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• 1983

This paper is dealing a $V_3O_5-P_2O_5$ metal oxide glass semiconductor. This semiconductor is easy to fabricate in the atmospheric condition at relatively low temperature. The element is made like a bead, and platinum segments are used as electrodes. Other kind of metal withstanding high temperature near 1000C can also be used as electrode. Experiment verifies that the fabricated element has the resistance in the order of about ~$10^5\;\Omega$, and shows negative resistance characteristics and switching characteristics with respect to temperature. An equivalent circuit of the element is proposed based on its electrical characteristcs.

• Journal of Advanced Marine Engineering and Technology
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• v.24 no.6
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• pp.70-77
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• 2000

In this paper, the effect of solution and age heat treatment to the corrosion behavior for the Ti-6Al-4V alloy were studied by cyclic polarization methods. Ti-6Al-4V was solution heat treated at $1,066^{\circ}C$ and $966^{\circ}C$ for 5 hours, and followed by age heat treated at $650^{\circ}C$, $600^{\circ}C$ and $550^{\circ}C$ with 1, 2, 4, 8 and 16 hours under vacuum environment. Test solution was 3.5% NaCl with temperature $25^{\circ}C$. The obtained results were as follows: 1. Base metal was exhibited higher electrical charge than that of solution and aged material. With decrease of solution-treatment temperature from 1066 to $966^{\circ}C$, the electrical charge was increased due to softening of micro structure. 2. The corrosion resistance of specimen that solution treated at $966^{\circ}C$ for 5 hours and age heat treated at 650, 660 and $550^{\circ}C$ were increased with increase of aging time to 4, 8 and 16 hours respectively, and then decreased. 3. In case of 316L stainless steel, measured charge and corrosion potential was 0.0627 coulomb and -614 mV respectively. Corrosion resistance of Ti-6Al-4V was higher than that of 316L.

• Proceedings of the IEEK Conference
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• summer
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• pp.343-347
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• 2004

High oxidation temperature of SiC shows a tendency of carbide formation at the interface which results in poor MOSFET transfer characteristics. Thus we developed oxidation processes in order to get low interface charge densities. N-type 6H-SiC MOS capacitors were fabricated by different oxidation processes: dry, wet, and dry­reoxidation. Gate oxidation and Ar anneal temperature was $1150^{\circ}C.$ Ar annealing was performed after gate oxidation for 30 minutes. Dry-reoxidation condition was $950^{\circ}C,$ H2O ambient for 2 hours. Gate oxide thickness of dry, wet and dry-reoxidation samples were 38.0 nm, 38.7 nm, 38.5 nm, respectively. Mo was adopted for gate electrode. To investigate quality of these gate oxide films, high frequency C- V measurement, gate oxide leakage current, and interface trapped charge densities (Dit) were measured. The interface trapped charge densities (Dit) measured by conductance method was about $4\times10^{10}[cm^{-1}eV^{-1}]$ for dry and wet oxidation, the lowest ever reported, and $1\times10^{11}[cm^{-1}eV^{-1}]$ for dry-reoxidation

• Journal of the Korean Chemical Society
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• v.50 no.1
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• pp.7-13
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• 2006

infrared(IR) absorption spectra were calculated for the ethyl ester of p-tert-butylcalix[4]arene (1) in the cone conformer and its alkali-metal-ion complex. The vibrational spectra were obtained by restricted Hartree-Fock (RHF) calculations with the 6-31G basis set. The characteristic vibrational frequencies of various C-O and C=O stretching motions of the complexes show that the structure of 1+K+ complex is almost of C4v symmetry compared to 1+Na+ (C2v) analogue. The theoretical results for the host molecule 1 and complex (1+Na+) were compared with the experimental results, and the calculated vibrational frequencies agree well with the features of the experimental spectra.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.171-174
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• 2004

The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at $630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is $2.1{\mu}m$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of $AgGaSe_2$ single crystal thin films measured from Hall effect by van der Pauw method are $4.89{\times}10^{17}\;cm^{-3},\;129cm^2/V{\cdot}s$ at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $AgGaSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}S_o$ and the crystal field splitting ${\Delta}C_r$ were 0.1762 eV and 0.2494 eV at 10 K, respectively. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition $(E_X)$ observable only in high quality crystal and neutral bound exciton $(D^o,X)$ having very strong peak intensity And, the full width at half maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.345-345
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• 2011

MgO는 암염구조를 가진 전형적인 이온 결합성 화합물로서 7.8eV의 띠틈을 갖고 흡습성이 강하다. 면 방전 구조 PDP에서 MgO 보호막은 면 방전으로 인한 유전층의 식각을 보호하고 2차 전자 방출을 통해 방전 전압을 낮추는 역할을 한다. 하지만 MgO 보호막은 증착시 흡수된 수분이 제거되어야 하고, 방전 특성 개선 및 방전 효율 향상을 위해 가공 처리에 관한 연구가 진행 되어야 한다. 본 연구는 MgO 보호막의 전자적 특성의 변화를 알아보기 위해 $O_2$ 분위기에서 전자빔 증착법을 이용해 MgO Powder를 사용하여 시료를 제작하였다. 표면에 흡착된 수분제거로 인한 특성 변화를 알아보기 위해 진공 챔버내에서 시료를 $500^{\circ}C{\sim}550^{\circ}C$의 열처리를 실시한 후 XPS(X-ray Photoelectron Spectroscopy), REELS(Reflection Electron Energy Loss Spectroscopy), UPS(Ultraviolet photoelectron Spectroscopy)를 이용하여 전자적 특성을 연구하였다. XPS 측정결과 시료의 열처리를 통해 C1s spectrum의 O-C=O(289eV) binding energy가 없어져 박막에 흡착된 불순물이 제거 되었으며 O1s spectrum에서 Hydroxides가 감소하고 530.0eV의 MgO 결합에너지쪽으로 커짐으로써 박막의 구조를 확인할 수 있었다. 그리고 $O^2$ 분위기에서 성장시킨 MgO 박막 기판을 열처리 후 REELS를 이용해 띠틈을 얻어보면 Ep=500eV에서 띠틈이 6.77eV, Ep=1500eV에서 띠틈이 7.33eV로 각각 측정되었다. Ep=500eV의 REELS 스펙트럼으로부터 산소 결함에 의한 표면 F Center는 4.22eV로 확인되었다.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.33-36
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• 2002

MESFET was fabricated using 4H-SiC substrates and epitaxy The DC characteristics of 0.5 urn gate length, 400 urn gate width MESFET had $I_{dss}$=200 ㎃/mm, maximum transconductance of 12 ㎳/mm at Vrs=-4 V, V, Is=27 V. Thc device had an fT of 2.5 GHz and $f_{mdx}$ of 13.3 GHz at $V_{ds}$ =27 V and $V_{g}$=-4 V. The fabrication and characterization of this device are discussed.d.d.d.