• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.63 no.3
• /
• pp.409-413
• /
• 2014

GIS partial discharge that occurred in the UHF band signal is effectively detected by the method to IEC60270 5pc the apparent minimum discharge can be detected over the GIS arrangement of the sensor interior and exterior of the UHF in accordance with the optimized position signal by considering the damping ratio is selected so that the signals can be obtained to be mounted. 362kV, 800kV GIS is installed on the internal and external sensors are UHF band signal attenuation is set by measuring the reference value, but the operation, 170kV case 362kV, 800kV on the basis of the measurement data and to be installed and operated. When 170kV per 1Bay by installing the built-in sensor 1 for detecting a partial discharge signal, But, GIS signal attenuation is large in the case of an internal partial discharge signal is not detected in some cases. Where the attenuation is great UHF signal of the sensor by increasing the quantity of partial discharge signals were acquired to allow relocation. The greater the spacing between the sensor and the sensor is applied simplifies the installation and reduces the cost in terms of maintenance of appropriate optimal position is calculated to detect the partial discharge signal is needed. Thus 170kV GIS signal power attenuation of a partial discharge by measuring the UHF sensor, and by relocating the proper position is calculated in accordance with the sensor signal decay rate and minimize the error of omission in detecting a partial discharge signal was optimized.

• Tunnel and Underground Space
• /
• v.16 no.6 s.65
• /
• pp.486-494
• /
• 2006

The horizontal to vertical (H/V) ratio technique in spectral domain is a common useful technique to estimate empirical site transfer function. The technique, originally proposed by Nakamura, is proposed to analyse the surface waves in the micrortremor records. The purpose of this paper is to estimate spectral ratio using observed data at the seismic stations distributed within Southern Korean Peninsula from the Fukuoka earthquake including 11 aftershocks. The results show that most of the stations have fairly good amplification characteristics in low frequency band. However, some of the seismic stations show one (resonant frequency specific to the site) or several local peaks of amplification factors with narrow high frequency band. Even though the site amplification characteristics are important information, we should be careful to analyse the observed ground motions from the seismic stations which have several very high amplification peaks for the deconvolution of seismic source and attenuation parameters.

• Journal of IKEEE
• /
• v.22 no.2
• /
• pp.427-431
• /
• 2018

This research was worked about $Ga_2O_3$ Epi wafer that was one of the mose wide band gap semiconductors to be used power semiconductor industry. This wafer was grown $5.3{\mu}m$ thickness on Sn doped $Ga_2O_3$ Substrate by HVPE(Hydride Vapor Phase Epitaxy). Generally, we can fabricate 600V class power semiconductor devices when the thickness of compoound power semiconductor is $5{\mu}m$. but in case of $Ga_2O_3$ Epi wafer, we can obtain over 1000V class. As a result of J-V measurment of the grown $Ga_2O_3$ Epi wafer, we obtain $2.9-7.7m{\Omega}{\cdot}cm^2$ on resistance. Specially, in case of reverse, we comfirmed a little leakage current when the reverse voltage is over 200V.

• Journal of the Institute of Electronics Engineers of Korea TE
• /
• v.39 no.4
• /
• pp.409-412
• /
• 2002

The LNA(Low Noise Amplifier) is designed for use in low cost commercial application covered fully IMT-2000 band(1920~2170MHz, BW=250MHz). It is optimized source inductance for source lead and designed to equivalent etched line. The LNA uses a high pass impedance matching network for noise match and simple structure. The bias circuit designs have been made self-biased with a negative voltage applied to gate. The power supply voltage is 8V, total current is 180mA. The LNA is biased at a Vgs of -0.4, Vds of 4V for first stage and Vds of 5V for second stage. The LNA is designed competitively for commercial product specification. The measured gain and noise figure of the completed amplifier was 20dB and 1dB, respectively. Also, input VSWR, P1dB and gain flatness was measured of 1.14 ~ l.3dB, 22.4dBm and $\pm$0.45dB, respectively. The designed LNA can be used for commercial product.

• Nuclear Engineering and Technology
• /
• v.52 no.11
• /
• pp.2585-2593
• /
• 2020

Swift heavy ion (SHI) beam irradiation can generate desirable defects in materials by transferring sufficient energy to the lattice that favours huge possibilities in tailoring of materials. The effect of Ag¹⁵⁺ ion irradiation with energy 200 MeV on spray deposited V₂O₅ thin films of thickness 253 nm is studied at various ion doses from 5 × 10¹¹ to 1 × 10¹³ ions/㎠. The XRD results of pristine film confirmed orthorhombic structure of V₂O₅ and its average crystallite size was found to be 20 nm. The peak at 394 cm^-1 in Raman spectra confirmed O-V-O bonding of V₂O₅, whereas 917 cm^-1 arise because of distortion in stoichiometry by a loss of oxygen atoms. Raman peaks vanished completely above the ion fluence of 5 × 10¹² ions/㎠. Optical studies by UV-Vis spectroscopy shows decrement in transmittance with an increase in ion fluence up to 5 × 10¹² ions/㎠. The red shift is observed both in the direct and indirect band gaps until 5 × 10¹² ions/㎠. The surface topography of the pristine film revealed sheath like structure with randomly distributed spherical nano-particles. The roughness of film decreased and the density of spherical nanoparticles increased upon irradiation. Irradiation improved the conductivity significantly for fluence 5 × 10¹¹ ions/㎠ due to band gap reduction and grain growth.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.20 no.10
• /
• pp.1107-1113
• /
• 2009

In this paper, the design and implementation of K-Band frequency dividers using 130 nm CMOS process are presented. A Miller frequency divider is presented, which realizes a division range from 20 to 25 GHz with 7.2 mW power consumption from 1.2 V supply. The layout size of the core circuit is about $315{\times}246\;um^2$. In addition, a CML frequency divider which divides the output signal of the Miller frequency divider is also presented, which realizes a division range from 8.5 to 13 GHz with 5.7 mW power consumption. The layout size of the CML core is about $91{\times}98\;um^2$. Cascading the Miller and CML frequency dividers, we confirmed the divide-by-4 operation for the input signal from 20 to 25 GHz.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.47 no.5
• /
• pp.100-105
• /
• 2010

A multi-band low noise amplifier (LNA) is designed in 90 nm RF CMOS process for 3GPP LTE (3rd Generation Partner Project Long Term Evolution) applications. The designed multi-band LNA covers the eight frequency bands between 1.85 and 2.8 GHz. A tunable input matching circuit is realized by adopting a switched capacitor array at the LNA input stage for providing optimum performances across the wide operating band. Current steering technique is adopted for the gain control in three steps. The performances of the LNA are verified through post-layout simulations (PLS). The LNA consumes 17 mA at 1.2 V supply voltage. It shows a power gain of 26 at the normal gain mode, and provides much lower gains of 0 and -6.7 in the bypass-I and -II modes, respectively. It achieves a noise figure of 1.78 dB and a IIP3 of -12.8 dBm over the entire band.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.45 no.10
• /
• pp.59-65
• /
• 2008

We have proposed a UHF/HF multi-band RFID reader, and have implemented it into a system in a package(SiP). The proposed SiP RFID reader has been designed to support both for EPCgloabal Class1 Generation2 protocol of UHF band, and 13.56MHz RFID protocols of ISO14443 A/B type, and ISO15693 standards. The operating mode is controlled by embedded RISC core, and the mode can be selected by users. The area of implemented SiP is $40mm{\times}40mm$ with 4 metal layers. The implemented reader SiP operates at single supply voltage of 3.3V. The maximum current consumption is 210mA. The operating distances are 5cm for 13.56MHz modes, and 20cm for UHF mode.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.13 no.6
• /
• pp.552-559
• /
• 2002

The EM(Engineering Model) LO(Local Oscillator) is designed for Ka-band satellite transponder. The VCO(Voltage Controlled Oscillator) is implemented using a high impedance inverter coupled with dielectric resonator to improve the phase noise performance out of the loop bandwidth. The phase of VCO is locked to that of a stable OCXO(Oven Controlled Crystal Oscillator) by using a SPD(Sampling Phase detector) to improve phase noise performance in the loop bandwidth. This LO exhibits the harmonic rejection characteristics above 43.83 dBc and requires 15 V and 160 mA. The phase noise characteristics are performed as -102.5 dBc/Hz at 10 KHz offset frequency and -104.0 dBc/Hz at 100 KHz offset frequency, respectively, with the output power of 13.50 dBm$\pm$0.33 dB over the temperature range of -20~+7$0^{\circ}C$.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.23 no.8
• /
• pp.959-965
• /
• 2019

In this paper, we design a low noise amplifier to support ka-band satellite communication systems using 65-nm RFCMOS process. The proposed low noise amplifier is designed with high-gain mode and low-gain mode, and is designed to control the gain according to the magnitude of the input signal. In order to reduce the power consumption, the supply voltage of the entire circuit is limited to 1 V or less. We proposed the gain control circuit that consists of the inverter structure. The 3D EM simulator is used to reduce the size of the circuit. The size of the designed amplifier including pad is $0.33mm^2$. The fabricated amplifier has a -7 dB gain control range in 3 dB bandwidth and the reflection coefficient is less than -6 dB in high gain mode and less than -15 dB in low gain mode.