• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.232-232
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• 2010

Recently light emitting diodes (LEDs) have been expected as the new generation light sources because of their advantages such as small size, long lifetime and energy-saving. GaN, as a wide band gap material, is widely used as a material of LEDs and GaN nanorods are the one of the most widely investigated nanostructure which has advantages for the light extraction of LEDs and increasing the active area by making the cylindrical core-shell structure. Lately GaN nanorods are fabricated by various techniques, such as selective area growth, vapor-liquid-solid (VLS) technique. But these techniques have some disadvantages. Selective area growth technique is too complicated and expensive to grow the rods. And in the case of VLS technique, GaN nanorods are not vertically aligned well and the metal catalyst may act as the impurity. So we just tried to grow the GaN nanorods on Si substrate without catalyst to get the vertically well aligned nanorods without impurity. First we deposited the AlN buffer layer on Si substrate which shows more vertical growth mode than sapphire substrate. After the buffer growth, we flew trimethylgallium (TMGa) as the III group source and ammonia as the V group source. And during the GaN growth, we kept the ammonia flow stable and periodically changed the flow rate of TMGa to change the growth mode of the nanorods. Finally, as the optimization, we changed the various growth conditions such as the growth temperature, the working pressure, V/III ratio and the doping level. And we are still in the process to reduce the diameter of the nanorods and to extend the length of the nanorods simultaneously. In this study, we focused on the shape changing of GaN nanorods with different growth conditions. So we confirmed the shape of the nanorods by scanning electron microscope (SEM) and carried out the Photoluminescence (PL) measurement and x-ray diffraction (XRD) to examine the crystal quality difference between samples. Detailed results will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.151-155
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• 2002

This paper presents a micro fluxgate magnetic sensor in printed circuit board (PCB). The fluxgate sensor consists of five PCB stack layers including one layer magnetic core and four layers of excitation and pick-up coils. The center layer as a magnetic core is made of a micro patterned amorphous magnetic ribbon with extremely high DC permeability of ∼100,000 and the core has a rectangular-ring shape. The amorphous magnetic core is easily saturated due to the low coercive field and closed magnetic path for the excitation field. Four outer layers as an excitation and pick-up coils have a planar solenoid structure. The chip size of the fabricated sensing element is 7.3${\times}$5.7m㎡. Excellent linear response over the range of -100${\mu}$T to +100${\mu}$T is obtained with 540V/T sensitivity at excitation square wave of 3V$\_$P-P/ and 360kHz. The very low power consumption of ∼8mW was measured. This magnetic sensing element which measures the lower fields than 50${\mu}$T, is very useful for various applications such as: portable navigation systems, military research, medical research, and space research.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.8
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• pp.702-707
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• 2002

This paper presents a micro fluxgate sensor in printed circuit board (PCB). The fluxgate sensor consists of five PCB stack layers including one layer magnetic core and four layers of excitation and pick-up coils. The center layer as a magnetic core is made of a micro patterned amorphous magnetic ribbon and the core has a rectangular-ring shape. The amorphous magnetic core is easily saturated due to the low coercive field and closed magnetic path for the excitation field. Four outer layers as an excitation and pick-up coils have a planar solenoid structure. The chip size of the fabricated sensing element is 7.3$\times$5.7$\textrm{mm}^2$. Excellent linear response over the range of -100$\mu$T to +100$\mu$T is obtained with 540V/T sensitivity at excitation square wave of 3 $V_{p-p}$ and 360kHz. The very low power consumption of ~8mW was measured. This magnetic sensing element, which measures the lower fields than 50$\mu$T, is very useful for various applications such as: portable navigation systems, military research, medical research, and space research.h.

• Journal of Drive and Control
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• v.13 no.3
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• pp.15-23
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• 2016

The direct-drive servo valve(DDV) is a kind of one-stage valve because the main spool valve is directly driven by the dc motor. Since the DDV structure is simple, it is less expensive, more reliable, and offers a reduced internal leakage and a reduced sensitivity to fluid contamination. The control system of the DDV is highly nonlinear due to a current limiter, a voltage limiter, and the flow-force effect on the spool motion. The shape of the step response of the DDV-control system varies considerably according to the magnitudes of the step input and the load pressure. The system-design requirements mean that the overshoots should be less than 20%, and the errors at 0.02s should be less than 2%, regardless of the reference-step input sizes of 1V and 5V and the load-pressure magnitudes of 0MPa and 20.7MPa. To satisfy the system-design requirements, the PID-controller parameters of $K_c$, $T_i$ and $T_d$, and the derivative-feedback gain of $K_{der}$ are designed using the root locus and manual tuning.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.30 no.12 s.255
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• pp.1173-1180
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• 2006

This study deals with fluid flow and heat transfer around a module cooled by forced air flow generated by a piezoelectric(PZT) fan in an enclosure. The fluid flows were generated by a flexible PZT fan which deflects inside a fluid transport system of comparatively simple structure mounted on a PCB in an enclosure($270\times260\times90mm^3$). Input voltages of 30V and 40V, and a resonance frequency of 28Hz were used to vibrate the cooling fan. Input power to the module was 4W. The height in an enclosure was changed 23$\sim$43mm. The fluid flow around the module was visualized by using PIV system. The temperature distributions around a heated module were visualized by using liquid crystal film. As the height in an enclosure and the input voltage of PZT fan increased, the cooling effect of module using a PZT fan increased. We found that the flow type was T- or Y-shape and the cooling effect was increased by the wake generated by a PZT fan.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.2
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• pp.120-124
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• 2003

This paper describes a MEMS-based micro-fluxgate magnetic sensing element using Ni$\_$0.8/Fe$\_$0.2/ film formed by electroplating. The micro-fluxgate magnetic sensor composed of a thin film magnetic core and micro-structure solenoids for the pick-up and the excitation coils, is developed by using MEMS technologies in order to take advantage of low-cost, small size and lower power consumption in the fabrication. A copper with 20${\mu}$m width and 3${\mu}$m thickness is electroplated on Cr (300${\AA}$) / Au (1500${\AA}$) films for the pick-up (42turn) and the excitation (24turn) coils. In order to improve the sensitivity of the sensing element, we designed the magnetic core into a rectangular-ring shape to reduce the magnetic flux leakage. An electroplated permalloy film with the thickness of 3${\mu}$m is obtained under 2000 gauss to induce magnetic anisotropy. The magnetic core has the high DC effective permeability of ~1,100 and coercive field of ~0.1 Oe. The fabricated sensing element using rectangular-ring shaped magnetic film has the sensitivity of about 150 V/T at the excitation frequency of 2 MHz and the excitation voltage of 4.4 V$\_$p p/. The power consumption is estimated to be 50mW.

• Korean Journal of Materials Research
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• v.18 no.10
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• pp.535-541
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• 2008

Growth behavior of InGaN/GaN self-assembled quantum dots (QDs) was investigated with respect to different growth parameters in low pressure metalorganic chemical vapor deposition. Locally formed examples of three dimensional InGaN islands were confirmed from the surface observation image with increasing indium source ratio and growth time. The InGaN/GaN QDs were formed in Stranski-Krastanow (SK) growth mode by the continuous supply of metalorganic (MO) sources, whereas they were formed in the Volmer-Weber (V-W) growth mode by the periodic interruption of the MO sources. High density InGaN QDs with $1{\sim}2nm$ height and $40{\sim}50nm$ diameter were formed by the S-K growth mode. Dome shape InGaN dots with $200{\sim}400nm$ diameter were formed by the V-W growth mode. InN content in InGaN QDs was estimated to be reduced with the increase of growth temperature. A strong peak between 420-460 nm (2.96-2.70 eV) was observed for the InGaN QDs grown by S-K growth mode in photoluminescence spectrum together with the GaN buffer layer peak at 362.2 nm (3.41 eV).

• Journal of Advanced Research in Ocean Engineering
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• v.1 no.2
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• pp.106-114
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• 2015

In the fabrication of offshore oil and gas facilities, the significance of dimension control is growing continuously. But, it is difficult to determine the deformation of the structure during fabrication by simple lab tests due to the large size and the complicated shape. Strain-boundary method (a kind of shrinkage method) based on the shell element was proposed to predict the welding distortion of a structure effectively. Modeling of weld geometry in shell element is still a difficult task. In this paper, a concept of imaginary temperature pair is introduced to handle the effect of geometric factors such as groove shape, plate thickness and pass number, etc. Single pass imaginary temperature pair formula is derived from the relation between the groove area and the FE mesh size. By considering the contribution of each weld layer to the whole weldment, multi-pass imaginary temperature is also derived. Since the temperature difference represents the distortion increment, cumulative distortion curve can be drawn by integrating the temperature difference. This curve will be a useful solution when engineers meet some problems occurred in the shipyard. A typical example is shown about utilization of this curve. Several verifications are conducted to examine the validity of the proposed methodology. The applicability of the model is also demonstrated by applying it to the fabrication process of the heavy ship block. It is expected that the imaginary temperature model can effectively solve the modeling problem in shell element. It is also expected that the cumulative distortion curve derived from the imaginary temperature can offer useful qualitative information about angular distortion without FE analysis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.3
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• pp.172-177
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• 2014

Industrial, medical, environment and agriculture application of pulse power technology have been developing rapidly in many field. In order to make use in the form of pulses is applied to the pulse forming technique. At this time, spark gap is generally used for the pulse forming. Spark gap may be possible to simulate the shape of the electrode, to know the uniform or non-uniform electric field of the electrode structure. Further, it can be determined using Paschen's law applied pressure of the insulating gas in accordance with the voltage which is created using the value of the electric field. In this paper, we tried to found using a formula and the simulation process to determine the pressure. The value of the electric field is different according to the shape of the electrode. So, the range of pressure applied also varies. In order to withstand the 100 kV with a gap of 5 mm, the nitrogen gas must be applied to about 7 bar in the electrode structure. On the other hand, in the same conditions, Sulfur hexafluoride gas must be applied to about 2 bar. Consequently, the Sulfur hexafluoride gas has a higher insulation properties than nitrogen gas may be applied to low pressure at the same conditions.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2004.03a
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• pp.262-270
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• 2004

Basic experiments were carried out using the THT-IV low-power Hall thruster to examine the influences of magnetic field shape and strength, and acceleration channel length on thruster performance and to establish guidelines for design of high-performance Hall thrusters. Thrusts were measured with varying magnetic field and channel structure. Exhaust plasma diagnostic measurement was also made to evaluate plume divergent angles and voltage utilization efficiencies. Ion current spatial profiles were measured with a Faraday cup, and ion energy distribution functions were estimated from data with a retarding potential analyzer. The thruster was stably operated with a highest performance under an optimum acceleration channel length of 20 mm and an optimum magnetic field with a maximum strength of about 150 Gauss near the channel exit and with some shape considering ion acceleration directions. Accordingly, an optimum magnetic field and channel structure is considered to exist under an operational condition, related to inner physical phenomena of plasma production, ion acceleration and exhaust plasma feature. A new Hall thruster was designed with basic research data of the THT-IV thruster. With the thruster with many considerations, long stable operations were achieved. In all experiments at 200-400 V with 1.5-3 mg/s, the thrust and the specific impulse ranged from 15 to 70 mN and from 1100 to 2300 see, respectively, in a low electric power range of 300~1300 W. The thrust efficiency reached 55 %. Hence, a large map of the thruster performance was successfully made. The thermal characteristics were also examined with data of both measured and calculated temperatures in the thruster body. Thermally safe conditions were achieved with all input powers.