• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.264-267
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• 2004

[ $Bi_{3.25}La_{0.75}Ti_3O_{12}$ ] (BLT) thin films were prepared by using metal organic decomposition method onto the $LaNiO_3$ (LNO) bottom electrode. Both the structure and morphology of the films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). Even at low temperatures ranging from 450 to $650^{\circ}C$, the BLT thinfilms were successfully deposited on LNO bottom electrode and exhibited (117) orientation. The BLT thin films annealed as low as $600^{\circ}C$ showed excellent ferroelectricity, higher remanent polarization and no significant degradation of switching charge at least up to $5{\times}10^9$ switching cycles at a frequency of 100 kHz and 5 V. For the annealing temperature of $600^{\circ}C$, the remanent polarization Pr and coercive field were $23.5\;C/cm^2$ and 120 kV/cm, respectively.

• The Korean Journal of Quaternary Research
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• v.7 no.1
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• pp.69-91
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• 1993

A total of 76 surface sediment samples, collected from the Korean west coast and the eastern Yellow Sea areas, were analyzed for their elemental composition in order to understand the geochemical characteristics of these deposits. The analyzed elements included 9 major elements (Al, Fe, Na, K, Mg, Ca, Ti, P, Mn), 8 minor elements (Sr, Ba, V, Cr, Co, Ni, Cu, Zn), organic carbon and calcium carbonate. Contents of most analyzed elements, excluding K and Ba, were generally low compared to those of average crust. Contents of most elements, except K and Ca, also correlated with sediment grain size, though the degree of relationship varied widely from one element to another. For fine-grained sediments, a distinction could be made between those in the central Yellow Sea and those in the Keum Estuary based on their characteristic elemental composition: the former were rich in Fe, Na, K, Mg, Ca and V, and the latter in Mn, Co and Ni. The element/aluminium ratios, on the other hand, showed that the central Yellow Sea muds were enriched in Fe, Mg, V, Ni, Cu and Zn and depleted in K, Mn, Ba and Sr relative to the mud located near the Korean Peninsula. Based on the analysis of these results, as well as of the influences of particular mineral phases or pollution effects, we could suggest geochemical criteria which can be used in distinguishing muds from the two different sources, the Keum River and the Yellow River: the former by the higher Mn content and the latter by the higher Mg and V contents, relative to each other.

• Journal of the Korean Society for Heat Treatment
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• v.23 no.1
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• pp.3-9
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• 2010

Titanium and its alloys were brazed in the range of $850-950^{\circ}C$ within 10 min. of brazing time using expensive infra red or other heating methods. However, brazing time needs to be extended to get temperature-uniformity for mass production by using continuous belt type furnace or high vacuum furnace with low heating rate. This study examined effects of holding temperature for 60 min, on microstructure and mechanical properties of titanium alloys. Mechanical properties of titanium alloys were drastically deteriorated with increasing holding temperature followed by grain growth. Maximum holding temperatures for CP (commercial pure) titanium and Ti-6Al-4V were confirmed as $800^{\circ}C$ and $850^{\circ}C$, respectively. Both titanium alloys were successfully brazed at $800^{\circ}C$ for 60 min. with the level of base metal strengths by using Zr based filler metal, $Zr_{54}Ti_{22}Ni_{16}Cu_8$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.275-276
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• 2015

기존의 상용화된 Ni-Cr tie-coating 물질은 내열성 시험 후 강도가 저하되고, Cr 성분이 patterning후에 완벽하게 제거 되지 않아서 누설 전류를 만드는 단점을 갖고 있다. 따라서 이 연구에서는 기존의 Ni-Cr 과 삼원계 Ni-Cr-X(X는 Nb, V, Mo, Ti) 물질의 패터닝성과 내열성을 비교하였다.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.75-78
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• 2004

$Bi_{3.25}Eu_{0.75}Ti_3O_{12}$ (BET) thin films were deposited on the $LaNiO_3$ (LNO (100))/Si and Pt/Ti/$SiO_2$/Si substrates by the metal-organic decomposition method. Structural and dielectric properties of BLT thin films for the applications in nonvolatile ferroelectric random access memories were investigated. Both the structure and morphology of the films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). Even at low temperatures $650^{\circ}C$, the BET thinfilms were successfully deposited on LNO bottom electrode and exhibited (001) and (117) orientation. Compared with the Pt electrode films, the BET thin films on the LNO electrode annealed at $650^{\circ}C$ showed better dielectric constantsand remanent polarization. The BET thin films on the LNO electrode for the annealing temperature of $650^{\circ}C$, the remanent polarization Pr and coercive field were $45.6\;C/cm^2$ and 171 kV/cm, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.1
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• pp.41-47
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• 2015

In this paper, the effective electron Schottky barrier height (${\Phi}_{Bn}$) of the Ni silicide/n-silicon (100) interface was studied in accordance with different thicknesses of the antimony (Sb) interlayer for high performance n-channel MOSFETs. The Sb interlayers, varying its thickness from 2 nm to 10 nm, were deposited by radio frequency (RF) sputtering on lightly doped n-type Si (100), followed by the in situ deposition of Ni/TiN (15/10 nm). It is found that the sample with a thicker Sb interlayer shows stronger ohmic characteristics than the control sample without the Sb interlayer. These results show that the effective ${\Phi}_{Bn}$ is considerably lowered by the influence of the Sb interlayer. However, the current level difference between Schottky diodes fabricated with Sb/Ni/TiN (8/15/10 nm) and Sb/Ni/TiN (10/15/10 nm) structures is almost same. Therefore, considering the process time and cost, it can be said that the optimal thickness of the Sb interlayer is 8 nm. The effective ${\Phi}_{Bn}$ of 0.076 eV was achieved for the Schottky diode with Sb/Ni/TiN (8/15/10 nm) structure. Therefore, this technology is suitable for high performance n-channel MOSFETs.

• Journal of the Korean Chemical Society
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• v.25 no.2
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• pp.61-66
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• 1981

A method for calculation of the contribution of $\pi$ bonding molecular orbitals to the dipole moments for octahedral [M(III)$A_3B_3$] type complexes has been developed [M(III) = Ti(III), V(III), Cr(III), Fe(III) or Co(III); A = O or N; B = N, S or Cl]. The contribution of ${\pi}$ bonding molecular orbitals to the dipole moments is found to be smaller than that of ${\sigma}$ bonding molecular orbitals but this contribution may not be negligible even for chelate complexes in which delocalization of ${\pi}$ electron is assumed. The calculated dipole moments (u = $u_{\sigma}$ + $u_{\pi}$) are closer to the experimental values than those for the case where only ${\sigma}$ bonds are assumed to be formed.

• Journal of Powder Materials
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• v.12 no.4 s.51
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• pp.266-272
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• 2005

Transition metal ions($Ni^{2+}$, $Cr^{3+}$ and $V^{5+}$) doped $TiO_2$ nanostructured powders were synthesized by mechanical alloying(MA) to shift the adsorption threshold into the visible light region. The synthesized powders were characterized by XRD, SEM, TEM and BET for structural analysis, UV-Vis and photoluminescence spectrum for the optical study. Also, photocatalytic abilities were evaluated by decomposition of 4-chlorophenol(4CP) under ultraviolet and visible light irradiations. Optical studies showed that the absorption wavelength of transition metal ions doped $TiO_2$ powders moved to visible light range, which was believed to be induced by the energy level change due to the doping. Among the prepared $TiO_2$ powders, $NiO^{2+}$ doped $TiO_2$ powders, showed excellent photooxidative ability in 4CP decomposition.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.115-115
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• 1999

GaN는 직접천이형 wide band gap(3.4eV) 반도체로서 청색/자외선 발광소자 및 고출력 전자장비등에의 응용성 때문에 폭넓게 연구되고 있다. 이러한 넓은 분야의 응용을 위해서는 열 적으로 안정된 Ohmic contact을 반드시 실현되어야 한다. n-type GaN의 경우에는 GaN계면에서의 N vacancy가 n-type carrier로 작용하기 때문에 Ti, Al, 같은 금속을 접합하여 nitride를 형성함에 의해서 낮은 접촉저항을 갖는 Ohmic contact을 하기가 쉽다. 그러나 p-type의 경우에는 일 함수가 크고 n-type와 다르게 nitride가 형성되지 않는 금속이 Ohmic contact을 할 가능성이 많다. 시료는 HF(HF:H2O=1:1)에서 10분간 초음파 세척을 한 후 깨끗한 물에 충분히 헹구었다. 그런 후에 고순도 Ar 가스로 건조시켰다. Pd와 Ni은 열적 증착법(thermal evaporation)을 사용하여 p-GaN에 상온에서 증착하였다. 현 연구에서는 열처리에 의한 Pd의 clustering을 줄이기 위해서 wetting이 좋은 Ni을 Pd 증착 전과 후에 삽입하였으며, monchromatic XPS(x-ray photoelectron spectroscopy) 와 SAM(scanning Auger microscopy)을 사용하여 열처리 전과 40$0^{\circ}C$, 52$0^{\circ}C$ 그리고 695$0^{\circ}C$에서 3분간 열처리 후의 온도에 따른 morphology 변화, 계면반응(interfacial reaction) 및 벤드 휨(band bending)을 비교 연구하였다. Nls core level peak를 사용한 band bending에서 Schottky barrier height는 Pd/Ni bi-layer 접합시 2.1eV를, Ni/Pd bi-layer의 경우에 2.01eV를 얻었으며, 이는 Pd와 Ni의 이상적인 Schottky barrier height 값 2.38eV, 2.35eV와 비교해 볼 때 매우 유사한 값임을 알 수 있다. 시료를 후열처리함에 의해 52$0^{\circ}C$까지는 barrier height는 큰 변화가 없으나, $650^{\circ}C$에서 3분 열처리 후에 0.36eV, 0.28eV 만큼 band가 더 ？을 알 수 있었다. Pd/Ni 및 Ni/Pd 접합시 $650^{\circ}C$까지 후 열 처리 과정에서 계면에서 matallic Ga은 온도에 비례하여 많은 양이 형성되어 표면으로 편석(segregation)되어지나, In-situ SAM을 이용한 depth profile을 통해서 Ni/Pd, Pd/Ni는 증착시 uniform하게 성장함을 알 수 있었으며, 후열처리 함에 의해서 점차적으로 morphology 의 변화가 일어나기 시작함을 볼 수 있었다. 이는 $650^{\circ}C$에서 열처리 한후의 ex-situ AFM을 통해서 재확인 할 수 있었다. 이상의 결과로부터 GaN에 Pd를 접합 시 심한 clustering이 형성되어 Ohoic contact에 문제가 있으나 Pd/Ni 혹은 Ni/Pd bi-layer를 사용함에 의해서 clustering의 크기를 줄일 수 있었다. Clustering의 크기는 Ni/Pd bi-layer의 경우가 작았으며, $650^{\circ}C$ 열처리 후에 barrier height는 Pd/Ni bi-layer의 경우에도 Ni의 영향을 받음을 알 수 있었다.

• Journal of Hydrogen and New Energy
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• v.7 no.2
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• pp.137-145
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• 1996

The Zr-based $AB_2$ type Laves phase hydrogen storage alloys have some promising properties, long cycle life, high discharge capacity, as electrode materials in reversible metal hydride batteries. However, when these alloys are used as negative electrode for battery, there is a problem that their rate capabilities are worse than those of commercialized $AB_5$ type hydrogen storage alloys. In this work, we tried to develop the Zr-based $AB_2$ type Laves phase hydrogen storage alloys which have high capacity and, especially, high rate capability.